Patent application number | Description | Published |
20080213961 | PROCESS FOR MANUFACTURING A TFT DEVICE WITH SOURCE AND DRAIN REGIONS HAVING GRADUAL DOPANT PROFILE - Process for realizing TFT devices on a substrate which comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer provided with an opening, removing the heavily doped amorphous silicon layer through the opening for realizing opposite portions of the heavily doped amorphous silicon layer whose cross dimensions decrease as long as they depart from the amorphous silicon layer, removing the photolithographic mask, carrying out a diffusion and activation step of the dopant contained in the portions of the heavily doped amorphous silicon layer inside the amorphous silicon layer, for realizing source/drain regions of said TFT device. | 09-04-2008 |
20080283780 | DEVICE HAVING GALVANIC OPTOCOUPLING - The present disclosure relates to an architecture of a device with galvanic optocoupling of the type having at least one optical source and one optical detector, optically connected by means of an insulation layer that functions to transmission optical signals, and having at least one input terminal and one output terminal, the optical source and the optical detector connected to a respective first and second voltage reference. The optical source is realized by a structure integrated directly above the insulation layer in correspondence with the optical detector, the architecture thus completely realized inside a single integration island. | 11-20-2008 |
20090011529 | IR-LIGHT EMITTERS BASED ON SWNT'S (SINGLE WALLED CARBON NANOTUBES), SEMICONDUCTING SWNTS-LIGHT EMITTING DIODES AND LASERS - The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given. | 01-08-2009 |
20090060827 | METHOD FOR GROWING CARBON NANATUBES HAVING A PREDETERMINED CHIRALITY - A method for growing carbon nanotubes having a determined chirality includes fragmenting at least one initial carbon nanotube having a determined chirality to obtain at least two portions of carbon nanotube. Each portion has a free growth end. Atoms of carbon are supplied with an autocatalyst addition of the atoms of carbon at the free growth end of each portion of nanotube to determine an elongation or growth of the nanotube. | 03-05-2009 |
20090321619 | OPTICALLY CONTROLLED ELECTRICAL-SWITCH DEVICE BASED UPON CARBON NANOTUBES AND ELECTRICAL-SWITCH SYSTEM USING THE SWITCH DEVICE - Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected between the first and the second current-conduction terminals, the carbon nanotube being designed to be impinged upon by electromagnetic radiation and having an electrical conductivity that can be varied by varying the polarization of the electromagnetic radiation incident thereon. In particular, the carbon nanotube may for example, in given conditions of electrical biasing, present a high electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially parallel to the axis of the carbon nanotube itself, and a reduced electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially orthogonal to the axis of the carbon nanotube itself. | 12-31-2009 |
20100200043 | SOLAR PANEL HAVING TWO MONOLITHICAL MULTICELL PHOTOVOLTAIC MODULES OF DIFFERENT FABRICATION TECHNOLOGY - A solar panel may include a first multi-cell thin-film photovoltaic module of a first fabrication type including a transparent support forming a front surface of the panel, a first pair of connection terminals on the transparent support, and first cells of a certain area, being on the transparent support, and being connected in series to the first pair of connection terminals. The solar panel may include a second multi-cell thin-film photovoltaic module of a second fabrication type comprising a support forming a rear surface of the panel, a second pair of connection terminals on the support, and second cells of a certain area, being on the support, and being connected in series to the second pair of connection terminals. The solar panel may further include a pair of panel terminals for connecting the solar panel to an external circuit, the first and second pairs of connection terminals being connected either in series or in parallel, and then connected to the external circuit through the panel terminals, or both connected to a maximum power point tracker and then connected to the external circuit through the panel terminals. | 08-12-2010 |
20100216046 | FUEL CELL FORMED IN A SINGLE LAYER OF MONOCRYSTALLINE SILICON AND FABRICATION PROCESS - Fuel cells are formed in a single layer of conductive monocrystalline silicon including a succession of electrically isolated conductive silicon bodies separated by narrow parallel trenches etched through the whole thickness of the silicon layer. Semicells in a back-to-back configuration are formed over etch surfaces of the separation trenches. Each semicell formed on the etch surface of one of the silicon bodies forming an elementary cell in cooperation with an opposite semicell formed on the etch surface of the next silicon body of the succession, is separated by an ion exchange membrane resin filling the separation trench between the opposite semicells forming a solid electrolyte of the elementary cell. Each semicell includes a porous conductive silicon region permeable to fluids, extending for a certain depth from the etch surface of the silicon body, at least partially coated by a non passivable metallic material. Each of the porous and fluid permeable regions communicates with a feed duct of a fuel fluid or of oxygen gas that extends parallel to the etch surface inside the conductive silicon body. | 08-26-2010 |
20110212566 | OPTICALLY CONTROLLED ELECTRICAL-SWITCH DEVICE BASED UPON CARBON NANOTUBES AND ELECTRICAL-SWITCH SYSTEM USING THE SWITCH DEVICE - Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected between the first and the second current-conduction terminals, the carbon nanotube being designed to be impinged upon by electromagnetic radiation and having an electrical conductivity that can be varied by varying the polarization of the electromagnetic radiation incident thereon. In particular, the carbon nanotube may for example, in given conditions of electrical biasing, present a high electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially parallel to the axis of the carbon nanotube itself, and a reduced electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially orthogonal to the axis of the carbon nanotube itself. | 09-01-2011 |
20110291026 | OPTICALLY ACCESSIBLE MICROFLUIDIC DIAGNOSTIC DEVICE - A microfluidic diagnostic device ( | 12-01-2011 |