Patent application number | Description | Published |
20120292723 | Magnetoresistive Device - A magnetoresistive device having a magnetic junction is provided. The magnetic junction of the magnetoresistive device includes a first fixed magnetic layer structure having a fixed magnetization orientation, a second fixed magnetic layer structure having a fixed magnetization orientation, and a free magnetic layer structure having a variable magnetization orientation, wherein the first fixed magnetic layer structure, the second fixed magnetic layer structure and the free magnetic layer structure are arranged one over the other, wherein the first fixed magnetic layer structure, the second fixed magnetic layer structure and the free magnetic layer structure have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane defined by an interface between the first fixed magnetic layer structure and the second fixed magnetic layer structure, wherein the respective magnetization orientations of the first fixed magnetic layer structure and the second fixed magnetic layer structure are oriented in opposite directions, and wherein the magnetization orientation of the first fixed magnetic layer structure is configured to oscillate in a first direction in response to a current or a voltage applied across the magnetic junction so as to change the magnetization orientation of the free magnetic layer structure. | 11-22-2012 |
20120306034 | Magnetoresistive Device - A magnetoresistive device having a magnetic junction including a first fixed magnetic layer structure, a second fixed magnetic layer structure, and a free magnetic layer structure, wherein the first second and free magnetic layer structures are arranged one over the other. The first second and free magnetic layer structures have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane defined by an interface between the free magnetic layer structure and either one of the first fixed magnetic layer structure or the second fixed magnetic layer structure. The respective magnetization orientations of the first and the second fixed magnetic layer structures are oriented anti-parallel to each other, and the first fixed magnetic layer structure is a static fixed magnetic layer structure having a switching field that is larger than a switching field of the free magnetic layer structure. | 12-06-2012 |
20130059168 | Magnetoresistance Device - A magnetoresistance device is provided. The magnetoresistance device includes a hard magnetic layer, and a soft magnetic layer having a multi-layer stack structure. The multi-layer stack structure has a first layer of a first material and a second layer of a second material. The first material includes cobalt iron boron and the second material includes palladium or platinum. | 03-07-2013 |
20130077391 | Magnetoresistive Device and a Writing Method for a Magnetoresistive Device - According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided. | 03-28-2013 |
20130108889 | Magnetoresistance Device and Memory Device Including the Magnetoresistance Device | 05-02-2013 |
20130134534 | Magnetoresistive Device - According to embodiments of the present invention, a magnetoresistive device having a magnetic junction is provided. The magnetic junction includes at least one fixed magnetic layer structure having a fixed magnetization orientation; and at least two free magnetic layer structures, each of the at least two free magnetic layer structures having a variable magnetization orientation; wherein the at least one fixed magnetic layer structure overlaps with the at least two free magnetic layer structures such that a current flow is possible through the magnetic junction; and wherein the at least one fixed magnetic layer structure and the at least two free magnetic layer structures are respectively configured such that the fixed magnetization orientation and the variable magnetization orientation are oriented in a direction substantially perpendicular to a plane defined by an interface between the at least one fixed magnetic layer structure and either one of the at least two free magnetic layer structures. | 05-30-2013 |
20130161770 | MAGNETORESISTIVE DEVICE AND A METHOD OF FORMING THE SAME - According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a fixed magnetic layer structure having a fixed magnetization orientation along a first easy axis, a free magnetic layer structure having a variable magnetization orientation along a second easy axis, and an offsetting magnetic layer structure having a magnetization orientation along an axis at least substantially non-parallel to at least one of the first easy axis or the second easy axis, wherein the fixed magnetic layer structure, the free magnetic layer structure and the offsetting magnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided. | 06-27-2013 |
Patent application number | Description | Published |
20080247097 | MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC HEAD - A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one nano-contact portion composed of a single ferromagnetic layer and disposed at least one portion between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm. | 10-09-2008 |
20090009915 | FILM AND METHOD FOR PRODUCING NANO-PARTICLES FOR MAGNETORESISTIVE DEVICE - A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed. | 01-08-2009 |
Patent application number | Description | Published |
20090024113 | MULTI-RESERVOIR MEDICAL DEVICE HAVING PROTECTED INTERIOR WALLS - An implantable medical device is provided for controlled delivery or exposure of reservoir contents. The device may include a substrate; a plurality of discrete reservoirs in the substrate, wherein the reservoirs have interior walls and at least one opening in the substrate; reservoir contents disposed in the reservoirs; a reservoir cap closing the at least one opening of each of the reservoirs to seal the reservoir contents in each of the reservoirs; and control circuitry for selectively disintegrating the reservoir caps to release or expose the reservoir contents in vivo, wherein the interior walls of the reservoirs comprise a material to protect the substrate in vivo. For example, to enhance the resistance of the substrate to etching in vivo, the interior sidewalls of the reservoirs may include a protective coating (such as gold, platinum, carbon, silicon carbide, silicon dioxide, or platinum silicide), or the sidewalls may include a doped silicon. | 01-22-2009 |
20100042075 | MULTI-OPENING RESERVOIR DEVICES FOR CONTROLLED RELEASE OR EXPOSURE OF RESERVOIR CONTENTS - Devices, such as medical devices, are provided which include a body portion having at least one reservoir which has two or more openings, the two or more openings being defined in part by a reservoir cap support; reservoir contents, such as a drug formulation or sensor, disposed inside the reservoir; and a reservoir cap which closes off the two or more reservoir openings. The reservoir cap, which can be ruptured, controls release or exposure of the reservoir contents. In one embodiment, the device is an implantable medical device and provides for the controlled release of drug or exposure of a sensor. | 02-18-2010 |