Patent application number | Description | Published |
20090015165 | Plasma generating apparatus - A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma. | 01-15-2009 |
20100065215 | Plasma generating apparatus - A plasma generating apparatus including a plurality of plasma source modules. Each plasma source module includes a ferrite core having high magnetic permeability and a plasma channel through which plasma may pass. The plasma generating apparatus may effectively generate and uniformly distribute large-area and high-density plasma without a dielectric window. | 03-18-2010 |
20120006351 | Methods Of Cleaning And Plasma Processing Apparatus For Manufacturing Semiconductors - A cleaning method for cleaning a semiconductor manufacturing apparatus may include generating plasma from a cleaning gas. The semiconductor manufacturing apparatus may be cleaned with the plasma. A positive direct-current voltage may be applied to an ESC of the semiconductor manufacturing apparatus during a cleaning of the semiconductor manufacturing apparatus. A negative direct-current voltage may be applied to the ESC during the cleaning of the semiconductor manufacturing apparatus. Also, a wall of the process chamber may be cleaned by applying the positive direct-current voltage to the ESC. | 01-12-2012 |
20120007503 | Plasma Generating Apparatus - At least two antenna coils are electrically connected in parallel to each other to generate uniform high density plasma, and capacitors are installed between the respective antenna coils and a ground to minimize an antenna voltage, thereby minimizing the effect of capacitive plasma coupling due to the antenna voltage. | 01-12-2012 |
20120118876 | FLIP CHIP BONDING APPARATUS AND MANUFACTURING METHOD THEREOF - According to example embodiments, a flip chip bonding apparatus includes a metal chamber, a stage in the metal chamber, and a planar antenna in the chamber. The stage may be configured to receive a circuit board having flip chips arranged thereon. The antenna may be configured to bond the flip chips to the circuit board by inductively heating the flip chips on the circuit board. | 05-17-2012 |
20130139380 | CHIP BONDING APPARATUS AND CHIP BONDING METHOD USING THE SAME - A chip bonding apparatus configured to bond chips to a circuit board using induction heating generated by an AC magnetic field may be provided. In particular, the chip bonding apparatus includes at least one stage unit configured to support a circuit board on which a chip is placed, a rotating unit configured to rotatively move the at least one stage unit at a desired angle, and a bonding unit including an induction heating antenna configured to perform induction heating such the chip is bonded to the circuit board. | 06-06-2013 |
20130141720 | PLASMA DIAGNOSTIC APPARATUS AND METHOD - A plasma diagnostic apparatus includes a vacuum chamber unit having at least one electrode and having plasma generated inside. A bias power unit is disposed inside the vacuum chamber unit to apply a radio frequency voltage to an electrode that supports a wafer. A spectrum unit decomposes light emitted from inside the plasma according to wavelengths. A light detection unit detects the light decomposed according to wavelengths. A control unit controls a turn-on and turn-off process of the light detection unit according to a waveform of the radio frequency voltage. | 06-06-2013 |
20130160950 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus capable of adjusting a processing rate (e.g., etching or deposition rate) of a sample locally by adjusting a plasma density may be provided. For example, the plasma processing apparatus may include a processing chamber, an antenna coil inside the processing chamber to generate magnetic field, and a magnetic field blocking member configured to block the magnetic field generated at the antenna coil such that an intensity of the magnetic field is controlled by adjusting a gap distance between the magnetic field blocking member and the antenna coil. According to the plasma processing apparatus, an asymmetric etching of the sample can be minimized. | 06-27-2013 |
20140193978 | METHOD OF PLASMA PROCESSING AND APPARATUSES USING THE METHOD - A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other. | 07-10-2014 |
20140273484 | INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING THE SAME - An inductively coupled plasma processing apparatus includes a chamber configured to provide a space for processing a substrate and including a window formed in an upper portion thereof, a substrate stage configured to support the substrate within the chamber and including a lower electrode, the lower electrode configured to receive a first radio frequency signal, an upper electrode arranged on the upper portion of the chamber with the window interposed between the upper electrode and the space for processing the substrate, the upper electrode configured to receive a second radio frequency signal, a conductive shield member arranged within the chamber and configured to cover the window, and a shield power supply configured to apply a shield signal to the shield member in synchronization with the second radio frequency signal. | 09-18-2014 |