Patent application number | Description | Published |
20100209670 | SHEET FOR PHOTOSEMICONDUCTOR ENCAPSULATION - The present invention relates to a sheet for photosemiconductor encapsulation having a release sheet and an encapsulating resin layer laminated thereon, in which the release sheet contains a concave-convex portion-forming layer having a concave shape and/or a convex shape, at an interface with the encapsulating resin layer, and the encapsulating resin layer has a convex shape fitted to the concave shape of the release sheet and/or a concave shape fitted to the convex shape of the release sheet at an interface with the release sheet. | 08-19-2010 |
20110046320 | COMPOSITION FOR THERMOSETTING SILICONE RESIN - The present invention relates to a composition for thermosetting silicone resin including: (1) a dual-end silanol type silicone resin represented by formula (I) in which R | 02-24-2011 |
20110210371 | COMPOSITION FOR THERMOSETTING SILICONE RESIN - The present invention relates to a composition for a thermosetting silicone resin including: (1) a dual-end silanol type silicone oil; (2) an alkenyl-containing silicon compound; (3) an organohydrogensiloxane; (4) a condensation catalyst; and (5) a hydrosilylation catalyst, in which the (4) condensation catalyst includes a tin complex compound. | 09-01-2011 |
20110301276 | COMPOSITION FOR THERMOSETTING SILICONE RESIN - The present invention relates to a composition for a thermosetting silicone resin, including: (1) an organopolysiloxane having a silanol group at an end thereof; (2) an alkenyl group-containing silicon compound; (3) an epoxy group-containing silicon compound; (4) an organohydrogensiloxane; (5) a condensation catalyst; (6) a hydrosilylation catalyst; and (7) a silica particle, in which the (7) silica particle has a 50% volume cumulative diameter of from 2 to 50 μm, a content of particles having a particle size of 1 μm or less of 15% by number or less and a content of particles having a particle size of 60 μm or more of 15% by number or less. | 12-08-2011 |
20120256220 | ENCAPSULATING SHEET, LIGHT EMITTING DIODE DEVICE, AND A METHOD FOR PRODUCING THE SAME - An encapsulating sheet is stuck to a substrate mounted with a light emitting diode to encapsulate the light emitting diode. The encapsulating sheet includes an encapsulating material layer in which an embedding region is defined, the embedding region for embedding the light emitting diode from one side surface of the encapsulating material layer; a first phosphor layer laminated on the other side surface of the encapsulating material layer; and a second phosphor layer laminated on one side surface of the encapsulating material layer so as to be spaced apart from the embedding region. | 10-11-2012 |
20130032852 | SILICONE RESIN COMPOSITION, ENCAPSULATING MATERIAL, AND LIGHT EMITTING DIODE DEVICE - A silicone resin composition contains a silicon-containing component including a silicon atom to which a monovalent hydrocarbon group selected from a saturated hydrocarbon group and an aromatic hydrocarbon group is bonded and a silicon atom to which an alkenyl group is bonded. The number of moles of alkenyl group per 1 g of the silicon-containing component is 200 to 2000 μmol/g. | 02-07-2013 |
20130092974 | SILICONE RESIN SHEET, CURED SHEET, AND LIGHT EMITTING DIODE DEVICE AND PRODUCING METHOD THEREOF - A silicone resin sheet is formed from a resin composition containing a thermosetting silicone resin and microparticles. The complex viscosity thereof at a frequency of 10 Hz is 80 to 1000 Pa·s and the tan δ thereof at a frequency of 10 Hz is 0.3 to 1.6 obtained by a dynamic viscoelastic measurement at a frequency of 0.1 to 50 Hz at 30° C.; a rate of frequency increase of 10 Hz/min; and a distortion of 1% in a shear mode. | 04-18-2013 |
20130105997 | SILICONE RESIN COMPOSITION, SILICONE RESIN SHEET, OPTICAL SEMICONDUCTOR ELEMENT DEVICE, AND PRODUCING METHOD OF SILICONE RESIN SHEET | 05-02-2013 |
20130256717 | SEMICONDUCTOR BOARD, SEMICONDUCTOR DEVICE, AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor board includes a circuit board to which external electric power is supplied; a plurality of semiconductor elements which are supported on the circuit board; and a plurality of wires each of which is provided corresponding to each of a plurality of the semiconductor elements and each of which has one end electrically connected to the semiconductor element and the other end electrically connected to the circuit board. A plurality of the wires extend along a radial direction of a phantom circle having a center on the circuit board. | 10-03-2013 |
20140001656 | ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, AND SEMICONDUCTOR DEVICE | 01-02-2014 |
20140001657 | ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, AND SEMICONDUCTOR DEVICE | 01-02-2014 |
20140001948 | REFLECTING LAYER-PHOSPHOR LAYER-COVERED LED, PRODUCING METHOD THEREOF, LED DEVICE, AND PRODUCING METHOD THEREOF | 01-02-2014 |
20140001949 | PHOSPHOR LAYER-COVERED LED, PRODUCING METHOD THEREOF, AND LED DEVICE | 01-02-2014 |
20140178678 | ENCAPSULATING SHEET - An encapsulating sheet, for encapsulating an optical semiconductor element, includes an embedding layer for embedding the optical semiconductor element and a gas barrier layer provided at one side in a thickness direction of the embedding layer, having a thickness of 50 μm or more and 1,000 μm or less, and for suppressing the passing of a gas in the thickness direction. | 06-26-2014 |
20140367729 | ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, AND SEMICONDUCTOR DEVICE - A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer. | 12-18-2014 |