Patent application number | Description | Published |
20080237997 | METAL GASKET - The present invention provides a metal gasket to be fitted between a cylinder head and a cylinder block to seal a gap between the surfaces thereof, which comprises: a thin metal plate with an opening formed at a position corresponding to a bore portion of the cylinder block, the opening having a diameter larger than that of the bore portion; and a pair of elastic metal substrates each having: an opening which substantially agrees with the bore portion of the cylinder block; an annular convex portion formed concentrically with the opening at a position apart from an edge portion of the opening by a specified distance; and an annular holding portion for holding a peripheral portion of the opening of the thin metal plate, horizontally extending out from an outer edge portion of the convex portion, wherein the pair of the elastic metal substrates are disposed so that top portions of the respective convex portions face each other and that the holding portions overlap with the thin metal plate, and engaged to the thin metal plate at a plurality of positions. | 10-02-2008 |
20090239324 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SEPARABLE SUPPORT BODY - In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer. | 09-24-2009 |
20090280389 | Fuel Cell Separator and Manufacturing Method Thereof - This invention provides a low cost fuel cell separator which reduces a contact resistance between a gas diffusion layer and the separator, has the capability of saving thickness as well as erosion resistance and mechanical strength. It is a feature of this invention that when the fuel cell separator has “chases A” | 11-12-2009 |
20090289717 | RADIO FREQUENCY (RF) POWER AMPLIFIER AND RF POWER AMPLIFIER APPARATUS - An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification. | 11-26-2009 |
20090316262 | TRANSMISSION TYPE POLARIZING ELEMENT, AND COMPOSITE POLARIZING PLATE USING THE ELEMENT - A transmission type polarizing element | 12-24-2009 |
20100059781 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME - In an exemplary embodiment of the invention, a semiconductor light-emitting element includes a first semiconductor layer having a first conduction type, a second semiconductor layer having a second conduction type, an active layer provided between the first and second semiconductor layers. The semiconductor light-emitting element also includes a polarity inversion layer provided on the second semiconductor layer, and a third semiconductor layer provided on the polarity inversion layer. The third semiconductor layer has the second conduction type. The crystal orientations of the first through third semiconductor layers are inverted, with the polarity inversion layer serving as a boundary. The first and third semiconductor layers have uppermost surfaces that are made from polar faces having common constitutional elements. Hexagonal conical protrusions arising from a crystal structure are formed at the outermost surfaces of the first and third semiconductor layers. The first through third semiconductor layers are made from a wurtzite-structure group III nitride semiconductor, and are layered along the C-axis direction of the crystal structure. In another embodiment, the polar faces may be made from nitrogen atoms. The hexagonal conical protrusions may be formed by wet etching. | 03-11-2010 |
20100090767 | RF AMPLIFICATION DEVICE - An RF amplification device has amplification elements which amplify a radio frequency input signal in wireless radio communication. Transmission line transformers are coupled to one of an input electrode and an output electrode of the amplification elements and have a main line Lout arranged between the input and the output, and a sub line Lin | 04-15-2010 |
20100102887 | ELECTRONIC COMPONENT FOR HIGH FREQUENCY POWER AMPLIFICATION - An electronic component for high frequency power amplification realizes an improvement in switching spectrum characteristics. The gain of an amplifying NMOS transistor is controlled by a bias voltage on which a bias control voltage is reflected. Further, a threshold voltage compensator compensates for a variation in threshold voltage with variations in the manufacture of the amplifying NMOS transistor. The threshold voltage compensator includes an NMOS transistor formed in the same process specification as the amplifying NMOS transistor and converts a variation in current flowing through the NMOS transistor depending on the variation in the threshold voltage of the amplifying NMOS transistor to its corresponding voltage by a resistor to compensate for the bias voltage. It is thus possible to reduce variations in so-called precharge level brought to fixed output power in a region (0 dBm or less, for example) low in output power. | 04-29-2010 |
20100117115 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from the layered structure to expose the first layer; performing wet etching on an exposed surface to form defect depressions; forming an insulating layer on the exposed surface; polishing the insulating layer and the first layer to flatten the surface of the first layer; and performing wet etching on the surface of the first layer to form protrusions deriving from a crystal structure. | 05-13-2010 |
20100120036 | METHOD FOR AMPLIFYING DNA FRAGMENT - To measure the methylation degree of a genomic DNA simply and correctly as well as exhaustively, there is provided a method for amplifying a DNA fragment, characterized by comprising the following steps (1) to (5):
| 05-13-2010 |
20100129538 | PROCESS FOR PRODUCING MAGNET - The invention provides a process for producing a magnet that not only allows satisfactory Br and HcJ values to be achieved but can also yield a magnet with a sufficiently large squareness ratio. The process for producing a magnet according to the invention is characterized by comprising a first step in which a heavy rare earth compound containing a heavy rare earth element is adhered onto a rare earth magnet sintered compact, and a second step in which the heavy rare earth compound-adhered sintered compact is subjected to heat treatment. The heavy rare earth compound is a hydride of the heavy rare earth element. | 05-27-2010 |
20100201447 | Radio-frequency circuit - A radio-frequency circuit comprises a low-noise amplifier, an NMOS mixer for converting a radio-frequency signal output from the low-noise amplifier into an intermediate-frequency signal, a polyphase filter for removing image noises, and a PMOS mixer for converting the intermediate-frequency signal passed through the polyphase filter into a baseband signal. | 08-12-2010 |
20100301935 | BIAS CIRCUIT, HIGH-POWER AMPLIFIER, AND PORTABLE INFORMATION TERMINAL - To provide a bias circuit for gain control that can reduce gain variation at low-power output, facilitate setting of output power, and is unlikely to be affected by variation in element values and variations among products. Use in an HPA having three bias circuits serially-connected is assumed. Current of the third bias circuit is varied with a square-law characteristic. The square-law characteristic is amplified by a buffer amplifier including a linear amplifier and a peripheral circuit thereof. Output current of the third bias circuit varies depending on a current drivability coefficient of the diode-connected FET branched from the connection point between a constant current source and the linear amplifier. The output current of the third bias circuit is controlled by providing a circuit that draws a certain amount of current from the current flowing in the FET. | 12-02-2010 |
20110016191 | E-MAIL RECEIVING DEVICE, NETWORK SERVER, AND EXPIRATION MANAGEMENT METHOD FOR RECEIVED E-MAIL - A mail receiver includes: a mail receiving unit that receives a mail to which an attached file and a reference time limit of the attached file are appended; a monitoring unit that monitors whether the attached file was referred to by a user; and a warning unit that warns the user of one which the reference time limit is approaching among a non-referenced attached file. | 01-20-2011 |
20110062484 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer; and a light-transmissive electrode covering the second semiconductor layer and the second electrode, wherein contact between the second electrode and the second semiconductor layer is non-ohmic, and the second electrode has a stacked structure including a lower layer and an upper layer whose contact resistance with the light-transmissive electrode is lower than that of the lower layer, part of the second electrode being exposed through an opening formed in the light-transmissive electrode. | 03-17-2011 |
20110095827 | RADIO FREQUENCY (RF) POWER AMPLIFIER AND RF POWER AMPLIFIER APPARATUS - An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification. | 04-28-2011 |
20110156087 | FACE-UP OPTICAL SEMICONDUCTOR DEVICE AND METHOD - A face-up optical semiconductor device can be prepared by forming an n-type GaN layer, an active layer, and a p-type GaN layer on a C-plane sapphire substrate. Parts of the p-type GaN layer and the active layer can be removed, and a transparent electrode can be formed over all or most of the remaining p-type GaN layer. A p-side electrode including a pad portion and auxiliary electrode portions can be formed on the transparent electrode layer. An n-side electrode can be formed on the exposed n-type GaN layer. On regions of the transparent electrode layer where weak light emission regions may be formed, outside independent electrodes can be provided. They can be disposed on concentric circles with the n-side electrode as a center or tangent lines thereof so as to be along the circles or the tangent lines. The outside independent electrodes can diffuse current from the p-side electrode to the n-side electrode flowing through the transparent electrode layer into the short side end portions of the transparent electrode layer, thereby decreasing the weak light emission regions. | 06-30-2011 |
20110226513 | ELECTRONIC COMPONENT PACKAGE AND METHOD FOR PRODUCING ELECTRONIC COMPONENT PACKAGE - Disclosed is an electronic component package | 09-22-2011 |
20120061642 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting device which includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The semiconductor light emitting device comprises a first transparent electrode made of metal oxide transparent conductor provided on a surface of the p-type semiconductor layer; a second transparent electrode made of a metal oxide transparent conductor provided on the surface of the p-type semiconductor layer and electrically connected to the first transparent electrode; and a p-side electrode pad made of metal provided on a surface of the second transparent electrode. The second transparent electrode is higher in contact resistance with the p-type semiconductor layer than the first transparent electrode. | 03-15-2012 |
20120139388 | RARE EARTH SINTERED MAGNET AND MOTOR - In the rare earth sintered magnet, the ratio of R2 to the sum of R1 and R2 that are contained in crystal grain boundaries surrounding the crystal grains in the rare earth sintered magnet body is higher than the ratio of R2 to the sum of R1 and R2 in the crystal grains, and the concentration of R2 increases from the central portion of the rare earth sintered magnet body toward the surface of the rare earth sintered magnet body. In addition, the degree of unevenness in residual magnetic flux density on the surface of the rare earth sintered magnet body is smaller than 3.0%. | 06-07-2012 |
20120146086 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode. | 06-14-2012 |
20120205705 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A vertical semiconductor light emitting device which can alleviate a concentration of current inside a semiconductor film without impairing the electrical connection between an ohmic electrode and the semiconductor film. The semiconductor light emitting device includes the semiconductor film in contact with a support; a first electrode for partially covering the surface of the semiconductor film opposite to the contact surface with the support; and a second electrode provided on the contact surface side of the semiconductor film with the support. The second electrode includes first and second transparent electrodes made of the mutually same metal oxide transparent electrical conductor and electrically connected to each other, and the second transparent electrode is located to be opposed to the first electrode with the semiconductor film interposed therebetween and has a higher contact resistance with the semiconductor film than the first transparent electrode does. | 08-16-2012 |
20120320174 | ELECTRONIC ENDOSCOPIC APPARATUS - A CMOS sensor converts optical information into an electric signal, and outputs the converted electric signal as an image signal. An imaging clock generating unit generates an imaging clock acting as a source of a drive signal that drives the CMOS sensor. A drive signal generating unit generates an imaging synchronization signal and a drive signal based on the imaging clock. A display clock generating unit generates a display clock. A display synchronization signal generating unit generates a display synchronization signal based on the display clock. A phase comparing unit compares a phase of the imaging synchronization signal with a phase of the display clock, and controls oscillation of the display clock generating unit based on a result of the comparison. | 12-20-2012 |
20120320175 | ELECTRONIC ENDOSCOPIC APPARATUS - A phase control unit compares a phase of a display synchronization signal with a phase of a clock signal generated from a clock signal generated by an imaging clock generating unit, and controls oscillation of the imaging clock generating unit based on a result of the comparison. A drive signal generating unit generates a drive signal that drives a CMOS sensor based on a multiplication clock signal synchronized to the clock signal. | 12-20-2012 |
20120320176 | ELECTRONIC ENDOSCOPE APPARATUS - The image processor includes a display oscillation circuit that generates a display clock, and a monitor synchronization signal generating part that generates a monitor display synchronization signal based on the display clock. The endoscope includes an imaging oscillation circuit that generates an imaging clock, pixels that are driven based on the imaging clock, converts optical information into electrical signals and outputs the electrical signals as a digital data of a serial form, and a phase comparator that compare the phase of the monitor display synchronization signal with the imaging clock, and control the oscillation of the imaging oscillation circuit. | 12-20-2012 |
20120320177 | ELECTRONIC ENDOSCOPE APPARATUS - A phase comparing unit compares a phase of an imaging-side synchronization signal with a phase of a display-side clock, and controls oscillation of a display-side clock generating unit based on a result of the comparison. A display timing adjusting unit receives a video signal output from an endoscope at a timing based on the imaging-side synchronization signal and adjusts a synchronization timing of the received video signal to a synchronization timing based on a display-side synchronization signal. | 12-20-2012 |
20120323073 | ELECTRONIC ENDOSCOPIC APPARATUS - An imaging device is installed on a scope distal portion, and captures an image based on an imaging clock. An image processor portion performs image processing on the image captured by the imaging device, and displays the corresponding image based on a display clock on a monitor. A scope cable portion transmits data between the scope distal portion and the image processor portion. A clock oscillator generates a master clock. A first multiplying/dividing circuit multiplies and/or divides the master clock by (natural number/natural number), and generates a transmission clock whose frequency is lower than that of the imaging clock and is (natural number) times the frequency of a vertical synchronization signal. | 12-20-2012 |
20130016199 | ELECTRONIC ENDSCOPIC APPARATUSAANM Kobayashi; NaruyasuAACI Kawasaki-shiAACO JPAAGP Kobayashi; Naruyasu Kawasaki-shi JPAANM Kotoda; KaoruAACI TokyoAACO JPAAGP Kotoda; Kaoru Tokyo JPAANM Nishimura; HisashiAACI TokyoAACO JPAAGP Nishimura; Hisashi Tokyo JPAANM Azuma; MotooAACI Tokorozawa-shiAACO JPAAGP Azuma; Motoo Tokorozawa-shi JPAANM Takizawa; KazuhiroAACI TokyoAACO JPAAGP Takizawa; Kazuhiro Tokyo JPAANM Sato; TakayukiAACI TokyoAACO JPAAGP Sato; Takayuki Tokyo JPAANM Tanaka; SatoshiAACI TokyoAACO JPAAGP Tanaka; Satoshi Tokyo JP - An electronic endoscopic apparatus includes an endoscopic scope and an image processing processor. The endoscopic scope includes a slid-state imaging device, an imaging-side multiplying unit, and an imaging synchronization signal generating unit. The image processing processor includes a display clock generating unit, a monitor synchronization signal generating unit, a master imaging clock generating unit, a processor-side multiplying/dividing unit, a phase-comparison oscillation control unit, and a display timing adjustment unit. | 01-17-2013 |
20130036319 | IMAGE PROCESSING APPARATUS AND CONTROL METHOD FOR IMAGE PROCESSING APPARATUS - An image processing apparatus includes a first control unit configured to control the whole apparatus and not to be energized in a power saving mode; and a second control unit configured to be energized in the power saving mode. The second control unit includes a detecting unit configured to detect a return trigger for returning from the power saving mode to a normal mode; an identifying unit configured to identify the return trigger; a storage unit configured to store the identified return trigger into a storage medium; and a starting unit configured to start energizing the first control unit in accordance with the detection of the return trigger. The first control unit includes a reading unit configured to read the stored return trigger after the first control unit is energized; and a first-control-unit control unit configured to determine a function to be activated preferentially based on the return trigger. | 02-07-2013 |
20130214603 | ELECTRONIC DEVICE, IMAGE PROCESSING APPARATUS, AND DEVICE CONTROL METHOD - An electronic device includes a detecting unit configured to detect cut-off of a main power supply; a power storage unit configured to store power; a sensing unit configured to sense an amount of remaining power of the power storage unit; a determining unit configured to determine whether a functional operation designated by a user is completed with the amount of remaining power sensed by the sensing unit in a cut-off condition of the main power supply detected by the detecting unit; and an operation control unit configured to control execution of the functional operation in the cut-off condition when the determining unit determines that the functional operation is completed with the amount of remaining power. | 08-22-2013 |
20130278739 | VIDEO SIGNAL PROCESSING APPARATUS FOR ENDOSCOPE - A processor includes: a data transmission/reception section that reads parameter data unique to a scope from a ROM provided in the scope; a register communication state determination section that determines whether or not the parameter data read from the data transmission/reception section has an error; and a mute control/color bar control section that if a result of the determination by the register communication state determination section indicates that the parameter data has an error, controls an image processing section according to a type of the parameter data having the error. | 10-24-2013 |
20140101433 | INFORMATION PROCESSING APPARATUS - In the invention, a first processor that controls operation of a predetermined controlled unit and a second processor are operated in a first mode, a second mode, and a third mode, in the first mode the first processor and second processor are operable respectively, in the second mode respective amounts of power supplied to the first and second processors are lower than that in the first mode, in the third mode respective amounts of power supplied to the first and second processors are an amount between that in the first mode and that in the second mode and at least the predetermined controlled unit is operable, and in the second mode, the first processor puts a process related to the first processor before a process related to the second processor until the second mode is transited to the third mode. | 04-10-2014 |
20140198249 | CONTROL APPARATUS AND IMAGING SYSTEM - A control apparatus includes a control unit configured to control a cycle from a first irradiation start timing to a second irradiation start timing to be shorter than a cycle of each of first and second picture periods. The first irradiation start timing is a timing at which a light source device starts radiating pulsed illumination light in the first picture period in which an image pickup device performs reading. The second irradiation start timing is a timing at which the light source device starts radiating the illumination light in the second picture period succeeding the first picture period and having the same cycle as the first picture period. | 07-17-2014 |
20140335268 | RARE EARTH SINTERED MAGNET, METHOD FOR PRODUCING SAME, MOTOR AND AUTOMOBILE - A rare earth sintered magnet | 11-13-2014 |
20150084082 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element includes: an ohmic electrode layer formed on a surface of a semiconductor structure layer including a light-emitting layer; a reflective metal layer containing Ag formed so as to cover at least ends of the ohmic electrode layer; and a covering electrode layer formed so as to bury the reflective metal layer. | 03-26-2015 |