Patent application number | Description | Published |
20100321132 | TUNABLE MEMS RESONATORS - Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable plate located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge. | 12-23-2010 |
20110109383 | MEMS VARACTORS - MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal receiving a DC voltage, and (iii) a top plate formed over the first and second bottom plates and electrically coupled to a third terminal. The DC voltage causes the top plate to mechanically move and vary the capacitance observed by the input signal. In another exemplary design, a MEMS varactor includes first, second and third plates formed on over one another and electrically coupled to first, second and third terminals, respectively. First and second DC voltages may be applied to the first and third terminals, respectively. An input signal may be passed between the first and second terminals. | 05-12-2011 |
20110316657 | Three Dimensional Wire Bond Inductor and Transformer - A three-dimensional inductor or transformer for an electronic packaging system that includes a plurality of conductive traces and a plurality of conductive wire bonds. The traces are located in a single layer, and each have a first and second pad. Each of the wire bonds couples the second pad of one trace to the first pad of another trace. The trace and wire bonds create a continuous conductive path from the first pad of a first trace to the second pad of a last trace. Passing a current from the first trace to the last trace creates an electromagnetic field between the single layer and the wire bonds. The transformer includes two independent and electromagnetically coupled inductors that can be interleaved. The continuous conductive path can be solenoid-shaped. A shielding layer can also be included that blocks the substrate from the electromagnetic field of the inductor or transformer. | 12-29-2011 |
20120274647 | PIEZOELECTRIC RESONATORS AND FABRICATION PROCESSES - This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a sacrificial layer is deposited on an insulating substrate. A lower electrode layer is formed proximate the sacrificial layer. A piezoelectric layer is deposited on the lower electrode layer. An upper electrode layer is formed on the piezoelectric layer. At least a portion of the sacrificial layer is removed to define a cavity such that at least a portion of the lower electrode layer is spaced apart from the insulating substrate. | 11-01-2012 |
20120293520 | PIEZOELECTRIC RESONATORS WITH CONFIGURATIONS HAVING NO GROUND CONNECTIONS TO ENHANCE ELECTROMECHANICAL COUPLING - This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, resonator apparatus includes a first conductive layer including a first electrode and a second electrode. The first electrode is coupled to receive a first input signal, and the second electrode is coupled to provide a first output signal. A piezoelectric layer includes a piezoelectric material. The piezoelectric layer has a first side and a second side opposite the first side. The first side is proximate the first conductive layer, and the second side is electrically isolated from ground. In some examples, the second side of the piezoelectric layer can be exposed and/or electrically de-coupled from one or more components. | 11-22-2012 |
20120302188 | TUNABLE MULTI-BAND RECEIVER - A tunable multi-band receiver supporting operation on a plurality of frequency bands is disclosed. In an exemplary design, the tunable multi-band receiver includes an antenna tuning network, a tunable notch filter, and at least one low noise amplifier (LNA). The antenna tuning network tunes an antenna (e.g., a diversity antenna) to a receive band in a plurality of receive bands. The tunable notch filter is tunable to a transmit band in a plurality of transmit bands and attenuates signal components in the transmit band. One LNA among the at least one LNA amplifies an output signal from the tunable notch filter. The tunable multi-band receiver may further include one or more additional tunable notch filters to further attenuate the signal components in the transmit band. | 11-29-2012 |
20130120080 | SPURIOUS-MODE SUPPRESSION PIEZOELECTRIC RESONATOR DESIGN - Provided are methods and apparatus to improve upon conventional piezoelectric resonators. Also provided are apparatus and methods to improve upon filters having piezoelectric resonators. In an example, a piezoelectric resonator includes a substrate, and a piezoelectric material disposed on the substrate. A first electrode and a second electrode are disposed on the piezoelectric material. The piezoelectric resonator has a passband, and a portion of the perimeter of the piezoelectric material is anchored to the substrate to suppress an in-band spurious mode of the piezoelectric material. The portion, if unanchored, would exhibit maximum, near-maximum, and/or excessive displacement deflection at resonance. The piezoelectric resonator can be integrated in a semiconductor die. Multiple filters having piezoelectric resonators with respective different passbands can be disposed on the substrate. | 05-16-2013 |
20130120951 | STACKED CMOS CHIPSET HAVING AN INSULATING LAYER AND A SECONDARY LAYER AND METHOD OF FORMING SAME - A chipset includes a sheet of glass, quartz or sapphire and a first wafer having at least one first circuit layer on a first side of a first substrate layer. The first wafer is connected to the sheet such that the at least one first circuit layer is located between the first substrate layer and the sheet. A second wafer having at least one second circuit layer on a first side of a second substrate layer is connected to the first substrate layer such that the at least one second circuit layer is located between the second substrate layer and the first substrate layer. Also a method of forming a chipset. | 05-16-2013 |
20130176657 | ELECTROMECHANICAL SYSTEMS VARIABLE CAPACITANCE ASSEMBLY - This disclosure provides systems, methods and apparatus for a variable capacitance apparatus. In one aspect, an apparatus includes a plurality of electromechanical systems varactors connected in parallel. Each of the plurality of electromechanical systems varactors includes a first, a second, and a third metal layer. The first metal layer includes a first bias electrode. The second metal layer is spaced apart from the first metal layer to define a first air gap, and includes a first radio frequency electrode. A third metal layer is spaced apart from the second metal layer to define a second air gap, and includes a second radio frequency electrode and a second bias electrode. The second bias electrode of each of the plurality of electromechanical systems varactors has a different projected area perpendicular to a surface of the second metal layer and onto the surface of the second metal layer. | 07-11-2013 |
20130278359 | TWO- AND THREE-SUBSTRATE LEVEL PROCESSES FOR PRODUCING EVANESCENT MODE ELECTROMAGNETIC WAVE CAVITY RESONATORS - This disclosure provides implementations of electromechanical systems (EMS) resonator structures, devices, apparatus, systems, and related processes. In one aspect, a method includes providing a first substrate and a second substrate. In some implementations, the first substrate includes a cavity ceiling, an array of dielectric spacers, and an assembly platform arranged adjacent the array of dielectric spacers opposite the cavity ceiling surface. The assembly platform includes a plurality of post tops. In some implementations, the second substrate has an array of cavities and an array of resonator posts. In some implementations, the method includes mating the first substrate with the second substrate, connecting the post tops with the posts to form an array that includes a plurality of evanescent-mode electromagnetic wave cavity resonators, wherein at least a statically-defined magnitude of a gap distance between the distal surface of each post top and the cavity ceiling is defined by the dielectric spacers. | 10-24-2013 |
20130278609 | ISOTROPICALLY-ETCHED CAVITIES FOR EVANESCENT-MODE ELECTROMAGNETIC-WAVE CAVITY RESONATORS - This disclosure provides implementations of electromechanical systems (EMS) resonator structures, devices, apparatus, systems, and related processes. In one aspect, a device includes an evanescent-mode electromagnetic-wave cavity resonator. In some implementations, the resonator includes an isotropically-etched cavity operable to support one or more evanescent electromagnetic wave modes. In some implementations, the resonator also includes a cavity ceiling arranged to form a volume in conjunction with the isotropically-etched cavity. In some implementations, the resonator also includes a capacitive tuning structure having a portion that is located at least partially within the volume so as to support the evanescent electromagnetic wave modes. In some implementations, a distal surface of the tuning structure is separated from the closest surface to it by a gap distance, a resonant electromagnetic wave mode of the cavity resonator being dependent at least partially on the gap distance. | 10-24-2013 |
20130278610 | TOPPED-POST DESIGNS FOR EVANESCENT-MODE ELECTROMAGNETIC-WAVE CAVITY RESONATORS - This disclosure provides implementations of electromechanical systems (EMS) resonator structures, devices, apparatus, systems, and related processes. In one aspect, a device includes an evanescent-mode electromagnetic-wave cavity resonator that includes a cavity operable to support one or more evanescent electromagnetic wave modes. The resonator includes a cavity ceiling arranged to form a volume in conjunction with the cavity. The resonator also includes a capacitive tuning structure. In some implementations, the resonator also includes a post top positioned at a distal surface of the capacitive tuning structure. In some implementations, the post top has a dimension that is larger than a corresponding dimension of the capacitive tuning structure. In some implementations, a distal surface of the post top is separated from a surface by a gap distance, a resonant electromagnetic wave mode of the cavity resonator being dependent at least partially upon the gap distance and the dimension of the post top. | 10-24-2013 |
20130278998 | IN-PLANE RESONATOR STRUCTURES FOR EVANESCENT-MODE ELECTROMAGNETIC-WAVE CAVITY RESONATORS - This disclosure provides implementations of electromechanical systems (EMS) resonator structures, devices, apparatus, systems, and related processes. In one aspect, a device includes an evanescent-mode electromagnetic-wave cavity resonator. In some implementations, the cavity resonator includes a lower cavity portion and an upper cavity portion that together form a volume. The cavity resonator also includes an in-plane lithographically-defined resonator structure having a portion that is located at least partially within the volume to support one or more evanescent electromagnetic wave modes. In some implementations, an upper surface of the resonator structure is connected with the upper cavity portion while a lower mating surface is connected with the lower cavity portion. A distal surface of the resonator structure is separated or electrically insulated from the closest surface to it by a gap distance, a resonant electromagnetic wave mode of the cavity resonator being dependent at least partially upon the gap distance. | 10-24-2013 |
20140009862 | MEMS VARACTORS - Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable layer located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge. | 01-09-2014 |
20140035702 | HYBRID FILTER INCLUDING LC- AND MEMS-BASED RESONATORS - This disclosure provides implementations of filters and filter topologies, circuits, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes one or more LC resonant circuit stages. In some implementations, each LC stage includes an inductor and a capacitor. Each LC stage also has a corresponding resonant frequency. The one or more LC stages are arranged to produce an unmodified passband over a range of frequencies having a corresponding bandwidth. One or more microelectromechanical systems (MEMS) resonators are arranged with the one or more LC stages. The one or more MEMS resonators are arranged with the one or more LC stages so as to modify characteristics of the unmodified passband such that the hybrid filter produces a modified passband having a modified bandwidth and one or more other modified band characteristics. | 02-06-2014 |
20140111064 | COMPOSITE DILATION MODE RESONATORS - This disclosure provides systems, methods and apparatus related to acoustic resonators that include composite transduction layers for enabling selective tuning of one or more acoustic or electromechanical properties. In one aspect, a resonator structure includes one or more first electrodes, one or more second electrodes, and a transduction layer arranged between the first and second electrodes. The transduction layer includes a plurality of constituent layers. In some implementations, the constituent layers include one or more first piezoelectric layers and one or more second piezoelectric layers. The transduction layer is configured to, responsive to signals provided to the first and second electrodes, provide at least a first mode of vibration of the transduction layer with a displacement component along the z axis and at least a second mode of vibration of the transduction layer with a displacement component along the plane of the x axis and they axis. | 04-24-2014 |
20140125432 | SELECTIVE TUNING OF ACOUSTIC DEVICES - This disclosure provides implementations of methods, apparatus and systems for producing acoustic wave devices and for selectively modifying one or more acoustic or electromechanical characteristics of such devices. In one aspect, a method includes depositing a structural layer over a substrate. The structural layer includes a plurality of structural portions, each being positioned over a corresponding device region. The method also includes arranging a mask layer over the structural layer. The mask layer includes a plurality of mask portions, each including a number of mask openings that expose a corresponding region of the structural portion. The method also includes accelerating dopant particles toward the mask layer. The accelerated dopant particles that proceed through the mask openings are impacted into the corresponding structural portion. The impacted dopant particles modify material properties in the structural portion, which then effect a change in the acoustic or electromechanical characteristics of the acoustic wave device. | 05-08-2014 |