Seliskar
Carl James Seliskar, Cincinnati, OH US
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20090170144 | DETERMINATION OF VIABLE MICROORGANISMS USING COATED PARAMAGNETIC BEADS - The present invention relates to methods for the detection of microorganisms. In one embodiment, the present invention provides methods for detecting live microorganisms in a culture by capturing and culting the microorganisms on para-tropic-coated paramagnetic beads. This technique is useful for any application in which it is necessary to monitor the biological contamination level, for example drinking water, recreational waters, food processing waters and medical laboratories. In one embodiment, the method for determining the concentration of viable microorganisms in a sample according to the invention further comprises an inducer reagent, wherein the inducer reagent includes an inducer compound that induces the activity of an enzyme unique to the microorganism of interest. | 07-02-2009 |
Daniel Seliskar, Montreal CA
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20090149334 | METHODS AND APPARATUS FOR DETECTING LIQUID INSIDE INDIVIDUAL CHANNELS IN A MULTI-CHANNEL PLATE - There is provided a method of measuring properties of a liquid contained in individual wells inside a multi-well array, the method comprising steps of providing capacitor electrodes in the multi-well array, the electrodes adapted to detect a capacitance value of each one of the individual wells without interference of neighboring wells, measuring a capacitance inside each one of the individual wells, and using the capacitance measurements to calculate at least one property of the liquid contained in each one of the individual wells. There is further provided an apparatus for measuring properties of a liquid contained in individual wells inside a multi-well array, and a method of controlling quality of liquid handling task that is repeated across a set of individual wells inside a multi-well array. | 06-11-2009 |
James T. Seliskar, Bay City, MI US
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20090189321 | Thermoplastic composition and use for large parison blow molding applications - A polymeric blend composition, and method of using same for large parison blow molding applications, comprising greater than about 50 parts by weight of a carbonate polymer component (e.g., a branched polycarbonate having a weight average molecular weight (M | 07-30-2009 |
20100316823 | THERMOPLASTIC COMPOSITION AND USE FOR LARGE PARISON BLOW MOLDING APPLICATIONS - A polymeric blend composition, and method of using same for large parison blow molding applications, comprising greater than about 50 parts by weight of a carbonate polymer component (e.g., a branched polycarbonate having a weight average molecular weight (M | 12-16-2010 |
20120298907 | THERMOFORMABLE SOUND-DEADENING FILLED THERMOPLASTIC POLYOLEFIN COMPOSITION - The present invention relates to filled thermoplastic polyolefin compositions useful e.g., as sound-deadening sheeting for formed automotive applications comprising an ethyl vinyl acetate copolymer, one or more linear ethylene polymer and/or substantially linear polymer, and a filler, preferably calcium carbonate. Said composition demonstrates a good balance of melt strength and elongation such that it is particularly suitable for sheet extrusion and thermoforming articles therefrom. | 11-29-2012 |
20130187076 | SOUND-DEADENING FILLED THERMOPLASTIC POLYOLEFIN COMPOSITION - The present invention relates to filled thermoplastic polyolefin compositions useful e.g., as sound-deadening sheeting for formed automotive applications comprising a propylene polymer having a density equal to or greater than 0.885 g/cm | 07-25-2013 |
James Thomas Seliskar, Bay City, MI US
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20110065855 | POLYMERIC MATERIAL AND PROCESS FOR FORMING AND USING SAME - The present invention is directed to a polymeric material, particularly a thermoplastic material, the includes thermoplastic polyolefin and an elastomer. | 03-17-2011 |
John J. Seliskar, Midlothian, VA US
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20100155835 | Castellated gate MOSFET tetrode capable of fully-depleted operation - A castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device includes a semiconductor substrate region having an upper portion with a top surface and a lower portion with a bottom surface. A source region and a drain region are formed in the semiconductor substrate region, with adjoined primary and secondary channel-forming regions also disposed therein between the source and drain regions, thereby forming an integrated cascade structure. Trench isolation insulator islands, having upper and lower surfaces, surround the source and drain regions as well as the channel-forming regions. Both the primary and secondary channel-forming regions include pluralities of thin, spaced, vertically-orientated semiconductor channel elements that span longitudinally along the device between the source and drain regions. First and second gate structures are provided in the form of pluralities of spaced, castellated first and second gate elements interposed between the primary and secondary channel elements, respectively, with first and second top gate members interconnecting the first and second gate elements at their upper vertical ends to cover the primary and secondary channel elements. The adjoined primary and secondary channel elements are super-self-aligned from the first and second gate elements to the source and drain regions. Finally, first and second dielectric layers separate the primary and secondary channel elements from their respective gate structures. | 06-24-2010 |
John J. Seliskar, Charlottesville, VA US
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20100317163 | Mixed-signal semiconductor platform incorporating fully-depleted castellated-gate MOSFET device and method of manufacture thereof - A Mixed-Signal Semiconductor Platform Incorporating Castellated-Gate MOSFET device(s) capable of Fully-Depleted operation is disclosed along with a method of making the same. The composite device/technology platform has robust I/O applications and includes a starting semiconductor substrate of a first conductivity type. One or more isolated regions of at least a first conductivity type is separated by trench isolation insulator islands. Within an isolated region designated for castellated-gate MOSFETs there exists a semiconductor body consisting of an upper portion with an upper surface, and a lower portion with a lower surface. Also within the castellated-gate MOSFET region, there exists a source region, a drain region, and a channel-forming region disposed between the source and drain regions, and are all formed within the semiconductor substrate body. The channel-forming region within the isolated castellated-gate MOSFET region is made up of a plurality of thin, spaced, vertically-orientated conductive channel elements that span longitudinally along the device between the source and drain regions. One or more of the trench isolated regions may contain at least one type or polarity of logic and/or memory computing device. Alternately or additionally, one or more type of Logic and/or memory device may be incorporated within vertically displaced regions above the active body region of the semiconductor wafer, embedded within Interlevel Dielectric Layers. | 12-16-2010 |
John James Seliskar, Midlothian, VA US
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20120228710 | Castellated gate MOSFET tetrode capable of fully-depleted operation - A method of fabricating a castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device is formed on a semiconductor substrate region having an upper portion with a top surface and a lower portion with a bottom surface. A source region and a drain region are formed by ion implantation into the semiconductor substrate region, with adjoined primary and secondary channel-forming regions also disposed therein between the source and drain regions, thereby forming an integrated cascode structure. A plurality of thin semiconductor channel elements are formed by etching a plurality of spaced gate slots to a first predetermined depth into the substrate. The formation of first, second, and additional gate structures are described in two possible embodiments which facilitate the formation of self-aligned source and drain regions. | 09-13-2012 |