Patent application number | Description | Published |
20110139245 | THIN FILM INTERLAYER IN CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices. | 06-16-2011 |
20110139247 | GRADED ALLOY TELLURIDE LAYER IN CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - Cadmium telluride thin film photovoltaic devices are generally disclosed including a graded alloy telluride layer. The device can include a cadmium sulfide layer, a graded alloy telluride layer on the cadmium sulfide layer, and a back contact on the graded alloy telluride layer. The graded alloy telluride layer generally has an increasing alloy concentration and decreasing cadmium concentration extending in a direction from the cadmium sulfide layer towards the back contact layer. The device may also include a cadmium telluride layer between the cadmium sulfide layer and the graded alloy telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having a graded cadmium telluride structure. | 06-16-2011 |
20110143491 | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate. | 06-16-2011 |
20110244251 | Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device. | 10-06-2011 |
20110244620 | Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 10-06-2011 |
20110244621 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 10-06-2011 |
20110244622 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 10-06-2011 |
20110263063 | SEAL CONFIGURATION FOR A SYSTEM FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt and sublimation of the source material. The deposition head has a distribution plate at a defined distance above a horizontal conveyance plane of an upper surface of the substrates conveyed through a deposition area within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1. | 10-27-2011 |
20110265868 | CADMIUM SULFIDE LAYERS FOR USE IN CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. | 11-03-2011 |
20110315185 | METALLIC GRIDLINES AS FRONT CONTACTS OF A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Cadmium telluride based thin film photovoltaic devices are generally described. The device can include a transparent conductive oxide layer on a substrate. A plurality of metal gridlines can directly contact the transparent conductive oxide layer, and can be oriented in a first direction. A cadmium sulfide layer can be included on the transparent conductive oxide layer, and a cadmium telluride layer can be included on the cadmium sulfide layer. A plurality of scribe lines can be defined through the thickness of the cadmium sulfide layer and the cadmium telluride layer to define a plurality of photovoltaic cells such that the plurality of scribe lines are oriented in a second direction that intersects with the first direction. | 12-29-2011 |
20110315209 | SELECTIVELY DEPOSITED THIN FILM DEVICES AND METHODS FOR FORMING SELECTIVELY DEPOSITED THIN FILMS - A method for selectively depositing a thin film structure on a substrate. The method includes providing a process gas to a surface of the substrate and directing concentrated electromagnetic energy from a source of energy to at least a portion of the surface. The process gas is decomposed onto the substrate to form a selectively deposited thin film structure. A thin film device and apparatus for forming a selectively deposited thin film structure are also disclosed. | 12-29-2011 |
20120000520 | THIN FILM ARTICLE AND METHOD FOR FORMING A REDUCED CONDUCTIVE AREA IN TRANSPARENT CONDUCTIVE FILMS FOR PHOTOVOLTAIC MODULES - A method for forming a reduced conductive area in transparent conductive. The method includes providing a transparent, electrically conductive, chemically reducible material. A reducing atmosphere is provided and concentrated electromagnetic energy from an energy source is directed toward a portion of the transparent, electrically conductive, chemically reducible material to form a reduced conductive area. The reduced conductive area has greater electrical conductivity than the transparent, electrically conductive, chemically reducible material. A thin film article and photovoltaic module are also disclosed. | 01-05-2012 |
20120000776 | SPUTTERING TARGETS INCLUDING EXCESS CADMIUM FOR FORMING A CADMIUM STANNATE LAYER - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 01-05-2012 |
20120003772 | APPARATUS AND METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. | 01-05-2012 |
20120003784 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer. | 01-05-2012 |
20120021536 | METHOD AND SYSTEM FOR APPLICATION OF AN INSULATING DIELECTRIC MATERIAL TO PHOTOVOLTAIC MODULE SUBSTRATES - A method and related system are provided for depositing a dielectric material into voids in one or more of the semiconductor material layers of a photovoltaic (PV) module substrate. A first side of the substrate is exposed to a light source such that light is transmitted through the substrate and any voids in the semiconductor material layers on the opposite side of the substrate. The light transmitted through the voids is detected and a printer is registered to the pattern of detected light to print a dielectric material and fill the voids. | 01-26-2012 |
20120024361 | ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES - Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer. | 02-02-2012 |
20120024380 | INTERMIXING OF CADMIUM SULFIDE LAYERS AND CADMIUM TELLURIDE LAYERS FOR THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Cadmium telluride thin film photovoltaic devices are generally disclosed including an intermixed layer of cadmium sulfide and cadmium telluride between a cadmium sulfide layer and a cadmium telluride layer. The intermixed layer generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer towards the cadmium telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer of cadmium sulfide and cadmium telluride. | 02-02-2012 |
20120024692 | MIXED SPUTTERING TARGETS AND THEIR USE IN CADMIUM SULFIDE LAYERS OF CADMIUM TELLURIDE VASED THIN FILM PHOTOVOLTAIC DEVICES - Methods are generally provided of sputtering a cadmium sulfide layer on a substrate. The cadmium sulfide layer can be sputtered on a substrate from a mixed target including cadmium, sulfur, and oxygen. The cadmium sulfide layer can be used in methods of forming cadmium telluride thin film photovoltaic devices. | 02-02-2012 |
20120027921 | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - An apparatus and process for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate are provided. The apparatus includes at least one receptacle disposed in a deposition head. Each receptacle is configured for receipt of a granular source material. A heating system is configured to heat the receptacle(s) to sublimate the source material. A substantially vertical distribution plate is disposed between the receptacle(s) and a substrate conveyed through the apparatus. The distribution plate is positioned at a defined distance from a vertical conveyance plane of a deposition surface of the substrate. The distribution plate comprises a pattern of passages therethrough that distribute the sublimated source material for deposition onto the deposition surface of the substrate. | 02-02-2012 |
20120028393 | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE - An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate. | 02-02-2012 |
20120028395 | VAPOR DEPOSITION PROCESS FOR CONTINUOUS DEPOSITION AND TREATMENT OF A THIN FILM LAYER ON A SUBSTRATE - An integrated apparatus is provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate and subsequent vapor treatment. The apparatus can include a load vacuum chamber, a first vapor deposition chamber; and a second vapor deposition chamber that are integrally connected such that substrates being transported through the apparatus are kept at a system pressure less than about 760 Torr. A conveyor system can be operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through load vacuum chamber, into and through the first vapor deposition chamber, and into and through the second vapor deposition chamber at a controlled speed. Processes are also provided for manufacturing a thin film cadmium telluride thin film photovoltaic device. | 02-02-2012 |
20120028407 | MULTI-LAYER N-TYPE STACK FOR CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING - Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and a cadmium telluride layer on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer and a second layer, where the first layer comprises cadmium and sulfur and the second layer comprises cadmium and oxygen. The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices. | 02-02-2012 |
20120028409 | METHODS OF FORMING AN ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES - Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer. | 02-02-2012 |
20120060758 | DYNAMIC SYSTEM FOR VARIABLE HEATING OR COOLING OF LINEARLY CONVEYED SUBSTRATES - A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with each of the temperature control units to sequentially cycle output of the units from a steady-state temperature output along the conveyance direction as a function of position of the leading and trailing edges of the substrates within the chamber relative to the temperature control units so as to reduce edge-induced temperature variances in the substrates. | 03-15-2012 |
20120061235 | MIXED SPUTTERING TARGET OF CADMIUM SULFIDE AND CADMIUM TELLURIDE AND METHODS OF THEIR USE - Mixed targets are generally disclosed for sputtering an intermixed layer of cadmium sulfide and cadmium telluride. The mixed target can include cadmium sulfide, and cadmium telluride. Methods of forming the mixed target are also provided. For example, a powdered blend can be formed from powdered cadmium sulfide and powdered cadmium telluride, and pressed into a mixed target Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer. For example, a mixed target of cadmium sulfide and cadmium telluride can be sputtered directly on a cadmium sulfide layer to form an intermixed layer, and a cadmium telluride layer can be formed on the intermixed layer. | 03-15-2012 |
20120061238 | SPUTTERING CATHODE HAVING A NON-BONDED SEMICONDUCTING TARGET - A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering. | 03-15-2012 |
20120164784 | INTEGRATED DEPOSITION OF THIN FILM LAYERS IN CADMIUM TELLURIDE BASED PHOTOVOLTAIC MODULE MANUFACTURE - Apparatus and processes for thin film deposition of semiconducting layers in the formation of cadmium telluride thin film photovoltaic device are provided. The apparatus includes a series of integrally connected chambers, such as a load vacuum chamber connected to a load vacuum pump; a sputtering deposition chamber; a vacuum buffer chamber; and, a vapor deposition chamber. A conveyor system is operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through the load vacuum chamber, the sputtering deposition chamber, the vacuum buffer chamber, and the vapor deposition chamber at a controlled speed. The sputtering deposition chamber; the vacuum buffer chamber; and the vapor deposition chamber are integrally connected such that the substrates being transported through the apparatus are kept at a system pressure less than about 760 Torr. | 06-28-2012 |
20120298651 | Apparatus for Forming a Conductive Transparent Oxide Film Layer for Use in a Cadmium Telluride Based Thin Film Photovoltaic Device - Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material. | 11-29-2012 |
20130019934 | OXYGEN GETTER LAYER FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Methods are generally disclosed for forming a thin film photovoltaic device. According to one embodiment, a transparent conductive oxide layer and an oxygen getter layer can be formed on a transparent substrate. The transparent conductive oxide layer and the oxygen getter layer can then be annealed together such that oxygen atoms move from the transparent conductive oxide layer into the oxygen getter layer. A photovoltaic heterojunction can be formed on the TCO layer. Thin film photovoltaic devices are also generally disclosed. | 01-24-2013 |
20130019948 | STABILIZED BACK CONTACT FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Thin film photovoltaic devices including a thin film stabilization layer between the photovoltaic heterojunction and a back contact are provided. The thin film stabilization layer generally includes cadmium sulfide, but may also include copper and/or other materials. Methods are also provided for forming a thin film photovoltaic device via forming a thin film stabilization layer on a photovoltaic heterojunction (that generally overlies a transparent conductive oxide layer on a transparent substrate) and forming a back contact on the thin film stabilization layer. | 01-24-2013 |
20130025646 | PHOTOVOLTAIC MODULE WITH IMPROVED DEAD CELL CONTACT - The photovoltaic device can also include an insulating layer (e.g., an insulating material strip) beneath said first lead and said second lead, which may extend over the dead cell, extend over only a portion of the dead cell (i.e., the insulating layer does not extend over the entire width of the dead cell), or does not extend over the dead cell at all (e.g., ending at the scribe line separating the dead cell from the plurality of serially connected solar cells). When the insulating layer extends over at least a portion of the dead cell, the solder layer can extend over the insulating layer. Methods are also generally provided for manufacturing a photovoltaic device. | 01-31-2013 |
20130084668 | TEMPORARY ARC INDUCEMENT OF GLASS SUBSTRATE DURING DIFFUSIVE TRANSPORT DEPOSITION - Apparatus for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate is generally provided. The apparatus can include a deposition head; a distribution plate disposed below said distribution manifold and above an upper surface of a substrate transported through said apparatus and defining a pattern of passages therethrough; and, a carrying mechanism configured to transport the substrate in a machine direction under the distribution plate such that an upper surface of the substrate defines an arc in a cross-direction that is substantially perpendicular to the machine direction. Processes are also generally provided for vapor deposition of a sublimated source material to form thin film on a photovoltaic module substrate. | 04-04-2013 |
20130084669 | IN-LINE DEPOSITION SYSTEM AND PROCESS FOR DEPOSITION OF A THIN FILM LAYER - An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate is provided. The apparatus includes a receptacle configured to hold a source material and a distribution plate positioned above the receptacle. The distribution plate defines a pattern of passages therethrough. The apparatus also includes a conveyor configured to travel in a continuous loop such that its transfer surface passes above the distribution plate in a first direction to receive thereon sublimated source material passing through the passages of the distribution plate. The conveyor is also configured to travel in a second direction while carrying a substrate on its raised edges. A heating system heats the conveyor while it travels in the second direction to transfer the source material from the transfer surface to the substrate. A process is provided for vapor deposition of a sublimated source material to form thin film. | 04-04-2013 |
20130098111 | HEAT STRENGTHENING OF A GLASS SUPERSTRATE FOR THIN FILM PHOTOVOLTAIC DEVICES - Process and apparatus are generally provided for forming a thin film photovoltaic device. In one particular embodiment, the process includes: depositing a photovoltaic absorber layer on a glass substrate; heating the glass substrate to an anneal temperature; and quenching the glass substrate to cool the glass substrate to a quenched temperature in less than 10 seconds. The quenched temperature can be about 85° C. to about 200° C. less than the anneal temperature. The quenching atmosphere can have a quenching pressure of about 1 torr or more and can include an inert gas. | 04-25-2013 |
20130109124 | METHODS OF MAKING A TRANSPARENT LAYER AND A PHOTOVOLTAIC DEVICE | 05-02-2013 |
20130112246 | RIB ELEMENTS FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Thin film photovoltaic devices including a transparent substrate; a thin film stack comprising a transparent conductive oxide layer, a photovoltaic heterojunction, and back contact layer; and, an encapsulation material arranged such that the thin film stack is positioned between the transparent substrate and the encapsulation material are generally provided. The encapsulation material defines a rib element and can be generally positioned such that the rib element extends away from the thin film stack. | 05-09-2013 |
20130112257 | COMPOSITE ENCAPSULATION MATERIAL FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Thin film photovoltaic devices are generally provided. The thin film photovoltaic devices can include a transparent substrate that has a first volumetric thermal expansion coefficient; a thin film stack comprising a transparent conductive oxide layer, a photovoltaic heterojunction, and back contact layer; and, a composite encapsulation material on the back contact layer. The thin film stack is generally positioned between the transparent substrate and the composite encapsulation material. The composite encapsulation material can have a second volumetric thermal expansion coefficient that is within about +/−40% of the first volumetric thermal expansion coefficient of the transparent substrate. | 05-09-2013 |
20130122631 | Process for Continuous Deposition of a Sublimated Source Material to Form a Thin Film Layer on a Substrate - A method for vapor deposition of a sublimated source material, such as CdTe, onto substrates in a continuous, non-stop manner through the apparatus is provided. The sublimated source material moves through a distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1. | 05-16-2013 |
20130133712 | Three Terminal Thin Film Photovoltaic Module and Their Methods of Manufacture - Thin film photovoltaic devices are generally provided having three terminals. In one embodiment, the thin film photovoltaic device can include a first submodule defined by a first plurality of photovoltaic cells between a first dead cell and a first terminal cell; a second submodule defined by a second plurality of photovoltaic cells between a second dead cell and a second terminal cell; and a joint bus bar electrically connected to the first dead cell and the second dead cell. The first dead cell is adjacent to the second dead cell, with the first dead cell being separated from the second dead cell via a separation scribe. Methods are also generally provided for forming a thin film photovoltaic device. | 05-30-2013 |
20130133731 | CADMIUM DOPED TIN OXIDE BUFFER LAYER FOR THIN FILM PHOTOVOLTAIC DEVICES AND THEIR METHODS OF MANUFACTURE - Methods for forming a resistive transparent buffer layer on a substrate are provided. The method can include depositing a resistive transparent buffer layer on a transparent conductive oxide layer on a substrate. The resistive transparent buffer layer can comprise a cadmium doped tin oxide that has an as-deposited stoichiometry where cadmium is present in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. Zinc may also be provided in the resistive transparent buffer layer in certain embodiments. Additionally, thin film photovoltaic devices having such resistive transparent buffer layers are provided. | 05-30-2013 |
20130134037 | MIXED TARGETS FOR FORMING A CADMIUM DOPED TIN OXIDE BUFFER LAYER IN A THIN FILM PHOTOVOLTAIC DEVICES - Ceramic sputtering targets and mixed metal targets are generally provided for forming a resistive transparent buffer layer. The ceramic sputtering target can include tin, oxygen, and cadmium (and optionally zinc) in relative amounts such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. For example, the ceramic sputtering target can include tin oxide and cadmium oxide (and optionally zinc oxide) in relative amounts such that cadmium (and optional zinc) is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium (and optional zinc). The mixed metal sputtering target can include tin and cadmium such that cadmium is included in an atomic amount that is less than 33% of a total atomic amount of tin and cadmium. The mixed metal sputtering target can further include zinc. | 05-30-2013 |
20130230944 | DOPING AN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE VIA DIFFUSION FROM A WINDOW LAYER - Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing). | 09-05-2013 |
20140000703 | Thin Film Article and Method for Forming a Reduced Conductive Area in Transparent Conductive Films for Photovoltaic Modules | 01-02-2014 |
20140004655 | MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES | 01-02-2014 |
20140024172 | VAPOR DEPOSITION APPARATUS FOR CONTINUOUS DEPOSITION AND TREATMENT OF A THIN FILM LAYER ON A SUBSTRATE - Apparatus and method for vapor deposition of a sublimated source material are generally provided. The apparatus includes a deposition head with a first sublimation compartment and a second sublimation compartment, each configured for receipt and sublimation of a source material. A first distribution plate can be positioned at a first defined distance above a horizontal conveyance plane of an upper surface of substrates conveyed through a first deposition area of the apparatus, and a second distribution plate can be positioned at a second defined distance above a horizontal conveyance plane of an upper surface of substrates conveyed through a second deposition area of said apparatus. The first sublimation compartment and the second sublimation compartment can be isolated from each other such that the sublimated first source material is substantially prevented from mixing with the sublimated second source material, at least during sublimation. | 01-23-2014 |
20140027420 | DUAL LASERS FOR REMOVING GLASS-SIDE DEBRIS DURING THE MANUFACTURE OF THIN FILM PHOTOVOLTAIC DEVICES - Methods and systems for forming a scribe line in a thin film stack on an inner surface of a thin film photovoltaic superstrate are provided via the use of a cleaning laser beam and a scribing laser beam. The cleaning laser beam is focused directly onto the exposed surface of the superstrate such that the cleaning laser beam removes debris from the exposed surface of the superstrate, and the scribing laser beam is focused through the exposed surface of the superstrate and onto the thin film stack such that the scribing laser beam passes through the superstrate to form a scribe within the thin film stack on the inner surface of the superstrate. The method and system can further utilize a conveyor to transport the superstrate in a machine direction to move the superstrate past the cleaning laser source and the scribing laser source. | 01-30-2014 |
20140060635 | PHOTOVOLTAIC DEVICES - Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. | 03-06-2014 |
20140065763 | METHODS OF TREATING A SEMICONDUCTOR LAYER - Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented. | 03-06-2014 |
20140110245 | NON-BONDED ROTATABLE TARGETS AND THEIR METHODS OF SPUTTERING - Cylindrical sputtering targets, along with methods of their manufacture and use, are provided. The cylindrical sputtering target includes a tubular member having a length in a longitudinal direction and defining a tube surface, and a source material positioned about the tube surface of the tubular member and forming a sputtering surface about the tubular member. The source material generally defines an inner surface opposite of the sputtering surface and non-bonded to the tube surface of the tubular member. The inner surface of the source material is mechanically engaged to the tube surface of the tubular member, and/or the source material can include a first cylindrical ring directly stacked onto a second cylindrical ring with the first cylindrical ring being mechanically engaged to the second cylindrical ring. | 04-24-2014 |
20140110246 | METHODS FOR DEPOSITING A HOMOGENEOUS FILM VIA SPUTTERING FROM AN INHOMOGENEOUS TARGET - Methods for forming a thin film layer on a substrate are provided. The method can include: rotating a cylindrical target about a center axis; ejecting atoms from the sputtering surface with a plasma; transporting a substrate across the plasma at a substantially consistent speed; and depositing the atoms ejected from the sputtering surface onto the substrate to form a thin film layer. The cylindrical target generally includes a source material forming a sputtering surface about the cylindrical target, with the source material having a plurality of first areas and a plurality of second areas. Each first area includes a first compound, and each second area includes a second compound, while the first compound is different than the second compound. | 04-24-2014 |
20140110255 | CYLINDRICAL TARGET HAVING AN INHOMOGENEOUS SPUTTERING SURFACE FOR DEPOSITING A HOMOGENEOUS FILM - Cylindrical sputtering targets are provided. The cylindrical sputtering target can include a tubular member having a length in a longitudinal direction and defining a tube surface. A source material is positioned about the tube surface of the tubular member and forms a sputtering surface about the tubular member. The source material generally includes a plurality of first areas and a plurality of second areas, each first area comprising a first compound and each second area comprising a second compound that is different than the first compound. | 04-24-2014 |
20140131826 | SPATIALLY DISTRIBUTED CdS IN THIN FILM PHOTOVOLTAIC DEVICES AND THEIR METHODS OF MANUFACTURE - Thin film photovoltaic devices are provided. The device includes a transparent substrate; a transparent conductive oxide layer on the transparent substrate; an n-type window layer on the transparent conductive oxide layer, an absorber layer on the n-type window layer, and a back contact layer on the absorber layer. The n-type window layer includes a plurality of nanoparticles spatially distributed within a medium, with the nanoparticles comprising cadmium sulfide. In one embodiment, the medium has an optical bandgap that is greater than about | 05-15-2014 |
20140170801 | METHODS OF FABRICATING A PHOTOVOLTAIC MODULE, AND RELATED SYSTEM - A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented. | 06-19-2014 |
20140238849 | METHODS AND APPARATUS FOR CONTROLLING DOPANT CONCENTRATION IN THIN FILMS FORMED VIA SPUTTERING DEPOSITION - Sputtering chambers including one or more first sputtering targets within the sputtering chamber and one or more second sputtering targets are generally provided. Each first sputtering target comprises a source material, and each second sputtering target comprises the source material and a dopant. A conveyor system is configured to transport a plurality of substrates through the sputtering chamber to deposit a thin film onto a surface of each substrate. A power source is electrically connected to each of the first sputtering targets and the second sputtering target. A target shield can also be included within the sputtering chamber, and can be positioned between a portion of the second sputtering target and the conveyor system. The dopant can be present within the second sputtering target as a discrete insert within a cavity defined by the source material. Methods are also provided for making a sputtering target and depositing a thin film. | 08-28-2014 |
20140338722 | PHOTOVOLTAIC MODULES WITH A CONTROLLED COLOR ON THEIR WINDOW SURFACE AND ARRAYS THEREOF - Thin film photovoltaic devices are provided that include a transparent substrate defining an inner surface and an outer surface; a thin film stack on the inner surface of the transparent substrate; an encapsulation substrate on the thin film stack; and a color reflection film on the outer surface of the transparent substrate. The thin film stack has a photovoltaic heterojunction (e.g., formed from a n-type window thin film layer and an absorber thin film layer). Generally, the color reflection film comprises a colorant, such as a refractive material (e.g., a nitride material, an oxide material, or mixtures thereof). Methods are also provided for forming such a photovoltaic device, and for forming an array of photovoltaic devices to define an image. | 11-20-2014 |
20150031163 | Back Contact Paste with Te Enrichment and Copper Doping Control in Thin Film Photovoltaic Devices - Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing. | 01-29-2015 |
20150034154 | FINGER STRUCTURES PROTRUDING FROM ABSORBER LAYER FOR IMPROVED SOLAR CELL BACK CONTACT - Thin film photovoltaic devices that include a transparent substrate; a transparent conductive oxide layer on the transparent substrate; a n-type window layer on the transparent conductive oxide layer; a p-type absorber layer on the n-type window layer; and, a back contact on the p-type absorber layer are provided. The p-type absorber layer comprises cadmium telluride, and forms a photovoltaic junction with the n-type window layer. Generally, the p-type absorber layer defines a plurality of finger structures protruding from the p-type absorber layer into the back contact. The finger structures can have an aspect ratio of about 1 or greater and/or can have a height that is about 20% to about 200% of the thickness of the p-type absorber layer. Methods of forming such finger structures protruding from a back surface of the p-type absorber layer are also provided. | 02-05-2015 |
20150072466 | Doping An Absorber Layer Of A Photovoltaic Device Via Diffusion From A Window Layer - Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing). | 03-12-2015 |