Patent application number | Description | Published |
20100181612 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a through-hole extending in a stacking direction in the stacked body; etching a portion of the interlayer insulating film facing the through-hole via the through-hole to remove the portion; forming a removed portion; forming a first insulating film on inner faces of the through-hole and the portion in which the interlayer insulating films are removed; forming a floating gate electrode in the portion in which the interlayer insulating films are removed; forming a second insulating film so as to cover a portion of the floating gate electrode facing the through-hole; and burying a semiconductor pillar in the through-hole. | 07-22-2010 |
20100200906 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device includes: a semiconductor substrate; a multilayer structure; a semiconductor pillar; a third insulating film; and a fourth insulating film layer. The a multilayer structure is provided on the semiconductor substrate and including a plurality of constituent multilayer bodies stacked in a first direction perpendicular to a major surface of the semiconductor substrate. Each of the plurality of constituent multilayer bodies includes an electrode film provided parallel to the major surface, a first insulating film, a charge storage layer provided between the electrode film and the first insulating film, and a second insulating film provided between the charge storage layer and the electrode film. The semiconductor pillar penetrates through the multilayer structure in the first direction. The third insulating film is provided between the semiconductor pillar and the electrode film. The fourth insulating film is provided between the semiconductor pillar and the charge storage layer. | 08-12-2010 |
20100207194 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate, the stacked body having electrode films and insulating films being alternately stacked; a first and second semiconductor pillars; and a first and second charge storage layers. The first and second semiconductor pillars are provided inside a through hole penetrating through the stacked body in a stacking direction of the stacked body. The through hole has a cross section of an oblate circle, when cutting in a direction perpendicular to the stacking direction. The first and second semiconductor pillars face each other in a major axis direction of the first oblate circle. The first and second semiconductor pillars extend in the stacking direction. The first and second charge storage layers are provided between the electrode film and the first and second semiconductor pillars, respectively. | 08-19-2010 |
20100224928 | METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A method for manufacturing a nonvolatile semiconductor memory device, the device including a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction and a semiconductor pillar piercing the stacked structural unit in the first direction, the method includes: forming a stacked unit including a core material film alternately stacked with a sacrificial film on a major surface of a substrate perpendicular to the first direction; making a trench in the stacked unit, the trench extending in the first direction and a second direction in a plane perpendicular to the first direction; filling a filling material into the trench; removing the sacrificial film to form a hollow structural unit, the hollow structural unit including a post unit supporting the core material film on the substrate, the post unit being made of the filling material; and forming the stacked structural unit by stacking one of the insulating films and one of the electrode films on a surface of the core material film exposed by removing the sacrificial film. | 09-09-2010 |
20100244119 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit. | 09-30-2010 |
20100244186 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of stacked component units stacked in a first direction, each of the stacked component units including a first conducting film made of a semiconductor of a first conductivity type provided perpendicular to the first direction and a first insulating film stacked in the first direction with the first conducting film; a semiconductor pillar piercing the stacked structural unit in the first direction and including a conducting region of a second conductivity type, the semiconductor pillar including a first region opposing each of the first conducting films, and a second region provided between the first regions with respect to the first direction, the second region having a resistance different from a resistance of the first region; and a second insulating film provided between the semiconductor pillar and the first conducting film. | 09-30-2010 |
20100265770 | NONVOLATILE SEMICONDUCTOR MEMORY - A nonvolatile semiconductor memory comprising: a first semiconductor layer having a first stripe-shaped region and a second stripe-shaped region which is adjacent to the first stripe-shaped region; a first NAND string formed on the first stripe-shaped region, the first NAND string having a plurality of first memory cell transistors connected in series; a first insulating film formed above the second stripe-shaped region; a second semiconductor layer formed on the first insulating film; and a second NAND string formed on the second semiconductor layer, the second NAND string having a plurality of second memory cell transistors connected in series. | 10-21-2010 |
20100320526 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device includes: a semiconductor substrate; a memory unit; and a circuit unit provided between the semiconductor substrate and the memory unit. The memory unit includes: a stacked structural unit having electrode films alternately stacked with inter-electrode-film insulating films; a semiconductor pillar piercing the stacked structural unit; and a storage unit provided corresponding to an intersection between the electrode films and the semiconductor pillar. The circuit unit includes first and second transistors having different conductivity type, a first interconnect, and first and second contact plugs. The first interconnect includes silicide provided on a side of the first and second transistors opposite to the semiconductor substrate. The first contact plug made of polysilicon of the first conductivity type connects the first interconnect to the first transistor. The second contact plug made of polysilicon of the second conductivity type connects the first interconnect to the second transistor. | 12-23-2010 |
20100327339 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor memory device provided with a cell array section and a peripheral circuit section, the device includes: a back gate electrode; a stacked body provided on the back gate electrode; a plurality of semiconductor pillars extending in a stacking direction; connection members, each of the connection members connecting one of the semiconductor pillars to another one of the semiconductor pillars; a back-gate electrode contact applying a potential to the back gate electrode; a gate electrode provided in the peripheral circuit section; and a gate electrode contact applying a potential to the gate electrode, the back gate electrode and the gate electrode respectively including: a lower semiconductor layer; a conductive layer provided on the lower semiconductor layer; and an upper semiconductor layer provided on the conductive layer, the connection members being provided in or on the upper semiconductor layer, the back-gate electrode contact and the gate electrode contact being in contact with the conductive layer. | 12-30-2010 |
20100327340 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structural unit, a semiconductor pillar, a memory layer, an inner insulating film, an outer insulating film and a cap insulating film. The unit includes a plurality of electrode films stacked alternately in a first direction with a plurality of inter-electrode insulating films. The pillar pierces the stacked structural unit in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The inner insulating film is provided between the memory layer and the semiconductor pillar. The outer insulating film is provided between the memory layer and the electrode films. The cap insulating film is provided between the outer insulating film and the electrode films, and the cap insulating film has a higher relative dielectric constant than the outer insulating film. | 12-30-2010 |
20110002172 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes: a memory unit; and a control unit. The memory unit includes a multilayer structure including electrode films and inter-electrode insulating films alternately stacked in a first direction; a semiconductor pillar piercing the multilayer structure in the first direction; a memory layer provided between the semiconductor pillar and the electrode films; a inner insulating film provided between the memory layer and the semiconductor pillar; a outer insulating film provided between the memory layer and the electrode films; and a wiring electrically connected to the first semiconductor pillar. In erasing operation, the control unit sets the first wiring at a first potential and sets the electrode film at a second potential lower than the first potential, and then sets the first wiring at a third potential and sets the electrode film at a fourth potential higher than the third potential. | 01-06-2011 |
20110018050 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device, includes: a stacked structural unit including electrode films alternately stacked with inter-electrode insulating films; first and second semiconductor pillars piercing the stacked structural unit; a connection portion semiconductor layer electrically connect the first and second semiconductor pillars; a connection portion conductive layer provided to oppose the connection portion semiconductor layer; a memory layer and an inner insulating film provided between the first and semiconductor pillars and each of the electrode films, and between the connection portion conductive layer and the connection portion semiconductor layer; an outer insulating film provided between the memory layer and each of the electrode films; and a connection portion outer insulating film provided between the memory layer and the connection portion conductive layer. The connection portion outer insulating film has a film thickness thicker than a film thickness of the outer insulating film. | 01-27-2011 |
20110018052 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a semiconductor pillar, a memory layer and an outer insulating film. The stacked structure includes a plurality of electrode films and a plurality of interelectrode insulating films alternately stacked in a first direction. The semiconductor pillar pierces the stacked structure in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The outer insulating film is provided between the electrode films and the memory layer. The device includes a first region and a second region. An outer diameter of the outer insulating film along a second direction perpendicular to the first direction in the first region is larger than that in the second region. A thickness of the outer insulating film along the second direction in the first region is thicker than that in the second region. | 01-27-2011 |
20110031550 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device includes: a stacked structural unit including a plurality of electrode films and a plurality of inter-electrode insulating films alternately stacked in a first direction; a first selection gate electrode stacked on the stacked structural unit in the first direction; a first semiconductor pillar piercing the stacked structural unit and the first selection gate electrode in the first direction; a first memory unit provided at an intersection of each of the electrode films and the first semiconductor pillar; and a first selection gate insulating film provided between the first semiconductor pillar and the first selection gate electrode, the first selection gate electrode including a first silicide layer provided on a face of the first selection gate electrode perpendicular to the first direction. | 02-10-2011 |
20110051527 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes: a memory unit; and a control unit. The memory unit includes: first and second memory strings including first and second memory transistors with first and second select gates, respectively; and first and second wirings connected thereto. In a selective erase operation of a selected cell transistor of the first memory transistors, the control unit applies V | 03-03-2011 |
20110063914 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes: a memory unit; and a control unit. The memory unit includes: a multilayer structure including electrode films and interelectrode insulating films alternately stacked; a semiconductor pillar piercing the multilayer structure; insulating films and a memory layer provided between the electrode films and the semiconductor pillar; and a wiring connected to the semiconductor pillar. In an erase operation, the control unit performs: a first operation setting the wiring at a first potential and the electrode film at a second potential lower than the first potential during a first period; and a second operation setting the wiring at a third potential and the electrode film at a fourth potential lower than the third potential during a second period after the first operation. A length of the second period is shorter than the first period, and/or a difference between the third and fourth potentials is smaller than a difference between the first and second potentials. | 03-17-2011 |
20110103149 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a control circuit. The memory cell array includes a stacked body, a through-hole, a semiconductor pillar, and a charge storage film. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. The through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in the through-hole. The charge storage film is provided between the electrode films and the semiconductor pillar. Memory cells are formed at each intersection between the electrode films and the semiconductor pillar. The control circuit writs a first value to at least some of the memory cells, performs an erasing operation of the first value from the memory cell written with the first value, reads data stored in the memory cell having undergone the erasing operation, and sets the memory cell to be unusable in a case that the first value is read from the memory cell. | 05-05-2011 |
20110103153 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases. | 05-05-2011 |
20110216604 | METHOD FOR OPERATING SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a method is disclosed for operating a semiconductor memory device. The semiconductor memory device includes a substrate, a stacked body, a memory film, a channel body, a select transistor, and a wiring. The method can boost a potential of the channel body by applying a first erase potential to the wiring, the select gate, and the word electrode layer. In addition, after the boosting of the potential of the channel body, with the wiring and the select gate maintained at the first erase potential, the method can decrease a potential of the word electrode layer to a second erase potential lower than the first erase potential. | 09-08-2011 |
20120026775 | METHOD OF OPERATING SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a method of operating a semiconductor memory device is disclosed. The method can include storing read-only data in at least one selected from a memory cell of an uppermost layer and a memory cell of a lowermost layer of a plurality of memory cells connected in series via a channel body. The channel body extends upward from a substrate to intersect a plurality of electrode layers stacked on the substrate. The method can include prohibiting a data erase operation of the read-only memory cell having the read-only data stored in the read-only memory cell. | 02-02-2012 |
20120043599 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a first and a second stacked structure, a first and a second semiconductor pillar, a semiconductor connection portion, a first and a second connection portion conductive layer, a first and a second pillar portion memory layer, a first and a second connection portion memory layer. The first and second stacked structures include electrode films and inter-electrode insulating films alternately stacked in a first direction. The second stacked structure is adjacent to the first stacked structure. The first and second semiconductor pillars pierce the first and second stacked structures, respectively. The semiconductor connection portion connects the first and second semiconductor pillars. The first and second pillar portion memory layers are provided between the electrode films and the semiconductor pillar. The first and second connection portion memory layers are provided between the connection portion conductive layers and the semiconductor connection portion. | 02-23-2012 |
20130121081 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a memory unit and a control unit. The memory unit includes a multilayer structure including electrode films and inter-electrode insulating films alternately stacked in a first direction; a semiconductor pillar piercing the multilayer structure in the first direction; a memory layer provided between the semiconductor pillar and the electrode films; an inner insulating film provided between the memory layer and the semiconductor pillar; an outer insulating film provided between the memory layer and the electrode films; and a wiring electrically connected to the first semiconductor pillar. In an erasing operation, the control unit sets the first wiring at a first potential and sets the electrode film at a second potential lower than the first potential, and then sets the first wiring at a third potential and sets the electrode film at a fourth potential higher than the third potential. | 05-16-2013 |
20130223149 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a through-hole extending in a stacking direction in the stacked body; etching a portion of the interlayer insulating film facing the through-hole via the through-hole to remove the portion; forming a removed portion; forming a first insulating film on inner faces of the through-hole and the portion in which the interlayer insulating films are removed; forming a floating gate electrode in the portion in which the interlayer insulating films are removed; forming a second insulating film so as to cover a portion of the floating gate electrode facing the through-hole; and burying a semiconductor pillar in the through-hole. | 08-29-2013 |
20130228850 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate, the stacked body having electrode films and insulating films being alternately stacked; a first and second semiconductor pillars; and a first and second charge storage layers. The first and second semiconductor pillars are provided inside a through hole penetrating through the stacked body in a stacking direction of the stacked body. The through hole has a cross section of an oblate circle, when cutting in a direction perpendicular to the stacking direction. The first and second semiconductor pillars face each other in a major axis direction of the first oblate circle. The first and second semiconductor pillars extend in the stacking direction. The first and second charge storage layers are provided between the electrode film and the first and second semiconductor pillars, respectively. | 09-05-2013 |
20130292758 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structural unit, a semiconductor pillar, a memory layer, an inner insulating film, an outer insulating film and a cap insulating film. The unit includes a plurality of electrode films stacked alternately in a first direction with a plurality of inter-electrode insulating films. The pillar pierces the stacked structural unit in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The inner insulating film is provided between the memory layer and the semiconductor pillar. The outer insulating film is provided between the memory layer and the electrode films. The cap insulating film is provided between the outer insulating film and the electrode films, and the cap insulating film has a higher relative dielectric constant than the outer insulating film. | 11-07-2013 |
20140117434 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit. | 05-01-2014 |