Patent application number | Description | Published |
20130033925 | Semiconductor Device - An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode are included. The first transistor is provided over a substrate including a semiconductor material and a second transistor includes an oxide semiconductor layer. | 02-07-2013 |
20130037799 | DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF - An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced. | 02-14-2013 |
20130043911 | Semiconductor Device and Electronic Device Including Semiconductor Device - It is an object to suppress deterioration in characteristics of a transistor in a driver circuit. A driver circuit includes a first transistor, a second transistor including a gate and one of a source and a drain to which a second signal is inputted, a third transistor whose gate is electrically connected to one of a source and a drain of the first transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off, and a fourth transistor whose gate is electrically connected to the other of the source and the drain of the second transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off. | 02-21-2013 |
20130045554 | DISPLAY DEVICE AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - To provide a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics. A base substrate having an insulating surface to which a single-crystal semiconductor layer is attached is divided into strips and is used for a driver circuit of a display device. Alternatively, a base substrate having an insulating surface to which a plurality of single-crystal semiconductor layers is attached is divided into strips and is used for a driver circuit of a display device. Accordingly, a driver circuit corresponding to a size of a display device can be used for the display device, and a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics can be provided. | 02-21-2013 |
20130045568 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive, layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer | 02-21-2013 |
20130049001 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties. | 02-28-2013 |
20130056763 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor. | 03-07-2013 |
20130057174 | LIGHT-EMITTING DEVICE AND DRIVING METHOD THEREOF - In a light emitting device, luminance irregularities caused by fluctuation in threshold of TFTs for supplying a current to EL elements among pixels hinder the light emitting device from improving the image quality. A voltage equal to the threshold of a TFT | 03-07-2013 |
20130057315 | Non-Volatile Latch Circuit And Logic Circuit, And Semiconductor Device Using The Same - A novel non-volatile latch circuit and a semiconductor device using the non-volatile latch circuit are provided. The latch circuit has a loop structure in which an output of a first element is electrically connected to an input of a second element and an output of the second element is electrically connected to an input of the first element through a second transistor. A transistor using an oxide semiconductor as a semiconductor material of a channel formation region is used as a switching element, and a capacitor is provided to be electrically connected to a source electrode or a drain electrode of the transistor, whereby data of the latch circuit can be retained, and a non-volatile latch circuit can thus be formed. | 03-07-2013 |
20130057345 | Analog Circuit and Display Device and Electronic Device - The invention provides an analog circuit that decreases an effect of variation of a transistor. By flowing a bias current in a compensation operation, a voltage between the gate and source of the transistor to be compensated is held in a capacitor. In a normal operation, the voltage stored in the compensation operation is added to a signal voltage. As the capacitor holds the voltage according to the characteristics of the transistor to be compensated, the effect of variation can be decreased by adding the voltage stored in the capacitor to the signal voltage. Further, an analog circuit which decreases the/effect of variation can be provided by applying the aforementioned basis to a differential circuit, an operational amplifier and the like. | 03-07-2013 |
20130057798 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS - The present invention provides a liquid crystal display device including a liquid crystal layer disposed between a first substrate and a second substrate, a pixel electrode in a reflection region and a transmission region over the first substrate, a film for adjusting a cell gap in the reflection region over the first substrate, and an opposite electrode in the reflection region and the transmission region over the second substrate. The pixel electrode in the reflection region is provided over the film and reflects light. The pixel electrode in the transmission region transmits light. The pixel electrode in the reflection region and the transmission region includes a slit. The slit is overlapped with at least a part of a step portion which is provided by the film between the reflection region and the transmission region. | 03-07-2013 |
20130069058 | DISPLAY DEVICE - With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced. | 03-21-2013 |
20130069059 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, an insulating layer over the transistor, and a conductive layer over the insulating layer. The insulating layer covers the oxide semiconductor layer and is in contact with the gate insulating layer. In a channel width direction of the oxide semiconductor layer, end portions of the gate insulating layer and the insulating layer are aligned with each other over the gate electrode layer, and the conductive layer covers a channel formation region of the oxide semiconductor layer and the end portions of the gate insulating layer and the insulating layer and is in contact with the gate electrode layer. | 03-21-2013 |
20130069060 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO | 03-21-2013 |
20130069693 | SENSE AMPLIFIER AND ELECTRONIC APPARATUS USING THE SAME - A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected. | 03-21-2013 |
20130069923 | DRIVER CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE - To suppress malfunctions in a shift register circuit. A shift register having a plurality of flip-flop circuits is provided. The flip-flop circuit includes a transistor | 03-21-2013 |
20130070000 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - It is an object of the present invention to provide a display device in which problems such as an increase of power consumption and increase of a load of when light is emitted are reduced by using a method for realizing pseudo impulsive driving by inserting an dark image, and a driving method thereof. A display device which displays a gray scale by dividing one frame period into a plurality of subframe periods, where one frame period is divided into at least a first subframe period and a second subframe period; and when luminance in the first subframe period to display the maximum gray scale is Lmax1 and luminance in the second subframe period to display the maximum gray scale is Lmax2, (½) Lmax203-21-2013 | |
20130070001 | DRIVING METHOD OF LIGHT EMITTING DEVICE - If a potential of a gate electrode of a driving transistor varies after a gray scale signal is inputted into each pixel, a current value of a current supplied to a light emitting element varies so that accurate gray scale display cannot be obtained. In particular, in the case of performing black display, current may flow, which makes clear black display difficult. Accordingly, the invention provides a light emitting device capable of performing accurate gray scale display, and a driving method thereof. According to the invention, a signal for display is inputted plural times within a predetermined timing period, or a writing operation period is lengthened. Consequently, the gate voltage of the transistor is determined after the anode potential of the light emitting element is stabilized, and therefore accurate gray scale display can be performed. | 03-21-2013 |
20130075709 | Light Emitting Device and Electronic Equipment - A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED. | 03-28-2013 |
20130075723 | Semiconductor Device, Display Device, And Electronic Appliance - In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced. | 03-28-2013 |
20130075738 | Display Device and Electronic Device Using the Same - A display device with a compensation circuit that applies a fixed potential constantly to a gate electrode of a driving transistor for a certain period is provided. Specifically, each difference voltage value between an anode and a cathode of the light emitting element is utilized in the case where the light emitting element emits light and emits no light. In a case where the light emitting element emits light, a potential of the gate electrode of the driving transistor is to be held; and in a case where the light emitting element emits no light, a potential that certainly turns off the gate electrode of the driving transistor is kept on applying to the gate electrode of the driving transistor. | 03-28-2013 |
20130076232 | LIGHT EMITTING DEVICE - It is an object of the invention to provide a light emitting device in which burden on a light emitting element having low luminous efficiency is relieved, and the deterioration of a light emitting element, the reduction in color reproduction due to the deteriorated light emitting element, and increase in electric power consumption can be suppressed. A light emitting device according to the invention has light emitting elements each of which emits one of colors corresponding to three primary colors. Further, one feature of the light emitting device according to the invention has a light emitting element which emits a neutral color. The light emitting device according to the invention has a structure in which a plurality of pixels having light emitting elements each of which emits one of colors corresponding to three primary colors, and a light emitting element which emits a neutral color as one group, are arranged. | 03-28-2013 |
20130076775 | DISPLAY DEVICE, AND METHOD OF OPERATION THEREOF - It is an object of the invention to provide a display device which performs high grayscale display in accordance with display contents and a game machine with an improved realistic sensation. The invention is a display device characterized by including a pixel portion which performs display based on a video signal and a driver circuit portion inputted with the video signal, wherein the driver circuit portion has a unit for controlling a grayscale in accordance with display of the pixel portion. In a liquid crystal display device, luminance of a lighting unit is controlled based on a signal from the unit for controlling a grayscale whereas a current supplied to a light emitting element is controlled in a light emitting device. By applying such a display device to a game machine, a realistic sensation can be improved. | 03-28-2013 |
20130077011 | LIQUID CRYSTAL DISPLAY DEVICE - A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions. | 03-28-2013 |
20130077735 | SHIFT REGISTER CIRCUIT - A shift register circuit including a logic circuit capable of controlling the threshold voltage of a transistor and outputting a signal corresponding to an input signal by changing only the potential of a back gate without changing the potential of a gate is provided. In a shift register circuit including a logic circuit with a first transistor and a second transistor having the same conductivity type, a first gate electrode of the first transistor is connected to a source electrode or a drain electrode of the first transistor, an input signal is supplied to a second gate electrode of the first transistor, a clock signal is supplied to a gate electrode of the second transistor, and the first gate electrode and the gate electrode are formed from the same layer. | 03-28-2013 |
20130078762 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized. | 03-28-2013 |
20130082253 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate electrode layer is reduced and degradation of switching characteristics is suppressed, so that the reliability is improved. The cross-sectional shape of an insulating layer which overlaps over a channel formation region is a tapered shape. The thickness of the insulating layer which overlaps over the channel formation region is 0.3 μm or less, preferably 5 nm or more and 0.1 μm or less. The taper angle 0 of a lower end portion of the cross-sectional shape of the insulating layer which overlaps over the channel formation region is 60° or smaller, preferably 45° or smaller, further preferably 30° or smaller. | 04-04-2013 |
20130082254 | SEMICONDUCTOR DEVICE - A highly reliable structure is provided when high-speed driving of a semiconductor device is achieved by improving on-state characteristics of the transistor. The on-state characteristics of the transistor are improved as follows: an end portion of a source electrode and an end portion of a drain electrode overlap with end portions of a gate electrode, and the gate electrode surely overlaps with a region serving as a channel formation region of an oxide semiconductor layer. Further, embedded conductive layers are formed in an insulating layer so that large contact areas are obtained between the embedded conductive layers and the source and drain electrodes; thus, the contact resistance of the transistor can be reduced. Prevention of coverage failure with a gate insulating layer enables the oxide semiconductor layer to be thin; thus, the transistor is miniaturized. | 04-04-2013 |
20130082255 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized. | 04-04-2013 |
20130082266 | Display Device And Driving Method Thereof - A display device in which not only a variation in a current value due to a threshold voltage but also a variation in a current value due to mobility are prevented from influencing luminance with respect to all the levels of grayscale to be displayed. After applying an initial potential for correction to a gate and a drain of a driving transistor, the gate and the drain of the driving transistor is kept connected in a floating state, and a voltage is held in a capacitor before a voltage between the gate and a source of the driving transistor becomes equal to a threshold voltage. When a voltage obtained by subtracting the voltage held in the capacitor from a voltage of a video signal is applied to the gate and the source of the driving transistor, a current is supplied to a light-emitting element. A value of an initial voltage for correction differs in accordance with the voltage of the video signal. | 04-04-2013 |
20130083463 | ELECTRONIC DEVICES - An electronic device capable of transmitting and receiving a mail through an internet usually has from 12 to 20 operation keys inclusive of numerical keys and special keys. In order to input Japanese characters inclusive of “kanji” and special characters as data, complex operations must be executed by changing over the input mode. A portable data terminal as represented by a cellular phone or an electronic device such as a data terminal as represented by a personal computer or a desk top telephone, has such a shape that the first center-line of the first housing and the second center line of the second housing come into agreement and in parallel with each other only in a state where the first housing and the second housing are folded by the hinge. | 04-04-2013 |
20130084384 | MANUFACTURING METHOD OF SECONDARY PARTICLES AND MANUFACTURING METHOD OF ELECTRODE OF POWER STORAGE DEVICE - The conductivity of an active material layer provided in an electrode of a secondary battery is sufficiently increased and active material powders in a slurry containing active materials each have a certain size. Secondary particles are manufactured through the following steps: mixing at least active material powders and oxidized conductive material powders to form a slurry; drying the slurry to form a dried substance; grinding the dried substance to form a powder mixture; and reducing the powder mixture. Further, an electrode of a power storage device is manufactured through the following steps: forming a slurry containing at least the secondary particles; applying the slurry to a current collector; and drying the slurry over the current collector. | 04-04-2013 |
20130084495 | POWER STORAGE DEVICE - Provided is a power storage device in which charge/discharge capacity is high, charge/discharge can be performed at high speed, and deterioration in battery characteristics due to charge/discharge is small. The power storage device includes a negative electrode including an active material including a plurality of prism-like protrusions. A cross section of each of the plurality of prism-like protrusions, which is perpendicular to the axis of each protrusion, is a polygonal shape or a polygonal shape including a curve, such as a cross shape, an H shape, an L shape, an I shape, a T shape, a U shape, or a Z shape. The active material including the plurality of prism-like protrusions may be covered with graphene. | 04-04-2013 |
20130084665 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide an input device including a display screen which has an image display function and a text information input function by using a display portion in which a pixel includes an optical sensor. An optical sensor is provided in each pixel of the display portion in order to detect position information. A transistor of a pixel circuit in the display portion and the optical sensor are formed using a single crystal semiconductor layer. By using the single crystal semiconductor layer, there is no variation in characteristics among pixels, and position detection with high accuracy is realized. Moreover, the display portion is formed using a substrate which is a light-transmitting substrate such as a glass substrate provided with a single crystal semiconductor layer separated from a single crystal semiconductor substrate. | 04-04-2013 |
20130084691 | BEAM HOMOGENIZER, LASER IRRADIATION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide. | 04-04-2013 |
20130087775 | Light Emitting Device - The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced. | 04-11-2013 |
20130087782 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - An object is to suppress occurrence of oxygen deficiency. An oxide semiconductor film is formed using germanium (Ge) instead of part of or all of gallium (Ga) or tin (Sn). At least one of bonds between a germanium (Ge) atom and oxygen (O) atoms has a bond energy higher than at least one of bonds between a tin (Sn) atom and oxygen (O) atoms or a gallium (Ga) atom and oxygen (O) atoms. Thus, a crystal of an oxide semiconductor formed using germanium (Ge) has a low possibility of occurrence of oxygen deficiency. Accordingly, an oxide semiconductor film is formed using germanium (Ge) in order to suppress occurrence of oxygen deficiency. | 04-11-2013 |
20130087785 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed. | 04-11-2013 |
20130087789 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced. | 04-11-2013 |
20130087790 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A miniaturized transistor having favorable electric characteristics is provided. The transistor includes an oxide semiconductor layer which is in contact with a source electrode layer on one of side surfaces in a channel length direction and in contact with a drain electrode layer on the other of the side surfaces in the channel length direction. With this structure, an electric field between the source electrode layer and the drain electrode layer is relaxed and a short-channel effect is suppressed. Further, a sidewall layer having conductivity is provided on a side surface of a gate electrode layer in the channel length direction, so that the sidewall layer having conductivity overlaps with the source electrode layer or the drain electrode layer with a gate insulating layer provided therebetween, which enables the transistor to substantially have an L | 04-11-2013 |
20130089950 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed. | 04-11-2013 |
20130092924 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A miniaturized transistor having excellent electrical characteristics is provided with high yield. Further, a semiconductor device including the transistor and having high performance and high reliability is manufactured with high productivity. In a semiconductor device including a transistor in which an oxide semiconductor film including a channel formation region and low-resistance regions between which the channel formation region is sandwiched, a gate insulating film, and a gate electrode layer whose top surface and side surface are covered with an insulating film including an aluminum oxide film are stacked, a source electrode layer and a drain electrode layer are in contact with part of the oxide semiconductor film and the top surface and a side surface of the insulating film including an aluminum oxide film. | 04-18-2013 |
20130092925 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A miniaturized transistor is provided with high yield. Further, a semiconductor device which has high on-state characteristics and which is capable of high-speed response and high-speed operation is provided. In the semiconductor device, an oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are stacked in this order. A source electrode layer and a drain electrode layer are formed in a self-aligned manner by cutting the conductive film so that the conductive film over the gate electrode layer and the conductive layer is removed and the conductive film is divided. An electrode layer which is in contact with the oxide semiconductor layer and overlaps with a region in contact with the source electrode layer and the drain electrode layer is provided. | 04-18-2013 |
20130092926 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A transistor which includes an oxide semiconductor and can operate at high speed is provided. A highly reliable semiconductor device including the transistor is provided. An oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer formed in a groove of a base insulating layer. The channel formation region is embedded in a position overlapping with a gate electrode which has a side surface provided with a sidewall. The groove includes a deep region and a shallow region. The sidewall overlaps with the shallow region, and a connection portion between a wiring and the electrode layer overlaps with the deep region. | 04-18-2013 |
20130092928 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a miniaturized transistor having favorable electric characteristics. An oxide semiconductor layer is formed to cover a source electrode layer and a drain electrode layer, and then regions of the oxide semiconductor layer which overlap with the source electrode layer and the drain electrode layer are removed by polishing. Precise processing can be performed accurately because an etching step using a resist mask is not performed in the step of removing the regions of the oxide semiconductor layer overlapping with the source electrode layer and the drain electrode layer. Further, a sidewall layer having conductivity is provided on a side surface of a gate electrode layer in a channel length direction; thus, the sidewall layer having conductivity overlaps with the source electrode layer or the drain electrode layer with a gate insulating layer provided therebetween, and a transistor substantially including an L | 04-18-2013 |
20130092930 | SEMICONDUCTOR DEVICE - A semiconductor device that is less influenced by variations in characteristics between transistors or variations in a load, and is efficient even for normally-on transistors is provided. The semiconductor device includes at least a transistor, two wirings, three switches, and two capacitors. A first switch controls conduction between a first wiring and each of a first electrode of a first capacitor and a first electrode of a second capacitor. A second electrode of the first capacitor is connected to a gate of the transistor. A second switch controls conduction between the gate and a second wiring. A second electrode of the second capacitor is connected to one of a source and a drain of the transistor. A third switch controls conduction between the one of the source and the drain and each of the first electrode of the first capacitor and the first electrode of the second capacitor. | 04-18-2013 |
20130092934 | DISPLAY DEVICE - The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode. | 04-18-2013 |
20130092940 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a miniaturized transistor having high electric characteristics. A conductive film to be a source electrode layer and a drain electrode layer is formed to cover an oxide semiconductor layer and a channel protection layer, and then a region of the conductive film, which overlaps with the oxide semiconductor layer and the channel protection layer, is removed by chemical mechanical polishing treatment. Precise processing can be performed accurately because an etching step using a resist mask is not performed in the step of removing part of the conductive film to be the source electrode layer and the drain electrode layer. With the channel protection layer, damage to the oxide semiconductor layer or a reduction in film thickness due to the chemical mechanical polishing treatment on the conductive film can be suppressed. | 04-18-2013 |
20130092943 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device which is miniaturized while favorable characteristics thereof are maintained is provided. In addition, the miniaturized semiconductor device is provided with a high yield. The semiconductor device has a structure including an oxide semiconductor film provided over a substrate having an insulating surface; a source electrode layer and a drain electrode layer which are provided in contact with side surfaces of the oxide semiconductor film and have a thickness larger than that of the oxide semiconductor film; a gate insulating film provided over the oxide semiconductor film, the source electrode layer, and the drain electrode layer; and a gate electrode layer provided in a depressed portion formed by a step between a top surface of the oxide semiconductor film and top surfaces of the source electrode layer and the drain electrode layer. | 04-18-2013 |
20130092944 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. Provided is a semiconductor device including the following: an oxide semiconductor film which serves as a semiconductor layer; a gate insulating film including an oxide containing silicon, over the oxide semiconductor film; a gate electrode which overlaps with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film overlapping with at least the gate electrode includes a region in which a concentration of silicon distributed from the interface with the gate insulating film toward the inside of the oxide semiconductor film is lower than or equal to 1.1 at. %. | 04-18-2013 |
20130092945 | SEMICONDUCTOR DEVICE - The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion. | 04-18-2013 |
20130092963 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A load, a transistor which controls a current value supplied to the load, a capacitor, a power supply line, and first to third switches are provided. After a threshold voltage of the transistor is held by the capacitor, a potential in accordance with a video signal is inputted and a voltage that is the sum of the threshold voltage and the potential is held. Accordingly, variation in current value caused by variation in threshold voltage of the transistor can be suppressed. Therefore, a desired current can be supplied to a load such as a light emitting element. In addition, a display device with a high duty ratio can be provided by changing a potential of the power supply line. | 04-18-2013 |
20130092990 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE AND ELECTRONIC DEVICE - When writing a signal current from a current source to a current source circuit, noise occurs in some cases in a wiring through which a current flows, which may cause a potential of the wiring to be outside the normal range. As the potential does not turn back within the normal range easily at this time, writing to the current source circuit is delayed. According to the invention, when the potential becomes outside the normal range due to noise occurring in a wiring through which a current flows when writing a signal current from a current source to a current source circuit, a current is supplied from other than the current source, thereby the potential of the wiring can turn back within the normal range rapidly. | 04-18-2013 |
20130093025 | PULSE OUTPUT CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE - An object of the present invention is to suppress deterioration in the thin film transistor. A plurality of pulse output circuits each include first to eleventh thin film transistors is formed. The pulse output circuit is operated on the basis of a plurality of clock signals which control each transistor, the previous stage signal input from a pulse output circuit in the previous stage, the next stage signal input from a pulse output circuit in the next stage, and a reset signal. In addition, a microcrystalline semiconductor is used for a semiconductor layer serving as a channel region of each transistor. Therefore, degradation of characteristics of the transistor can be suppressed. | 04-18-2013 |
20130093650 | Display Device - A signal line driving circuit which includes a digital signal sampling circuit, a storage circuit, a time setting circuit and a constant current circuit, is fabricated of TFTs on an insulating substrate which is made of the same substance as that of a pixel portion substrate. Thus, in a passive type EL display device, the problem of a distortion in the case of bonding the signal line driving circuit onto the pixel portion substrate can be eliminated. Besides, in an active type EL display device, each pixel is constructed of one transistor and an EL element. Thus, the aperture factor of the EL display device is enlarged. | 04-18-2013 |
20130093974 | Liquid Crystal Electro-Optic Device - In a horizontal electric field drive type liquid crystal electro-optic device, a gate electrode, a source electrode, a drain electrode, a semiconductor film and a common electrode are formed on a glass substrate and a liquid crystal material is driven by controlling the strength of an electric field substantially parallel to the glass substrate. The electrodes and the semiconductor film are made curved, for example semi-circular or semi-elliptical, in sectional profile. These curved sectional profiles can be formed by suitably selecting and combining various patterning and etching methods. | 04-18-2013 |
20130094173 | Display Device And An Electronic Apparatus Using The Same - In a conventional display device comprising a sub-display, the display device is increased in thickness and in the number of components as the number of displays is increased. In the present invention, a dual emission display device is used so that either surface of a display is used as a main display or a sub-display. Accordingly, the display device can be reduced in thickness and in the number of components. Further, mechanical reliability can be enhanced when the invention is applied to a tablet PC, a video camera and the like. | 04-18-2013 |
20130095587 | METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE - The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. | 04-18-2013 |
20130095588 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor. | 04-18-2013 |
20130095617 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility, A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current. | 04-18-2013 |
20130099230 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×10 | 04-25-2013 |
20130099231 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×10 | 04-25-2013 |
20130099232 | SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×10 | 04-25-2013 |
20130099234 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor. | 04-25-2013 |
20130099237 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 04-25-2013 |
20130099299 | Semiconductor Device - An object is to provide a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of times of writing operations. A semiconductor device includes a source-bit line, a first signal line, a second signal line, a word line, and a memory cell connected between the source-bit lines. The memory cell includes a first transistor, a second transistor, and a capacitor. The second transistor is formed including an oxide semiconductor material. A gate electrode of the first transistor, one of a source and drain electrodes, and one of electrodes of the capacitor are electrically connected to one another. The source-bit line and a source electrode of the first transistor are electrically connected to each other. Another source-bit line adjacent to the above source-bit line and a drain electrode of the first transistor are electrically connected to each other. | 04-25-2013 |
20130099832 | Current Driving Circuit and Display Device Using The Current Driving Circuit - A current drive circuit which can improve a rate for signal writing and a driving rate of an element even when a signal current is small, and a display device using the current drive circuit are provided. The current drive circuit for supplying a signal current to a node of a driven circuit through a signal line includes a precharge function for supplying a precharge voltage to the node through the signal line and the precharge function includes a supply function for supplying the precharge voltage to the node and the signal line prior to supplying the signal current. | 04-25-2013 |
20130100723 | SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF - A semiconductor memory device in which capacitance of a capacitor is lower and integration degree is higher. A plurality of memory blocks is connected to one bit line BL_m. A memory block MB_n_m includes a sub bit line SBL_n_m, a write switch, and a plurality of memory cells. A sub bit line SBL_n+1_m adjacent to the sub bit line SBL_n_m is connected to an amplifier circuit AMP_n/n+1_m including two inverters and two selection switches. A circuit configuration of the amplifier circuit can be changed with the selection switches. The amplifier circuit is connected to the bit line BL_m through a read switch. Because of a sufficiently low capacitance of the sub bit line SBL_n_m, potential change due to electric charges of the capacitor in each memory cell can be amplified by the amplifier circuit AMP_n/n+1_m without an error, and the amplified data can be output to the bit line BL_m. | 04-25-2013 |
20130100748 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - In a conventional DRAM, data read errors are more likely to occur along with miniaturization of DRAM. A small change in the potential of a first bit line is inverted by a first inverter constituted by an n-channel transistor and a p-channel transistor, and is output to a second bit line through a first selection transistor, which is a first switch. Since the potential of the second bit line is the inverse of the potential of the first bit line, the potential difference between the first bit line and the second bit line is increased. The increased potential difference is amplified by a known sense amplifier, a flip-flop circuit composed of the first inverter and a second inverter (constituted by an n-channel transistor and a p-channel transistor), or the like. | 04-25-2013 |
20130112968 | SEMICONDUCTOR DEVICE - A semiconductor device which achieves miniaturization with favorable characteristics maintained is provided. In addition, a miniaturized semiconductor device is provided with high yield. In a semiconductor device including an oxide semiconductor, the contact resistance between the oxide semiconductor and the source electrode or the drain electrode is reduced with miniaturization advanced. Specifically, an oxide semiconductor film is processed to be an island-shaped oxide semiconductor film whose side surface has a tapered shape. Further, the side surface has a taper angle greater than or equal to 1° and less than 10°, and at least part of the source electrode and the drain electrode is in contact with the side surfaces of the oxide semiconductor film. With such a structure, the contact region of the oxide semiconductor film and the source electrode or the drain electrode is increased, whereby the contact resistance is reduced. | 05-09-2013 |
20130112980 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a bright and highly reliable light-emitting device. An anode ( | 05-09-2013 |
20130113044 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed. | 05-09-2013 |
20130114330 | SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF - In a conventional DRAM, a decrease in the capacitance of a capacitor causes an error in reading data. A plurality of memory blocks MB is connected to one bit line BL_m. Each memory block MB includes a sub bit line SBL, a plurality of memory cells, and a precharge transistor. The drain of a transistor of the memory cell is connected one of the bit line BL_m and the sub bit line SBL, whereas a capacitor of the memory cell is connected to the other one of the bit line BL_m and the sub bit line SBL. The capacitance of the sub bit line SBL is sufficiently low; thus, a potential change due to electric charges of the capacitor of the memory cell can be amplified by an amplifier circuit AMP without an error and the amplified signal can be output to the bit line. | 05-09-2013 |
20130119364 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A light-emitting device includes a transistor over a substrate and an insulating film over the transistor. The light-emitting device further includes a wiring over the insulating film and a light-emitting element. The insulating film includes a first opening and a second opening, and the wiring is electrically connected to the transistor through the first opening. The light-emitting element is provided in the second opening, and includes a first electrode, a second electrode, and an organic compound layer provided between the first electrode and the second electrode. | 05-16-2013 |
20130119365 | COMPOSITE MATERIAL, LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - An object of the present invention is to provide a composite material formed of an organic compound and an inorganic compound, and has an excellent carrier transporting property, an excellent carrier injecting property to the organic compound, as well as excellent transparency. A composite material of the present invention for achieving the above object is a composite material of an organic compound represented in the general formula below, and an inorganic compound. For the inorganic compound, an oxide of a transition metal, preferably an oxide of a metal belonging to groups 4 to 8 of the periodic table, in particular vanadium oxide, tantalum oxide, molybdenum oxide, tungsten oxide, rhenium oxide, and ruthenium oxide, can be used. | 05-16-2013 |
20130119374 | PHOTOELECTRIC CONVERSION DEVICE - To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV. | 05-16-2013 |
20130119375 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a miniaturized transistor having high electrical characteristics. The transistor includes a source electrode layer in contact with one side surface of the oxide semiconductor layer in the channel-length direction and a drain electrode layer in contact with the other side surface thereof. The transistor further includes a gate electrode layer in a region overlapping with a channel formation region with a gate insulating layer provided therebetween and a conductive layer having a function as part of the gate electrode layer in a region overlapping with the source electrode layer or the drain electrode layer with the gate insulating layer provided therebetween and in contact with a side surface of the gate electrode layer. With such a structure, an Lov region is formed with a scaled-down channel length maintained. | 05-16-2013 |
20130119376 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a highly reliable semiconductor device including a transistor using an oxide semiconductor. After a source electrode layer and a drain electrode layer are formed, an island-like oxide semiconductor layer is formed in a gap between these electrode layers so that a side surface of the oxide semiconductor layer is covered with a wiring, whereby light is prevented from entering the oxide semiconductor layer through the side surface. Further, a gate electrode layer is formed over the oxide semiconductor layer with a gate insulating layer interposed therebetween and impurities are introduced with the gate electrode layer used as a mask. Then, a conductive layer is provided on a side surface of the gate electrode layer in the channel length direction, whereby an Lov region is formed while maintaining a scaled-down channel length and entry of light from above into the oxide semiconductor layer is prevented. | 05-16-2013 |
20130119377 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film. | 05-16-2013 |
20130119378 | SEMICONDUCTOR DEVICE - The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current. | 05-16-2013 |
20130119380 | SEMICONDUCTOR DEVICE - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10 | 05-16-2013 |
20130119425 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME - An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode. | 05-16-2013 |
20130119428 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - The present invention provides a light-emitting element, a light-emitting device and an electronic device in which an optical path length through which generated light goes can be changed easily. The present invention provides a light-emitting element including a light-emitting layer between a first electrode and a second electrode, and a mixed layer in contact with the first electrode; in which the light-emitting layer includes a light-emitting substance; the mixed layer includes a hole transporting substance and a metal oxide showing an electron accepting property to the hole transporting substance, and has a thickness of 120 to 180 nm, and when a voltage is applied between the first electrode and the second electrode such that a potential of the first electrode is higher than that of the second electrode, the light-emitting substance emits light. | 05-16-2013 |
20130119561 | SEMICONDUCTOR DEVICE - To provide a semiconductor device in which wireless communication is performed between devices formed over different substrates and connection defects of wirings are reduced. A first device having a first antenna is provided over a first substrate, a second device having a second antenna which can communicate with the first antenna is provided over a second substrate, and the first substrate and the second substrate are bonded to each other to manufacture a semiconductor device. The first substrate and the second substrate are bonded to each other by bonding with a bonding layer interposed therebetween, anodic bonding, or surface activated bonding. | 05-16-2013 |
20130119776 | POWER RECEIVING DEVICE, POWER TRANSMISSION DEVICE, AND POWER FEEDING SYSTEM - A novel power receiving device and a novel power transmission device are provided. Power feeding and communication are performed using a magnetic resonance method. Specifically, in one embodiment of the present invention, power feeding is performed by generating a second high-frequency voltage based on a first high-frequency voltage induced in a resonant coil and communication is performed by modulating amplitude of the first high-frequency voltage induced in the resonant coil. Thus, it is possible to perform communication and power feeding based on data obtained by the communication in pseudo-parallel. | 05-16-2013 |
20130120229 | SIGNAL LINE DRIVER CIRCUIT AND LIQUID CRYSTAL DISPLAY DEVICE - To prevent malfunctions from occurring. A shift register, a selection circuit having a function of determining which a first pulse signal or a second pulse signal is output at the same potential level as a pulse signal input from the shift register, and a plurality of driving signal output circuits each having functions of generating and outputting a driving signal are provided. Each of the plurality of driving signal output circuits includes a latch unit, a buffer unit, and a switch unit for controlling rewriting of data stored in the latch unit. | 05-16-2013 |
20130120701 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The display device includes a gate electrode, a gate insulating film provided over the gate electrode, a semiconductor film provided over the gate insulating film to overlap with the gate electrode, an island-shaped first insulating film provided over the semiconductor film to overlap with the gate electrode, a first conductive film provided over the semiconductor film, a pair of second conductive films which is provided over the semiconductor film and between which the first insulating film is sandwiched, and a second insulating film provided over the first insulating film, the first conductive film, and the pair of second conductive films. In the second insulating film and the semiconductor film, an opening portion which is positioned between the first conductive film and the one or the other of the pair of second conductive films is provided. | 05-16-2013 |
20130120702 | LIQUID CRYSTAL DISPLAY DEVICE, EL DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF - A display device is manufactured with five photolithography steps: a step of forming a gate electrode, a step of forming a protective layer for reducing damage due to an etching step or the like, a step of forming a source electrode and a drain electrode, a step of forming a contact hole, and a step of forming a pixel electrode. The display device includes a groove portion which is formed in the step of forming the contact hole and separates the semiconductor layer. | 05-16-2013 |
20130121456 | DRIVER CIRCUIT, DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT, AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit. | 05-16-2013 |
20130122666 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc. | 05-16-2013 |
20130122667 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented. | 05-16-2013 |
20130122963 | Analog Circuit And Semiconductor Device - An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 | 05-16-2013 |
20130126861 | INSULATING FILM, FORMATION METHOD THEREOF, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize. | 05-23-2013 |
20130126862 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film. | 05-23-2013 |
20130126863 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized. | 05-23-2013 |
20130126868 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR ELEMENT - In a semiconductor element including an oxide semiconductor film as an active layer, stable electrical characteristics are achieved. A semiconductor element includes a base film which is an oxide film at least a surface of which has crystallinity; an oxide semiconductor film having crystallinity over the base film; a gate insulating film over the oxide semiconductor film; a gate electrode overlapping with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. The base film is a film containing indium and zinc. With the structure, a state of crystals in the oxide semiconductor film reflects that in the base film; thus, the oxide semiconductor film can have crystallinity in a large region in the thickness direction. Accordingly, the electrical characteristics of the semiconductor element including the film can be made stable. | 05-23-2013 |
20130126877 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element does not impart an adverse effect on the light-emitting element. It is another object of the invention to provide a method for manufacturing a display device in which penetration of water into the inside of the display device through a film having high moisture permeability can be suppressed without increasing processing steps considerably. A display device of the present invention comprises a thin film transistor and a light-emitting element, the light-emitting element including a light-emitting laminated body interposed between a first electrode and a second electrode; wherein the first electrode is formed over an insulating film formed over the thin film transistor; and wherein a planarizing film is formed in response to the first electrode between the first electrode and the insulating film. | 05-23-2013 |
20130126878 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an IC chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit driving the pixel portion are provided over the same substrate. The pixel portion and at least a part of the driver circuit are formed using thin film transistors in each of which an oxide semiconductor is used. Both the pixel portion and the driver circuit are provided over the same substrate, whereby manufacturing costs are reduced. | 05-23-2013 |
20130126879 | SEMICONDUCTOR DEVICE, DRIVING METHOD THEREOF AND ELECTRONIC DEVICE - The invention provides a semiconductor device having a current input type pixel in which a signal write speed is increased and an effect of variations between adjacent transistors is reduced. When a set operation is performed (write a signal), a source-drain voltage of one of two transistors connected in series becomes quite low, thus the set operation is performed to the other transistor. In an output operation, the two transistors operate as a multi-gate transistor, therefore, a current value in the output operation can be small. In other words, a current in the set operation can be large. Therefore, an effect of intersection capacitance and wiring resistance which are parasitic on a wiring and the like do not affect much, thereby the set operation can be performed rapidly. As one transistor is used in the set operation and the output operation, an effect of variations between adjacent transistors is lessened. | 05-23-2013 |
20130126973 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stress becomes a cause of reduction in electric characteristics of a TFT depending on the internal stress. According to the present invention, an impurity element is introduced into a wiring, or both the introduction of an impurity element and heat treatment are performed, whereby the wiring can be controlled to have a desired internal stress. It is effective that the present invention is particularly applied to a gate electrode. Further, it is possible that the introduction of an impurity element and the heat treatment are conducted to only a desired region to conduct control to attain a desired internal stress. | 05-23-2013 |
20130127497 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped. | 05-23-2013 |
20130127913 | Electronic Device - An easy to use electronic device is provided. The electronic device functions as a telephone and has a display portion, an audio input portion, an audio output portion, and operation keys. The display portion has a passive element, and the operation keys have LEDs. The direction of an image displayed by the LEDs is switchable. | 05-23-2013 |
20130128174 | Liquid Crystal Display Device And Semiconductor Device - By increasing an interval between electrodes which drives liquid crystals, a gradient of an electric field applied between the electrodes can be controlled and an optimal electric field can be applied between the electrodes. The invention includes a first electrode formed over a substrate, an insulating film formed over the substrate and the first electrode, a thin film transistor including a semiconductor film in which a source, a channel region, and a drain are formed over the insulating film, a second electrode located over the semiconductor film and the first electrode and including first opening patterns, and liquid crystals provided over the second electrode. | 05-23-2013 |
20130128199 | METHODS FOR FABRICATING A SEMICONDUCTOR DEVICE - The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed. | 05-23-2013 |
20130128207 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A liquid crystal display device which is resistant to physical impact and can retain high-quality display characteristics is provided. Further, a liquid crystal display device with high reliability and high performance is provided. In a liquid crystal display device in which a liquid crystal composition is interposed between a pair of substrates, a spacer for keeping a gap between the substrates is provided over a structure body provided under a pixel electrode layer or a common electrode layer. The structure body is provided to make the pixel electrode layer and the common electrode layer project into the liquid crystal composition, and the structure body is provided to extend to a region where the spacer is provided. Since the structure body is formed using one continuous film, regions of the surface thereof have substantially the same height and the spacer can be stably provided with good adhesion. | 05-23-2013 |
20130130061 | Heterocyclic Compound and Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Device Using the Same - To provide a novel heterocyclic compound having a bipolar property. To improve element characteristics of a light-emitting element by application of the novel heterocyclic compound to the light-emitting element. A heterocyclic compound represented by a general formula (G1) and a light-emitting element formed using the heterocyclic compound represented by the general formula (G1) are provided. When the heterocyclic compound represented by the general formula (G1) is used for the light-emitting element, the characteristics of the light-emitting element can be improved. | 05-23-2013 |
20130130438 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers. | 05-23-2013 |
20130130447 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - At least part of a semiconductor layer or a semiconductor substrate includes a semiconductor region having a large energy gap. The semiconductor region having a large energy gap is preferably formed from silicon carbide and is provided in a position at least overlapping with a gate electrode provided with an insulating layer between the semiconductor region and the gate electrode. By making a structure in which the semiconductor region is included in a channel formation region, a dielectric breakdown voltage is improved. | 05-23-2013 |
20130130476 | METHOD FOR CLEANING FILM FORMATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for cleaning a hot-wall type film formation apparatus having a batch processing system with industrially high mass productivity is provided. In the method, a carbon film deposited on an inner wall or the like of a reaction chamber of the apparatus is removed efficiently in a short time. To remove the carbon film deposited on the inner wall of the reaction chamber by a thermal CVD method, the reaction chamber is heated at a temperature higher than or equal to 700° C. and lower than or equal to 800° C., and oxygen is introduced into the reaction chamber. | 05-23-2013 |
20130133808 | METHOD FOR MANUFACTURING SPUTTERING TARGET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When an oxide semiconductor is deposited by a sputtering method, there is a difference in composition between a sputtering target and a film deposited using the sputtering target in some cases depending on a material of the oxide semiconductor. In manufacturing a sputtering target containing zinc oxide, a crystal which contains zinc oxide is formed in advance, the crystal is crushed, and then a predetermined amount of zinc oxide is added and mixed. After that, the resulting object is sintered to form the sputtering target. The composition of the sputtering target is adjusted by setting the proportion of zinc in the sputtering target higher than that of zinc in a film having a desired composition which is obtained at last, in consideration of the amount of zinc which is reduced at the time of deposition by a sputtering method, the amount of zinc which is reduced at the time of sintering, and the like. | 05-30-2013 |
20130134051 | FLEXIBLE SUBSTRATE PROCESSING APPARATUS - To provide a flexible substrate processing apparatus which allows the stable reduction of an oxide contained in a film-like structure body formed on a flexible substrate. The apparatus has a substrate carrying-out portion where a flexible substrate on which a film-like structure body is formed is unwound; a reduction treatment portion where an oxide contained in the film-like structure body formed on the flexible substrate is electrochemically reduced; a washing portion where the flexible substrate and the film-like structure body are washed; a drying portion where the flexible substrate and the film-like structure body are dried; and a substrate carrying-in portion where the flexible substrate on which the film-like structure body is formed is taken up. | 05-30-2013 |
20130134352 | LIQUID CRYSTAL COMPOSITION, LIQUID CRYSTAL ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE - Provided is a novel liquid crystal composition that can be used for a variety of liquid crystal devices. The novel liquid crystal composition exhibits a blue phase and includes a binaphthyl compound represented by a general formula (G1) as a chiral agent. In the general formula (G1), Ar | 05-30-2013 |
20130134395 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, LIGHTING DEVICE AND ORGANIC COMPOUND - A novel organic compound which can be used as a host material for a phosphorescent compound is provided. A light-emitting element containing the organic compound is provided. A light-emitting device, an electronic device, and a lighting device each of which includes the light-emitting element are provided. In the light-emitting element including a light-emitting layer interposed between a pair of electrodes, the light-emitting layer contains at least an organic compound and a phosphorescent compound. In the organic compound, a dibenzo[f,h]quinoxaline skeleton and an amino group having two substituents are bonded to each other through an arylene group. The substituents are separately an aryl group or a heteroaryl group. | 05-30-2013 |
20130134401 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE - It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished. | 05-30-2013 |
20130134404 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects. | 05-30-2013 |
20130134408 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS - It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side. | 05-30-2013 |
20130134413 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1 | 05-30-2013 |
20130134414 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A step for forming an island-shaped semiconductor layer of a semiconductor device used in a display device is omitted in order to manufacture the semiconductor device with high productivity and low cost. The semiconductor device is manufactured through four photolithography processes: four steps for forming a gate electrode, for forming a source electrode and a drain electrode, for forming a contact hole, and for forming a pixel electrode. In the step for forming the contact hole, a groove portion in which a semiconductor layer is removed is formed, whereby formation of a parasitic transistor is prevented. An oxide semiconductor is used as a material of the semiconductor layer in which a channel is formed, and an oxide semiconductor having a higher insulating property than the semiconductor layer is provided over the semiconductor layer. | 05-30-2013 |
20130134415 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which a shift of the threshold voltage of a transistor is suppressed is provided. A semiconductor device in which a decrease in the on-state current of a transistor is suppressed is provided. The semiconductor device is manufactured as follows: forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming an oxide semiconductor film over the gate insulating film; forming a metal oxide film having a higher reducing property than the oxide semiconductor film over the oxide semiconductor film; performing heat treatment while the metal oxide film and the oxide semiconductor film are in contact with each other, thereby the metal oxide film is reduced so that a metal film is formed; and processing the metal film to form a source electrode layer and a drain electrode layer. | 05-30-2013 |
20130134416 | SEMICONDUCTOR DISPLAY DEVICE - In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped. | 05-30-2013 |
20130134417 | DISPLAY DEVICE - A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode. | 05-30-2013 |
20130134422 | TRANSISTOR AND SEMICONDUCTOR DEVICE - To improve switching characteristics of a transistor in which a channel is formed in an oxide semiconductor layer. A parasitic channel is formed at an end portion of the oxide semiconductor layer because a source and a drain of the transistor are electrically connected to the end portion. That is, when at least one of the source and the drain of the transistor is not electrically connected to the end portion, the parasitic channel is not formed at the end portion. In view of this, a transistor having a structure in which at least one of a source and a drain of the transistor is not or less likely to be electrically connected to an end portion of an oxide semiconductor layer is provided. | 05-30-2013 |
20130134432 | SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - A multi-layered gate electrode of a crystalline TFT is constructed as a clad structure formed by deposition of a first gate electrode, a second gate electrode and a third gate electrode, to thereby to enhance the thermal resistance of the gate electrode. Additionally, an n-channel TFT is formed by selective doping to form a low-concentration impunty region which adjoins a channel forming region, and a sub-region overlapped by the gate electrode and a sub-region not overlapped by the gate electrode, to also mitigate a high electric field near the drain of the TFT and to simultaneously prevent the OFF current of the TFT from increasing. | 05-30-2013 |
20130135023 | PULSE SIGNAL OUTPUT CIRCUIT AND SHIFT REGISTER - A pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit are provided. A clock signal is supplied to one of transistors connected to a first output terminal. A power supply potential is applied to one of transistors connected to a second output terminal. Thus, power consumed by discharge and charge of the transistor included in the second output terminal can be reduced. Further, since a potential is supplied from a power source to the second output terminal, sufficient charge capability can be obtained. | 05-30-2013 |
20130135185 | DRIVER CIRCUIT FOR DISPLAY DEVICE AND DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT - A display device driver circuit in which a lookup table can be written into a memory circuit within a retrace period even when the lookup table is constantly reconstructed in accordance with a change in the external environment and stored in the memory circuit, and data of the lookup table can be held even if supply of power supply voltage stops. In a driver circuit for a display device, a memory circuit including a transistor having a semiconductor layer containing an oxide semiconductor is used as a memory circuit that stores a lookup table for correcting image signals in accordance with a change in the external environment. | 05-30-2013 |
20130135239 | CONTACT STRUCTURE AND SEMICONDUCTOR DEVICE - To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion of a connecting wiring on an active matrix substrate is electrically connected to an FPC by an anisotropic conductive film. The connecting wiring is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film, a side surface of the connecting wiring is covered with a protecting film made of an insulating material, thereby exposure to air of the metallic film can be avoided. | 05-30-2013 |
20130135277 | DISPLAY DEVICE AND ELECTRONIC DEVICE - To suppress enlargement of pixel area even in the case of reducing current supplied to an electroluminescent element. A switch transistor, a first driving transistor, an electroluminescent element, and a second driving transistor provided between the first driving transistor and the electroluminescent element are included. A power supply potential is supplied to a gate of the second driving transistor. Drain current of the second driving transistor is controlled by the first driving transistor and the second driving transistor, so that a value of current supplied to the electroluminescent element is controlled. | 05-30-2013 |
20130135278 | DISPLAY DEVICE - To reduce power consumption of a display device including a scan line driver circuit formed using either n-channel transistors or p-channel transistors when the scan line driver circuit outputs, to one of two kinds of scan lines, inverted or substantially inverted signals of signals output to the other of the two kinds of scan lines. The display device includes a plurality of pulse output circuits each of which outputs a signal to one of two kinds of scan lines and a plurality of inverted pulse output circuits each of which outputs, to the other of the two kinds of scan lines, an inverted or substantially inverted signal output from the each of the pulse output circuits. The plurality of inverted pulse output circuits operate with signals used for the operation of the plurality of pulse output circuits. Thus, through current generated in the inverted pulse output circuits can be reduced. | 05-30-2013 |
20130135943 | MEMORY CIRCUIT AND MEMORY DEVICE - To reduce power consumption, a memory circuit includes a latch unit in which first data and second data are rewritten and read in accordance with a control signal, a first switch unit that controls rewrite and read of the first data stored in the latch unit by being turned on or off in response to the control signal, and a second switch unit that controls rewrite and read of the second data stored in the latch unit by being turned on or off in response to the control signal. The latch unit includes a first inverter and a second inverter. At least one of the first inverter and the second inverter includes a first field-effect transistor, and a second field-effect transistor that has the same conductivity type as the first field-effect transistor and has a gate potential controlled in accordance with the control signal. | 05-30-2013 |
20130137194 | METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE AND THIN FILM FORMING APPARATUS - A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators. | 05-30-2013 |
20130137213 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer. | 05-30-2013 |
20130137226 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a manufacturing process of a semiconductor device that includes a bottom-gate transistor including an oxide semiconductor, an insulating film which is in contact with an oxide semiconductor film is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order. The insulating film which is in contact with the oxide semiconductor film refers to a gate insulating film provided under the oxide semiconductor film and an insulating film which is provided over the oxide semiconductor film and functions as a protective insulating film. The gate insulating film and/or the insulating film are/is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order. | 05-30-2013 |
20130137232 | METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film. | 05-30-2013 |
20130137255 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed. | 05-30-2013 |
20130140553 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film. | 06-06-2013 |
20130140554 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a minute transistor with a short channel length is provided. A gate insulating layer is formed over a gate electrode layer; an oxide semiconductor layer is formed over the gate insulating layer; a first conductive layer and a second conductive layer are formed over the oxide semiconductor layer; a conductive film is formed over the first conductive layer and the second conductive layer; a resist mask is formed over the conductive film by performing electron beam exposure; and then a third conductive layer and a fourth conductive layer are formed over and in contact with the first conductive layer and the second conductive layer, respectively, by selectively etching the conductive film. | 06-06-2013 |
20130140555 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a miniaturized transistor with stable and high electrical characteristics with high yield. In a semiconductor device including the transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in this order, a first sidewall insulating layer is provided in contact with a side surface of the gate electrode layer, and a second sidewall insulating layer is provided to cover a side surface of the first sidewall insulating layer. The first sidewall insulating layer is an aluminum oxide film in which a crevice with an even shape is formed on its side surface. The second sidewall insulating layer is provided to cover the crevice. A source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film and the second sidewall insulating layer. | 06-06-2013 |
20130140557 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed. | 06-06-2013 |
20130140558 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device functioning as a multivalued memory device including: memory cells connected in series; a driver circuit selecting a memory cell and driving a second signal line and a word line; a driver circuit selecting any of writing potentials and outputting it to a first signal line; a reading circuit comparing a potential of a bit line and a reference potential; and a potential generating circuit generating the writing potential and the reference potential. One of the memory cells includes: a first transistor connected to the bit line and a source line; a second transistor connected to the first and second signal line; and a third transistor connected to the word line, bit line, and source line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor is connected to one of source and drain electrodes of the second transistor. | 06-06-2013 |
20130140559 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced. | 06-06-2013 |
20130140560 | SEMICONDUCTOR DEVICE - An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×10 | 06-06-2013 |
20130140569 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor. Note that the second gate electrode not only controls the threshold voltages (Vth) of the first transistor and the second transistor but also has an effect of reducing interference of an electric field applied from respective first gate electrodes of the first transistor and the second transistor. | 06-06-2013 |
20130140617 | SEMICONDUCTOR DEVICE - A semiconductor device capable of high-speed operation. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is supplied with a first signal. One of a source and a drain of the second transistor is supplied with a first potential. A gate of the second transistor is supplied with a second signal. A first electrode of the capacitor is electrically connected to the other of the source and the drain of the first transistor. A second electrode of the capacitor is electrically connected to the other of the source and the drain of the second transistor. In a first period, the first signal is low and the second signal is high. In a second period, the first signal is high and the second signal is either low or high. | 06-06-2013 |
20130141961 | STORAGE DEVICE AND DRIVING METHOD THEREOF - An object is to provide a highly integrated storage device which can operate at high speed and a driving method thereof. The storage device includes two storage portions, two precharge switches, and one sense amplifier. In each of the storage portions, storage elements are arranged in a matrix. In each of the storage elements, a node electrically connected to a source or a drain of a transistor whose off-state current is small is a memory storing portion. A page buffer circuit is unnecessary; thus, high-speed operation is possible and high integration is achieved. | 06-06-2013 |
20130143090 | SQUARE LITHIUM SECONDARY BATTERY - A square lithium secondary battery includes a wound body in which a collective sheet in which a positive electrode sheet and a negative electrode sheet overlap each other with a first separator interposed therebetween is wound while a second separator is put inside the collective sheet. An active material mixture layer on one or both surfaces of at least one of the positive electrode sheet and the negative electrode sheet includes a region with a plurality of openings and a region with no opening. At least a bent portion of the collective sheet is covered with the region with the plurality of openings. | 06-06-2013 |
20130143387 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained. | 06-06-2013 |
20130146869 | TRANSISTOR AND METHOD FOR MANUFACTURING THE TRANSISTOR - It is an object to reduce characteristic variation among transistors and reduce contact resistance between an oxide semiconductor layer and a source electrode layer and a drain electrode layer, in a transistor where the oxide semiconductor layer is used as a channel layer. In a transistor where an oxide semiconductor is used as a channel layer, at least an amorphous structure is included in a region of an oxide semiconductor layer between a source electrode layer and a drain electrode layer, where a channel is to be formed, and a crystal structure is included in a region of the oxide semiconductor layer which is electrically connected to an external portion such as the source electrode layer and the drain electrode layer. | 06-13-2013 |
20130146870 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film. | 06-13-2013 |
20130146881 | AREA SENSOR AND DISPLAY APPARATUS PROVIDED WITH AN AREA SENSOR - An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light. | 06-13-2013 |
20130146882 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second wiring. A gate of the second transistor is electrically connected to a third wiring. A first terminal of the second transistor is electrically connected to the third wiring. A second terminal of the second transistor is electrically connected to a gate of the first transistor. A channel region is formed using an oxide semiconductor layer in each of the first transistor and the second transistor. The off-state current of each of the first transistor and the second transistor per channel width of 1 μm is 1 aA or less. | 06-13-2013 |
20130147281 | CONTACTLESS POWER FEEDING SYSTEM - A contactless power feeding system includes a power transmitting device and a power receiving device. The power transmitting device includes a first AC power source configured to generate an AC power with a first frequency, a second AC power source configured to generate an AC power with a second frequency which is different from the first frequency, a first electromagnetic induction coil, and a first resonant coil. The power receiving device includes a second resonant coil, a second electromagnetic induction coil, and a power storage unit. Power is wirelessly supplied to the power storage unit at the second frequency by a magnetic resonance phenomenon which occurs between the first resonant coil and the second resonant coil. | 06-13-2013 |
20130147518 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×10 | 06-13-2013 |
20130147519 | LOGIC CIRCUIT - An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor | 06-13-2013 |
20130147691 | DRIVING CIRCUIT OF A SEMICONDUCTOR DISPLAY DEVICE AND THE SEMICONDUCTOR DISPLAY DEVICE - There are provided a driving circuit of a semiconductor display device which can obtain an excellent picture without picture blur (display unevenness) and with high fineness/high resolution, and the semiconductor display device. A buffer circuit used in the driving circuit of the semiconductor display device is constituted by a plurality of TFTs each having a small channel width, and a plurality of such buffer circuits are connected in parallel with each other. | 06-13-2013 |
20130147907 | Display Device Having Image Pickup Function and Two-Way Communication System - A compact and lightweight display device having an image pickup function and a two-way communication system which can shoot an image of a user as an object and display an image at the same time without degrading image quality by disposing a semi-transmitting mirror or the like which blocks an image on the display screen (display plane). The display device having the image pickup function includes a display panel capable of transmitting visible light at least and arranging display elements which can be controlled by voltage or current, and an image pickup device disposed around the display panel. The image pickup device is input with data of an image of a user or the like by a reflector, or equipped with a fiberscope bundling optical fibers. | 06-13-2013 |
20130148041 | SEMICONDUCTOR DEVICE - A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit. | 06-13-2013 |
20130148411 | MEMORY DEVICE - A memory device including first to fourth memory cell arrays and a driver circuit including a pair of bit line driver circuits and a pair of word line driver circuits is provided. The first to fourth memory cell arrays are overlap with the driver circuit. Each of the pair of bit line driver circuits and a plurality of bit lines are connected through connection points on an edge along the boundary between the first and second memory cell arrays or on an edge along the boundary between the third and fourth memory cell arrays. Each of the pair of word line driver circuits and a plurality of word lines are connected through second connection points on an edge along the boundary between the first and fourth memory cell arrays or on an edge along the boundary between the second and third memory cell arrays. | 06-13-2013 |
20130149605 | NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY, AND MANUFACTURING METHODS THEREOF - A lithium secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and a negative electrode active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. A top surface of the base portion and at least a side surface of the protrusion portion are covered with the negative electrode active material layer. The negative electrode active material layer may be covered with graphene. | 06-13-2013 |
20130149798 | METHOD FOR MANUFACTURING DISPLAY DEVICE - One object is to provide a method for manufacturing a display device in which shift of the threshold voltage of a thin film transistor including an oxide semiconductor layer can be suppressed even when ultraviolet light irradiation is performed in the process for manufacturing the display device. In the method for manufacturing a display device, ultraviolet light irradiation is performed at least once, a thin film transistor including an oxide semiconductor layer is used for a switching element, and heat treatment for repairing damage to the oxide semiconductor layer caused by the ultraviolet light irradiation is performed after all the steps of ultraviolet light irradiation are completed. | 06-13-2013 |
20130149813 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME - An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced. | 06-13-2013 |
20130149816 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented. | 06-13-2013 |
20130149840 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other. | 06-13-2013 |
20130153877 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer. | 06-20-2013 |
20130153889 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10 | 06-20-2013 |
20130153890 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME - A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced. | 06-20-2013 |
20130153892 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a semiconductor device which includes a bottom-gate transistor including an oxide semiconductor film, the spin density of the oxide semiconductor film is lower than or equal to 1×10 | 06-20-2013 |
20130153894 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material. | 06-20-2013 |
20130153895 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon. | 06-20-2013 |
20130153910 | TRANSISTOR AND DISPLAY DEVICE - It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided. | 06-20-2013 |
20130154385 | POWER RECEIVING DEVICE AND POWER FEEDING SYSTEM - The invented power feeding system includes power transmitting and power receiving devices. The power transmitting device includes an AC power source, a first electromagnetic induction coil, a first resonant coil, and a first capacitor. The power receiving device includes an antenna unit including a second resonant coil, a second capacitor, and a second electromagnetic induction coil; a charging circuit unit including a rectifier circuit, a power storage device, a current detection circuit for detecting a current value supplied to the power storage device, and a voltage detection circuit for detecting a voltage value applied to the power storage device; and a communication control unit including a control circuit for generating a selection signal based on the detected current value and the detected current voltage, a plurality of switches to be turned on or off by the selection signal, and passive elements electrically connected to the plurality of switches. | 06-20-2013 |
20130154556 | DC-DC CONVERTER, POWER RECEIVING DEVICE, AND POWER FEEDING SYSTEM - A circuit capable of keeping input impedance constant is provided. Further, a circuit which can contribute to improvement in power feeding efficiency in power feeding by a magnetic resonance method is provided. A voltage (a former voltage) proportional to a direct-current voltage input to a DC-DC converter from the outside and a voltage (a latter voltage) proportional to a current input from the outside are detected, and the ratio of the former voltage and the latter voltage are held constant. Accordingly, input impedance can be kept constant. Further, impedance conversion is performed in the DC-DC converter. Thus, even when the battery in which power feeding is performed exists on an output side of the DC-DC converter, input impedance can be kept constant. Consequently, power can be supplied to a power receiving device including the DC-DC converter and the battery with high power feeding efficiency by a magnetic resonance method. | 06-20-2013 |
20130155368 | LIQUID CRYSTAL COMPOSITION, LIQUID CRYSTAL ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE - A novel liquid crystal composition that can be used for a variety of liquid crystal devices is provided. A stable liquid crystal element that is driven at low voltage and that withstands physical impact is provided with the use of the novel liquid crystal composition. A highly reliable liquid crystal display device with low power consumption and high display quality is provided with the use of the liquid crystal element. The liquid crystal composition exhibits a blue phase and contains nematic liquid crystal, 1,4:3,6-dianhydro-2,5-bis[4-(n-hexyl-1-oxy)benzoic acid]sorbitol (abbreviation: ISO-(6OBA) | 06-20-2013 |
20130155790 | STORAGE DEVICE - Noise attributed to signals of a word line, in first and second bit lines which are overlapped with the same word line in memory cells stacked in a three-dimensional manner is reduced in a storage device with a folded bit-line architecture. The storage device includes a driver circuit including a sense amplifier, and first and second memory cell arrays which are stacked each other. The first memory cell array includes a first memory cell electrically connected to the first bit line and a first word line, and the second memory cell array includes a second memory cell electrically connected to the second bit line and a second word line. The first and second bit lines are electrically connected to the sense amplifier in the folded bit-line architecture. The first word line, first bit line, second bit line, and second word line are disposed in this manner over the driver circuit. | 06-20-2013 |
20130156942 | METHOD FOR FORMING POSITIVE ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY - To provide a positive electrode for a lithium-ion secondary battery, which is highly filled with a positive electrode active material and has a high-density positive electrode active material layer. To provide a lithium-ion secondary battery having high capacity and improved cycle characteristics with use of the positive electrode. After graphene oxide is dispersed in a dispersion medium, a positive electrode active material is added and mixed to form a mixture. A binder is added to the mixture and mixed to form a positive electrode paste. The positive electrode paste is applied to a positive electrode current collector and the dispersion medium contained in the positive electrode paste is evaporated, and then, the graphene oxide is reduced, so that a positive electrode active material layer containing graphene is formed over the positive electrode current collector. | 06-20-2013 |
20130157398 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer. | 06-20-2013 |
20130157411 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere. | 06-20-2013 |
20130157422 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In the semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and an aluminum film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in such a manner that oxygen is introduced to the insulating layer and the aluminum film from a position above the aluminum film, whereby a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the aluminum film is oxidized to form an aluminum oxide film. | 06-20-2013 |
20130161605 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A bottom-gate transistor with a short channel length and a method for manufacturing the transistor are provided. A bottom-gate transistor with a short channel length in which portions of a source electrode and a drain electrode which are proximate to a channel formation region are thinner than other portions thereof was devised. In addition, the portions of the source electrode and the drain electrode which are proximate to the channel formation region are formed in a later step than the other portions thereof, whereby a bottom-gate transistor with a short channel length can be manufactured. | 06-27-2013 |
20130161606 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR ELEMENT - A structure including an oxide semiconductor layer which is provided over an insulating surface and includes a channel formation region and a pair of low-resistance regions between which the channel formation region is positioned, a gate insulating film covering a top surface and a side surface of the oxide semiconductor layer, a gate electrode covering a top surface and a side surface of the channel formation region with the gate insulating film positioned therebetween, and electrodes electrically connected to the low-resistance regions is employed. The electrodes are electrically connected to at least side surfaces of the low-resistance regions, so that contact resistance with the source electrode and the drain electrode is reduced. | 06-27-2013 |
20130161607 | SEMICONDUCTOR DEVICE - A semiconductor device with high productivity and high yield is provided. The semiconductor device includes a word line, a capacitor line, a first bit line, a second bit line, and a first transistor and a second transistor each of which includes a gate, a source, and a drain. The first transistor and the second transistor at least partly overlap with each other, and the gates of the first transistor and the second transistor are connected to the word line. A capacitor is formed between at least part of the capacitor line and each of the drains of the first transistor and the second transistor. The first bit line is connected to the source of the first transistor, and the second bit line is connected to the source of the second transistor. | 06-27-2013 |
20130161608 | SEMICONDUCTOR DEVICE - Provided is a transistor which includes an oxide semiconductor film and has stable electrical characteristics. In the transistor, over an oxide film which can release oxygen by being heated, a first oxide semiconductor film which can suppress oxygen release at least from the oxide film is formed. Over the first oxide semiconductor film, a second oxide semiconductor film is formed. With such a structure in which the oxide semiconductor films are stacked, the oxygen release from the oxide film can be suppressed at the time of the formation of the second oxide semiconductor film, and oxygen can be released from the oxide film in later-performed heat treatment. Thus, oxygen can pass through the first oxide semiconductor film to be favorably supplied to the second oxide semiconductor film. Oxygen supplied to the second oxide semiconductor film can suppress the generation of oxygen deficiency, resulting in stable electrical characteristics. | 06-27-2013 |
20130161609 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The number of manufacturing steps is reduced to provide a semiconductor device with high productivity and low cost. A semiconductor device with low power consumption and high reliability is provided. A photolithography process for forming an island-shaped semiconductor layer is omitted, and a semiconductor device is manufactured through at least four photolithography processes: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for forming a source electrode and a drain electrode (including a wiring or the like formed from the same layer), a step for forming a contact hole, and a step for forming a pixel electrode. In the step for forming the contact hole, a groove portion is formed, whereby formation of a parasitic transistor is prevented. The groove portion overlaps with the wiring with an insulating layer provided therebetween. | 06-27-2013 |
20130161610 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and a metal film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in a manner such that oxygen is introduced into the insulating layer and the metal film from a position above the metal film. Thus, a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the metal film is oxidized to form a metal oxide film. Further, resistivity of the metal oxide film is greater than or equal to 1×10 | 06-27-2013 |
20130161611 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Release of oxygen at a side surface of an island-shaped oxide semiconductor film is controlled and decrease in resistance is prevented. A semiconductor device includes an island-shaped oxide semiconductor film at least partly including a crystal, a first gate insulating film provided to cover at least a side surface of the island-shaped oxide semiconductor film, and a second gate insulating film provided to cover at least the island-shaped oxide semiconductor film and the first gate insulating film. The first gate insulating film is an insulating film that supplies oxygen to the island-shaped oxide semiconductor film, and the second gate insulating film is an insulating film which has a low oxygen-transmitting property | 06-27-2013 |
20130161621 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed. | 06-27-2013 |
20130161623 | SEMICONDUCTOR DEVICE - The present invention intends to realize a narrow flame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique. | 06-27-2013 |
20130161713 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device which includes a memory cell including two or more sub memory cells is provided. The sub memory cells each including a word line, a bit line, a first capacitor, a second capacitor, and a transistor. In the semiconductor device, the sub memory cells are stacked in the memory cell; a first gate and a second gate are formed with a semiconductor film provided therebetween in the transistor; the first gate and the second gate are connected to the word line; one of a source and a drain of the transistor is connected to the bit line; the other of the source and the drain of the transistor is connected to the first capacitor and the second capacitor; and the first gate and the second gate of the transistor in each sub memory cell overlap with each other and are connected to each other. | 06-27-2013 |
20130161714 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device capable of accurate data retention even with a memory element including a depletion mode transistor. A gate terminal of a transistor for controlling input of a signal to a signal holding portion is negatively charged in advance. The connection to a power supply is physically broken, whereby negative charge is held at the gate terminal. Further, a capacitor having terminals one of which is electrically connected to the gate terminal of the transistor is provided, and thus switching operation of the transistor is controlled with the capacitor. | 06-27-2013 |
20130162203 | POWER RECEIVING DEVICE AND WIRELESS POWER SUPPLY SYSTEM - Provided is a power receiving device in which supply of power from a power supply device can be stopped while a reduction in Q-value is suppressed. The power receiving device includes a first antenna which forms resonant coupling with an antenna of the power supply device; a second antenna which forms electromagnetic induction coupling with the first antenna; a rectifier circuit including a plurality of switches and performing a first operation or a second operation depending on whether the plurality of switches is ON or OFF, the first operation being an operation in which voltage applied from the second antenna is rectified to be outputted, and the second operation being an operation in which a pair of power supply points is short-circuited; a load to which the voltage is applied; and a control circuit which generates a signal for selecting ON or OFF of the plurality of switches. | 06-27-2013 |
20130162305 | SEMICONDUCTOR DEVICE, IMAGE DISPLAY DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE - To provide a semiconductor device with reduced power consumption that includes a selection transistor. To provide a semiconductor device capable of high-speed operation without increasing a power supply potential. A buffer circuit connected to a gate line has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential in response to a selection signal. Specifically, a bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side in the buffer circuit. Further, the bootstrap circuit boosts the potential when the gate line is selected, and does not boost the potential when the gate line is not selected. | 06-27-2013 |
20130162306 | METHOD FOR DRIVING SEMICONDUCTOR DEVICE - Provided is a method for driving a semiconductor device, which allows a reduction in scale of a circuit, reduce the power consumption, and increase the speed of reading data. An H level (data “1”) potential or an L level (data “0”) potential is written to a node of a memory cell. Potentials of a source line and a bit line are set to the same potential at an M level (L level06-27-2013 | |
20130162482 | WIRELESS CHIP - The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled after being used for managing the manufacture, circulation, and retail. | 06-27-2013 |
20130162609 | DISPLAY DEVICE - To provide a display device with high image quality and fewer terminals. The present invention is made with a focus on the positional relation between a serial-parallel conversion circuit and an external connection terminal for supplying a serial signal to the serial-parallel conversion circuit. The structure conceived is such that a serial-parallel conversion circuit and an external connection terminal for supplying a serial signal to the serial-parallel conversion circuit are provided close to each other so that an RC load between the serial-parallel conversion circuit and the external connection terminal is reduced | 06-27-2013 |
20130162778 | MOTION RECOGNITION DEVICE - A motion recognition device capable of recognizing the motion of an object without contact with the object is provided. Further, a motion recognition device that has a simple structure and can recognize the motion of an object regardless of the state of the object is provided. By using a 3D TOF range image sensor in the motion recognition device, information on changes in position and shape is detected easily. Further, information on changes in position and shape of a fast-moving object is detected easily. Motion recognition is performed on the basis of pattern matching. Imaging data used for pattern matching is acquired from a 3D range measuring sensor. Object data is selected from imaging data on an object that changes over time, and motion data is estimated from a time change in selected object data. The motion recognition device performs operation defined by output data generated from the motion data. | 06-27-2013 |
20130162923 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - It is an object to decrease the number of transistors connected to a capacitor. In a structure, a capacitor and one transistor are included, one electrode of the capacitor is connected to a wiring, and the other electrode of the capacitor is connected to a gate of the transistor. Since a clock signal is input to the wiring, the clock signal is input to the gate of the transistor through the capacitor. Then, on/off of the transistor is controlled by a signal which synchronizes with the clock signal, so that a period when the transistor is on and a period when the transistor is off are repeated. In this manner, deterioration of the transistor can be suppressed. | 06-27-2013 |
20130163350 | LEVEL-SHIFT CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT - A level-shift circuit with simpler circuit structure is provided. The level-shift circuit includes a first transistor in which a first power source potential is applied to a source electrode and a first gate electrode and a second power source potential is applied to a second gate electrode, and an inverter circuit to which a first input signal is applied and either a third power source potential or a potential obtained by subtracting an amount of change in the threshold voltage of the first transistor from the first power source potential is supplied as a power source voltage and from which a first output signal is output. A channel formation region of the first transistor is formed in an oxide semiconductor film. | 06-27-2013 |
20130164609 | NONAQUEOUS SOLVENT, NONAQUEOUS ELECTROLYTE, AND POWER STORAGE DEVICE - A power storage device using an organic solvent as a nonaqueous solvent for a nonaqueous electrolyte, in which a CV charging period in CCCV charging can be prevented from being extended and which has high performance, can be provided. The power storage device includes a positive electrode, a negative electrode, and a nonaqueous electrolyte. The nonaqueous electrolyte includes an ionic liquid including an alicyclic quaternary ammonium cation having one or more substituents and a counter anion to the alicyclic quaternary ammonium cation, a cyclic ester, and an alkali metal salt. In particular, in the power storage device, the ionic liquid content is greater than or equal to 70 wt % and less than 100 wt % per unit weight of the ionic liquid and the cyclic ester in the nonaqueous electrolyte, or greater than or equal to 50 wt % and less than 80 wt % per unit weight of the nonaqueous electrolyte. | 06-27-2013 |
20130164610 | IONIC LIQUID, NONAQUEOUS ELECTROLYTE, AND POWER STORAGE DEVICE - A nonaqueous electrolyte of the present invention includes an ionic liquid including a first alicyclic quaternary ammonium cation having one or more substituents, a second alicyclic quaternary ammonium cation having an alicyclic skeleton that is the same as an alicyclic skeleton of the first alicyclic quaternary ammonium cation, and a counter anion to the first alicyclic quaternary ammonium cation and the second alicyclic quaternary ammonium cation and an alkali metal salt. In the second alicyclic quaternary ammonium cation, one of substituents bonded to a nitrogen atom in the alicyclic skeleton is a substituent including a halogen element. In the ionic liquid, the amount of a salt including the second alicyclic quaternary ammonium cation is less than or equal to 1 wt % per unit weight of the ionic liquid, or is less than or equal to 0.8 wt % per unit weight of the nonaqueous electrolyte. | 06-27-2013 |
20130164611 | POWER STORAGE DEVICE - Disclosed is a power storage device including a negative electrode and a positive electrode. The negative electrode includes a negative electrode current collector including a common portion and a plurality of protrusions protruding from the common portion, and a negative electrode active material layer which covers a side surface of the protrusion. The positive electrode faces the negative electrode with an electrolyte provided therebetween. In the plurality of protrusions, a distance between adjacent protrusions is a distance with which adjacent negative electrode active material layers are in contact with each other before the capacity of the negative electrode active material layer reaches the theoretical capacity of the negative electrode active material layer by insertion of carrier ions from the positive electrode. | 06-27-2013 |
20130164612 | NEGATIVE ELECTRODE FOR NON-AQUEOUS SECONDARY BATTERY, NON-AQUEOUS SECONDARY BATTERY, AND MANUFACTURING METHODS THEREOF - A non-aqueous secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and an active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. Top surfaces and side surfaces of the protrusion portions and a top surface of the base portion are covered with the active material layer. The active material layer includes a plurality of whiskers. The active material layer may be covered with graphene. | 06-27-2013 |
20130164619 | POSITIVE ELECTRODE FOR SECONDARY BATTERY AND MANUFACTURING METHOD OF POSITIVE ELECTRODE FOR SECONDARY BATTERY - The positive electrode active material layer includes a plurality of particles of a positive electrode active material and a reaction mixture where reduced graphene oxide is bonded to a polymer having a functional group as a side chain. The reduced graphene oxide has a sheet-like shape and high conductivity and thus functions as a conductive additive by being in contact with the plurality of particles of the positive electrode active material. The reaction mixture serves as an excellent binder since the reduced graphene oxide is bonded to the polymer. Therefore, even a small amount of the reaction mixture where the reduced graphene oxide is covalently bonded to the polymer excellently serves as a conductive additive and a binder. | 06-27-2013 |
20130164899 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics is manufactured. In the semiconductor device which includes an inverted-staggered transistor having a bottom-gate structure and being provided over a substrate having an insulating surface, at least a first gate insulating film and a second gate insulating film are provided between a gate electrode layer and an oxide semiconductor film, and heat treatment is performed at a temperature of 450° C. or higher, preferably 650° C. or higher, and then the oxide semiconductor film is formed. By the heat treatment at a temperature of 450° C. or higher before the formation of the oxide semiconductor film, diffusion of hydrogen elements into the oxide semiconductor film, which causes degradation or variations in electric characteristics of the transistor, can be reduced, so that the transistor can have stable electric characteristics. | 06-27-2013 |
20130164920 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film are reduced and electric characteristics of a transistor including the oxide semiconductor film are improved. Further, a highly reliable semiconductor device including the transistor including the oxide semiconductor film is provided. In the transistor including the oxide semiconductor film, at least one insulating film in contact with the oxide semiconductor film contains excess oxygen. By the excess oxygen included in the insulating film in contact with the oxide semiconductor film, oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced. Note that the insulating film including the excess oxygen has a profile of the excess oxygen concentration having two or more local maximum values in the depth direction. | 06-27-2013 |
20130168650 | Electroluminescent Element and Light-Emitting Device - An electroluminescent element which can easily control the balance of color in white emission (white balance) is provided according to the present invention. The electroluminescent element comprises a first light-emitting layer containing one kind or two or more kinds of light-emitting materials, and a second light-emitting layer containing two kinds of light-emitting materials (a host material and a phosphorescent material) in which the phosphorescent material is doped at a concentration of from 10 to 40 wt %, preferably, from 12.5 to 20 wt %. Consequently, blue emission can be obtained from the first light-emitting layer and green and red (or orange) emission can be obtained from the second light-emitting layer. An electroluminescent element having such device configuration can easily control white balance since emission peak intensity changes at the same rate in case of increasing a current density. | 07-04-2013 |
20130175523 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers. | 07-11-2013 |
20130175524 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode. | 07-11-2013 |
20130175525 | DISPLAY DEVICE - In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode. | 07-11-2013 |
20130175526 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided. | 07-11-2013 |
20130175530 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a fin-type transistor having an oxide semiconductor in a channel formation region in which the channel formation region comprising an oxide semiconductor is three-dimensionally structured and a gate electrode is arranged to extend over the channel formation region. Specifically, the fin-type transistor comprises: an insulator protruding from a substrate plane; an oxide semiconductor film extending beyond the insulator; a gate insulating film over the oxide semiconductor film; and a gate electrode over and extending beyond the oxide semiconductor film. This structure allows the expansion of the width of the channel formation region, which enables the miniaturization and high integration of a semiconductor device having the transistor. Additionally, the extremely small off-state current of the transistor contributes to the formation of a semiconductor device with significantly reduced power consumption. | 07-11-2013 |
20130175536 | EL DISPLAY DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC EQUIPMENT PROVIDED WITH THE EL DISPLAY DEVICE - An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element ( | 07-11-2013 |
20130176196 | Light Emitting Device - The invention provides a light emitting device which is capable of displaying on both sides, has a small volume, and is capable of being used as a module. A light emitting element represented by an EL element and the like is used in a pixel portion, and two pixel portions are provided in one light emitting device. A first pixel portion has a structure to emit light only from a counter electrode side of the light emitting element. A second pixel portion has a structure to emit light only from a pixel electrode side of the light emitting element. That is, in the first pixel portion and the second pixel portion, directions of light emission are reverse in front and back. | 07-11-2013 |
20130176516 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device is provided, which includes a thin film transistor including an oxide semiconductor layer, a first electrode layer, a second electrode layer having an opening, a light-transmitting chromatic-color resin layer between the thin film transistor and the second electrode layer, and a liquid crystal layer. One of the first electrode layer and the second electrode layer is a pixel electrode layer which is electrically connected to the thin film transistor, and the other of the first electrode layer and the second electrode layer is a common electrode layer. The light-transmitting chromatic-color resin layer is overlapped with the pixel electrode layer and the oxide semiconductor layer of the thin film transistor. | 07-11-2013 |
20130178015 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith. | 07-11-2013 |
20130180577 | PHOTOELECTRIC CONVERSION DEVICE - To provide a photoelectric conversion device including a passivation film in which an opening for connection to an electrode does not need to be provided. The photoelectric conversion device includes, between a pair of electrodes, a silicon substrate having p-type conductivity; a silicon semiconductor layer having n-type conductivity which is provided over one surface of the silicon substrate and in contact with one of the pair of electrodes; and an oxide semiconductor layer having p-type conductivity which is provided over the other surface of the silicon substrate and in contact with the other of the pair of electrodes. The oxide semiconductor layer is formed using an inorganic compound which contains an oxide of a metal belonging to any of Groups 4 to 8 in the periodic table as its main component and whose band gap is greater than or equal to 2 eV. | 07-18-2013 |
20130181203 | Display Device - At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous semiconductor film by laser annealing is applied. In order to change the crystallinity, a method of changing a scan direction of a continuous oscillating laser beam so that crystal growth directions are made different from each other is applied. Alternatively, a method of changing a channel length direction of TFT between the respective semiconductor regions without changing the scan direction of the continuous oscillating laser beam so that a crystal growth direction and a current flowing direction are different from each other is applied. | 07-18-2013 |
20130181214 | SEMICONDUCTOR DEVICE - The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less). Alternatively, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the resistivity of the source region and the drain region is 1.9×10 | 07-18-2013 |
20130181216 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off. | 07-18-2013 |
20130181223 | ELECTRIC CIRCUIT - A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor. | 07-18-2013 |
20130181540 | SEMICONDUCTOR DEVICE - In a multi-core semiconductor device, a data bus between CPUs or the like consumes a larger amount of power. By provision of a plurality of CPUs which transmit data by a backscattering method of a wireless signal, a router circuit which mediates data transmission and reception between the CPUs or the like, and a thread control circuit which has a thread scheduling function, a semiconductor device which consumes less power and has high arithmetic performance can be provided at low cost. | 07-18-2013 |
20130181854 | CIRCUIT, SENSOR CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SENSOR CIRCUIT - A sensor circuit for obtaining physical quantities with a small margin of error even when the temperature varies is provided. The sensor circuit includes a sensor, a sampling circuit for obtaining a voltage value or a current value of a signal output from the sensor during a predetermined period and holding the value, and an analog-to-digital converter circuit for converting the held analog voltage value or current value into a digital value. The sampling circuit includes a switch for obtaining the voltage value or the current value and holding the value. The switch includes a transistor including an oxide semiconductor in a channel formation region. | 07-18-2013 |
20130182199 | DISPLAY DEVICE - It is an object of the present invention to provide a display device where expansion of a frame portion over a substrate, which results from formation of a lead wiring over an active matrix substrate, is minimally suppressed to realize a narrow frame. According to one feature of a display device of the present invention, a chamfer portion is formed at least at an end portion of an active matrix substrate having a pixel portion of a pair of substrates disposed to be opposed to each other, and wirings (a source line, a gate line, a storage capacitor line, a leading out wiring, and the like) over the active matrix substrate are electrically connected by a common wiring formed in the chamfer portion. | 07-18-2013 |
20130187142 | Display Device - The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input into the pixel portion is reduced, and the magnitude of a current to flow through the EL element is allowed to be maintained at a constant level even when a temperature of an EL layer changes by providing the EL display with another EL element to be used for monitoring a temperature. | 07-25-2013 |
20130187150 | SEMICONDUCTOR DEVICE - A transistor in which a short-channel effect is not substantially caused and which has switching characteristics even in the case where the channel length is short is provided. Further, a highly integrated semiconductor device including the transistor is provided. A short-channel effect which is caused in a transistor including silicon is not substantially caused in the transistor including an oxide semiconductor film. The channel length of the transistor including the oxide semiconductor film is greater than or equal to 5 nm and less than 60 nm, and the channel width thereof is greater than or equal to 5 nm and less than 200 nm. At this time, the channel width is made 0.5 to 10 times as large as the channel length. | 07-25-2013 |
20130187151 | SEMICONDUCTOR DEVICE - Provided is a transistor which has favorable transistor characteristics and includes an oxide semiconductor, and a highly reliable semiconductor device which includes the transistor including the oxide semiconductor. In the semiconductor device including the transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode are stacked in this order, a sidewall insulating film is formed along side surfaces and a top surface of the gate electrode, and the oxide semiconductor film is subjected to etching treatment so as to have a cross shape having different lengths in the channel length direction or to have a larger length than a source electrode and a drain electrode in the channel width direction. Further, the source electrode and the drain electrode are formed in contact with the oxide semiconductor film. | 07-25-2013 |
20130187152 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region. | 07-25-2013 |
20130187153 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device including a transistor using an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a first insulating layer is formed in contact with the oxide semiconductor layer, and an oxygen doping treatment is performed thereon, whereby the first insulating layer is made to contain oxygen in excess of the stoichiometric composition. The formation of the second insulating layer over the first insulating layer enables excess oxygen included in the first insulating layer to be supplied efficiently to the oxide semiconductor layer. Accordingly, the highly reliable semiconductor device with stable electric characteristics can be provided. | 07-25-2013 |
20130187165 | Semiconductor Device, and Manufacturing Method Thereof - In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof. | 07-25-2013 |
20130187166 | LIGHT-EMITTING DEVICE - According to present invention, system on panel without complicating the process of TFT can be realized, and a light-emitting device that can be formed by lower cost than that of the conventional light-emitting device can be provided. A light-emitting device is provided in which a pixel portion is provided with a pixel including a light-emitting element and a TFT for controlling supply of current to the light-emitting element; a TFT included in a drive circuit and a TFT for controlling supply of current to the light-emitting element include a gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor film, which overlaps with the gate electrode via the gate insulating film, a pair of second semiconductor films formed over the first semiconductor film; the pair of second semiconductor films are doped with an impurity to have one conductivity type; and the first semiconductor film is formed by semiamorphous semiconductor. | 07-25-2013 |
20130187701 | SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME - In the case of reducing an effect of variations in current characteristics of transistors by inputting a signal current to a transistor in a pixel, a potential of a wiring is detected by using a precharge circuit. In the case where there is a difference between a predetermined potential and the potential of the wiring, a charge is supplied to the wiring to perform a precharge by charging rapidly. When the potential of the wiring reaches the predetermined potential, the supply of charge is stopped and a signal current only is supplied. Thus, a precharge is performed only in a period until the potential of the wiring reaches the predetermined potential, therefore, a precharge can be performed for an optimal period. | 07-25-2013 |
20130191673 | SEMICONDUCTOR DEVICE - To individually control supply of the power supply voltage to circuits, a semiconductor device includes a CPU, a memory that reads and writes data used in arithmetic operation of the CPU, a signal processing circuit that generates an output signal by converting a data signal generated by the arithmetic operation of the CPU, a first power supply control switch that controls supply of the power supply voltage to the CPU, a second power supply control switch that controls supply of the power supply voltage to the memory, a third power supply control switch that controls supply of the power supply voltage to the signal processing circuit, and a controller that at least has a function of controlling the first to third power supply control switches individually in accordance with an input signal and instruction signals input from the CPU and the signal processing circuit. | 07-25-2013 |
20130193424 | ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE - A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor. | 08-01-2013 |
20130193431 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are formed separately in one oxide semiconductor film. The region containing a high proportion of crystal components is formed so as to serve as a channel formation region and the other region is formed so as to contain a high proportion of amorphous components. It is preferable that an oxide semiconductor film in which a region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are mixed in a self-aligned manner be formed. To separately form the regions which differ in crystallinity in the oxide semiconductor film, first, an oxide semiconductor film containing a high proportion of crystal components is formed and then process for performing amorphization on part of the oxide semiconductor film is conducted. | 08-01-2013 |
20130193433 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having high electric characteristics and in which a capacitor is efficiently formed even if the semiconductor device has a miniaturized structure. In a top-gate (also referred to as staggered) transistor using an oxide semiconductor film as its active layer, a source electrode and a drain electrode has a two-layer structure (a first electrode film and a second electrode film). Then, a capacitor is formed using a film formed using a material and a step similar to those of the first electrode film, a gate insulating film, and a gate electrode. Accordingly, the transistor and the capacitor can be formed through the same process efficiently. Further, the second electrode is connected onto the oxide semiconductor film between a first electrode and a channel formation region of the transistor. Accordingly, resistance between source and drain electrodes can be reduced; therefore, electric characteristics of the semiconductor device can be improved. | 08-01-2013 |
20130193434 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized. | 08-01-2013 |
20130193493 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF - In a semiconductor device including a transistor using an oxide semiconductor film, stable electric characteristics can be provided and high reliability can be achieved. A structure of the semiconductor device, which achieves high-speed response and high-speed operation, is provided. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in order and a sidewall insulating layer is provided on the side surface of the gate electrode layer, the sidewall insulating layer has an oxygen-excess regions, which is formed in such a manner that a first insulating film is formed and then is subjected to oxygen doping treatment, a second insulating is formed over the first insulating film, and a stacked layer of the first insulating film and the second insulating film are etched. | 08-01-2013 |
20130193858 | SPONTANEOUS LIGHT EMITTING DEVICE AND DRIVING METHOD THEREOF | 08-01-2013 |
20130193874 | POWER SUPPLY CIRCUIT AND METHOD FOR DRIVING THE SAME - A power supply circuit with high power efficiency is provided. Alternatively, a power supply circuit with high power efficiency that is suitable for driving a light-emitting device is provided. The power supply circuit can switch current control in which driving is controlled based on information on current flowing through a load and voltage control in which driving is controlled based on information on voltage applied to a load. In a period during which voltage control is performed, a current detector for detecting current flowing through the load is deactivated so that current does not flow through the current detector. | 08-01-2013 |
20130193916 | SEMICONDUCTOR DEVICE AND IC LABEL, IC TAG, AND IC CARD HAVING THE SAME - The present invention provides a power supply circuit provided with a battery as a power source for supplying power to an RFID, and the battery of the power supply circuit is charged with a wireless signal. Then, a switching circuit is provided in the power supply circuit that supplies power to a signal control circuit which transmits and receives individual information to and from the outside to intermittently control supply of power to the signal control circuit by a signal from a low-frequency signal generation circuit. | 08-01-2013 |
20130194858 | SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF - A semiconductor device which stores data by using a transistor whose leakage current between source and drain in an off state is small as a writing transistor. In a matrix including a plurality of memory cells in which a drain of the writing transistor is connected to a gate of a reading transistor and the drain of the writing transistor is connected to one electrode of a capacitor, a gate of the writing transistor is connected to a writing word line; a source of the writing transistor is connected to a writing bit line; and a source and a drain of the reading transistor are connected to a reading bit line and a bias line. In order to reduce the number of wirings, the writing bit line or the bias line is substituted for the reading bit line in another column. | 08-01-2013 |
20130196054 | APPARATUS FOR FORMING A FILM AND AN ELECTROLUMINESCENCE DEVICE - A device having three evaporation sources and a unit for moving the respective evaporation sources in one chamber is used, whereby it becomes possible to increase efficiency of use of an evaporation material. Consequently, manufacturing cost can be reduced, and a uniform thickness can be obtained over an entire surface of a substrate even in the case in which a large area substrate is used. | 08-01-2013 |
20130196468 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film. | 08-01-2013 |
20130200365 | SEMICONDUCTOR DEVICE - A semiconductor device in which release of oxygen from side surfaces of an oxide semiconductor film including c-axis aligned crystal parts can be prevented is provided. The semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film including c-axis aligned crystal parts, and an oxide film including c-axis aligned crystal parts. In the semiconductor device, the first oxide semiconductor film, the second oxide semiconductor film, and the oxide film are each formed using a IGZO film, where the second oxide semiconductor film has a higher indium content than the first oxide semiconductor film, the first oxide semiconductor film has a higher indium content than the oxide film, the oxide film has a higher gallium content than the first oxide semiconductor film, and the first oxide semiconductor film has a higher gallium content than the second oxide semiconductor film. | 08-08-2013 |
20130200366 | SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer which is over the oxide semiconductor film so as to overlap with the gate electrode layer, and a source electrode layer provided so as to cover part of an outer edge portion of the oxide semiconductor film. An outer edge portion of the drain electrode layer is on an inner side than an outer edge portion of the gate electrode layer. | 08-08-2013 |
20130200367 | SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer. | 08-08-2013 |
20130200368 | SEMICONDUCTOR DEVICE - A semiconductor device with significantly low off-state current is provided. An oxide semiconductor material in which holes have a larger effective mass than electrons is used. A transistor is provided which includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer including a hole whose effective mass is 5 or more times, preferably 10 or more times, further preferably 20 or more times that of an electron in the oxide semiconductor layer, a source electrode layer in contact with the oxide semiconductor layer, and a drain electrode layer in contact with the oxide semiconductor layer. | 08-08-2013 |
20130200369 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 08-08-2013 |
20130200370 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×10 | 08-08-2013 |
20130200372 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - The present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode. | 08-08-2013 |
20130200375 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a highly reliable semiconductor device which includes a transistor including an oxide semiconductor. The semiconductor device includes an oxide semiconductor layer; a gate insulating layer provided over the oxide semiconductor layer; a gate electrode layer overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween; an insulating layer being in contact with part of an upper surface of the oxide semiconductor layer, covering a side surface of the gate insulating layer and a side surface and an upper surface of the gate electrode layer, and having a lower oxygen-transmitting property than the gate insulating layer; a sidewall insulating layer provided on the side surface of the gate electrode layer with the insulating layer provided therebetween; a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer. | 08-08-2013 |
20130200376 | TRANSISTOR AND SEMICONDUCTOR DEVICE - A transistor which is resistant to a short-channel effect is provided. A semiconductor which leads to the following is used in a junction portion between a source and a semiconductor layer and a junction portion between a drain and the semiconductor layer: a majority carrier density n | 08-08-2013 |
20130201752 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device in which stored data can be retained even when power is not supplied, and there is no limitation on the number of write cycles. The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, a memory cell connected between the source line and the bit line, a first driver circuit electrically connected to the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line and the source line. The first transistor is formed using a semiconductor material other than an oxide semiconductor. The second transistor is formed using an oxide semiconductor material. | 08-08-2013 |
20130203214 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film. | 08-08-2013 |