Patent application number | Description | Published |
20080198681 | MULTIPLE PORT MEMORY WITH PRIORITIZED WORD LINE DRIVER AND METHOD THEREOF - A multiple port memory has a word line driver that provides a word line signal to access a first write port of a multiple port memory cell in an array of multiple port memory cells during a write operation. A first logic circuit has a first input for receiving a first port selection signal, a second input for receiving a disable signal, and an output. A buffer circuit has an input coupled to the output of the first logic circuit, and an output for providing the word line signal. The disable signal is asserted to prevent the word line driver from accessing the first write port when a second write port of the multiple port memory cell is accessed during the write operation and the second write port has a higher priority than the first write port. | 08-21-2008 |
20080222361 | PIPELINED TAG AND INFORMATION ARRAY ACCESS WITH SPECULATIVE RETRIEVAL OF TAG THAT CORRESPONDS TO INFORMATION ACCESS - A cache design is described in which corresponding accesses to tag and information arrays are phased in time, and in which tags are retrieved (typically speculatively) from a tag array without benefit of an effective address calculation subsequently used for a corresponding retrieval from an information array. In some exploitations, such a design may allow cycle times (and throughput) of a memory subsystem to more closely match demands of some processor and computation system architectures. In some cases, phased access can be described as pipelined tag and information array access, though strictly speaking, indexing into the information array need not depend on results of the tag array access. Our techniques seek to allow early (indeed speculative) retrieval from the tag array without delays that would otherwise be associated with calculation of an effective address eventually employed for a corresponding retrieval from the information array. Speculation can be resolved using the eventually calculated effective address or using separate functionality. In some embodiments, we use calculated effective addresses for way selection based on tags retrieved from the tag array. | 09-11-2008 |
20080291768 | BITCELL WITH VARIABLE-CONDUCTANCE TRANSFER GATE AND METHOD THEREOF - A memory device comprises a bit cell comprising a bit storage device, a first word line, a second word line, and a first transfer gate to connect the bit storage device to a bit line. The first transfer gate is configurable to at least four conductance states based on a state of the first word line and a state of the second word line. The memory device further comprises control logic to configure, for an access to the bit cell, the state of the first word line and the state of the second word line based on an access type of the access. | 11-27-2008 |
20090237135 | SCHMITT TRIGGER HAVING VARIABLE HYSTERESIS AND METHOD THEREFOR - A Schmitt trigger has a first inverter, a second inverter, a bias means, and a transistor. The inverter has an input and an output. The second inverter has an input coupled to the output of the first inverter and has an output. The bias means provides a first bias voltage on a first output terminal. A magnitude of the bias voltage is selectable by a first input signal. The transistor has a first current electrode coupled to a first power supply terminal, a control electrode coupled to the output of the second inverter, a second current electrode coupled to the output of the first inverter, and a body coupled to the first output terminal. Selectability of the magnitude of the bias voltage provides selectability of the hysteresis of the Schmitt trigger. | 09-24-2009 |
20100207687 | CIRCUIT FOR A LOW POWER MODE - A circuit has a first transistor having a first current electrode coupled to a first supply voltage terminal and a second current electrode coupled to a virtual supply voltage node. A second transistor has a first current electrode coupled to the first supply voltage terminal and a control electrode coupled to the virtual supply voltage node. A first load has an input and has an output coupled to a second current electrode of the second transistor. A third transistor has a control electrode coupled to the output of the first load. A second load has an input coupled to the first supply voltage terminal, and has an output that is coupled to both a control electrode of the first transistor and a first current electrode of the third transistor. The virtual supply voltage node provides an operating voltage to a circuit module that alternates between normal and drowsy operating modes. | 08-19-2010 |
20100283445 | INTEGRATED CIRCUIT HAVING LOW POWER MODE VOLTAGE REGULATOR - A voltage regulator includes a node, circuitry, a regulating transistor, a disabling transistor, and a voltage follower stage. The circuitry is coupled to the node for providing a current to the node. The regulating transistor is coupled between the node and a first power supply voltage terminal. The disabling transistor is coupled in parallel with the regulating transistor for selectively disabling the regulating transistor by directly connecting the first power supply voltage terminal to the node. The voltage follower stage is coupled between the first power supply voltage terminal and a second power supply voltage terminal. The voltage follower stage has an output connected to a control electrode of the regulating transistor, and an input connected to the node. | 11-11-2010 |
20100306302 | TECHNIQUE FOR DETERMINING IF A LOGICAL SUM OF A FIRST OPERAND AND A SECOND OPERAND IS THE SAME AS A THIRD OPERAND - A system is used to determine if a sum of a first operand and a second operand is the same as a third operand wherein a comparison to the third operand is of variable length. This is particularly useful in a content addressable memory (CAM) where the likelihood of hit is commonly improved over a set associative cache and allows for the CAM to identify different things. For example, an entry can be one length to identify a page of a memory and another entry be a different length to identify a page of memory. This is better understood by reference to the following description and the drawings. | 12-02-2010 |
20110066918 | SOFT ERROR CORRECTION IN A MEMORY ARRAY AND METHOD THEREOF - A memory system includes a memory array. The memory array includes a plurality of storage locations arranged in rows and columns. The memory system includes error correction circuitry that generates correct data bits from data bits of the memory array and error correction bits. The data bits received by the error correction circuitry are divided in subgroups where each subgroup of data bits is used to generate a subgroup of the correct data bits. The subgroups of data bits are stored in a row of the memory array at locations that are interleaved with each other. | 03-17-2011 |
20110095799 | FLIP-FLOP HAVING SHARED FEEDBACK AND METHOD OF OPERATION - A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, an inversion is enabled from the second node to a third node. An inversion from the third node to the fourth node is provided. After the enabling the inversion from the second node to the third node, the first node is decoupled from the second node. After the enabling the inversion from the second node to the third node, the second node is coupled to the third node. An inversion from the fourth node to the third node is enabled and the second node is decoupled from the fourth node. | 04-28-2011 |
20110095800 | FLIP-FLOP HAVING SHARED FEEDBACK AND METHOD OF OPERATION - A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, the second node is coupled to a third node to couple the first data signal to the third node. The first node is decoupled from the second node and a first step of latching the first data signal at the third node is performed, wherein the first step of latching is through the second node while the second node is coupled to the third node. The second node is decoupled from the third node and a second step of latching is performed wherein the first data signal latched at the third node while the second node is decoupled from the third node. | 04-28-2011 |
20110116328 | MEMORY DEVICE AND METHOD THEREOF - An array of memory bit cells are operable to provide a memory device having data shifting capability, so that data can be flexibly stored and retrieved from the memory device in both parallel and serial fashions. The memory array can thus be used for conventional memory storage operations, and also for operations, such as matrix operations, that provide for the alteration of the arrangement of stored data elements. | 05-19-2011 |
20110119672 | Multi-Core System on Chip - A multi-core system on a chip ( | 05-19-2011 |
20110181333 | STACKED TRANSISTOR DELAY CIRCUIT AND METHOD OF OPERATION - A delay circuit and method of operation has a plurality of series-connected stages including a first stage and a last stage that provides the delayed signal. Each of the series-connected stages has a plurality of series-connected transistors having an outermost transistor and an innermost transistor and one or more or none of a plurality of intervening transistors. Each of the plurality of series-connected transistors is connected in series to a respective different load stack. An input signal that is coupled to the first stage is propagated repeatedly between the first stage, intervening stages if any, and a last stage. The first stage has a signal input, one or more feedback inputs, and at least two output terminals. | 07-28-2011 |
20110191602 | PROCESSOR WITH SELECTABLE LONGEVITY - A processor and method has at least one processor core for processing information and receives an operating voltage for powering circuitry of the processor. A selector receives a value indicative of a temperature within the processor and receives a value from a plurality of possible longevity values that each indicates a predetermined desired longevity of valid operation of the processor. An output provides an identifier that controls at least one of an operating voltage or an operating frequency of the processor, wherein the identifier provided is at least based on the value indicative of temperature and the predetermined desired longevity. A reliability storage device coupled to the selector stores the value from the plurality of possible longevity values that each indicates the predetermined desired longevity of valid operation of the processor. | 08-04-2011 |
20110194325 | ERROR DETECTION IN A CONTENT ADDRESSABLE MEMORY (CAM) - A content addressable memory and method of operation uses a memory array having a plurality of rows of stored content addressable memory data and compare circuitry for comparing received comparand data with the stored content addressable memory data. A hit signal and one or more parity bits is provided for each row. Erroneous hit detection circuitry coupled to the memory array for each row generates a row error indicator in response to a comparison between parity of the comparand data and parity of a row that is correlated to the hit signal as qualified by assertion of a hit signal of that row. The erroneous hit detection circuitry uses the row error indicator for each row to provide an output which indicates whether at least one asserted hit signal corresponds to an erroneous hit. | 08-11-2011 |
20110239069 | SEQUENTIAL DIGITAL CIRCUITRY WITH TEST SCAN - A digital scan chain system having test scan has a plurality of flip-flop modules, each of the plurality of flip-flop modules having a first data bit input, a second data bit input, a test bit input, a clock input, a first data bit output, a second data bit output, and a test bit output. The test bit output of a first flip-flop module is directly connected to the test bit input of a second flip-flop module with no intervening circuitry. First and second multiplexed master/slave flip-flops are directly serially connected. A clocked latch is coupled to the output of the second multiplexed master/slave flip-flop and provides the test bit output. The clocked latch is clocked only during a test mode to save power. | 09-29-2011 |
20110265090 | MULTIPLE CORE DATA PROCESSOR WITH USAGE MONITORING - A data processor with a plurality of processor cores. Accumulated usage information of each of the plurality of processor cores is stored in a storage device within the data processor, wherein the accumulated usage information is indicative of accumulated usage of each processor core of the plurality of processor cores. Accumulated usage information for a core of the plurality of processor cores is updated in response to a determined use of the core. | 10-27-2011 |
20110296211 | DATA PROCESSOR HAVING MULTIPLE LOW POWER MODES - A processor includes a first virtual terminal, a second virtual terminal, circuitry coupled to the first virtual terminal for providing current to the first virtual terminal, a first regulating transistor coupled between the first virtual terminal and the second virtual terminal, a first disabling transistor coupled in parallel with the first regulating transistor for selectively disabling the first regulating transistor by directly connecting the second virtual terminal to the first virtual terminal, a second regulating transistor coupled between the second virtual terminal and a first power supply voltage terminal, and a second disabling transistor coupled in parallel with the second regulating transistor for selectively disabling the second regulating transistor by directly connecting the second virtual terminal to the first power supply voltage terminal. | 12-01-2011 |
20110307769 | ERROR DETECTION IN A CONTENT ADDRESSABLE MEMORY (CAM) AND METHOD OF OPERATION - A method for accessing a content addressable memory (CAM) system having a CAM and random access memory (RAM) includes providing comparand data to the CAM, comparing the comparand data to entries of the CAM to determine a matching CAM entry and asserting a match signal corresponding to the matching CAM entry. In response to asserting the match signal, the method further includes providing output data, an output parity bit, and an output complement parity bit from the RAM, using the comparand data to generate a generated parity bit, and providing an error indicator based on the generated parity bit, the output parity bit, and the output complement parity bit. The error indicator may indicate an error when the generated parity bit is not equal to the output parity bit or when the output parity bit is equal to the output complement parity bit. | 12-15-2011 |
20120030482 | DATA PROCESSING HAVING MULTIPLE LOW POWER MODES AND METHOD THEREFOR - A method is provided for operating a data processing system having a memory. The memory is coupled between a first power supply voltage terminal for receiving a first variable potential and a second power supply voltage terminal for receiving a second variable potential. An initial difference between the first variable potential and the second variable potential is not less than a first voltage. The method comprises: receiving a command to transition the data processing system from a first power supply voltage to a second power supply voltage; changing the second variable potential so that a difference between the second variable potential and the first variable potential is greater than the first voltage; and after changing the second variable potential, changing the first variable potential, wherein a difference between the first variable potential and the second variable potential is not less than the first voltage. | 02-02-2012 |
20120032655 | MULTISTAGE VOLTAGE REGULATOR CIRCUIT - A circuit including a multistage voltage regulator having a plurality of stages each including a regulated node and a bias transistor. The bias transistors and regulated nodes are configured to control the voltage of the regulated nodes. For at least some of the stages, the regulated nodes are coupled to voltage supply terminals of circuit modules of the stages. | 02-09-2012 |
20120033520 | MEMORY WITH LOW VOLTAGE MODE OPERATION - A memory comprising memory cells wherein the memory is configured to operate in a normal voltage mode and a low voltage mode. The method includes during the normal voltage mode, operating the memory cells at a first voltage across each of the memory cells. The method further includes upon transitioning from the normal voltage mode to the low voltage mode, operating the memory cells at a second voltage across each of the memory cells, wherein the second voltage is lower than the first voltage. The method further includes performing an access on a subset of the memory cells while maintaining the second voltage across the memory cells. | 02-09-2012 |
20120036398 | MULTIPLE CORE DATA PROCESSOR WITH USAGE MONITORING - A data processor with a plurality of processor cores. Accumulated usage information of each of the plurality of processor cores is stored in a storage device within the data processor, wherein the accumulated usage information is indicative of accumulated usage of each processor core of the plurality of processor cores. The processor uses the accumulated usage information in selecting processor cores to perform processor operations. | 02-09-2012 |
20120069636 | STATIC RANDOM ACCESS MEMORY (SRAM) HAVING BIT CELLS ACCESSIBLE BY SEPARATE READ AND WRITE PATHS - A method is for reading a first bit cell of a static random access memory in which the static random access memory has a first plurality of bit cells including the first bit cell. Each bit cell of the first plurality of bit cells includes a cross coupled pair of inverters for storing a logic state, optimized for being written, and powered by a read voltage during a read of the first plurality of bit cells. Each bit cell of the first plurality of bit cells is coupled to a true read bit line and a true write bit line, and a second plurality of bit cells is coupled to a complementary read bit line and a complementary write bit line. The true and complementary read bit lines are precharged to a precharge voltage of about half the read voltage. The true read bit line is predisposed to a logic low condition. One of a group consisting of a high impedance from the first bit cell to indicate that the logic state is a logic low and a signal voltage greater than the intermediate voltage to indicate that the logic state is a logic high is output from the first bit cell to the true read bit line. | 03-22-2012 |
20120195111 | In-Line Register File Bitcell - An SRAM bitcell architecture is described having a dedicated read port (N | 08-02-2012 |
20120200336 | ELECTRONIC CIRCUIT HAVING SHARED LEAKAGE CURRENT REDUCTION CIRCUITS - An electronic circuit includes a plurality of circuit blocks, a plurality of bias circuits, a switching circuit, and plurality of transistors. The plurality of circuit blocks each includes a high power terminal and a low power terminal. The switching circuit includes a plurality of switches for selectively coupling a bias circuit of the plurality of bias circuits to the low power terminal of a circuit block of the plurality of circuit blocks. Each bias circuit of the plurality of bias circuits is selectively couplable to the low power terminal of each of the plurality of circuit blocks. Each transistor of the plurality of transistors has a first current terminal coupled to a circuit ground terminal, and each transistor of the plurality of transistors has a control terminal for controlling the conductivity of the plurality of the transistors by a bias circuit of the plurality of bias circuits. | 08-09-2012 |
20120230126 | MEMORY VOLTAGE REGULATOR WITH LEAKAGE CURRENT VOLTAGE CONTROL - A voltage regulator for a memory that regulates a voltage provided to the memory cells based on a measured leakage current from a second set of memory cells. In one embodiment, based on the measured leakage current, the voltage to the cells is raised or lowered to control the amount of leakage current from the cells. | 09-13-2012 |
20120233498 | HIERARCHICAL ERROR CORRECTION FOR LARGE MEMORIES - A mechanism is provided for detecting and correcting a first number of bit errors in a segment of data stored in a memory region being read, while concurrently detecting the presence of higher numbers of bit errors in that segment of data. In the event of detection of a higher number of bit errors in any single segment of data of the memory region, error correction of that higher number of bit errors is performed on the memory region, while concurrently detecting the presence of an even higher level of bit errors. By performing error correction of higher levels of bit errors in such a hierarchical order, memory latency associated with such error correction can be avoided in the majority of data accesses, thereby improving performance of the data access. | 09-13-2012 |
20120274307 | VOLTAGE REGULATOR WITH DIFFERENT INVERTING GAIN STAGES - A voltage regulator includes a regulating transistor and a control circuit. The regulating transistor has a first current electrode for providing a regulated voltage, a second current electrode, and a control electrode. The control circuit has an output coupled to the control electrode of the regulating transistor, and an input coupled to the first current electrode of the regulating transistor. The control circuit includes a first inverting gain stage having a first load element, and a second inverting gain stage having a second load element. One of the first or second load elements is characterized as being a diode and the other of the first or second load elements is biased by a bias circuit. | 11-01-2012 |
20120306556 | DOUBLE EDGE TRIGGERED FLIP FLOP - A dual edge triggered flip flop circuit uses clock signals that are delayed from a first clock signal and from one another by respective intervals. A first set of the plurality of clock signals are used to operate a first latch circuit to allow first data to be conducted to a storage element for a period of time after a rising edge of a first clock signal. The clock signals are further used to operate a second latch circuit to allow second data to be conducted to the storage element for a period of time after a falling edge of the first clock signal. | 12-06-2012 |
20120327699 | WORD LINE FAULT DETECTION - In a memory having a word line driver and a ROM having N bit positions and a plurality of rows in which each row is coupled to a corresponding word line of the word line driver and stores a unique N bit value, a method includes activating, by the word line driver, a selected word line, and, for each bit position, determining whether a value of a true bit line of the bit position is at a same logic state as a value of a complementary bit line of the bit position when the word line driver activates the selected word line. In response to determining that a value of the true bit line is at the same logic state as the value of the complementary bit line for any of the N bit positions, providing a multiple word line fault indicator indicating that multiple word lines are activated simultaneously. | 12-27-2012 |
20130046927 | Memory Management Unit Tag Memory with CAM Evaluate Signal - A method and data processing system for accessing an entry in a memory array by placing a tag memory unit ( | 02-21-2013 |
20130046928 | Memory Management Unit Tag Memory - A method and data processing system for accessing an entry in a memory array by placing a tag memory unit ( | 02-21-2013 |
20130154707 | RECOVERABLE AND RECONFIGURABLE PIPELINE STRUCTURE FOR STATE-RETENTION POWER GATING - A system, electronic circuit, and method are disclosed. A method embodiment comprises receiving a control signal associated with a power gating operation mode of an electronic circuit, applying a reference voltage to the electronic circuit based upon the power gating operation mode, and maintaining data representing a state of a logic stage of the electronic circuit based upon the power gating operation mode. Maintaining comprises, in the described embodiment, storing data of a state of a first logic stage of the electronic circuit within a first storage element in a first power gating operation mode, and recovering data of a state of a second logic stage of the electronic circuit utilizing the data of the state of the first logic stage of the electronic circuit within the first storage element in a second power gating operation mode. | 06-20-2013 |
20130154708 | CONFIGURABLE FLIP-FLOP - A configurable flip-flop can be operated in a normal mode and a buffer mode. In the normal mode, the flip-flop latches data at the flip-flop input based on a clock signal. In the buffer mode, the flip-flop provides data at the flip-flop input to the flip-flop output, independent of the clock signal. | 06-20-2013 |
20130227368 | HIERARCHICAL ERROR CORRECTION - A data processing device can perform error detection and correction in two stages: in the first stage, error detection is performed for the load data using the in-line error detection information. If a first type of error is detected in the data segment, the error is corrected using the in-line error detection information. If a second type of error is detected error correction is performed using the residual sum. | 08-29-2013 |
20130238875 | MULTIPLE PAGE SIZE MEMORY MANAGEMENT UNIT - A memory management unit can receive an address associated with a page size that is unknown to the MMU. The MMU can concurrently determine whether a translation lookaside buffer data array stores a physical address associated with the address based on different portions of the address, where each of the different portions is associated with a different possible page size. This provides for efficient translation lookaside buffer data array access when different programs, employing different page sizes, are concurrently executed at a data processing device. | 09-12-2013 |
20130265818 | WRITE CONTENTION-FREE, NOISE-TOLERANT MULTI-PORT BITCELL - A multi-port memory cell of a multi-port memory array includes a first inverter that inverter is disabled by a first subset of write word lines and a second inverter, cross coupled with the first inverter, wherein the second inverter is disabled by a second subset of the plurality of write word lines. A first selection circuit has data inputs coupled to a first subset of a plurality of write bit lines, selection inputs coupled to the first subset of the plurality of write word lines, and an output coupled to the input of the second inverter. The second selection circuit has data inputs coupled to a second subset of the plurality of write bit lines, selection inputs coupled to the second subset of the plurality of write word lines, and an output coupled to the input of the first inverter. | 10-10-2013 |
20130268732 | SYSTEM AND METHOD FOR CACHE ACCESS - The rows of a cache are generally maintained in a low power state. In response to a memory access operation, the data processor predicts a plurality of cache rows that may be targeted by the operation, and transitions each of the plurality of cache rows to an active state to prepare them for access. The plurality of cache rows are predicted based on speculatively decoding a portion of a base address and a corresponding portion of an offset without performing a full addition of the portions. Because a full addition is not performed, the speculative decoding can be performed at sufficient speed to allow the set of rows to be transitioned to the active state before full decoding of the memory address is completed. The cache row associated with the memory address is therefore ready for access when decoding is complete, maintaining low latency for cache accesses. | 10-10-2013 |
20130283126 | ERROR DETECTION WITHIN A MEMORY - Embodiments of systems and methods for detecting errors that occur in association with an access to a memory and providing an associated error status are presented herein. According to one embodiment, an access to a memory may be received, where the access comprises a request tag. A request parity is determined based on the request tag and a stored tag and a stored parity associated with the request tag are also determined. An error correction status is determined based on the stored tag and the stored parity associated with the request tag. Additionally, a parity hotness is determined by comparing the request parity and the stored parity and a tag hotness is determined by comparing the request tag and the stored tag. An error status associated with the access is determined based on the parity hotness, the tag hotness and the error correction status. | 10-24-2013 |
20130290753 | MEMORY COLUMN DROWSY CONTROL - In accordance with at least one embodiment, column level power control granularity is provided to control a low power state of a memory using a drowsy column control bit to control the low power state at an individual column level to protect the memory from weak bit failure. In accordance with at least one embodiment, a method of using a dedicated row of bit cells in a memory array is provided wherein each bit in the row controls the low power state of a respective column in the array. A special control signal is used to access the word line, and the word line is outside of the regular word line address space. A mechanism is provided to designate the weak bit column and set the control bit corresponding to that particular column to disable the drowsy/low power state for that column. | 10-31-2013 |
20130322159 | MULTI-PORT REGISTER FILE WITH MULTIPLEXED DATA - A semiconductor memory storage device comprises an array of storage devices including a plurality of rows of the storage devices and a plurality of columns of the storage devices, a first plurality of write ports, a write select signal coupled to the write ports, a plurality of write port address lines coupled as input to each of the write ports, and a first plurality of word line select circuits coupled to receive an address signal and the write select signal for each of the write ports and to provide a single selected write word line signal to a respective one of the rows of the storage devices for one of the first plurality of write ports activated by the write select signal. | 12-05-2013 |
20130329511 | CLOCKED MEMORY WITH LATCHING PREDECODER CIRCUITRY - A memory includes a memory array having a plurality of word lines, a plurality of latching predecoders, and word line driver logic. Each latching predecoder receives a clock signal and a plurality of address signals and latches a result of a logic function of the plurality of address signals in response to a first edge of a clock cycle of the clock signal and provides a predetermined value in response to a second edge of the first clock cycle of the clock signal, wherein, in response to the second edge, every latching decoder of the plurality of latching predecoders provides a same predetermined value. The word line driver logic selectively activates a selected word line of the plurality of word lines in response to the latched results. | 12-12-2013 |
20130329512 | CLOCKED MEMORY WITH WORD LINE ACTIVATION DURING A FIRST PORTION OF THE CLOCK CYCLE - A memory includes a plurality of latching predecoders, each including a first transistor coupled between a power supply voltage and a latch and having a control electrode coupled to a clock signal; a second transistor coupled to the first transistor and having a control electrode coupled to a first address bit signal; a third transistor coupled to the second transistor and having a control electrode coupled to a second address bit signal; a fourth transistor coupled to the third transistor and having a control electrode coupled to a delayed and inverted version of the clock signal; a fifth transistor coupled between the fourth transistor and ground and having a control electrode coupled to the clock signal; and an output which provides a predecode value during a first portion of a clock cycle of the clock signal and a predetermined logic level during a second portion of the clock cycle. | 12-12-2013 |
20140003172 | MEMORY WITH WORD LINE ACCESS CONTROL | 01-02-2014 |
20140052924 | Selective Memory Scrubbing Based on Data Type - A method for minimizing soft error rates within caches by controlling a memory scrubbing rate selectively for a cache memory at an individual bank level. More specifically, the disclosure relates to maintaining a predetermined sequence and process of storing all modified information of a cache in a subset of ways of the cache, based upon for example, a state of a modified indication within status information of a cache line. A cache controller includes a memory scrubbing controller which is programmed to scrub the subset of the ways with the modified information at a smaller interval (i.e., more frequently) compared to the rest of the ways with clean information (i.e., information where the information stored within the main memory is coherent with the information stored within the cache). | 02-20-2014 |
20140052931 | Data Type Dependent Memory Scrubbing - A method for controlling a memory scrubbing rate based on content of the status bit of a tag array of a cache memory. More specifically, the tag array of a cache memory is scrubbed at smaller interval than the scrubbing rate of the storage arrays of the cache. This increased scrubbing rate is in appreciation for the importance of maintaining integrity of tag data. Based on the content of the status bit of the tag array which indicates modified, the corresponding data entry in the cache storage array is scrubbed accordingly. If the modified bit is set, then the entry in the storage array is scrubbed after processing the tag entry. If the modified bit is not set, then the storage array is scrubbed at a predetermined scrubbing interval. | 02-20-2014 |
20140062560 | RECONFIGURABLE FLIP-FLOP | 03-06-2014 |
20140195729 | Memory Having Improved Reliability for Certain Data Types - A method for minimizing soft error rates within caches by configuring a cache with certain sections to correspond to bitcell topologies that are more resistant to soft errors and then using these sections to store modified data. | 07-10-2014 |
20140195733 | Memory Using Voltage to Improve Reliability for Certain Data Types - A method for minimizing soft error rates within caches by configuring a cache with a certain way which is more resistant to soft errors and then using this way to store modified data. In certain embodiments, the memory is made more soft error resistant by increasing a voltage across bitcells of the cache. | 07-10-2014 |
20140201597 | ERROR CORRECTION WITH EXTENDED CAM - A memory system includes a memory and a content addressable memory (CAM). The memory includes a plurality of address locations, wherein each address location configured to store data and one or more error correction bits corresponding to the data. The CAM includes a plurality of entries, wherein each entry configured to store an address value of an address location of the memory and one or more extended error correction bits corresponding to the data stored at the address location of the memory. | 07-17-2014 |
20140269131 | MEMORY WITH POWER SAVINGS FOR UNNECESSARY READS - A memory device includes a plurality of sense amplifiers, an array of memory cells including a first subset of memory cells, and a plurality of word lines. Each word line is coupled to each memory cell in a respective row of the memory cells and each row of the memory cells includes one memory cell of the first subset of memory cells. Each of a plurality of control word lines is coupled to a respective one of the memory cells in the first subset of memory cells and each of the memory cells in the first subset of memory cells generates a sense amplifier control signal coupled to control operation of a respective one of the plurality of sense amplifiers. | 09-18-2014 |
20140281291 | Method and Apparatus for Memory Array Access - A method includes: receiving a first plurality of consecutive bits from a base operand, wherein a MSB of the first plurality of consecutive bits from the base operand is a LSB of a second plurality of consecutive bits from the base operand; and receiving a first plurality of consecutive bits from an offset operand, wherein a MSB of the first plurality of consecutive bits from the offset operand is a LSB of a second plurality of consecutive bits from the offset operand. The method includes summing the first plurality of consecutive bits from the base operand with the first plurality of consecutive bits from the offset operand to generate a sum value; and allowing access to one of a plurality of memory arrays and disabling access to the remainder of the plurality of memory arrays when a lesser significant bit to a MSB of the sum value equals zero. | 09-18-2014 |
20140282603 | METHOD AND APPARATUS FOR DETECTING A COLLISION BETWEEN MULTIPLE THREADS OF EXECUTION FOR ACCESSING A MEMORY ARRAY - A method includes determining, for a first thread of execution, a first speculative decoded operands signal and determining, for a second thread of execution, a second speculative decoded operands signal. The method further includes determining, for the first thread of execution, a first constant and determining, for the second thread of execution, a second constant. The method further compares the first speculative decoded operands signal to the second speculative decoded operands signal and uses the first and second constant to detect a wordline collision for accessing the memory array. | 09-18-2014 |
20140306745 | FLIP-FLOP HAVING SHARED FEEDBACK AND METHOD OF OPERATION - A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, an inversion is enabled from the second node to a third node. An inversion from the third node to the fourth node is provided. After the enabling the inversion from the second node to the third node, the first node is decoupled from the second node. After the enabling the inversion from the second node to the third node, the second node is coupled to the third node. An inversion from the fourth node to the third node is enabled and the second node is decoupled from the fourth node. | 10-16-2014 |