Patent application number | Description | Published |
20100059665 | Contraband detection system - A compact contraband detection system having a radiography device which pre-screens an article subject to inspection to locate regions of interest which may then be further interrogated with a pulsed radiation generator, such as a pulsed fast neutron generator. The pulsed radiation generator includes an integrated particle generator-accelerator having a charged particle generator connected to a compact linear accelerator which produces, injects, and accelerates a charged particle beam. A beam target is provided in the path of the accelerated beam to generate a pulse of interrogating radiation which is directed to the article for interrogation. | 03-11-2010 |
20120106690 | NEUTRON INTERROGATION SYSTEMS USING PYROELECTRIC CRYSTALS AND METHODS OF PREPARATION THEREOF - According to one embodiment, an apparatus includes a pyroelectric crystal, a deuterated or tritiated target, an ion source, and a common support coupled to the pyroelectric crystal, the deuterated or tritiated target, and the ion source. In another embodiment, a method includes producing a voltage of negative polarity on a surface of a deuterated or tritiated target in response to a temperature change of a pyroelectric crystal, pulsing a deuterium ion source to produce a deuterium ion beam, accelerating the deuterium ion beam to the deuterated or tritiated target to produce a neutron beam, and directing the ion beam onto the deuterated or tritiated target to make neutrons using a voltage of the pyroelectric crystal and/or an HGI surrounding the pyroelectric crystal. The directionality of the neutron beam is controlled by changing the accelerating voltage of the system. Other apparatuses and methods are presented as well. | 05-03-2012 |
20130342306 | COMPACT OPTICAL TRANSCONDUCTANCE VARISTOR - A compact radiation-modulated transconductance varistor device having both a radiation source and a photoconductive wide bandgap semiconductor material (PWBSM) integrally formed on a substrate so that a single interface is formed between the radiation source and PWBSM for transmitting PWBSM activation radiation directly from the radiation source to the PWBSM. | 12-26-2013 |
20140263976 | HIGH FREQUENCY MODULATION CIRCUITS BASED ON PHTOCONDUCTIVE WIDE BANDGAP SWITCHES - Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal. | 09-18-2014 |
20140270777 | WIDE BANDGAP MATRIX SWITCHER, AMPLIFIER AND OSCILLATOR - An electronic device comprising an optical gate, an electrical input an electrical output and a wide bandgap material positioned between the electrical input and the electrical output to control an amount of current flowing between the electrical input and the electrical output in response to a stimulus received at the optical gate can be used in wideband telecommunication applications in transmission of multi-channel signals. | 09-18-2014 |
20140284451 | REDUCING LOCALIZED HIGH ELECTRIC FIELDS IN PHOTOCONDUCTIVE WIDE BANDGAP SEMICONDUCTORS - Methods, systems, and devices are disclosed for implementing a high voltage variable resistor. In one aspect, an optical transconductance variable resistor includes a photoconductive wide bandgap semiconductor material (PWBSM) substrate, whose conduction response to changes in amplitude of incident radiation that is substantially linear throughout a non-saturation region thereof, whereby the material is operable in non-avalanche mode as a variable resistor, and first and second electrodes in contact with the material so that: a first triple junction boundary region is formed between the PWBSM substrate and the first electrode, and a second triple junction boundary region is formed between the PWBSM substrate and the second electrode, and the PWBSM substrate is located within an internal triple junction region formed between the first and second triple junction boundary regions. | 09-25-2014 |
20140312741 | HIGH VOLTAGE SWITCHES HAVING ONE OR MORE FLOATING CONDUCTOR LAYERS - This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems. | 10-23-2014 |
20150028674 | FOUR-TERMINAL CIRCUIT ELEMENT WITH PHOTONIC CORE - A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated based on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements. | 01-29-2015 |