Patent application number | Description | Published |
20090214980 | Melts - A light-attenuating composition and method of using it are described. The light-attenuating composition may be selectively applied to a radiant energy sensitive material on the substrate. Actinic radiation applied to the composite chemically changes portions of the radiant energy sensitive material not covered by the light-attenuating composition. The light-attenuating composition attenuates light in at least the UV range and is water-soluble or water-dispersible. | 08-27-2009 |
20100029077 | Inhibiting background plating - Methods include selectively depositing a phase change resist having high light transmittance onto a dielectric to form a pattern, etching away portions of the dielectric not covered by the resist and depositing a metal seed layer on the etched portions of the dielectric. A metal layer is then deposited on the metal seed layer by light induced plating. | 02-04-2010 |
20100248494 | Method of cleaning semiconductor wafers - A method of cleaning semiconductor wafers using an acid cleaner followed by an alkaline cleaner to clean contaminants from the materials is provided. The acid cleaner removes substantially all of the metal contaminants while the alkaline cleaner removes substantially all of the non-metal contaminants, such as organics and particulate material. | 09-30-2010 |
20110081742 | TEXTURING SEMICONDUCTOR SUBSTRATES - Semiconductors are textured with aqueous solutions containing non-volatile alkoxylated glycols, their ethers and ether acetate derivatives having molecular weights of 170 or greater and flash points of 75° C. or greater. The textured semiconductors can be used in the manufacture of photovoltaic devices. | 04-07-2011 |
20110086314 | MELTS - A light-attenuating composition and method of using it are described. The light-attenuating composition may be selectively applied to a radiant energy sensitive material on the substrate. Actinic radiation applied to the composite chemically changes portions of the radiant energy sensitive material not covered by the light-attenuating composition. The light-attenuating composition attenuates light in at least the UV range and is water-soluble or water-dispersible. | 04-14-2011 |
20110151671 | METHOD OF TEXTURING SEMICONDUCTOR SUBSTRATES - Semiconductor substrates are cleaned and subsequently oxidized. After the semiconductor is oxidized it is textured to reduce incident light reflectance. The textured semiconductors can be used in the manufacture of photovoltaic devices. | 06-23-2011 |
20110250762 | METHOD OF CLEANING AND MICRO-ETCHING SEMICONDUCTOR WAFERS - A method of simultaneously cleaning inorganic and organic contaminants from semiconductor wafers and micro-etching the semiconductor wafers. After the semiconductor wafers are cut or sliced from ingots, they are contaminated with cutting fluid as well as metal and metal oxides from the saws used in the cutting process. Aqueous alkaline cleaning and micro-etching solutions containing alkaline compounds and mid-range alkoxylates are used to simultaneously clean and micro-etch the semiconductor wafers. | 10-13-2011 |
20110287634 | METHOD OF FORMING CURRENT TRACKS ON SEMICONDUCTORS - Methods of making current tracks for semiconductors are disclosed. The methods involve selectively depositing a hot melt ink resist containing rosin resins and waxes on a silicon dioxide or silicon nitride layer coating a semiconductor followed by etching uncoated portions of the silicon dioxide or silicon nitride layer with an inorganic acid etch to expose the semiconductor and simultaneously inhibit undercutting of the hot melt ink resist. The etched portions may then be metallizaed to form a plurality of substantially uniform current tracks. | 11-24-2011 |
20120070992 | METHOD OF STRIPPING HOT MELT ETCH RESISTS FROM SEMICONDUCTORS - Hot melt etch resist is selectively applied to an anti-reflective coating or a selective emitter on a semiconductor wafer. The exposed portions of the anti-reflective coating or selective emitter are etched away using an inorganic acid containing etch to expose the semiconductor surface. The hot melt etch resist is then stripped from the semiconductor with an alkaline stripper which does not compromise the electrical integrity of the semiconductor. The exposed semiconductor is then metalized to form current tracks. | 03-22-2012 |
20120267627 | POLYCRYSTALLINE TEXTURING COMPOSITION AND METHOD - An aqueous acidic composition which includes alkaline compounds, fluoride ions and oxidizing agents is provided for texturing polycrystalline semiconductors. Methods for texturing are also disclosed. The textured polycrystalline semiconductors have reduced reflectance of light incidence. | 10-25-2012 |
20140004701 | TEXTURING OF MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATES TO REDUCE INCIDENT LIGHT REFLECTANCE | 01-02-2014 |
20140051248 | INKJET PRINTABLE ETCH RESIST - The methods involve selectively depositing a resist containing a solid hydrogenated rosin resin and a liquid hydrogenated rosin resin ester as a mixture on a semiconductor followed by etching uncoated portions of the semiconductor and simultaneously inhibiting undercutting of the resist. The etched portions may then be metallized to form current tracks. | 02-20-2014 |
20140065836 | TEXTURING OF MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATES TO REDUCE INCIDENT LIGHT REFLECTANCE - Monocrystalline semiconductor substrates are textured with alkaline solutions to form pyramid structures on their surfaces to reduce incident light reflectance and improve light absorption of the wafers. The alkaline baths include hydantoin compounds and derivatives thereof in combination with alkoxylated glycols to inhibit the formation of flat areas between pyramid structures to improve the light absorption. | 03-06-2014 |
20140284529 | TEXTURING OF MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATES TO REDUCE INCIDENT LIGHT REFLECTANCE - Monocrystalline semiconductor substrates are textured with alkaline solutions to form pyramid structures on their surfaces to reduce incident light reflectance and improve light absorption of the wafers. The alkaline baths include hydantoin compounds and derivatives thereof in combination with alkoxylated glycols to inhibit the formation of flat areas between pyramid structures to improve the light absorption. | 09-25-2014 |
20150053643 | HOT MELT COMPOSITIONS WITH IMPROVED ETCH RESISTANCE - Hot melt compositions include non-aromatic cyclic (alkyl)acrylates and low acid number waxes. Upon application of actinic radiation, the hot melt compositions cure to form resists. They may be stripped from substrates with high alkaline strippers. The hot melt compositions may be used in the manufacture of printed circuit boards and photovoltaic devices. | 02-26-2015 |