Patent application number | Description | Published |
20120208310 | NON-HALOGENATED ETCHANT AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE NON-HALOGENATED ETCHANT - Exemplary embodiments of the present invention disclose a non-halogenated etchant for etching an indium oxide layer and a method of manufacturing a display substrate using the non-halogenated etchant, the non-halogenated etchant including nitric acid, sulfuric acid, a corrosion inhibitor including ammonium, a cyclic amine-based compound, and water. | 08-16-2012 |
20120252148 | ECHTANT AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water. | 10-04-2012 |
20120318769 | METHOD OF FORMING A METAL PATTERN AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE INCLUDING THE METAL PATTERN - A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 Å and about 5,500 Å on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved. | 12-20-2012 |
20120322187 | ETCHANTS AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME - An etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof. | 12-20-2012 |
20130017637 | METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING DISPLAY DEVICE BY USING THE SAMEAANM JEON; Woo-SeokAACI SeoulAACO KRAAGP JEON; Woo-Seok Seoul KRAANM LEE; Jong KwangAACI DaejeonAACO KRAAGP LEE; Jong Kwang Daejeon KRAANM JU; Jin HoAACI SeoulAACO KRAAGP JU; Jin Ho Seoul KRAANM KANG; MinAACI SeoulAACO KRAAGP KANG; Min Seoul KRAANM KANG; HoonAACI Suwon-siAACO KRAAGP KANG; Hoon Suwon-si KRAANM SHIM; Seung BoAACI Asan-siAACO KRAAGP SHIM; Seung Bo Asan-si KRAANM PARK; Gwui-HyunAACI Osan-siAACO KRAAGP PARK; Gwui-Hyun Osan-si KRAANM KIM; Bong-YeonAACI SeoulAACO KRAAGP KIM; Bong-Yeon Seoul KR - A method for forming a fine exposure pattern where a width and an interval of the pattern are each 1CD, by first exposing a photoresist by using an exposure mask where an interval ratio of a light shielding part and a light transmission part is 2CD:1CD to 4CD:1CD, and then second exposing the photoresist after the exposure mask is shifted at a predetermined interval, or second exposing the photoresist by using an exposure mask formed at a position where a light transmission part is shifted at a predetermined interval, and developing the photoresist, such that it is possible to form a display device having a pixel electrode including a plurality of fine branch electrodes having a smaller width and interval than a resolution of an exposure apparatus. | 01-17-2013 |
20130034923 | ETCHING COMPOSITION, METHOD OF FORMING A METAL PATTERN USING THE ETCHING COMPOSITION, AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate. | 02-07-2013 |
20130180947 | ETCHING COMPOSITION AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME - An etching composition that includes, based on the total weight of the etching composition, from about 0.05% to about 15% by weight of a halogen-containing compound, from about 0.1% to about 20% by weight of a nitrate compound, from about 0.1% to about 10% by weight of an acetate compound, from about 0.1% to about 10% by weight of a cyclic amine compound, from about 0% to about 50% by weight of a polyhydric alcohol, and a remainder of water. | 07-18-2013 |
20140011352 | METAL WIRE ETCHANT AND METHOD OF FORMING METAL WIRE USING THE SAME - A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same. | 01-09-2014 |
20140024206 | ETCHANT COMPOSITION AND METHOD OF FORMING METAL WIRE AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device. | 01-23-2014 |
20140204300 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer. | 07-24-2014 |
20150049282 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected with the thin film transistor; and a roof layer disposed to face the pixel electrode, wherein a plurality of microcavities having respective liquid crystal injection holes are formed between the pixel electrode and the roof layer, and the microcavities are filled with electrically orientatable liquid crystal molecules, wherein a light blocking layer disposed adjacent to the injection holes is formed and covering the thin film transistor, wherein the light blocking layer is covered by a passivation layer. | 02-19-2015 |