Patent application number | Description | Published |
20080224222 | SEMICONDUCTOR DEVICE HAVING A FIN TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV. | 09-18-2008 |
20080277743 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate electrode includes material having a second work function, wherein the second work function is higher than that of the spacers. | 11-13-2008 |
20090032887 | TRANSISTOR HAVING GATE ELECTRODE WITH CONTROLLED WORK FUNCTION AND MEMORY DEVICE HAVING THE SAME - A transistor includes a gate insulation layer over a substrate, a gate line comprising electrodes each having a different work function on the gate insulation layer, and a source junction and a drain junction formed inside portions of the substrate on first and second sides of the gate line. | 02-05-2009 |
20090114981 | SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME - In a high speed vertical channel transistor, a pillar structure is formed over a substrate, a gate electrode surrounds an outer wall of a lower portion of the pillar structure; and a word line extends in a direction to partially contact an outer wall of the gate electrode. The word line shifts toward a side of the pillar structure resulting in increased transistor speed. | 05-07-2009 |
20090218616 | TRANSISTOR HAVING VERTICAL CHANNEL AND METHOD FOR FABRICATING THE SAME - A semiconductor device including vertical channel transistor and a method for forming the transistor, which can significantly decrease the resistance of a word line is provided. A vertical channel transistor includes a substrate including pillars each of which has a lower portion corresponding to a channel region. A gate insulation layer is formed over the substrate including the pillars. A metal layer having a low resistance is used for forming a surrounding gate electrode to decrease resistance of a word line. A barrier metal layer is formed between a gate insulation layer and a surrounding gate electrode so that deterioration of characteristics of the insulation layer is prevented. A world line is formed connecting gate electrodes formed over the barrier layer to surround the lower portion of each pillar. | 09-03-2009 |
20090269917 | Method for manufacturing recess gate in a semiconductor device - A method for manufacturing a recess gate in a semiconductor device includes forming a field oxide layer on a substrate to define an active region, forming a hard mask pattern over the substrate to selectively expose at least a portion of the active region, forming a recess pattern in the active region through an etching process using the hard mask pattern as an etch barrier, removing the hard mask pattern, forming a gate insulating layer over the substrate, and forming a gate electrode over the gate insulating layer to cover at least the recess pattern. | 10-29-2009 |
20100133619 | SEMICONDUCTOR DEVICE HAVING A FIN TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV. | 06-03-2010 |
20100219466 | SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL TRANSISTOR - In a high speed vertical channel transistor, a pillar structure is formed over a substrate, a gate electrode surrounds an outer wall of a lower portion of the pillar structure; and a word line extends in a direction to partially contact an outer wall of the gate electrode. The word line shifts toward a side of the pillar structure resulting in increased transistor speed. | 09-02-2010 |
20100308403 | TRANSISTOR HAVING VERTICAL CHANNEL - A semiconductor device including vertical channel transistor and a method for forming the transistor, which can significantly decrease the resistance of a word line is provided. A vertical channel transistor includes a substrate including pillars each of which has a lower portion corresponding to a channel region. A gate insulation layer is formed over the substrate including the pillars. A metal layer having a low resistance is used for forming a surrounding gate electrode to decrease resistance of a word line. A barrier metal layer is formed between a gate insulation layer and a surrounding gate electrode so that deterioration of characteristics of the insulation layer is prevented. A world line is formed connecting gate electrodes formed over the barrier layer to surround the lower portion of each pillar. | 12-09-2010 |
20110068380 | SEMICONDUCTOR DEVICE WITH BULB-TYPE RECESSED CHANNEL AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers. | 03-24-2011 |
20110068393 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate electrode includes material having a second work function, wherein the second work function is higher than that of the spacers. | 03-24-2011 |
20120012928 | TRANSISTOR INCLUDING BULB-TYPE RECESS CHANNEL AND METHOD FOR FABRICATING THE SAME - A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer. | 01-19-2012 |