Patent application number | Description | Published |
20090004833 | METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE - A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer. | 01-01-2009 |
20100112791 | METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE - A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer. | 05-06-2010 |
20110108905 | NONVOLATILE SEMICONDUCTOR MEMORY - A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells. | 05-12-2011 |
20120181598 | NONVOLATILE SEMICONDUCTOR MEMORY - A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells. | 07-19-2012 |
Patent application number | Description | Published |
20120194100 | LIGHTING DEVICE AND LUMINAIRE - According to one embodiment, a lighting device includes a lighting circuit, a lighting time measuring circuit, an initial illuminance correction control circuit and a dimming control circuit. The lighting circuit lights an illumination lamp. The lighting time measuring circuit counts a lighting time of the illumination lamp. The initial illuminance correction control circuit performs initial illuminance correction control of the lighting circuit according to the lighting time counted by the lighting time measuring circuit, and controls light output of the illumination lamp to be constant during life of the illumination lamp. The dimming control circuit performs dimming lighting control of the lighting circuit according to a dimming signal. | 08-02-2012 |
20120217899 | LIGHTING DEVICE AND LUMINAIRE - According to one embodiment, a lighting device includes a control circuit that includes a threshold for a case where a pair of the illumination lamps are connected in series between a positive output end and a negative output end of a power supply circuit, and a threshold for a case where one illumination lamp is connected between the positive output end and the negative output end of the power supply circuit. The control circuit determines the connected lamp number of the illumination lamps to a direct-current power supply device based on a voltage between the positive output end and the negative output end of the power supply circuit and a voltage between a non-potential connection end and the positive output end or the negative output end, and selects the threshold corresponding to the connected lamp number to control the direct-current power supply device. | 08-30-2012 |
20130285563 | Power Supply Device, Luminaire, Control Method for the Power Supply Device, and Control Method for the Luminaire - According to one embodiment, a control circuit detects power supply voltages converted by switching elements for conversion and subjects the switching elements for conversion to feedback control. The control circuit subjects all of a switching element for power factor improvement and a plurality of the switching elements for conversion to switching control at different switching frequencies. | 10-31-2013 |