Patent application number | Description | Published |
20080302762 | Method for Analyzing Quartz Member - A disclosed method of analyzing a quartz member includes steps of supplying an etchant to an etchant receiving portion formed concavely in the quartz member so as to etch the quartz member; and analyzing the etchant used in the supplying step. | 12-11-2008 |
20090113991 | APPARATUS AND METHOD FOR MEASURING THE CONCENTRATION OF ORGANIC GAS - In a measuring apparatus, an atmosphere to be inspected taken out from a space to be inspected in a processing system is analyzed for organic gas concentration. The apparatus is provided with a collector having an approach connected to the space to be inspected. The collector is connected to a gas exhaust system and an adsorption material for preparing a captured organic gas is held in the collector. A temperature control mechanism including a heater controls the adsorption/desorption of organic gas through temperature control of the adsorption material. A carrier gas is supplied from a carrier gas supplying system in order to transfer the desorbed gas taken from the captured organic gas and the concentration of organic gas in the carrier gas transferring the desorbed gas is determined in a concentration measuring unit. | 05-07-2009 |
20090206255 | SUBSTRATE INSPECTION DEVICE AND SUBSTRATE INSPECTION METHOD - Provided is a substrate inspection apparatus for inspecting defects of a pattern formed on a laminated structure on a substrate. The laminated structure includes a first and a second layer sequentially formed on the substrate, which have different compositions from each other. The substrate inspection apparatus includes: an electron emission unit for irradiating primary electrons onto the substrate; an electron detection unit for detecting secondary electrons generated by irradiating the primary electrons; a data processing unit for processing data of the secondary electrons detected by the electron detection unit; and a voltage control unit for controlling an acceleration voltage of the primary electrons. The voltage control unit controls the acceleration voltage such that the primary electrons irradiated to the exposed second layer arrive at the inside of the first layer or the second layer other than near an interface of the first layer and the second layer. | 08-20-2009 |
20100245812 | DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS - Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which secondary inspection is to be performed are selected from the regions. One or more defects are detected by performing the secondary inspection using an electron beam on the selected regions. | 09-30-2010 |
20120031339 | DEPOSITION HEAD AND FILM FORMING APPARATUS - There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing. | 02-09-2012 |
20120094014 | VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD - There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit. | 04-19-2012 |
20140299870 | ORGANIC TRANSISTOR AND METHOD FOR MANUFACTURING SAME - A method for manufacturing an organic transistor includes laminating a base insulating layer on a substrate; forming source/drain electrodes on the base insulating layer; laminating an organic semiconductor layer to cover the electrodes and be in contact with the base insulating layer; laminating a gate insulating layer on the organic semiconductor layer; forming a gate electrode on the gate insulating layer; and performing, before the organic semiconductor layer is formed, surface treatment on the surface of the base insulating layer which is in contact with the organic semiconductor layer. The surface treatment is performed such that, when W1 represents the work of adhesion between two laminated layers using the same material of the organic semiconductor layer, the work of adhesion W2 between the base insulating layer and the organic semiconductor layer when the organic semiconductor layer is formed on the surface-treated base insulating layer satisfies the relationship W1≧W2. | 10-09-2014 |
Patent application number | Description | Published |
20100015791 | SUPPLY APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD - A film of uniform thickness can be formed on the entire surface of a substrate. A processing solution supply apparatus includes: a nozzle provided with a supply hole for discharging a plating solution toward a processing surface of a substrate held in a substantially horizontal direction; a temperature controller for accommodating therein the plating solution in an amount necessary for processing a preset number of substrates, for controlling a temperature of the accommodated plating solution up to a preset temperature; a heat insulator disposed between the nozzle and the temperature controller, for maintaining the plating solution, whose temperature has been controlled by the temperature controller, at the preset temperature; and a transporting mechanism for transporting the plating solution, whose temperature has been controlled up to the preset temperature by the temperature controller, toward the supply hole of the nozzle via the heat insulator. | 01-21-2010 |
20100062159 | CAP METAL FORMING METHOD - A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions. | 03-11-2010 |
20100075027 | CAP METAL FORMING METHOD - A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate. | 03-25-2010 |