Patent application number | Description | Published |
20090159867 | Phase change memory with layered insulator - A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating layers and the pores may be filled with heaters, chalcogenide layers, and electrodes in some embodiments. The use of the two different insulator layers enables embodiments where thermal losses may be reduced and an amorphous region may be maintained along the entire length of the phase change material layer. | 06-25-2009 |
20090244962 | Immunity of phase change material to disturb in the amorphous phase - Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. | 10-01-2009 |
20090244963 | Programming multilevel cell phase change memories - A multilevel phase change memory cell may have a plurality of intermediate levels between a set and a reset or a crystalline and amorphous states. These intermediate levels between set and reset may be differentiated not only by programming current, but also by different programming pulse widths. As a result, the intermediate states may be positioned, on the programming current versus programming pulse width curve, in regions of common resistance with a relatively large range of programming current. | 10-01-2009 |
20090244964 | Reducing temporal changes in phase change memories - A phase change memory in the reset state may be heated to reduce or eliminate electrical drift. | 10-01-2009 |
20090250677 | Reducing drift in chalcogenide devices - Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with time. By providing a compensating material which exhibits an opposing tendency, the drift may be compensated. The compensating material may be mixed into a chalcogenide, may be layered with chalcogenide, may be provided with a heater, or may be provided as part of an electrode in some embodiments. Both chalcogenide and non-chalcogenide compensating materials may be used. | 10-08-2009 |
20090257275 | Seasoning phase change memories - A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory. | 10-15-2009 |
20100067290 | Method of programming of phase-change memory and associated devices and materials - A method of programming a phase-change memory (PCM) device to the high resistance reset state by means of pressure-induced amorphization. A train of few short pulses is applied to the PCM device produces high pressure on phase-change alloy (PCA). PCM device contains a PCA with easily deformed atomic structure by external pressure and materials mechanically contacted PCA. These materials have lower coefficients of thermal expansion and compressibility as well as higher coefficient of hardness than the corresponding coefficients of the PCA. | 03-18-2010 |
20100090189 | Nanoscale electrical device - A device consists a disordered relaxation insulator or/and a polyamorphous solid between two or more electrodes. Invented devices can perform passive, logic and memory functions in an electronic integrated circuit. | 04-15-2010 |
20100163817 | SELF-HEATING PHASE CHANGE MEMORY CELL ARCHITECTURE - A method for manufacturing a phase change memory includes forming a phase change memory cell by forming a phase change layer between two switching layers. The phase change layer is separated from thermal heat sinks, such as the bitline or wordline, by the switching layers. | 07-01-2010 |
20100226163 | Method of resistive memory programming and associated devices and materials - A pulse coupled with a microwave field is used for programming a resistive memory into one of non-volatile states. As the result, the programming becomes faster and more energy efficient. Related devices and materials are also described. | 09-09-2010 |
20100226168 | Programming methods for phase-change memory - Set pulses with finite rise time that heat up phase change alloy between about nucleation temperature and about average of crystallization and melting temperatures are proposed for programming phase change memory from reset to set state in order to minimize energy during this transition and to achieve uniform set state distribution. Non-square reset pulses with finite rise time that heat up phase change alloy at or above melting temperature are proposed for programming phase change memory from set to reset state in order to improve cell endurance. | 09-09-2010 |
20100283025 | Phase change devices - A phase change device includes a native oxide grown on the surface of a first phase change alloy layer. The native oxide is punched through during the first electrical pulse applied between the device electrodes. An aperture created in the native oxide limit a region of localized heating during the device programming. A method for the phase change device fabrication includes a native oxide formation. | 11-11-2010 |
20100284213 | Method of cross-point memory programming and related devices - A reverse recovery current of a diode is used for programming a cross-point memory. Programming of a crossbar memory device, comprising a diode with preferably short charge carriers lifetime and a storage element by keeping the device at one polarity for a period of time and then switching it from first polarity to second polarity (e.g., forward to reverse polarity of the diode). Programming occurs due to diode's reverse recovery current. The value and duration of the recovery current pulse are selected to program the storage element into one of plurality of electrically distinguish states by variation of the level of current flowing through the device in the first polarity of applied bias voltage, by variation of the speed for changing the bias voltage from first polarity to second polarity, and by steady state value of the second polarity voltage applied to the device in one or more embodiments. | 11-11-2010 |
20110069540 | Method of a phase-change memory programming - A method of programming a phase-change memory (PCM) device to the high resistance reset state by means of pressure-induced amorphization. A train of few short bipolar current pulses is applied to the PCM device in order to stress phase-change alloy (PCA) under high pressure, and current in each pulse is almost equal to set current. An atomic structure of phase-change alloy is easily deformable by external pressure due to weak chemical bonds. Some materials mechanically contacted PCA in PCM have lower coefficients of thermal expansion and compressibility as well as higher coefficient of hardness than the corresponding coefficients of the PCA. | 03-24-2011 |
20110079763 | Phase change devices - The present invention is a phase change device with a heater and a selector (e.g., diode) separated by a phase-change alloy. The present invention will find applicability in electronic memory devices. | 04-07-2011 |
20110168965 | Reducing Drift in Chalcogenide Devices - Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with time. By providing a compensating material which exhibits an opposing tendency, the drift may be compensated. The compensating material may be mixed into a chalcogenide, may be layered with chalcogenide, may be provided with a heater, or may be provided as part of an electrode in some embodiments. Both chalcogenide and non-chalcogenide compensating materials may be used. | 07-14-2011 |
20110210300 | Reducing Temporal Changes in Phase Change Memories - A phase change memory in the reset state may be heated to reduce or eliminate electrical drift. | 09-01-2011 |
20110240943 | Immunity of Phase Change Material to Disturb in the Amorphous Phase - Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. | 10-06-2011 |
20120262984 | Reducing Temporal Changes in Phase Change Memories - A phase change memory in the reset state may be heated to reduce or eliminate electrical drift. | 10-18-2012 |
20140098604 | Immunity of Phase Change Material to Disturb in the Amorphous Phase - Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. | 04-10-2014 |
20140328121 | Immunity of Phase Change Material to Disturb in the Amorphous Phase - Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. | 11-06-2014 |
20150055409 | Seasoning Phase Change Memories - A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory. | 02-26-2015 |