Patent application number | Description | Published |
20080261380 | Semiconductor Layer Structure And Method Of Making The Same - A method of forming a semiconductor structure includes providing a substrate and providing a detach region which is carried by the substrate. A device structure which includes a stack of crystalline semiconductor layers is provided, wherein the detach region is positioned between the device structure and substrate. The stack is processed to form a vertically oriented semiconductor device. | 10-23-2008 |
20080265360 | Semiconductor Layer Structure And Method Of Making The Same - A semiconductor layer structure includes a donor substrate and a detach region carried by the donor substrate. A device structure is carried by the donor substrate and positioned proximate to the detach region. The device structure includes a stack of crystalline semiconductor layers. The stack of crystalline semiconductor layers includes a pn junction. | 10-30-2008 |
20090111241 | WAFER BONDING METHOD - A method includes steps of providing first and second substrates, and forming a bonding interface between them using a conductive bonding region. A portion of the second substrate is removed to form a mesa structure. A vertically oriented semiconductor device is formed with the mesa structure. A portion of the conductive bonding region is removed to form a contact. The vertically oriented semiconductor device is carried by the contact. | 04-30-2009 |
20090267233 | BONDED SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING THE SAME - A bonded semiconductor structure static random access memory circuit includes a support substrate which carries a first horizontally oriented transistor, and an interconnect region which includes a conductive line. The memory circuit includes a donor substrate which includes a semiconductor layer stack coupled to a donor substrate body region through a detach region, wherein the semiconductor layer stack is coupled to the interconnect region through a bonding interface, and wherein the semiconductor layer stack includes a pn junction. | 10-29-2009 |
20090325343 | BONDED SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of forming a bonded semiconductor structure circuit includes providing a support substrate which carries a first semiconductor circuit and providing a first interconnect region carried by the support substrate. The method includes providing a bonded semiconductor substrate which is bonded to the first interconnect region through a bonding interface and forming a second semiconductor circuit which is carried by the first bonded semiconductor substrate. | 12-31-2009 |
20100038743 | INFORMATION STORAGE SYSTEM WHICH INCLUDES A BONDED SEMICONDUCTOR STRUCTURE - An information storage system includes a bonded semiconductor structure having a memory circuit region carried by an interconnect region. The memory circuit region includes a memory control device region having a vertically oriented memory control device. The memory circuit region includes a memory device region in communication with the memory control device region. The memory device region includes a memory device whose operation is controlled by the vertically oriented memory control device. | 02-18-2010 |
20100112753 | SEMICONDUCTOR MEMORY DEVICE - A method includes forming a switching device which includes a vertical channel spaced apart from a semiconductor substrate, and forming a storage device which is positioned on opposed sides of the switching device. The storage device includes a cylindrically shaped storage node, a plate electrode coupled to the storage node, and a dielectric film which is formed between the storage node and plate electrode, the storage nodes being electrically connected to the switching device. | 05-06-2010 |
20100133695 | ELECTRONIC CIRCUIT WITH EMBEDDED MEMORY - Circuitry includes first and second circuits spaced apart by an interconnect region. The interconnect region includes a first interconnect, and the second circuit includes a stack of semiconductor layers. The first interconnect extends between the first and second circuits to provide communication therebetween. The second circuit operates as a memory circuit. | 06-03-2010 |
20100190334 | THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A semiconductor circuit structure includes a support substrate which carries an interconnect region and electronic circuitry. The semiconductor circuit structure includes a device substrate coupled to the interconnect region through a conductive bonding layer. The device substrate includes a planarized surface which faces the conductive bonding layer. The device substrate can carry laterally oriented semiconductor devices which are connected to the electronic circuitry carried by the support substrate. The device substrate can be processed to form vertically oriented semiconductor devices which are connected, through the interconnect region and conductive bonding layer, to the electronic circuitry carried by the support substrate. | 07-29-2010 |
20110001172 | THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE - A semiconductor structure includes an interconnect region and a semiconductor stack bonded to the interconnect region through a bonding region. The stack includes two semiconductor layers having different electrical properties. The stack also includes single crystalline semiconductor material. The stack can be processed to form a mesa structure and the mesa structure can be processed to from a vertically oriented semiconductor device. | 01-06-2011 |
20110003438 | THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE - A method of forming a semiconductor structure includes coupling a semiconductor structure to an interconnect region through a bonding region. The interconnect region includes a conductive line in communication with the bonding region. The bonding region includes a metal layer which covers the interconnect region. The semiconductor structure is processed to form a vertically oriented semiconductor device. | 01-06-2011 |
20110053332 | SEMICONDUCTOR CIRCUIT - A semiconductor memory device includes a substrate and an interconnect region carried by the substrate. A donor layer is coupled to the interconnect region through a bonding interface. An electronic device is formed with the donor layer, wherein the electronic device is formed after the bonding interface is formed. A capacitor is connected to the electronic device so that the electronic device and capacitor operate as a dynamic random access memory device. | 03-03-2011 |
20110143506 | METHOD FOR FABRICATING A SEMICONDUCTOR MEMORY DEVICE - A method for fabricating semiconductor memory device includes providing a first semiconductor substrate, and forming a first storage device on the first semiconductor substrate. The method includes forming a switching device on the first storage device, and forming a second storage devices on the switching device. Logic devices are formed below the first storage devices. | 06-16-2011 |
20110285027 | SEMICONDUCTOR CIRCUIT STRUCTURE AND METHOD OF FORMING THE SAME USING A CAPPING LAYER - A semiconductor structure includes an interconnect region, and a material transfer region coupled to the interconnect region through a bonding interface. The semiconductor structure includes a capping layer sidewall portion which extends annularly around the material transfer region and covers the bonding interface. The capping layer sidewall portion restricts the flow of debris from the bonding interface. | 11-24-2011 |
20110291234 | SEMICONDUCTOR CIRCUIT STRUCTURE AND METHOD OF MAKING THE SAME - A semiconductor circuit structure includes an interconnect region, and a material transfer region. The semiconductor circuit structure includes a conductive bonding region which couples the material transfer region to the interconnect region through a bonding interface. The conductive bonding region includes a barrier layer between a conductive layer and bonding layer. The bonding layer is positioned towards the material transfer region, and the conductive layer is positioned towards the interconnect region. | 12-01-2011 |
20120003808 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A method for fabricating semiconductor memory device, includes providing a semiconductor substrate; forming a lower region which includes a first data storage device, which is carried by the semiconductor substrate; forming a switching device which is carried by the first data storage device; and forming an upper region which includes a second data storage device, which is carried by the switching device. The step of forming the first storage device includes forming a first electrode having a cylindrical or pillar shape, the first electrode being connected to the switching device. | 01-05-2012 |
20120003815 | SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor substrate includes providing a first semiconductor substrate, which includes a detaching layer spaced from an upper surface of the first semiconductor substrate; forming an ion-implanted layer proximate to an edge of the detaching layer; bonding a second semiconductor substrate to the first semiconductor substrate; forming a crack in the ion-implanted layer in response to applying stress to the ion-implanted layer; and detaching a portion of the first semiconductor substrate in response to cleaving through the crack. | 01-05-2012 |