Patent application number | Description | Published |
20080247072 | MAGNETIC TUNNEL JUNCTION MAGNETIC MEMORY - This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: | 10-09-2008 |
20090147392 | MAGNETIC ELEMENT WITH THERMALLY-ASSISTED WRITING - This magnetic element with thermally-assisted writing using a field or spin transfer comprises a magnetic reference layer referred to as the “trapped layer”, the magnetisation of which is in a fixed direction; a magnetic storage layer called the “free layer” having a variable magnetisation direction and consisting of a layer made of a ferromagnetic material with magnetisation in the plane of the layer and magnetically coupled to a magnetisation-trapping layer made of an antiferromagnetic material; a semiconductor or an insulating layer with confined-current-paths sandwiched between the reference layer and the storage layer. At least one bilayer consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer is placed in the storage layer between ferromagnetic layer which is in contact with the semiconductor or insulating layer with confined-current-paths and antiferromagnetic layer. | 06-11-2009 |
20110007560 | SPIN POLARISED MAGNETIC DEVICE - A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer. | 01-13-2011 |
20120181642 | MAGNETIC TUNNEL JUNCTION COMPRISING A POLARIZING LAYER - The present disclosure concerns memory device comprising magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization; the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%. Also disclosed is a method of forming the MRAM cell. | 07-19-2012 |
20130182499 | MRAM Cell and Method for Writing to the MRAM Cell using a Thermally Assisted Write Operation with a Reduced Field Current - The present disclosure concerns a method for writing to a MRAM cell comprising a magnetic tunnel junction formed from a storage layer having a storage magnetization; a reference layer having a reference magnetization; and a tunnel barrier layer included between the sense and storage layers; and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction for heating the magnetic tunnel junction; passing a field current for switching the storage magnetization in a written direction in accordance with the polarity of the field current. The magnitude of the heating current is such that it acts as a spin polarized current and can adjust the storage magnetization; and the polarity of the heating current is such as to adjust the storage magnetization substantially towards said written direction. | 07-18-2013 |
20130250671 | THERMALLY ASSISTED MAGNETIC WRITING DEVICE - A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer. | 09-26-2013 |
20140016405 | THERMALLY ASSISTED MAGNETIC WRITING DEVICE - A magnetic thermally-assisted switching device includes a reference layer, a storage layer magnetised along a variable direction, a spacer that separates the reference layer and the storage layer, and magnetically decouples them, a device for heating the pinning layer so that, during heating, the temperature of the pinning layer exceeds its blocking temperature such that the direction of magnetisation of the storage layer is no longer pinned, a device for applying a writing magnetic torque tending to align the magnetisation of the storage layer along one of two stable magnetisation directions once the blocking temperature is reached. The device also includes a device for applying a magnetic polarisation field at least during the heating phase before the blocking temperature is reached such that the direction of magnetisation of the storage layer is always along the direction of the magnetic polarisation field at the moment that the blocking temperature is reached. | 01-16-2014 |
20150179245 | METHOD FOR WRITING TO A RANDOM ACCESS MEMORY (MRAM) CELL WITH IMPROVED MRAM CELL LIFESPAN - Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell. | 06-25-2015 |