Patent application number | Description | Published |
20090242393 | Nonmagnetic Material Particle Dispersed Ferromagnetic Material Sputtering Target - Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer. | 10-01-2009 |
20110114481 | Lanthanum Oxide-based Sintered Compact, Sputtering Target Composed of said Sintered Compact, Method of Producing Lanthanum Oxide-based Sintered Compact, and Method of Producing Sputtering Target based on said Production Method - A lanthanum oxide-based sintered compact having lanthanum oxide as a basic component, wherein the sintered compact contains one or more of titanium oxide, zirconium oxide and hafnium oxide with the remainder being lanthanum oxide and unavoidable impurities. A method of producing a lanthanum oxide-based sintered compact, wherein La | 05-19-2011 |
20110114482 | Oxide Sintered Compact, Sputtering Target Composed of the Sintered Compact, and Method of Producing the Sintered Compact and the Sintered Compact Sputtering Target - An oxide sintered compact composed of a composite oxide of lanthanum and hafnium, wherein the amount of hafnium contained in the sintered compact is equivalent or more relative to the lanthanum. A method of producing an oxide sintered compact of lanthanum and hafnium, wherein La | 05-19-2011 |
20110114879 | Method of Producing Mixed Powder Comprising Noble Metal Powder and Oxide Powder, and Mixed Powder Comprising Noble Metal Powder and Oxide Powder - Provided are a method of producing mixed powder comprising noble metal powder and oxide powder, wherein powder of ammonium chloride salt of noble metal and oxide powder are mixed, the mixed powder is subsequently roasted, and ammonium chloride is desorbed by the roasting process in order to obtain mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder, wherein chlorine is less than 1000 ppm, nitrogen is less than 1000 ppm, 90% or more of the grain size of the noble metal powder is 20 μm or less, and 90% or more of the grain size of the oxide powder is 12 μm or less. Redundant processes in the production of noble metal powder are eliminated, and processes are omitted so that the inclusion of chlorine contained in the royal water and nitrogen responsible for hydrazine reduction reaction is eliminated as much as possible. Consequently, the present invention aims to omit the drying process at a high temperature and thereby prevent grain growth and aggregation, and further eliminate the pulverization and classification processes in order to considerably reduce the production cost. | 05-19-2011 |
20110123795 | Hybrid Silicon Wafer and Method for Manufacturing Same - Provided is a hybrid silicon wafer comprising a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer. Also provided is a method for manufacturing a hybrid silicon wafer having a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer, wherein a part of the sintered polysilicon is hollowed, a single crystal ingot is inserted into the hollowed portion, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon and the single-crystal silicon ingot, and the complex is sliced. Thereby provided are a hybrid silicon wafer comprising functions of both the polysilicon wafer and the single-crystal wafer, and a method for manufacturing such a hybrid silicon wafer. | 05-26-2011 |
20110162322 | Method for Storing Target Comprising Rare Earth Metal or Oxide Thereof - Provided is a method for storing a target comprising a rare earth metal or oxide thereof, wherein oxide of the same rare earth metal as the material of the rare earth metal or its oxide target to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the target is stored by sealing the storage container or the film-type seal. This invention aims to provide technology for enabling the long-term storage of a target by devising the method for storing a target comprising a rare earth metal or oxide thereof, and thereby inhibiting the pulverization of the target caused by the oxidation and hydroxylation of such target due to the ingress of air. | 07-07-2011 |
20120045380 | Method of Storing Lanthanum Oxide Target, and Vacuum-Sealed Lanthanum Oxide Target - A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm | 02-23-2012 |
20130277214 | Method of Storing Metal Lanthanum Target, Vacuum-sealed Metal Lanthanum Target, and Thin Film Formed by Sputtering the Metal Lanthanum Target - A method of storing a metal lanthanum sputtering target, wherein a surface of a metal lanthanum target to be stored is processed so as to achieve a roughness Ra of 1 μm or less, a lanthanum fluoride coating is formed on the surface thereof, the metal lanthanum target to which the lanthanum fluoride coating was formed is subsequently charged in a vacuum pack with an oxygen transmission rate of 0.1 cm | 10-24-2013 |
20130313659 | Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component - The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700° C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component. | 11-28-2013 |
20140199203 | HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT - A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm | 07-17-2014 |
Patent application number | Description | Published |
20110249421 | Power Conversion Device - A power conversion device for a vehicle includes: a power module that includes a switching device and, upon operation of the switching device, converts DC power into AC power to be supplied to an electric machine for driving a vehicle; a capacitor module that includes a smoothing capacitor element, an input-side power source terminal for receiving DC power, and an output-side power source terminal for supplying DC power to the power module; and a noise removal capacitor for removing noise, wherein: the noise removal capacitor is built in the capacitor module, and the noise removal capacitor is electrically connected to the input-side power source terminal in a position where a distance between a connection position of the noise removal capacitor and the input-side power source terminal is less than a distance between a connection position of the noise removal capacitor and the output-side power source terminal of the capacitor module. | 10-13-2011 |
20110299265 | Power Module, Power Converter Device, and Electrically Powered Vehicle - A power module and a power converter device including the power module include: two base plates with their main surfaces facing each other; a semiconductor circuit unit disposed between the two base plates; a connecting member that is connected to the two base plates and forms a housing region in which the semiconductor circuit unit is housed; and an insulating member that is placed between the base plate and the semiconductor circuit unit and secures electrical insulation of the base plate and the semiconductor circuit unit. A rigidity or thickness of the connecting member is less than a rigidity or thickness of the base plate. | 12-08-2011 |
20120087095 | Power Module and Power Conversion Device - A power module according to the present invention includes: a semiconductor element for converting DC current to AC current by switching operation; an electrical wiring board to which the semiconductor element is electrically connected, with the semiconductor element being disposed upon one of its principal surfaces; an insulating resin layer provided on the other principal surface of the electrical wiring board; a first insulation layer that is disposed opposite from the electrical wiring board, separated by the insulating resin layer, and that is joined to the insulating resin layer; a second insulation layer that is disposed opposite from the insulating resin layer, separated by the first insulation layer, and that ensures electrical insulation of the semiconductor element; and a metallic heat dissipation member that is disposed opposite from the first insulation layer, separated by the second insulation layer, and that radiates heat generated by the semiconductor element via the electrical wiring board, the insulating resin layer, the first insulation layer, and the second insulation layer. | 04-12-2012 |
Patent application number | Description | Published |
20100225372 | DUTY CYCLE CORRECTION SYSTEMS AND METHODS - Duty cycle correction systems and methods of adjusting duty cycles are provided. One such duty cycle correction system includes a duty cycle adjustor and a variable delay line coupled to the output of the duty cycle adjustor. First and second phase detectors have first inputs coupled to the output of the duty cycle adjustor through an inverter and second inputs coupled to the output of the variable delay line. The phase detectors cause the delay line to align rising or falling edges of signals at the output of the delay line with rising or falling edges, respectively, of signals at the output of the inverter. The controller simultaneously causes the duty cycle adjustor to adjust the duty cycle of the output clock signal until the rising and falling edges of signals at the output of the delay line are aligned with rising and falling edges, respectively, of signals at the output of the inverter. | 09-09-2010 |
20110204948 | DUTY CYCLE CORRECTION SYSTEMS AND METHODS - Duty cycle correction systems and methods of adjusting duty cycles are provided. One such duty cycle correction system includes a duty cycle adjustor and a variable delay line coupled to the output of the duty cycle adjustor. First and second phase detectors have first inputs coupled to the output of the duty cycle adjustor through an inverter and second inputs coupled to the output of the variable delay line. The phase detectors cause the delay line to align rising or falling edges of signals at the output of the delay line with rising or falling edges, respectively, of signals at the output of the inverter. The controller simultaneously causes the duty cycle adjustor to adjust the duty cycle of the output clock signal until the rising and falling edges of signals at the output of the delay line are aligned with rising and falling edges, respectively, of signals at the output of the inverter. | 08-25-2011 |
20120218015 | DUTY CYCLE CORRECTION SYSTEMS AND METHODS - Duty cycle correction systems and methods of adjusting duty cycles are provided. One such duty cycle correction system includes a duty cycle adjustor and a variable delay line coupled to the duty cycle adjustor. First and second phase detectors have first inputs coupled to the duty cycle adjustor through an inverter and second inputs coupled to the variable delay line. The phase detectors cause the delay line to align rising or falling edges of signals at the output of the delay line with rising or falling edges, respectively, of signals at the output of the inverter. The controller simultaneously causes the duty cycle adjustor to adjust the duty cycle of the output clock signal until the rising and falling edges of signals at the output of the delay line are aligned with rising and falling edges, respectively, of signals at the output of the inverter. | 08-30-2012 |
20130342254 | APPARATUSES AND METHODS FOR ADJUSTING A MINIMUM FORWARD PATH DELAY OF A SIGNAL PATH - Apparatuses and methods related to adjusting a minimum forward path delay of a signal path are disclosed. One such signal path includes a signal path having a minimum forward path delay, wherein the signal path is configured to adjust the minimum forward path delay based at least in part on a selected latency and a propagation delay of the minimum forward path delay. An example method includes reducing a forward path delay of a command path by at least one clock cycle of a clock signal to provide a command according to a selected latency responsive to a count value representative of a minimum forward path delay of the command path being greater than a maximum count value for the selected latency. | 12-26-2013 |