Sasajima, JP
Fumihiro Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20150076349 | CHARGED PARTICLE RADIATION APPARATUS - A charged particle radiation apparatus includes a control device that switches between a first charged particle beam and a second charged particle beam, the first charged particle beam being scanned to acquire an image and a waveform signal, the second charged particle beam being scanned over a sample before the scan of the first charged particle beam and used to charge the sample more than the first charged particle beam; wherein the control device is configured to acquire at least one of signal waveform data and image data about a pattern formed on the sample in accordance with a scan performed on the sample by the second charged particle beam, and to stop, when the acquired data has proved to be indicative of a predetermined state, the scan of the second charged particle beam. | 03-19-2015 |
Hideaki Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20090215943 | EPOXY RESIN COMPOSITION AND SEMICONDUCTOR DEVICE - There are provided an epoxy resin composition exhibiting less warpage after molding and during a solder treatment process as well as during a low temperature process of, for example, a temperature cycle test, and excellent in flame retardancy, solder crack resistance, and flowability; and a semiconductor device using the same. The epoxy resin composition used in the semiconductor device contains at least one type of epoxy resin (A) selected from a trifunctional epoxy resin and a tetrafunctional epoxy resin, a curing agent (B) having at least two hydroxyl groups per molecule, a compound (C) having at least two cyanate groups per molecule, and an inorganic filler (D), as essential components. | 08-27-2009 |
20130162063 | FIXING RESIN COMPOSITION FOR USE IN ROTOR - The fixing resin composition for use in a rotor includes a thermosetting resin (A) containing an epoxy resin, a curing agent (B), and an inorganic filler (C), wherein the content of the inorganic filler (C) is equal to or more than 50% by mass, based on 100% by mass of the total content of the fixing resin composition. | 06-27-2013 |
Hitoshi Sasajima, Hokkaido JP
Patent application number | Description | Published |
---|---|---|
20120071417 | METHODS OF INHIBITING CANCER CELL GROWTH WITH HDAC INHIBITORS AND METHODS OF SCREENING FOR HDAC10 INHIBITORS - Methods of inhibiting cancer cell growth using HDAC10 inhibitors are provided. Methods of treating cancer in a subject using HDAC10 inhibitors are also provided. In certain embodiments, at least one second inhibitor selected from an autophagy inhibitor, an AMPK inhibitor, and methyl pyruvate is also used in the methods. Dose packs comprising HDAC10 inhibitors and at least one second inhibitor are provided. Methods of identifying HDAC10 inhibitors are also provided. | 03-22-2012 |
Ikuyo Sasajima, Niigata JP
Patent application number | Description | Published |
---|---|---|
20110163864 | DISPLAY DEVICE FOR VEHICLE - To provide a display device for vehicle in which, when particular vehicle information, for example vehicle information with great urgency and high priority is displayed, a passenger can easily recognize the information and his attention can be attracted to the information. | 07-07-2011 |
Junpei Sasajima, Hokkaido JP
Patent application number | Description | Published |
---|---|---|
20120100610 | REVASCULARIZATION CELLS DERIVED FROM MONONUCLEAR CELLS, AND METHOD OF INDUCING DIFFERENTIATION THEREOF - The present invention relates to a method of safely and simply inducing differentiation of mononuclear cells into cells that promote neovascular stabilization and maturation, and lead to recovering from ischemia or tissue repair. The cells according to the present invention are obtained by inducing differentiation of a mononuclear cell by culturing the mononuclear cell in a medium (particularly a serum-free medium) containing one or more selected from vascular endothelial growth factor (VEGF), basic fibroblast growth factor (bFGF), thrombopoietin (TPO), granulocyte-colony stimulating factor (G-CSF) and FMS-like tyrosine kinase 3 ligand (FLT3L), and collecting a cell population expressing CD11 | 04-26-2012 |
Kei Sasajima, Saitama JP
Patent application number | Description | Published |
---|---|---|
20100176835 | TEST APPARATUS AND TRANSMISSION APPARATUS - A test apparatus for testing a device under test includes a test signal generating section that generates a test signal to be supplied to the device under test, a main driving section that outputs an output voltage determined in accordance with the test signal, to an input/output pin connected to a signal input/output terminal of the device under test, a replica driving section that outputs a comparison voltage determined in accordance with the test signal, a resistance voltage dividing section that generates a divided voltage by resistance-dividing the comparison voltage, a comparing section that compares a voltage of the input/output pin with the divided voltage, a judging section that judges acceptability of the device under test based on a result of the comparison by the comparing section, and an adjusting section that adjusts a voltage dividing ratio of the resistance voltage dividing section so that the divided voltage becomes equal to a voltage obtained by adding together a predetermined threshold voltage and a voltage of the input/output pin that is observed when the main driving section has output the output voltage and the signal input/output terminal of the device under test has not output a response signal. | 07-15-2010 |
Keisuke Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20120267207 | VIBRATION CONTROL APPARATUS, WIND TURBINE GENERATOR AND VIBRATION CONTROL METHOD - It is intended to provide a vibration control apparatus that can be installed in a small pace and can be produced at low cost, as well as a wind turbine generator equipped with the vibration control apparatus and a vibration control method. The vibration control apparatus | 10-25-2012 |
20140034269 | HEAT EXCHANGER, GAP EXPANSION JIG OF HEAT TRANSFER TUBE, AND METHOD OF DISPOSING VIBRATION SUPPRESSION MEMBER - The heat exchanger includes: a plurality of heat transfer tubes which is arranged and provided with predetermined gaps; and a plurality of second vibration suppression members | 02-06-2014 |
Kenta Sasajima, Yokohama-Shi JP
Patent application number | Description | Published |
---|---|---|
20130145856 | PRESSURE-SENSITIVE SENSOR, AND GRIP APPARATUS AND ROBOT MANIPULATOR EQUIPPED WITH THE SAME - A pressure-sensitive conductive rubber for reference is provided inside a housing in such a state that preload is imposed thereon. A pressure-sensitive conductive rubber for detection is also provided inside the housing in such a state that preload is imposed thereon and an external load acts thereon. A load detecting circuit applies voltage to the pressure-sensitive conductive rubbers to determine the external load based on a difference between a detected value corresponding to electric current flowing through the pressure-sensitive conductive rubber for reference and a detected value corresponding to electric current flowing through the pressure-sensitive conductive rubber for detection. | 06-13-2013 |
Koji Sasajima, Saitama JP
Patent application number | Description | Published |
---|---|---|
20080236934 | Electric Power Steering Apparatus - When a current input to a step-up voltage device of an electric power steering apparatus is equal to or higher than a first threshold current and an input voltage applied to the step-up voltage device is lower than a first threshold voltage, the step-up voltage device of the electric power steering apparatus discontinuously switches an output voltage to a voltage lower than a rated step-up voltage. When the input voltage becomes lower than a second threshold voltage which is lower than the first threshold voltage, the step-up voltage device sets the output voltage to a voltage equal to the input voltage. | 10-02-2008 |
Kouji Sasajima, Yokohama City JP
Patent application number | Description | Published |
---|---|---|
20120056381 | GAME APPARATUS - A game apparatus includes a prize support section that supports a prize, a prize moving section that moves the prize supported by the prize support section by making a movement and a motion, a prize outlet that allows a player to remove the prize, and a prize guiding space that guides the prize toward the prize outlet. The game apparatus further includes a control section that controls the movement and the motion of the prize moving section based on operation information, and controls a motion force of the prize moving section based on motion force information, and a motion force change section that changes the motion force information based on a position of the prize moving section. | 03-08-2012 |
Manabu Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20150365561 | IMAGE FORMING APPARATUS AND METHOD FOR CONTROLLING THE SAME - An image forming apparatus is provided. The image forming apparatus may include an image forming unit to print data, a body portion disposed in the image forming unit, a display unit disposed on the body portion to be spaced apart from the body portion at a predetermined interval, and a scan unit disposed below the display unit, and a scan space is formed between the image forming unit and the display unit. | 12-17-2015 |
Masahiro Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20160086766 | Charged Particle Beam Device - An evacuation structure of a charged particle beam device includes: a vacuum chamber provided with a charged particle source; vacuum piping connected to the vacuum chamber; a main vacuum pump which is connected via the vacuum piping and evacuates the inside of the vacuum chamber; a non-evaporable getter pump disposed at a position between the vacuum chamber and the main vacuum pump in the vacuum piping; and a coarse evacuation port connected at a position between the vacuum chamber and the non-evaporable getter pump in the vacuum piping The coarse evacuation port includes: a coarse evacuation valve that opens and closes the coarse evacuation port; and a leak valve to open the vacuum chamber to the atmosphere. | 03-24-2016 |
Michiyo Sasajima, Haga-Gun JP
Patent application number | Description | Published |
---|---|---|
20110130456 | Hair Growth Regulating Agent - A hair growth regulating agent containing, as an active ingredient, a compound represented by the following formula (I): [wherein R1 represents a substituted or unsubstituted, linear or branched C2 to C25 alkyl group; a group represented by the following formula (II): (wherein R1′ represents a substituted or unsubstituted, linear or branched C2 to C20 alkylene group, or —(CH2)n-{O—(CH2)m}o-O—(CH2)p- in which each of n, m, o, and p is an integer from 1 to 6; X′ represents —CO—NH—, —O—CO—O—, —NH—CO—, —CO—O—, —O—CO—, or —O—; Y′ represents a substituted or unsubstituted C1 to C4 alkylene group; R2′ represents a hydrogen atom or a C1 to C4 alkyl group; R3′ represents a C1 to C4 alkyl group; and when R2′ and R3′ each represent a C1 to C4 alkyl group, the two alkyl groups may be identical to or different from each other); or a group represented by the following formula (III): (wherein R1′, X′, and Y′ have the same meanings as defined above; R4′, R5′, and R6′, which may be identical to or different from one another, each represent a C1 to C4 alkyl group; and A′- represents a counter ion); X represents —CO—NH—, —O—CO—O—, —NH—CO—, —CO—O—, —O—CO—, or —O—; Y represents a substituted or unsubstituted C1 to C4 alkylene group; R2 represents a hydrogen atom or a C1 to C4 alkyl group; R3 represents a C1 to C4 alkyl group; and when R2 and R3 each represent a C1 to C4 alkyl group, the two alkyl groups may be identical to or different from each other] or a salt of the compound; and/or a quaternary ammonium salt represented by the following formula (IV): (wherein R1, X, and Y have the same meanings as defined above; R4, R5, and R6, which may be identical to or different from one another, each represent a C1 to C4 alkyl group; and A- represents a counter ion). | 06-02-2011 |
20120087995 | NFAT Signal Inhibitor and Calcineurin Inhibitor - To provide a drug, an external use composition, and a cosmetic composition, which exhibit an NFAT signal inhibitory action, a calcineurin inhibitory action, and a hair growth-promoting effect. | 04-12-2012 |
20130260457 | NFAT Signal Inhibitor and Calcineurin Inhibitor - To provide a drug, an external use composition, and a cosmetic composition, which exhibit an NFAT signal inhibitory action, a calcineurin inhibitory action, and a hair growth promoting effect. | 10-03-2013 |
Michiyo Sasajima, Tochigi JP
Patent application number | Description | Published |
---|---|---|
20080206806 | Method for Evaluating or Screening Hair Growth-Regulating Agent - The present invention provides a method for evaluating or screening a hair growth-regulating agent which utilizes a readily available animal. | 08-28-2008 |
Munehiko Sasajima, Yokohama-Shi JP
Patent application number | Description | Published |
---|---|---|
20090040378 | INFORMATION DISPLAY APPARATUS, INFORMATION DISPLAY METHOD AND PROGRAM THEREFOR - An information display apparatus includes a display device configured to display a video, a speech detection unit configured to detect a playback state of a playback speech, a closed caption display unit configured to generate character information associated with the playback speech and display it on the display device together with the video, and a closed caption display unit configured to carry out a changing control for changing according to the detected playback state a display state of the character information that is displayed on the display device by the closed caption display unit. | 02-12-2009 |
20090074378 | CLOSED CAPTION CONTROL APPARATUS AND METHOD THEREFOR - A closed caption display controller to control a display mode of a closed caption corresponding to a speech of an audio signal, the controller comprises an analysis unit to analyze the speech on a speech quality, an examination unit configured to examine a speech listening level according to a given rule based on an analysis result of the analysis unit, and a determination unit to determine a display mode according to an examination result of the examination unit. | 03-19-2009 |
Ryota Sasajima, Toyama-Shi JP
Patent application number | Description | Published |
---|---|---|
20090016854 | Heat-treating apparatus and method of producing substrates - A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold. | 01-15-2009 |
20090111285 | Substrate treatment apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device - [Problem] To provide a substrate treatment apparatus capable of performing temperature control in a reaction tube with accuracy. | 04-30-2009 |
20100029092 | Semiconductor Device Producing Method, Substrate Producing Method and Substrate Processing Apparatus - A method is provided with a step of supplying a reacting furnace ( | 02-04-2010 |
20110076857 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing a predetermined element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel. | 03-31-2011 |
20120045905 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel. | 02-23-2012 |
20120064733 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device, including: forming a silicon oxide film on a surface of a substrate holder by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer; forming a thin film on a substrate by using a process gas; removing deposits attached onto the substrate holder by using a fluorine-containing gas; and reforming a silicon oxide film on the surface of the substrate holder after removal of the deposits by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer by using an oxygen-containing gas and a hydrogen-containing gas. | 03-15-2012 |
20120280369 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively. | 11-08-2012 |
20130273748 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device is provided, including: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas into the processing vessel; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas and an inert gas into the processing vessel, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the nitride layer to the oxynitride layer. | 10-17-2013 |
20140051260 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed. | 02-20-2014 |
20140080314 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate. | 03-20-2014 |
20140080319 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a predetermined element-containing gas to the substrate; supplying a carbon-containing gas and a plasma-excited inert gas to the substrate; supplying an oxidizing gas to the substrate; and supplying a nitriding gas to the substrate. | 03-20-2014 |
20140220787 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed. | 08-07-2014 |
20150126043 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed. | 05-07-2015 |
20150262809 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate. | 09-17-2015 |
20150267296 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part. | 09-24-2015 |
20150376781 | CLEANING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - There is provided a cleaning method including cleaning an interior of a process chamber in which a substrate is processed, by supplying a cleaning gas into the process chamber and exhausting the cleaning gas from the process chamber via an exhaust pipe; and cooling the exhaust pipe by maintaining a state where distribution of the cleaning gas into the exhaust pipe is substantially stopped. Also, the act of cleaning the interior of the process chamber and the act of cooling the exhaust pipe are repeated alternately. | 12-31-2015 |
20160097126 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas. | 04-07-2016 |
Ryota Sasajima, Toyama JP
Patent application number | Description | Published |
---|---|---|
20110130011 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel. | 06-02-2011 |
20110256733 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined number of times, wherein the cycle includes steps of: (a) performing a set of steps a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate; and (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer, wherein the set of steps includes: (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate; (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon; and (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer. | 10-20-2011 |
20120184110 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein. | 07-19-2012 |
20130019804 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure. | 01-24-2013 |
20130072027 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - Provided is a method of manufacturing a semiconductor device having a structure in which an oxide film and a nitride film are stacked. The method includes forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing a first cycle and a second cycle a predetermined number of times, the first cycle comprising forming the oxide film by supplying a source gas, a nitriding gas and an oxidizing gas to the substrate in the processing container a predetermined number of times, and the second cycle comprising forming the nitride film by supplying the source gas and the nitriding gas to the substrate in the processing container a predetermined number of times, wherein the forming of the oxide film and the forming of the nitride film are consecutively performed while retaining a temperature of the substrate constant. | 03-21-2013 |
20130252439 | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium - A method includes: forming a thin film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a source gas to the substrate in a process chamber; and (b) supplying a reactive gas to the substrate in the process chamber, wherein at least one of (a) and (b) includes: (c) supplying the source gas or the reactive gas at a first flow rate with exhaust of an inside of the process chamber being suspended until an inner pressure of the process chamber reaches a predetermined pressure; and (d) supplying the source gas or the reactive gas at a second flow rate less than the first flow rate with exhaust of the inside of the process chamber being performed while maintaining the inner pressure of the process chamber at the predetermined pressure after the inner pressure of the process chamber reaches the predetermined pressure. | 09-26-2013 |
20140024225 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate. | 01-23-2014 |
20150101755 | SUBSTRATE PROCESSING APPARATUS - An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate. | 04-16-2015 |
20150214028 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel. | 07-30-2015 |
20150214042 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel. | 07-30-2015 |
Tadahiro Sasajima, Asahikawa-Shi JP
Patent application number | Description | Published |
---|---|---|
20090192452 | BLOOD FLOW BLOCKING CATHETER - A blood flow blocking catheter, comprises: a puncture needle component having a puncture needle capable of puncturing a vein; and a sheath that covers said puncture needle component, and a balloon catheter that can be inserted into and removed from a lumen of the puncture needle component and has at its distal end a balloon that can block off blood flow. With the present invention, a balloon catheter can be easily inserted into a vein, and the balloon inflated, without making a large incision in the vein. Therefore, the temporary obstruction of blood flow with a balloon catheter can be carried out more easily, and this simplifies the surgery and makes it less invasive. Thus, it is possible to obtain a blood flow blocking catheter with which vascular anastomosis can be performed more safely and in less time. | 07-30-2009 |
Takashi Sasajima, Shizuoka-Ken JP
Patent application number | Description | Published |
---|---|---|
20090188476 | WORKING-GAS-CIRCULATION-TYPE ENGINE - In an engine | 07-30-2009 |
Takashi Sasajima, Susono-Shi JP
Patent application number | Description | Published |
---|---|---|
20110278756 | SILICA STRUCTURE AND METHOD OF PRODUCING THE SAME, AND HEAT INSULATING MATERIAL - A silica structure includes mesoporous silica spheres; and connection portions each of which includes metal oxide, and each of which connects the mesoporous silica spheres to each other. | 11-17-2011 |
Takashi Sasajima, Sunntou-Gun JP
Patent application number | Description | Published |
---|---|---|
20120159936 | EXHAUST PIPE - An exhaust pipe through which an exhaust port of an internal combustion engine and a catalyst for purifying an exhaust gas of the internal combustion engine are connected to each other includes a porous portion that is provided on at least a part of an inner peripheral face of the exhaust pipe. A thermal conductivity that the porous portion exhibits in a high temperature state where a temperature of the exhaust gas is as high as it is required to radiate a heat of the exhaust gas through the exhaust pipe is at least ten times higher than a thermal conductivity that the porous portion exhibits in a low temperature state where the temperature of the exhaust gas is as low as it is required to warm the catalyst up. | 06-28-2012 |
Takeshi Sasajima, Wako-Shi JP
Patent application number | Description | Published |
---|---|---|
20090230697 | ENGINE-DRIVEN POWER GENERATOR - Engine-driven power generator includes: a power generation section having a drive shaft connected to a crankshaft; a gas-liquid separation unit provided upstream of the power generation section and having an air inlet port for taking in cooling air, the inlet port being disposed immediately under a fuel tank, the separation unit separating moisture from the taken-in air; and a cooling fan rotatable by the drive shaft to direct the taken-in air into the power generation section. | 09-17-2009 |
20110088256 | GAS CARTRIDGE LOADING MECHANISM - A gas cartridge loading mechanism has a sensor member movable toward a collar retaining portion and mounted to undergo pivotal movement between a locked position and an unlocked position, and a stopper configured to prevent movement of the sensor member when the sensor member is disposed in the locked position and to allow movement of the sensor member when the sensor member is disposed in the unlocked position. The sensor member is configured to move in the locked position when a gas cartridge is set with improper orientation, and to move in the unlocked position when the gas cartridge is set with proper orientation. | 04-21-2011 |
20130099088 | POSITION REGULATING APPARATUS FOR ENGINE OPERATING MACHINE - The present invention is directed to enable the shape of a bump stopper to be easily changed in accordance with a change in specifications, the bump stopper for performing position regulation so that, when an engine generator shakes, the generator body does not come off from an external frame. A position regulating apparatus has a generator body ( | 04-25-2013 |
Takeshi Sasajima, Saitama JP
Patent application number | Description | Published |
---|---|---|
20100274446 | VEHICULAR PARKING FEASIBILITY DETERMINING SYSTEM, VEHICULAR PARKING SPACE DETECTION SYSTEM AND VEHICULAR MOVABLE RANGE DETECTION SYSTEM - A radar device ( | 10-28-2010 |
20120004809 | SYSTEM FOR SELECTING AND DISPLAYING A PULLING OUT MODE OF A CAR FROM A CARPORT - A system for selecting and displaying a pulling out mode installed in a vehicle comprises a memory for preliminarily storing pulling out modes indicating manners of pulling a vehicle out of a parking space, corresponding to each of parking modes indicating manners of parking in the parking space, a unit that determines parking mode of the vehicle when the vehicle is placed in the parking space, a selection and display unit that selects a pulling out mode corresponding to the determined parking mode from the memory and displays the selected pulling out mode according to an instruction from a driver of the vehicle for pulling the vehicle out of the parking space after the vehicle is placed in the parking space. Not only when a vehicle is parked with automatic steering but also when the vehicle is parked with manual steering, a parking mode can be determined. Since only an appropriate pulling out mode is selected according to a parking mode, for example, a mistaken operation of selecting an inappropriate pulling out mode can be avoided when a pulling out is performed with an automatic steering. | 01-05-2012 |
Takeshi Sasajima, Utsunomiya-Shi JP
Patent application number | Description | Published |
---|---|---|
20100090880 | OBJECT DETECTING APPARATUS - An object detecting apparatus including: an object detecting device that causes electromagnetic waves to be reflected from an object and receives the reflected waves to detect the object while scanning a predetermined scan range; a rotating device that changes a direction of the object detecting device; an imaging device that captures images; a display device that displays an image captured by the imaging device; a setting device that sets the scan range of the object detecting device on the image displayed by the display device; and a control device that instructs the rotating device to rotate the object detecting device based on the set scan range, and instructs the object detecting device to scan the scan range. | 04-15-2010 |
Tatsuo Sasajima, Chiyoda-Ku JP
Patent application number | Description | Published |
---|---|---|
20130012651 | CONJUGATED DIENE RUBBER, RUBBER COMPOSITION, CROSSLINKED RUBBER, TIRE, AND PROCESS FOR PRODUCTION OF CONJUGATED DIENE RUBBER - For a tire excellent in strength, low-heat buildup property, wet grip property, and driveability, and a rubber composition and a conjugated diene rubber for the tire, a conjugated diene rubber of the present invention includes 5 wt % or more of a structure that 3 or more conjugated diene polymer chains are bound via a denaturing agent, obtained by reaction of each chain and the agent, each chain being that at least one of terminals is an isoprene block having 70 wt % or more of an isoprene monomer unit, and the other is an active terminal, the agent having, per molecule, at least one of an epoxy group(s) and a hydrocarbyloxysilyl group(s), and being that a total number of the epoxy group(s) and hydrocarbyloxy groups in the hydrocarbyloxysilyl group(s) per molecule is 3 or more. | 01-10-2013 |
Tatsuo Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20130267649 | CONJUGATED DIENE RUBBER, RUBBER COMPOSITION, CROSS-LINKED RUBBER, AND TIRE - A conjugated diene rubber of the present invention is prepared from conjugated diene polymer chains, wherein the conjugated diene polymer chains each has an active end at one end and an isoprene block at least at the other end, the isoprene block contains 70 wt % or more isoprene monomer units, and the active ends of at least part of the conjugated diene polymer chains are modified with a compound having a >C═O group as a functional group. This provides (i) a tire that has an excellent strength, excellent low-heat buildup property, and excellent wet grip property and (ii) a rubber composition and a conjugated diene rubber that are suitably used to produce the tire. | 10-10-2013 |
20150133600 | METHOD FOR PRODUCING CONJUGATED DIENE RUBBER - A method for producing a conjugated diene rubber is provided which includes the steps of: (a) forming a polymer block (A) by using a polymerization initiator in an inert solvent, the polymer block (A) having an active terminal and containing a specific amount of an isoprene monomeric unit and a specific amount of an aromatic vinyl monomeric unit; (b) forming a polymer block (B) having an active terminal and containing a specific amount of a 1,3-butadiene monomeric unit and, as needed, a specific amount of an aromatic vinyl monomeric unit, thereby obtaining a conjugated diene polymer chain having an active terminal and having the polymer block (A) and a polymer block (B); (c) bringing a specific amount of a predetermined denaturant into reaction with the active terminal of the conjugated diene polymer chain having the active terminal. | 05-14-2015 |
Tomoyoshi Sasajima, Fukuroi JP
Patent application number | Description | Published |
---|---|---|
20150030474 | AXIAL FLOW FAN - An axial flow fan of the present invention includes: an impeller having a hub and vanes disposed at equal intervals on an outer peripheral portion of the hub; a rotor shaft located at the center of the impeller; a motor portion rotating the impeller around the rotor shaft as an axis; a casing surrounding an outer periphery of the impeller; a base portion supporting the motor portion; and a stationary blade located in a blowout opening side of air flow, the stationary blade connecting the base portion and the casing, wherein the stationary blade has on its surface a guide portion allowing air flow flowing along the surface to be rectified and guided from a direction of the blowout opening to an outside. | 01-29-2015 |
Yasushi Sasajima, Hitachi JP
Patent application number | Description | Published |
---|---|---|
20120146220 | SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor integrated-circuit device using the copper wiring having increased electromigration resistance, low resistivity, and a line width of 70 nm or less, is provided. The present invention is characterized by the annealing treatment wherein a copper wiring having a line width of 70 nm or less is heated with a heating rate of 1 K to 10 K per second, and then the temperature is constantly maintained for a prescribed time duration. | 06-14-2012 |
20140308811 | SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor integrated-circuit device using the copper wiring having increased electromigration resistance, low resistivity, and a line width of 70 nm or less, is provided. The present invention is characterized by the annealing treatment wherein a copper wiring having a line width of 70 nm or less is heated with a heating rate of 1K to 10K per second, and then the temperature is constantly maintained for a prescribed time duration. | 10-16-2014 |
Youta Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20150136562 | PAPER-SLIP HANDLING DEVICE AND AUTOMATED TRANSACTION DEVICE - A paper-slip handling device with: a reduced stoppage rate and banknote rejection rate for a deposit/withdrawal device; improved ability to remove foreign material from banknote bundles; improved user-friendliness; and improved reliability, comprising: a deposit/withdrawal unit used for depositing and withdrawal of paper slips, a paper-slip identification unit that identifies paper slips, a temporary holding compartment that temporarily stores deposited paper slips, a plurality of paper-slip storage compartments, and a first paper-slip transport path via which paper slips are transported to the various aforementioned units. The deposit/withdrawal unit has an opening via which paper slips are transferred in a substantially horizontal state, a storage section that stores paper slips in a substantially upright state, and a second paper-slip transport path that connects said opening and storage section. The paper slips are transported via said second paper-slip transport path while being switched between the substantially upright state and substantially horizontal state. | 05-21-2015 |
Youta Sasajima, Owariasahi JP
Patent application number | Description | Published |
---|---|---|
20100213660 | PAPER SHEET HANDLING MACHINE - The paper sheet handling machine is provided. The paper sheet handling machine includes: a paper sheet slot configured to receive and provide a paper sheet; a pair of push plates configured to hold the paper sheet inserted into and discharged from the paper sheet handling machine via the paper sheet slot and apply a pressing force to the paper sheet in a thickness direction thereof; a pair of conveyor assemblies including a first conveyor assembly and a second conveyor assembly configured to hold and convey the paper sheet inserted and discharged via the paper sheet slot; and a moving mechanism configured to move the first conveyor assembly and the second conveyor assembly in mutually approaching directions or in mutually away directions and locate the first conveyor assembly and the second conveyor assembly at any position between inside and outside the pair of push plates, seen from the paper sheet slot. | 08-26-2010 |
Yui Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20130064456 | OBJECT CONTROL DEVICE, COMPUTER READABLE STORAGE MEDIUM STORING OBJECT CONTROL PROGRAM, AND OBJECT CONTROL METHOD - An object control device includes an object of interest specifying unit configured to specify an object of interest to obtain position information on the object of interest, an obstacle determining unit configured to determine whether there is an obstacle between the object of interest and the object, and a time measuring unit configured to measure a period after determining that there is the obstacle, and a holding unit configured to hold position information of the object of interest when the period reaches a predetermined period, and an object action control unit configured to control a direction of a part of the object, based on the position information obtained by the object of interest specifying unit before the period reaches the predetermined period, and based on the position information on the object of interest held in the holding unit after the period reaches the predetermined period. | 03-14-2013 |
Yuichi Sasajima, Takasaki-Shi, Gunma JP
Patent application number | Description | Published |
---|---|---|
20110193194 | THIN FILM MIM CAPACITORS AND MANUFACTURING METHOD THEREFOR - Proposed are thin film MIM capacitors with which deterioration of insulating properties and leakage current properties can be sufficiently inhibited. Also proposed is a manufacturing method for the thin film MIM capacitors. For the thin film MIM capacitor ( | 08-11-2011 |
Yuichi Sasajima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20120261801 | Wiring Board, Semiconductor Device, and Method for Manufacturing Wiring Board - A wiring board includes a silicon substrate with a through hole communicating with first and second substrate surfaces. A capacitor includes a capacitor part mounted on an insulating film covering the substrate first surface and including a first electrode on the insulating film, a first dielectric layer on the first electrode, and a second electrode on the first dielectric layer. A multilayer structure arranged on a wall surface defining the through hole includes the insulating film on the through hole wall surface, a first metal layer on the insulating film formed from the same material as the first electrode, a second dielectric layer on the first metal layer formed from the same material as the first dielectric layer, and a second metal layer on the second dielectric layer formed from the same material as the second electrode. The multilayer structure covers a penetration electrode in the through hole. | 10-18-2012 |
20120261832 | Wiring Board, Semiconductor Device, and Method for Manufacturing Wiring Board - A wiring board provided with a silicon substrate including a through hole that communicates a first surface and a second surface of the silicon substrate. A capacitor is formed on an insulating film, which is applied to the silicon substrate, on the first surface and a wall surface defining the through hole. A capacitor part of the capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially deposited on the insulating film on the first surface and the wall surface of the through hole. A penetration electrode is formed in the through hole covered by the first electrode, the dielectric layer, and the second electrode of the capacitor part. | 10-18-2012 |
20130094120 | THIN-FILM CAPACITOR - A thin-film capacitor | 04-18-2013 |
20130271238 | FILTER DEVICE, MANUFACTURING METHOD FOR FILTER DEVICE, AND DUPLEXER - A transmitting/receiving filter (filter device) according to one embodiment of the present invention is provided with a transmitting filter, a receiving filter, and a support substrate. The transmitting filter includes a first resonator constituted of a BAW device (FBAR, SMR). The receiving filter includes a second resonator constituted of a Lamb wave device. The support substrate supports both the transmitting filter and the receiving filter. The transmitting filter and the receiving filter are constituted of elastic wave resonators that resonate at different oscillation modes from each other, which allows miniaturization of the support substrate to be realized while preventing oscillation interference between the two filters. | 10-17-2013 |
Yuichi Sasajima, Gunma JP
Patent application number | Description | Published |
---|---|---|
20090146636 | SWITCHING ELEMENT, VARIABLE INDUCTOR, AND ELECTRONIC CIRCUIT DEVICE HAVING CIRCUIT CONFIGURATION INCORPORATING THE SWITCHING ELEMENT AND THE VARIABLE INDUCTOR - An inexpensive variable inductor has inductance value continuously changeable without reducing a Q value. When a control voltage is applied to a control terminal of a MOS transistor from a power supply, a continuity region is formed in a channel, and a region between main terminals becomes conductive. When the control voltage is changed, length of the continuity region in the channel is changed. This changes length of a path area of an induced current, flowing in an induced current film. Thus, the amount of induced current is increased or decreased. Therefore, when the control voltage of the MOS transistor is changed, the inductance value of the coil is continuously changed. | 06-11-2009 |
20120018842 | SWITCHING ELEMENT, VARIABLE INDUCTOR, AND ELECTRONIC CIRCUIT DEVICE HAVING CIRCUIT CONFIGURATION INCORPORATING THE SWITCHING ELEMENT AND THE VARIABLE INDUCTOR - An inexpensive variable inductor has inductance value continuously changeable without reducing a Q value. When a control voltage is applied to a control terminal of a MOS transistor from a power supply, a continuity region is formed in a channel, and a region between main terminals becomes conductive. When the control voltage is changed, length of the continuity region in the channel is changed. This changes length of a path area of an induced current, flowing in an induced current film. Thus, the amount of induced current is increased or decreased. Therefore, when the control voltage of the MOS transistor is changed, the inductance value of the coil is continuously changed. | 01-26-2012 |
Yuko Sasajima, Saitama JP
Patent application number | Description | Published |
---|---|---|
20100098820 | Fresh Cheese And Process For Producing The Same - The present invention provides fresh cheese that is significantly reduced in deterioration of taste or flavor and deterioration of texture and has excellent keeping quality, and a process for producing the same. | 04-22-2010 |