Patent application number | Description | Published |
20130045589 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A method of manufacturing a transistor of a semiconductor device, the method including forming a gate pattern on a semiconductor substrate, forming a spacer on a sidewall of the gate pattern, wet etching the semiconductor substrate to form a first recess in the semiconductor substrate, wherein the first recess is adjacent to the spacer, and wet etching the first recess to form a second recess in the semiconductor substrate. | 02-21-2013 |
20150041899 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a substrate including first and second regions, a first transistor provided on the first region to include a first channel region protruding from the substrate, and a second transistor provided on the second region to include a second channel region and a gate electrode extending between the substrate and the second channel region. The first channel region may include a lower semiconductor pattern containing a different material from the second channel region and an upper semiconductor pattern containing the same material as the second channel region. | 02-12-2015 |
20150084041 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A gate-all-around (GAA) semiconductor device can include a fin structure that includes alternatingly layered first and second semiconductor patterns. A source region can extend into the alternatingly layered first and second semiconductor patterns and a drain region can extend into the alternatingly layered first and second semiconductor patterns. A gate electrode can extend between the source region and the drain region and surround channel portions of the second semiconductor patterns between the source region and the drain region to define gaps between the source and drain regions. A semiconductor oxide can be on first side walls of the gap that face the source and drain regions and can be absent from at least one of second side walls of the gaps that face the second semiconductor patterns. A gate insulating layer can be on the first side walls of the gaps between the gate electrode and the semiconductor oxide. | 03-26-2015 |
20150137263 | SEMICONDUCTOR DEVICE HAVING FIN-TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer. | 05-21-2015 |
20150249087 | SEMICONDUCTOR FIN DEVICES AND METHOD OF FARICATING THE SEMICONDUCTOR FIN DEVICES - A semiconductor device includes a substrate, an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, and a channel-forming structure comprising crystalline semiconductor material. The channel-forming structure has a lower portion located in the trench and fins extending upright on the lower portion, where the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel forming structure has a higher crystal defect density than the fins of the channel forming structure. | 09-03-2015 |
20150311286 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device may include a strain relaxed buffer layer provided on a substrate to contain silicon germanium, a semiconductor pattern provided on the strain relaxed buffer layer to include a source region, a drain region, and a channel region connecting the source region with the drain region, and a gate electrode enclosing the channel region and extending between the substrate and the channel region. The source and drain regions may contain germanium at a concentration of 30 at % or higher. | 10-29-2015 |
20150311341 | SEMICONDUCTOR DEVICE HAVING FIN-TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate having a first region and a second region, a first MOS transistor including a first fin structure and a first gate electrode in the first region, the first fin structure having a first buffer pattern, a second buffer pattern, and a first channel pattern which are sequentially stacked on the substrate, and a second MOS transistor including a second fin structure and a second gate electrode in the second region, the second fin structure having a third buffer pattern and a second channel pattern which are sequentially stacked on the substrate. Related fabrication methods are also discussed. | 10-29-2015 |
20160086841 | METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FORMED USING THE SAME - A method for forming a pattern of a semiconductor device and a semiconductor device formed using the same are provided. The method includes forming a buffer layer on a substrate, forming a channel layer on the buffer layer, forming support patterns penetrating the channel layer, and forming channel fin patterns and a buffer pattern by patterning the channel layer and the buffer layer. The channel layer includes a material of which a lattice constant is different from that of the buffer layer, and each of the channel fin patterns has both sidewalls that are in contact with the support patterns and are opposite to each other. | 03-24-2016 |