Patent application number | Description | Published |
20080197345 | Copolymer, organic insulating layer composition, and organic insulating layer and organic thin film transistor manufactured using the same - Disclosed herein is a copolymer, which may include side chains which may decrease the surface energy of an insulating layer, thereby improving the alignment of a semiconductor material, and side chains including photoreactive functional groups having an increased degree of cross-linking, thereby improving the characteristics of an organic thin film transistor manufactured using the same, an organic insulating layer composition including the copolymer, an organic insulating layer, an organic thin film transistor, an electronic device including the same and methods of fabricating the same. According to the copolymer of example embodiments, the surface energy of an insulating layer may be decreased, so that the alignment of a semiconductor material may be improved, thereby improving the threshold voltage and charge mobility and decreasing the generation of hysteresis at the time of driving the transistor. | 08-21-2008 |
20080241549 | Method for forming UV-patternable conductive polymer film and conductive polymer film formed by the same - Example embodiments provide a method for forming a UV-patternable conductive polymer film. According to the method, vapor-phase polymerization (VPP) may be employed to synthesize a conductive polymer and a UV-curable polymer resin may be used as a binder to form a conductive polymer film. Example embodiments also provide a conductive polymer film formed by the method. The conductive polymer film may be patterned in a relatively simple manner while maintaining increased conductivity, improved transparency and improved flexibility. Therefore, the conductive polymer film may be used as a material for transparent electrodes of a variety of display devices, e.g., LCD and PDP devices, and electronic devices, e.g., ELs and TFTs. | 10-02-2008 |
20080283828 | Organic semiconductor polymer having liquid crystal properties, organic active layer, organic thin film transistor, and electronic device including the same, and methods of fabricating the same - Example embodiments relate to an organic semiconductor polymer, in which fused thiophenes having liquid crystal properties and aromatic compounds having N-type semiconductor properties are alternately included in the main chain of the polymer, an organic active layer, an organic thin film transistor (OTFT), and an electronic device including the same, and methods of preparing the organic semiconductor polymer, and fabricating the organic active layer, the OTFT and the electronic device using the same. This organic semiconductor polymer has improved organic solvent solubility, processability, and thin film properties, and may impart increased charge mobility and decreased off-state leakage current when applied to the channel layer of the organic thin film transistor. | 11-20-2008 |
20080283829 | Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same - An organic insulator composition including a crosslinking agent and a hydroxyl group-containing oligomer or hydroxyl group-containing polymer is provided. A dielectric film and an organic thin film transistor (OTFT) using an organic insulator composition are also provided. A dielectric film may include a compound having hydroxyl group-containing oligomers or hydroxyl group-containing polymers linked by crosslinking using a crosslinking agent having at least two vinyl ether groups. An organic thin film transistor may include a gate electrode on a substrate, a gate insulating layer on the gate electrode, source and drain electrodes on the gate insulating layer and an organic semiconductor layer contacting the gate insulating layer, wherein the gate insulating layer includes an dielectric film as described above. | 11-20-2008 |
20080283831 | ZnO-BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer. | 11-20-2008 |
20080299702 | METHOD OF MANUFACTURING ZnO-BASED THIN FILM TRANSISTOR - A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration. | 12-04-2008 |
20080318368 | Method of manufacturing ZnO-based this film transistor - Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced. | 12-25-2008 |
20090032809 | Organic thin film transistor and method of manufacturing the same - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 02-05-2009 |
20090043113 | Heteroacene compound, organic thin film including a heteroacene compound and electronic device including an organic thin film - A heteroacene compound, an organic thin film including a heteroacene compound and an electronic device including a thin film are provided. The heteroacene compound is a compound having six rings fused together in a compact planar structure. The compound may be used in an organic thin film and/or applied to electronic devices using a deposition process or a room-temperature solution process. | 02-12-2009 |
20090045396 | Composition for forming passivation layer and organic thin film transistor comprising the passivation layer - Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics. | 02-19-2009 |
20090101891 | Multi-layered bipolar field-effect transistor and method of manufacturing the same - Disclosed herein is a multi-layered bipolar field-effect transistor, including a gate electrode, a gate insulating layer, an electron transport layer, a hole transport layer, a source electrode, and a drain electrode, in which an intermediate separating layer is formed between the electron transport layer and the hole transport layer, and a method of manufacturing the same. The multi-layered bipolar field-effect transistor has advantages in that, since a P-channel and a N-channel are effectively separated, the electrical properties thereof, such as current ON/OFF ratio, electron mobility, hole mobility, and the like, are improved, and, since a device can be manufactured through a solution process without damaging layers, the processability thereof is improved. | 04-23-2009 |
20090120495 | Alternating copolymers of phenylene vinylene and oligoarylene vinylene, preparation method thereof, and organic thin flim transister comprising the same - Disclosed herein are an alternating copolymer of phenylene vinylene and oligoarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and oligoarylene vinylene. | 05-14-2009 |
20090127560 | Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same - Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer. | 05-21-2009 |
20090140243 | Oxide semiconductor thin film transistors and fabrication methods thereof - Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled. | 06-04-2009 |
20090141203 | Display devices including an oxide semiconductor thin film transistor - A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance. | 06-04-2009 |
20090142887 | Methods of manufacturing an oxide semiconductor thin film transistor - Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer. | 06-04-2009 |
20090197620 | LOCATION-BASED INFORMATION SERVICE METHOD AND MOBILE TERMINAL THEREFOR - A location-based information service method for improving utilization of location-based information services and a mobile terminal for implementing the location-based information service method are provided. A method for providing an information service using a mobile terminal includes acquiring, at a mobile terminal, location information, determining an Internet Protocol (IP) address based on the location information, and receiving service information from a cyber space associated with a service provider that corresponds to the IP address. | 08-06-2009 |
20090218564 | Alternating copolymers of phenylene vinylene and biarylene vinylene, preparation method thereof, and organic thin flim transister comprising the same - Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and biarylene vinylene. | 09-03-2009 |
20090230388 | Composition for producing organic insulator comprising an organic-inorganic metal hybrid material - A composition for producing an organic insulator is provided which comprises an organic-inorganic hybrid material (as defined). The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material displays a high dielectric constant and a high degree of crosslinking. Based on these advantages, the composition comprising the organic-inorganic hybrid material can be utilized during the fabrication of various electronic devices by a wet process. A method for producing the organic insulator while utilizing the composition also is provided, as well as the resulting organic insulator, and an organic thin film transistor which incorporates the resulting insulating layer. | 09-17-2009 |
20090256143 | OLIGOTHIOPHENE-ARYLENE DERIVATIVES AND ORGANIC THIN FILM TRANSISTORS USING THE SAME - An oligothiophene-arylene derivative wherein an arylene having n-type semiconductor characteristics is introduced into an oligothiophene having p-type semiconductor characteristics, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. | 10-15-2009 |
20090291211 | Apparatus for atomic layer deposition and method of atomic layer deposition using the same - Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed. | 11-26-2009 |
20100012942 | Poly-si thin film transistor and method of manufacturing the same - Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer. | 01-21-2010 |
20100051942 | ZnO-BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer. | 03-04-2010 |
20100059756 | Thin film transistor and method of manufacturing the same - Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven. | 03-11-2010 |
20100065830 | Organic thin film transistor and method for fabricating the same - Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process. | 03-18-2010 |
20100072480 | Thin film transistor and method of manufacturing the same - A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel. | 03-25-2010 |
20100117034 | Organic semiconductor material using CNTs increased, organic semiconductor thin film using the same and organic semiconductor device employing the thin film - Example embodiments of the present invention relate to an organic semiconductor material using carbon nanotubes having increased semiconductivity, an organic semiconductor thin film using the same and an organic semiconductor device employing the thin film. By using the organic semiconductor material according to example embodiments of the present invention, a room-temperature wet process may be applied and a high-performance organic semiconductor device capable of simultaneously exhibiting increased electrical properties is provided. | 05-13-2010 |
20100127257 | Method of manufacturing ZnO-based thin film transistor - Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced. | 05-27-2010 |
20100136414 | APPARATUS FOR STORING ENERGY AND METHOD FOR MANUFACTURING THE SAME - An apparatus for storing energy may include: a plurality of nanowire cells electrically connected to each other; and a storage for storing electrical energy generated from the nanowire cells. Each of the plurality of nanowire cells may include: first and second electrodes disposed at an interval; and a nanowire, which is disposed between the first and the second electrodes and made of a piezoelectric material. The plurality of nanowire cells may be electrically connected, so that voltage or current may be increased. Therefore, wireless recharging of the storage connected to the nanowire cells with electrical energy may be enabled. | 06-03-2010 |
20100159219 | Negative pattern of carbon nanotubes and carbon nanotube composite comprising surface-modified carbon nanotubes - Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers. | 06-24-2010 |
20100200842 | Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure - Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same. | 08-12-2010 |
20100210069 | Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition - Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed. | 08-19-2010 |
20100258793 | Solution composition for forming oxide thin film and electronic device including the oxide thin film - A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1. | 10-14-2010 |
20100276683 | Oxide semiconductor and thin film transistor including the same - Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios. | 11-04-2010 |
20100302170 | METHOD FOR OPERATING INPUT MODE OF MOBILE TERMINAL COMPRISING A PLURALITY OF INPUT MEANS - A method of operating an input mode of a mobile terminal having a first input means and a second input means is provided. The method includes: displaying an input screen which is set as a first input mode; determining whether the second input means is in an activated state; and displaying a changed input screen which is set as a second input mode when the second input means is determined to be in an activated state. | 12-02-2010 |
20100321279 | Transistor, electronic device including a transistor and methods of manufacturing the same - Disclosed are a transistor, an electronic device and methods of manufacturing the same, the transistor including a photo relaxation layer between a channel layer and a gate insulating layer in order to suppress characteristic variations of the transistor due to light. The photo relaxation layer may be a layer of a material capable of suppressing variations in a threshold voltage of the transistor due to light. The photo relaxation layer may contain a metal oxide such as aluminum (Al) oxide. The channel layer may contain an oxide semiconductor. | 12-23-2010 |
20110050042 | APPARATUS FOR GENERATING ELECTRICAL ENERGY AND METHOD FOR MANUFACTURING THE SAME - Disclosed is an apparatus for generating electrical energy that includes; a first electrode, and a second electrode spaced apart from the first electrode, and an energy generation layer disposed between the first electrode and the second electrode, wherein the energy generation layer comprises a photoelectric conversion layer and a plurality of piezoelectric nanowires, and wherein when an external force is applied to at least one of the first electrode and the second electrode, the plurality of piezoelectric nanowires are transformed to generate electrical energy. | 03-03-2011 |
20110089409 | Alternating copolymers of phenylene vinylene and biarylene vinylene, preparation method thereof, and organic thin film transistor comprising the same - Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and biarylene vinylene. | 04-21-2011 |
20110104617 | Organometallic composition for forming a metal alloy pattern and a method of forming such a pattern using the composition - An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness, and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition. | 05-05-2011 |
20110127518 | Transistor, method of manufacturing the transistor and electronic device including the transistor - Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor. | 06-02-2011 |
20110175064 | Light emitting device and method of fabricating the same - A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process. | 07-21-2011 |
20110180803 | Thin film transistors and methods of manufacturing the same - Thin film transistors (TFTs) and methods of manufacturing the same. A TFT may include a floating channel on a surface of a channel and spaced apart from a source and a drain, and an insulating layer formed on the floating channel and designed to determine a distance between the floating channel and the source or the drain. | 07-28-2011 |
20110227064 | Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors - Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors. | 09-22-2011 |
20110233539 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film - Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers. | 09-29-2011 |
20120025187 | Transistors, methods of manufacturing transistors, and electronic devices including transistors - Transistors, methods of manufacturing the transistors, and electronic devices including the transistors. The transistor may include an oxide channel layer having a multi-layer structure. The channel layer may include a first layer and a second layer that are sequentially arranged from a gate insulation layer. The first layer may be a conductor, and the second layer may be a semiconductor having a lower electrical conductivity than that of the first layer. The first layer may become a depletion region according to a gate voltage condition. | 02-02-2012 |
20120083069 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 04-05-2012 |
20120104377 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME - Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process. | 05-03-2012 |
20120119239 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND FOLDABLE DISPLAY DEVICE INCLUDING THE SAME - An organic light-emitting display device includes a plurality of first and second electrodes which are spaced apart from each other on a substrate, a plurality of light-emitting layers between the first and second electrodes, a flexible thin encapsulation film on the second electrodes, and a color filter on the flexible thin encapsulation film. | 05-17-2012 |
20120122275 | METHODS OF FABRICATING ORGANIC THIN FILM TRANSISTORS - Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments. | 05-17-2012 |
20120138970 | FOLDABLE ORGANIC LIGHT EMITTING DIODE DISPLAY - A foldable display includes a first plate, a second plate, a first protecting window, a second protecting window, a soft material layer and an intermediate layer which controls brightness. The first plate includes a thin film transistor and an organic light emitting diode (“OLED”), and displays at least one portion of an image to be displayed. The second plate includes a thin film transistor and an OLED, and displays a second portion different from the first portion of the image. The first protecting window is on the first plate. The second protecting window is on the second plate. The soft material layer is between the first and second protecting windows. The intermediate layer is between the soft material layer and a side surface of the first protecting window, and between the soft material layer and the second protecting window. | 06-07-2012 |
20120146713 | Transistors And Electronic Devices Including The Same - A transistor includes a first active layer having a first channel region and a second active layer having a second channel region. A first gate of the transistor is configured to control electrical characteristics of at least the first active layer and a second gate is configured to control electrical characteristics of at least the second active layer. A source electrode contacts the first and second active layers. A drain electrode also contacts the first and second active layers. | 06-14-2012 |
20120168756 | Transistor, Method Of Manufacturing The Same, And Electronic Device Including The Transistor - Transistors, methods of manufacturing the same, and electronic devices including the transistors. The transistor may include a light blocking member which surrounds at least a portion of the channel layer. The light blocking member may be designed to block light laterally incident from a side of the transistor toward the channel layer (that is, laterally incident light). The light blocking member may be disposed in a portion of a gate insulation layer outside the channel layer. The light blocking member may be connected to a source and a drain or may be connected to a gate. The light blocking member may be separated from the source, the drain and the gate. The light blocking member may completely surround the channel layer. | 07-05-2012 |
20120181519 | Organic Semiconductor Device And Method Of Manufacturing The Same - An organic semiconductor device includes an organic semiconductor, an electrode electrically connected to the organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end. | 07-19-2012 |
20120192466 | FOLDABLE DISPLAY DEVICE - A foldable display device includes a first display panel which displays a portion of an image; a second display panel which displays a second portion different from the first portion of the image; a first protecting window on the first display panel; a second protecting window on the second display panel; and a flexible material layer between the first and second protecting windows. Side surfaces of the first and second protecting windows which contact the flexible material layer, respectively, are inclined with respect to a surface of each of the first and second protecting windows. | 08-02-2012 |
20120194885 | NANOSTRUCTURED ACOUSTO-OPTIC DEVICE, AND OPTICAL SCANNER, OPTICAL MODULATOR, AND HOLOGRAPHIC DISPLAY APPARATUS USING THE NANOSTRUCTURED ACOUSTO-OPTIC DEVICE - An acousto-optic device capable of increasing a range of a diffraction angle of output light by using a nanostructured acousto-optic medium, and an optical scanner, an optical modulator, a two-dimensional/three-dimensional (2D/3D) conversion stereoscopic image display apparatus, and a holographic display apparatus using the acousto-optic device. The acousto-optic device may include a nanostructured acousto-optic medium formed by at least two different mediums repeatedly alternating with each other, wherein at least one of the at least two different mediums includes an acousto-optic medium. The acousto-optic device having the aforementioned structure may increase the range of a diffraction angle of output light. Thus, various systems such as the optical scanner, the optical modulator, the 2D/3D conversion stereoscopic image display apparatus, and the holographic display apparatus may not require a separate optical system to increase an operational angle range, thereby decreasing a size of the system and/or improving a resolution of the system. | 08-02-2012 |
20120223288 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT). | 09-06-2012 |
20120225196 | APPARATUS FOR GENERATING ELECTRICAL ENERGY AND METHOD FOR MANUFACTURING THE SAME - Disclosed is an apparatus for generating electrical energy that includes; a first electrode, and a second electrode spaced apart from the first electrode, and an energy generation layer disposed between the first electrode and the second electrode, wherein the energy generation layer comprises a photoelectric conversion layer and a plurality of piezoelectric nanowires, and wherein when an external force is applied to at least one of the first electrode and the second electrode, the plurality of piezoelectric nanowires are transformed to generate electrical energy. | 09-06-2012 |
20120280340 | MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - A memory device includes a lower electrode formed on a substrate, and an information storage unit formed on the lower electrode. The information storage unit includes a plurality of information storage layers spaced apart from one another. Each of the plurality of information storage layers is an information unit. A method of manufacturing a memory device uses a porous film to form the plurality of information storage layers. | 11-08-2012 |
20120295407 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel. | 11-22-2012 |
20130001554 | Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor - An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns. | 01-03-2013 |
20130003066 | ACOUSTO-OPTIC DEVICE HAVING MULTI-LAYER NANOSTRUCTURE, OPTICAL SCANNER, OPTICAL MODULATOR, AND DISPLAY APPARATUS USING THE ACOUSTO-OPTIC DEVICE - An acousto-optic device includes an acousto-optic medium having a multi-layer nanostructure; and a sonic wave generator configured to apply sonic waves to the acousto-optic medium having the multi-layer nanostructure. The acousto-optic medium having the multi-layer nanostructure includes a second layer formed of at least two materials that have different dielectric constants and alternate with each other; and a first layer disposed on a first surface of the second layer and formed of a first material, and/or a third layer disposed on a second surface of the second layer and formed of a fourth material. | 01-03-2013 |
20130021388 | LIGHT REFRACTION CONTROLLING PANEL, 3D-DISPLAY COMPRISING THE SAME, AND METHOD OF OPERATING THE 3D-DISPLAY - A light refraction controlling panel, a 3D-display, and a method of operating a 3D-display are provided. The light refraction controlling panel includes a transparent substrate, a barrier wall on the transparent substrate, first to fourth electrodes on the barrier wall, the first to fourth electrodes being separated from each other, an electro-wetting prism within the barrier wall, the electro-wetting prism being configured to refract incident light to a desired direction, and an isolation layer between the barrier wall and the first to fourth electrodes, and the electro-wetting prism. One electrode of two adjacent electrodes of the first to fourth electrodes is inside an other electrode of the two adjacent electrodes. | 01-24-2013 |
20130034708 | METHOD OF PREPARING THIN FILM, THIN FILM, APPARATUS FOR PREPARING THIN FILM, AND ELECTRONIC DEVICE INCLUDING THIN FILM - A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 Å to about 20,000 Å and a refractive index in a range of about 1.85 to about 2.0. | 02-07-2013 |
20130036943 | SOLUTION COMPOSITION FOR FORMING OXIDE THIN FILM AND ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM - A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1. | 02-14-2013 |
20130043475 | TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS - A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain. | 02-21-2013 |
20130140551 | TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %. | 06-06-2013 |
20130183609 | THIN FILM PATTERNING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM PATTERNING METHOD - A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO). | 07-18-2013 |
20130215483 | PLASMONIC MODULATOR AND OPTICAL APPARATUS INCLUDING THE SAME - A plasmonic modulator and an optical apparatus including the same are provided. The plasmonic modulator includes a first metal layer, and a second metal layer facing the first metal layer. The plasmonic modulator further includes a refractive index varying layer disposed between the first and second metal layers and including a varying refractive index, and an insulating nitride layer disposed between the refractive index varying layer and the first metal layer. | 08-22-2013 |
20130221343 | TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING TRANSISTOR - A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer. | 08-29-2013 |
20130234116 | ORGANIC MICROELECTRONIC DEVICE AND FABRICATION METHOD THEREFOR - An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities. | 09-12-2013 |
20130248851 | Oxide Thin Film, Methods Of Manufacturing Oxide Thin Film And Electronic Devices Including Oxide Thin Film - Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers. | 09-26-2013 |
20130256643 | METHODS FOR FORMING BANKS AND ORGANIC THIN FILM TRANSISTORS COMPRISING SUCH BANKS - Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments. | 10-03-2013 |
20130306966 | TRANSISTOR HAVING SULFUR-DOPED ZINC OXYNITRIDE CHANNEL LAYER AND METHOD OF MANUFACTURING THE SAME - Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode. | 11-21-2013 |
20130347007 | METHOD FOR EVENT PROCESSING USING HIERARCHICAL STRUCTURES AND EVENT PROCESSING SYSTEM THEREOF - Provided is a method for event processing and a system for using the same. The system for event processing in a computer may include an interface to detect an input associated with an event, an event definition engine which defines the event using a plurality of event components and a corresponding event component wrapper wrapping each of the plurality of event components, an event processing engine which processes the event, and an event action module to generate an output based on the event. The event definition engine may determine a hierarchical relationship between the plurality of event components and assigns the hierarchical relationship in the corresponding event component wrapper. Moreover, the event processing engine may execute each of the event components according to the hierarchical relationship assigned in the event component wrapper. | 12-26-2013 |
20140001464 | OXYNITRIDE CHANNEL LAYER, TRANSISTOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME | 01-02-2014 |
20140063578 | APPARATUS FOR RECORDING AND REPRODUCING HOLOGRAM - A hologram recording and reproducing apparatus including: a coherent light source; a beam splitter which splits a beam emitted from the coherent light source into a signal beam and a reference beam; a signal beam forming unit which modulates the signal beam split and directs the modulated signal beam onto a hologram recording medium; and a reference beam forming unit which directs the reference beam to be irradiated onto a location on the hologram recording medium which overlaps with a location on the hologram recording medium on which the signal beam is incident, wherein the signal beam forming unit includes: a first light guide member which transmits the signal beam split by the beam splitter; a spatial light modulator (SLM) which modulates the signal beam transmitted through the first light guide member; and a holographic Fourier transformation optical device which focuses the modulated signal beam onto the hologram recording medium. | 03-06-2014 |
20140093997 | METHOD OF MANUFACTURING AN ORGANIC SEMICONDUCTOR THIN FILM - A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted. | 04-03-2014 |
20140143793 | EVENT PROCESSING METHOD AND APPARATUS PERFORMING THE SAME - An event processing method includes receiving an event from an event source and identifying an event population and non-event population based on the received event, such that the event population includes a plurality of events and the non-event population includes a plurality of non-events. The method further includes identifying an event feedback group from the events of the identified event population, such that the event feedback group identifies a number of events of the identified event population that have performed a required operation, and determining a ratio of event feedback, the ratio of the event feedback being a ratio of the number of events identified by the event feedback group to a number of the events of the identified event population. | 05-22-2014 |
20140159035 | TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor. | 06-12-2014 |
20140256085 | METHOD OF MANUFACTURING AN ORGANIC SEMICONDUCTOR THIN FILM - A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted. | 09-11-2014 |
20140291664 | SOLUTION COMPOSITION FOR FORMING OXIDE SEMICONDUCTOR, AND OXIDE SEMICONDUCTOR AND ELECTRONIC DEVICE INCLUDING THE SAME - A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof. | 10-02-2014 |
20140329547 | LOCATION-BASED INFORMATION SERVICE METHOD AND MOBILE TERMINAL THEREFOR - A location-based information service method for improving utilization of location-based information services and a mobile terminal for implementing the location-based information service method are provided. A method for providing an information service using a mobile terminal includes acquiring, at a mobile terminal, location information, determining an Internet Protocol (IP) address based on the location information, and receiving service information from a cyber space associated with a service provider that corresponds to the IP address. | 11-06-2014 |