Patent application number | Description | Published |
20080248427 | Composition for Coating over a Photoresist Pattern Comprising a Lactam - The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) | 10-09-2008 |
20090087782 | PHOTOACTIVE COMPOUNDS - The present application relates to a compound of formula A-X—B, where (i) A-X—B form an ionic compound Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula Q-R | 04-02-2009 |
20090253080 | Photoresist Image-Forming Process Using Double Patterning - A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH | 10-08-2009 |
20090253081 | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step - A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH | 10-08-2009 |
20090274974 | SPIN-ON GRADED K SILICON ANTIREFLECTIVE COATING - Graded absorption silicon based antireflective coating compositions are described. | 11-05-2009 |
20090317739 | Composition for Coating over a Photoresist Pattern - The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), | 12-24-2009 |
20100040838 | Hardmask Process for Forming a Reverse Tone Image - The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an absorbing underlayer on a substrate; b) forming a coating of a positive photoresist over the underlayer; c) forming a photoresist pattern; d) treating the first photoresist pattern with a hardening compound, thereby forming a hardened photoresist pattern; e) forming a silicon coating over the hardened photoresist pattern from a silicon coating composition; f) dry etching the silicon coating to remove the silicon coating till the silicon coating has about the same thickness as the photoresist pattern; and, g) dry etching to remove the photoresist and the underlayer, thereby forming a trench beneath the original position of the photoresist pattern. The invention further relates to a product of the above process and to a microelectronic device made from using the above process. | 02-18-2010 |
20100092895 | SILICON-BASED ANTIREFLECTIVE COATING COMPOSITIONS - A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided. | 04-15-2010 |
20100203299 | Hardmask Process for Forming a Reverse Tone Image Using Polysilazane - The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present. | 08-12-2010 |
20110086312 | Positive-Working Photoimageable Bottom Antireflective Coating - The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is | 04-14-2011 |
20120219919 | Composition for Coating over a Photoresist Pattern Comprising a Lactam - The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure ( | 08-30-2012 |