Patent application number | Description | Published |
20080237464 | Transmission electron microscope micro-grid and method for making the same - A transmission electron microscope (TEM) micro-grid includes a metallic grid and a carbon nanotube film structure covered thereon. A method for making a TEM micro-grid includes the steps of: (a) providing an array of carbon nanotubes, quite suitably, providing a super-aligned array of carbon nanotubes; (b) drawing a carbon nanotube film from the array of carbon nanotubes; (c) covering the carbon nanotube film on a metallic grid, and treating the carbon nanotube film and the metallic grid with an organic solvent. | 10-02-2008 |
20090160028 | METHOD FOR FORMING GAPS IN MICROMECHANICAL DEVICE AND MICROMECHANICAL DEVICE - An exemplary method for forming gaps in a micromechanical device includes providing a substrate. A first material layer is deposited over the substrate. A sacrificial layer is deposited over the first material layer. A second material layer is deposited over the sacrificial layer such that at least a portion of the sacrificial layer is exposed. The exposed portion of the sacrificial layer is etched by dry etching. The remaining portion of the sacrificial layer is etched by wet etching to form gaps between the first material layer and the second material layer. One or more bulges are formed at one side of the second material layer facing the first material layer, and are a portion of the sacrificial layer remaining after the wet etching. | 06-25-2009 |
20090197038 | CARBON NANOTUBE FILM STRUCTURE AND METHOD FOR MAKING THE SAME - A carbon nanotube film structure includes at least one carbon nanotube film or at least two stacked carbon nanotube films. Each carbon nanotube film includes a plurality of ultralong carbon nanotubes parallel to the surface of the carbon nanotube film and parallel to each other. A length of the ultralong carbon nanotube is equal to or greater than 1 centimeter. The invention is also related to a method for making the above-described carbon nanotube film structure. | 08-06-2009 |
20090250107 | PHOTOVOLTAIC DEVICE - A photovoltaic device includes a substrate, a first electrode and a carbon nanotube structure. The substrate has a front surface and a rear surface. The carbon nanotube structure is disposed on the front surface of the substrate. The first electrode is disposed on the rear surface of the substrate. | 10-08-2009 |
20090250113 | SOLAR CELL - A solar cell includes a back electrode, a single crystal silicon substrate, and a carbon nanotube structure. The single crystal silicon substrate includes an upper surface and a lower surface. The back electrode is located on and electrically connected to the lower surface of the single crystal silicon substrate. The carbon nanotube structure is located on and connected to the upper surface of the single crystal silicon substrate. The carbon nanotube structure includes an upper surface and a lower surface. | 10-08-2009 |
20090250114 | PHOTOVOLTAIC DEVICE - A photovoltaic device includes a silicon substrate, a doped silicon layer, a first electrode and a second electrode. The silicon substrate has a plurality of cavities defined therein. The doped silicon layer is formed in contact the silicon substrate. The first electrode including a plurality of carbon nanotube cables is adjacent to the silicon substrate. The second electrode is attached to the silicon substrate. | 10-08-2009 |
20090253247 | Method for manufacturing iron silicide nano-wires - A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of iron powder into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600-1200° C. | 10-08-2009 |
20090253248 | Method of manufacturing silicon nano-structure - A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C. | 10-08-2009 |
20090255459 | Method for making zinc oxide nano-structrure - A method for making zinc oxide nano-structure, the method includes the following steps. Firstly, providing a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, providing a growing substrate and forming a metal layer thereon. Thirdly, depositing a catalyst layer on the metal layer. Fourthly, placing the growing substrate into the reacting room together with a quantity of zinc source material. Fifthly, introducing a oxygen-containing gas into the reacting room. Lastly, heating the reacting room to a temperature range of 500˜1100° C. | 10-15-2009 |
20090257947 | Method of manufacturing zinc aluminate nano-material - A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C. | 10-15-2009 |
20090258163 | Method for manufacturing nickel silicide nano-wires - A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate. | 10-15-2009 |
20090260679 | PHOTOVOLTAIC DEVICE - A photovoltaic device includes a substrate, a doped layer, a first electrode and a second electrode. The substrate has a plurality of cavities defined therein. The doped layer is in contact the substrate. The first electrode including a carbon nanotube composite material is adjacent to the substrate. The second electrode is attached to the substrate. | 10-22-2009 |
20090260688 | PHOTOVOLTAIC DEVICE - A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate. | 10-22-2009 |
20090283744 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The at least one of the source electrode, drain electrode, and the gate electrode includes a metallic carbon nanotube layer. The metallic carbon nanotube layer includes a plurality of metallic carbon nanotubes. | 11-19-2009 |
20090283752 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, a channel and a gate electrode. The drain electrode is spaced from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The channel includes a plurality of carbon nanotube wires, one end of each carbon nanotube wire is connected to the source electrode, and opposite end of each the carbon nanotube wire is connected to the drain electrode. | 11-19-2009 |
20090283753 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The semiconductor layer comprises a plurality of carbon nanotubes. A semiconductor layer comprising a plurality of carbon nanotubes electrically connected to the source electrode and the drain electrode, the plurality of carbon nanotubes having almost the same length are substantially parallel to each other and are joined side by side via van der Waals attractive force therebetween. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. | 11-19-2009 |
20090283754 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes at least two stacked carbon nanotube films. Each carbon nanotube film includes an amount of carbon nanotubes. At least a part of the carbon nanotubes of each carbon nanotube film are aligned along a direction from the source electrode to the drain electrode. | 11-19-2009 |
20090283770 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes a carbon nanotube layer, and the carbon nanotube layer comprises a plurality of semiconducting carbon nanotubes. | 11-19-2009 |
20090283771 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer comprises at least two stacked carbon nanotube films, and each carbon nanotube film comprises a plurality of carbon nanotubes primarily oriented along a same direction, and the carbon nanotubes in at least two adjacent carbon nanotube films are aligned along different directions. | 11-19-2009 |
20090286362 | Method for making thin film transistor - A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer. | 11-19-2009 |
20090291534 | Method for making thin film transistor - A method for making a thin film transistor, the method comprising the steps of: providing an insulating substrate; forming a carbon nanotube layer on the insulating substrate, the carbon nanotube layer includes a plurality of carbon nanotubes; applying a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of carbon nanotubes; covering the carbon nanotube layer with an insulating layer; and placing a gate electrode on the insulating layer, the gate electrode being opposite to and electrically insulated from the carbon nanotube layer by the insulating layer. | 11-26-2009 |
20090297732 | Method for making carbon nanotube films - A method for making a carbon nanotube film, the method comprising the following steps of: (a) supplying a substrate; (b) forming at least one strip-shaped catalyst film on the substrate, a width of the strip-shaped catalyst films ranging from approximately 1 micrometer to 20 micrometers; (c) growing at least one strip-shaped carbon nanotube array on the substrate using a chemical vapor deposition method; and (d) causing the at least one strip-shaped carbon nanotube array to fold along a direction parallel to a surface of the substrate, thus forming at least one carbon nanotube film. | 12-03-2009 |
20090298239 | Method for making thin film transistor - A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer. | 12-03-2009 |
20090302324 | Thin film transistor panel - A thin film transistor panel includes an insulating substrate. The insulating substrate includes a number of parallel source lines, a number of parallel gate lines crossed with the source lines, and a number of girds defined by the source lines and the gate lines. Each of the girds includes a pixel electrode and a thin film transistor. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The source electrode is connected with one of the source lines defining the grid. The drain electrode is spaced from the source electrode and connected with the pixel electrode. The semiconducting layer is connected with the source electrode and the drain electrode. The semiconducting layer includes a semiconducting carbon nanotube layer. The gate electrode is connected with one of the gate lines defining the grid. | 12-10-2009 |
20090317926 | METHOD FOR MAKING TRANSMISSION ELECTRON MICROSCOPE GRID - A method for making transmission electron microscope gird is provided. An array of carbon nanotubes is provided and drawing a carbon nanotube film from the array of carbon nanotubes. A substrate has a plurality of spaced metal girds attached on the substrate. The metal girds are covered with the carbon nanotube film and treating the carbon nanotube film and the metal girds with organic solvent. A transmission electron microscope (TEM) grid is obtained by removing remaining CNT film. | 12-24-2009 |
20090321718 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer includes a carbon nanotube structure comprised of carbon nanotubes. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The carbon nanotube structure is connected to both the source electrode and the drain electrode, and an angle exist between each carbon nanotube of the carbon nanotube structure and a surface of the semiconductor layer, and the angle ranges from about 0 degrees to about 15 degrees. | 12-31-2009 |
20100001975 | Portable computer - A portable computer includes a display panel having a display surface and a touch panel. The touch panel is disposed on the display surface and comprises at least one transparent conductive layer. The transparent conductive layer includes a carbon nanotubes layer having a carbon nanotube film. | 01-07-2010 |
20100048254 | Mobile phone - A mobile phone includes a body defining a display panel, and a touch panel. The body further includes a communicating system received therein. The touch panel is disposed on a surface of the display panel. The touch panel includes at least a carbon nanotube layer. The carbon nanotube layer includes a carbon nanotube film. | 02-25-2010 |
20100073322 | Desktop computer - A desktop computer includes a body, a display and a touch panel. The display is connected to the body by a data wire. The display includes a display screen. The touch panel includes at least one transparent conductive layer including a carbon nanotube structure. | 03-25-2010 |
20100085729 | Illuminating device - An illuminating device includes a holding element, a light source, and an acoustic member. The acoustic member includes a carbon nanotube structure. | 04-08-2010 |
20100086150 | Flexible thermoacoustic device - A flexible thermoacoustic device includes a soft supporter and a sound wave generator. The sound wave generator is located on a surface of the softer supporter. The sound wave generator includes a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes combined by van der Waals attractive force. | 04-08-2010 |
20100123267 | Method for stretching carbon nanotube film - A method for stretching a carbon nanotube film includes providing one or more carbon nanotube films and one or more elastic supporters, attaching at least one portion of the one or more carbon nanotube films to the one or more elastic supporters, and stretching the elastic supporters. | 05-20-2010 |
20100124622 | Method for making nanowire structure - The disclosure related to a method for making a nanowire structure. The method includes fabricating a free-standing carbon nanotube structure, introducing reacting materials into the carbon nanotube structure, and activating the reacting materials to grow a nanowire structure. | 05-20-2010 |
20100124645 | Carbon nanotube film - A carbon nanotube film includes a plurality of carbon nanotube strings and one or more carbon nanotubes. The plurality of carbon nanotube strings are separately arranged and located side by side. Distances between adjacent carbon nanotube strings are changed when a force is applied. One or more carbon nanotubes are located between adjacent carbon nanotube strings. | 05-20-2010 |
20100124646 | Carbon nanotube film - A carbon nanotube film includes a plurality of first carbon nanotubes and a plurality of second carbon nanotubes. The first carbon nanotubes are orientated primarily along a same direction. The second carbon nanotubes have different orientations from that of the plurality of first carbon nanotubes. Each of at least one portion of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes. | 05-20-2010 |
20100133569 | Light emitting diode - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and at least one transparent conductive layer. The transparent conductive layer comprises of a carbon nanotube structure. | 06-03-2010 |
20100166231 | Thermoacoustic device - A thermoacoustic device includes a substrate, at least one first electrode, at least one second electrode and a sound wave generator. The at least one first electrode and the at least one second electrode are disposed on the substrate. The sound wave generator is contacting with the at least one first electrode and the at least one second electrode. The sound wave generator is suspended on the substrate via the first electrode and the second electrode. The sound wave generator includes a carbon nanotube structure. | 07-01-2010 |
20100221852 | Method for fabricating light emitting diode - A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on the substrate. A carbon nanotube structure is provided and the carbon nanotube structure is lie on the second semiconductor layer. A first electrode is formed on the carbon nanotube structure. A portion of the first semiconductor layer is exposed and a second electrode is formed on the exposed portion of the first semiconductor layer to obtain the light emitting diode. | 09-02-2010 |
20100239849 | Composite material - The disclosure related to a composite material. The composite material includes a free-standing carbon nanotube structure having a plurality of carbon nanotubes and a number of nanoparticles. The nanoparticles are spaced from each other and coated on a surface of each of the carbon nanotubes of the carbon nanotube structure. | 09-23-2010 |
20100239850 | Method for making composite material - A method for fabricating a composite material includes providing a free-standing carbon nanotube structure having a plurality of carbon nanotubes, introducing at least two reacting materials into the carbon nanotube structure to form a reacting layer, activating the reacting materials to grow a plurality of nanoparticles, wherein the nanoparticles are spaced from each other and coated on a surface of each of the carbon nanotubes of the carbon nanotube structure. | 09-23-2010 |
20100285300 | Nano-materials - A nano-material includes a free-standing carbon nanotube structure and a number of nano-particles. The carbon nanotube structure includes a number of carbon nanotubes. The nano-particles are successively and closely linked to each other and coated on a surface of each of the carbon nanotubes of the carbon nanotube structure. | 11-11-2010 |
20100308008 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint resist includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), and a diluent solvent. A method of a nanoimprint lithography is also provided. | 12-09-2010 |
20100308009 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint resist that includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator. A method of a nanoimprint lithography is also provided. | 12-09-2010 |
20100308512 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint mold includes a flexible body and a molding layer formed on the flexible body. The molding layer includes a plurality of protrusions and recesses. The molding layer is a polymer material polymerized via a cross linking polymerization of a nanoimprint resist which includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator. A method for making the nanoimprint mold is also provided. | 12-09-2010 |
20100317409 | Carbon nanotube based flexible mobile phone - A carbon nanotube based flexible mobile phone includes a flexible body including a flexible display panel a flexible touch panel, and a communicating system received therein. The flexible touch panel is disposed on a surface of the flexible display panel. The flexible touch panel includes at least one carbon nanotube layer including a carbon nanotube film. | 12-16-2010 |
20100319833 | METHOD FOR MAKING TRANSMISSION ELECTRON MICROSCOPE MICRO-GRID - A method for making a transmission electron microscope (TEM) micro-grid includes the following steps. A carbon nanotube film and a metallic grid are provided. The carbon nantoube film is laid on the metallic gird. The carbon nanotube film with the metallic gird is treated with an organic solvent. Wherein, the carbon nanotube film includes a plurality of carbon nanotube bundles substantially arranged at the same direction. | 12-23-2010 |
20110003442 | METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE - A method for making a flexible semiconductor device includes the following steps. A rigid substrate is provided. A flexible substrate is provided, and placed on the rigid substrate. A semiconductor device is directly formed on the flexible substrate using a semiconductor process. After the rigid substrate is removed, the flexible semiconductor device is formed. | 01-06-2011 |
20110109006 | METHOD FOR MAKING CARBON NANOTUBE FILM - A method for making a carbon nanotube film is provided. First, a carbon nanotube array is formed on a grown substrate. The carbon nanotube array is pressed with a first substrate using a first pressing force to form a carbon nanotube film precursor. Then the first substrate and the grown substrate are separated, and the carbon nanotube film precursor is transferred onto the first substrate. After that, the carbon nanotube film precursor is pressed using a second substrate with a second pressing force. Lastly, the first substrate and the second substrate is separated, with part of the carbon nanotube precursor transferred to the second substrate to form the carbon nanotube film. | 05-12-2011 |
20110171419 | Electronic element having carbon nanotubes - An electronic element includes a substrate, and a transparent conductive layer. The substrate includes a surface. The transparent conductive layer is formed on a surface of the substrate. The transparent conductive layer includes at least one carbon nanotube layer. Carbon nanotubes in the carbon nanotube layer are adhered together by the van der Waals attractive force therebetween. | 07-14-2011 |
20110195201 | METHOD FOR MAKING A NANO-OPTICAL ANTENNA ARRAY - A method for making a nano-optical antenna array includes following steps. First, an insulative substrate is provided. Second, the insulative substrate is hydrophilicly treated. Third, a monolayer nanosphere array is formed on the insulative substrate. Fourth, a film is deposited on the monolayer nanosphere array. Fifth, the monolayer nanosphere array is removed. | 08-11-2011 |
20110293884 | THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. The three-dimensional nano-structures are located on a surface of the substrate. Each of the plurality of three-dimensional nano-structures is a stepped bulge. The stepped bulge includes a first cylinder located on the substrate and a second cylinder located on the first cylinder. | 12-01-2011 |
20110294295 | METHOD FOR MAKING THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A method for making a three-dimensional nano-structure array includes following steps. First, a substrate is provided. Next, a mask is formed on the substrate. The mask is a monolayer nanosphere array or a film defining a number of holes arranged in an array. The mask is then tailored and simultaneously the substrate is etched by the mask. Lastly, the mask is removed. | 12-01-2011 |
20110297966 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The second semiconductor layer has a plurality of three-dimensional nano-structures. Each of the plurality of three-dimensional nano-structures has a stepped structure. | 12-08-2011 |
20110303640 | NANOIMPRINT METHOD - A nanoimprint method is provided. A substrate and a master stamp are first provided. The substrate has a first resist layer, a transition layer, and a second resist layer orderly formed thereon. The master stamp has a nanopattern defined therein. The second resist layer is a layer of hydrogen silsesquioxane. The nanopattern of the master stamp is then pressed into the second resist layer to form a nanopattern in the second resist layer at normal temperature which is in a range from about 20 centidegrees to about 50 centidegrees. Finally, the nanopattern of the second resist layer is transferred to the substrate. | 12-15-2011 |
20110305625 | METHOD FOR MAKING SEMICONDUCTING CARBON NANOTUBES - A method for making semiconducting carbon nanotubes is provided. A catalyst precursor is disposed on a substrate. The catalyst precursor includes blood. Organic substances contained in the blood are removed and iron ions contained in the blood are oxidized to yield discrete ferric oxide nano-particles on the substrate. The ferric oxide nano-particles are reduced to yield isolated iron nano-particles on the substrate. Carbon nanotubes then grow on the iron nano-particles. | 12-15-2011 |
20120045172 | GRATING COUPLER AND PACKAGE STRUCTURE INCORPORATING THE SAME - A method for removing phosphorus and nitrogen from an activated sludge wastewater treatment system is provided consisting of one or more anaerobic zones followed by two or more activated sludge reactors operating in parallel each having independent aeration/mixing means, whereby the utilization of the influent organic carbon under anoxic conditions, and thereby, the selection of denitrifying phosphate accumulating organisms (DNPAOs) over non-denitrifying phosphate accumulating organisms (PAOs), is maximized in order to further maximize the removal of phosphorus and nitrogen in the wastewater treatment system. | 02-23-2012 |
20120075582 | EYEGLASSES AND LENS FOR SAME - A lens for eyeglasses includes a substrate and at least one carbon nanotube (CNT) film including a number of CNTs. The substrate includes a surface, or defines at least one cavity. The at least one CNT film is disposed on the surface of the substrate, or embedded in the at least one cavity of the substrate such that a part of light is absorbed by the CNTs of the CNT film. | 03-29-2012 |
20120107178 | BIOSENSOR, BIOSENSOR PACKAGE STRUCTURE HAVING SAME, AND METHOD FOR FABRICATING SAME - A biosensor includes a plurality of electrodes and a receptor. The plurality of electrodes comprises a plurality of carbon nanotubes. The receptor are located between the plurality of electrodes and electrically connected to the plurality of carbon nanotubes of the plurality of electrodes. In addition, the receptor reacts to a measured object to lead current variation which is transmitted by the plurality of electrodes. | 05-03-2012 |
20120125915 | MICRO HEATER - A micro heater includes a first electrode, a second electrode, a first carbon nanotube, and a second carbon nanotube. The first carbon nanotube extends from the first electrode. The second carbon nanotube branches from the second electrode. The first carbon nanotube and the second carbon nanotube intersect with each other to define a node therebetween. | 05-24-2012 |
20120152353 | SOLAR CELL AND METHOD FOR MAKING THE SAME - A solar cell is provided. The solar cell includes a silicon substrate, a back electrode, a doped silicon layer, and an upper electrode. The silicon substrate includes a lower surface, an upper surface opposite to the lower surface, and a plurality of three-dimensional nano-structures located on the upper surface. Each three-dimensional nano-structure has a stepped structure. The back electrode is located on and electrically connected to the lower surface of the silicon substrate. The doped silicon layer is attached to the three-dimensional nano-structures and the upper surface of the silicon substrate between the three-dimensional nano-structures. The upper electrode is located on at least part of the doped silicon layer. A method for making the solar cell is also provided. | 06-21-2012 |
20120164372 | CARBON NANOTUBE FILM STRUCTURE - A carbon nanotube film structure includes at least one carbon nanotube film or at least two stacked carbon nanotube films. Each carbon nanotube film includes a plurality of carbon nanotubes parallel to the surface of the carbon nanotube film and parallel to each other. A length of the carbon nanotube is equal to or greater than 1 centimeter. | 06-28-2012 |
20120167938 | SOLAR CELL, SOLAR CELL SYSTEM, AND METHOD FOR MAKING THE SAME - A solar cell includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer. The first electrode layer, the P-type silicon layer, the N-type silicon layer, and the second electrode layer are arranged in series side by side along a straight line and in contact with each other, thereby cooperatively forming a planar structure. The planar structure has a photoreceptive surface substantially parallel to the straight line and directly receives an incident light. A P-N junction is formed near an interface between the P-type silicon layer and the N-type silicon layer. | 07-05-2012 |
20120168402 | METHOD FOR FORMING RECESS DEFECT ON CARBON NANOTUBE - A method for forming a recess defect on a carbon nanotube is introduced. The method includes the following steps. A substrate with a surface is provided. A first carbon nanotube is deposed on the surface of the substrate. A second carbon nanotube is crossed with the first carbon nanotube. The second carbon nanotube crosses the first carbon nanotube and is in contact with the first carbon nanotube. A mask is deposited on substrate, the first carbon nanotube, and the second carbon nanotube. The substrate is etched to remove the second carbon nanotube and form a recess defect on the first carbon nanotube at a crossing position. | 07-05-2012 |
20120170032 | CARRIER FOR SINGLE MOLECULE DETECTION - A carrier for single molecule detection includes a substrate and a metal layer. The substrate has a surface and includes a number of three-dimensional nano-structures at the surface. The metal layer is located on the surface of the substrate and covers the three-dimensional nano-structures. The enhancement factor of SERS of the carrier is relatively high. | 07-05-2012 |
20120170033 | METHOD FOR DETECTING SINGLE MOLECULE - A method for detecting single molecule includes providing a carrier. The carrier includes a substrate and a metal layer. The substrate has a surface and defines a number of blind holes caved in the substrate from the surface thereof. The metal layer covers the surface of the substrate and inner surfaces of the number of blind holes. Single molecule samples are disposed on the metal layer. The single molecule samples are detected by a Raman Spectroscopy system. | 07-05-2012 |
20120200017 | ELASTIC DEVICE USING CARBON NANOTUBE FILM - An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter. | 08-09-2012 |
20120202050 | ELASTIC DEVICE USING CARBON NANOTUBE FILM - An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter. The carbon nanotube film includes a plurality of first carbon nanotubes orientated primarily along a first direction and a plurality of second carbon nanotubes having orientations different from the first direction. At least one portion of each of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes. The carbon nanotube film is capable of elastic deformation along a second direction that is substantially perpendicular to the first direction. | 08-09-2012 |
20120232182 | NANOIMPRINT RESIST - A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol. | 09-13-2012 |
20120244245 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint mold includes a flexible body and a molding layer formed on the flexible body. The molding layer includes a plurality of protrusions and recesses. The molding layer is a polymer material polymerized via a cross linking polymerization of a nanoimprint resist which includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator. | 09-27-2012 |
20120315761 | METHOD FOR MANUFACTURING NICKEL SILICIDE NANO-WIRES - A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate. | 12-13-2012 |
20120324724 | METHOD FOR MAKING PHASE CHANGE MEMORY - A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate. | 12-27-2012 |
20120326109 | PHASE CHANGE MEMORY CELL AND PHASE CHAGE MEMORY - A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit comprises a third electrode, a phase change layer and a fourth electrode electrically connected in series, at least part of the phase change layer is overlapped with the carbon nanotube layer. The second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell. | 12-27-2012 |
20130062001 | METHOD FOR LAYING CARBON NANOTUBE FILM - A method for laying carbon nanotube film includes following steps. A carbon nanotube film is provided. The carbon nanotube film includes a number of carbon nanotube strings substantially parallel to each other and extending along a first direction. The carbon nanotube film is stretched along a second direction substantially perpendicular with the first direction to form a deformation along the second direction. The carbon nanotube film is placed on a surface of a substrate. The deformation along the second direction is kept. | 03-14-2013 |
20130087526 | METHOD FOR MAKING THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed. | 04-11-2013 |
20130087528 | NANOIMPRINT RESIST, NANOIMPRINT MOLD AND NANOIMPRINT LITHOGRAPHY - A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate. | 04-11-2013 |
20130087818 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 04-11-2013 |
20130087819 | LIGHT EMITTING DIODE - A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light emitting surface. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light emitting surface. The number of the three-dimensional nano-structure are aligned side by side, and a cross-section of thee three-dimensional nano-structure is M-shaped. | 04-11-2013 |
20130087820 | LIGHT EMITTING DIODE - A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped. | 04-11-2013 |
20130089709 | THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. Each three-dimensional nano-structure has a first peak and a second peak aligned side by side. A first groove is defined between the first peak and the second peak. A second groove is defined between the two adjacent three-dimensional nano-structures. A depth of the first groove is lower than that of the second groove. | 04-11-2013 |
20130089938 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, wherein the light emitting diode chip comprises a first semiconductor layer, an active layer and a second semiconductor layers stacked together in that order. A patterned mask layer is located on a surface of the first semiconductor layer, wherein the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed portion of the first semiconductor layer is etched to form a protruding pair. A number of M-shaped three-dimensional nano-structures are formed by removing the mask layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 04-11-2013 |
20130089939 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, the light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layers stacked on a surface of a substrate in that order. A patterned mask layer is located on the second semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side. The second semiconductor layer is etched to form a number of three-dimensional nano-structures preform. The mask layer is removed to form a number of M-shaped three-dimensional nano-structures. The second semiconductor layer and the active layer are etched to expose a portion of the first semiconductor layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 04-11-2013 |
20130104967 | SOLAR CELL | 05-02-2013 |
20130105439 | MANUFACTURING METHOD OF GRATING | 05-02-2013 |
20130107367 | GRATING | 05-02-2013 |
20130109127 | METHOD FOR MAKING SOLAR CELL | 05-02-2013 |
20130133715 | SOLAR CELL, AND SOLAR CELL SYSTEM - A solar cell includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, a second electrode layer, and a reflector. The first electrode layer, the P-type silicon layer, the N-type silicon layer, and the second electrode layer are arranged in series side by side along a first direction and in contact with each other, thereby cooperatively forming a integrated structure. A P-N junction is formed near an interface between the P-type silicon layer and the N-type silicon layer. The integrated structure has a first surface substantially parallel to the first direction and a second surface opposite to the first surface. The first surface is used as a photoreceptive surface to directly receive incident light. The reflector is located on the second surface of the integrated structure. | 05-30-2013 |
20130140519 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 06-06-2013 |
20130140520 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140593 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140594 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140595 | LIGHT EMITTING DIODE - A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140596 | LIGHT EMITTING DIODE - A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130143340 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer. | 06-06-2013 |
20130143341 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer. | 06-06-2013 |
20130143342 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 06-06-2013 |
20130146119 | SOLAR CELL SYSTEM - A solar cell system includes two solar cells. The two solar cells are located in contact with each other and connected in parallel. Each of the two solar cells includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer. The first electrode layer, the P-type silicon layer, the N-type silicon layer, and the second electrode layer are arranged in series side by side along a first direction and in contact with each other, thereby cooperatively forming a integrated structure. A P-N junction is formed near an interface between the P-type silicon layer and the N-type silicon layer. The integrated structure has a first surface substantially parallel to the first direction and a second surface opposite to the first surface. The first surface is used as a photoreceptive surface to directly receive incident light. | 06-13-2013 |
20130152992 | SOLAR CELL SYSTEM - A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode and a second collecting electrode. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along a straight line. The P-N junction cells are arranged in series along the straight line. The number of the inner electrodes is M−1. At least one inner electrode includes a carbon nanotube array. A first collecting electrode located on an outside surface of the first P-N junction cell. A second collecting electrode located on an outside surface of the Mth P-N junction cell. A photoreceptive surface is parallel to the straight line. | 06-20-2013 |
20130153011 | SOLAR CELL SYSTEM - A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode, a second collecting electrode and a reflector. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along the straight line. The P-N junction cells are arranged in series along a straight line. The number of the inner electrodes is M−1. At least one inner electrode includes a carbon nanotube array. A photoreceptive surface is parallel to the straight line. A reflector is located on an emitting surface opposite to the photoreceptive surface. | 06-20-2013 |
20130157402 | SOLAR CELL SYSTEM MANUFACTURING METHOD - A method for manufacturing a solar cell system includes the following steps. First, a number of P-N junction cell preforms are provided. The number of the P-N junction cell preforms is M. The M P-N junction cell preforms is named from a first P-N junction cell preform to a Mth P-N junction cell preform. Second, the M P-N junction cell preforms are arranged along a straight line. Third, an inner electrode preform is formed between each two adjacent P-N junction cell preforms, wherein at least one inner electrode is a carbon nanotube array. Axial directions of the carbon nanotubes in the carbon nanotube array are parallel to the straight line. | 06-20-2013 |
20130160818 | SOLAR CELL SYSTEM - A solar cell system includes a substrate, a number of solar cells and a number of reflectors. The substrate defines a number of grooves spaced from each other. Each solar cell is located in each groove. Each solar cell includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in series side by side along a first direction and in contact with each other, thereby cooperatively forming an integrated structure. A P-N junction is formed between the P-type silicon layer and the N-type silicon layer. The integrated structure has a photoreceptive surface to expose the P-N junction and receive an incident light directly. Each reflector is located between each solar cell and each groove. | 06-27-2013 |
20130160819 | SOLAR CELL SYSTEM SUBSTRATE - A solar cell system substrate includes a plurality of grooves on a surface of a body and a plurality of conductive wires on the body and between the plurality of grooves. Each of the plurality of grooves is spaced from each other and configured to accommodate at least one solar cell. Each of the plurality of conductive wires is configured to electrically connecting each of the at least one solar cell. | 06-27-2013 |
20130160822 | SOLAR CELL SYSTEM - A solar cell system includes a substrate and a number of solar cells. The substrate defines a number of grooves spaced from each other. Each solar cell is located in each groove. Each solar cell includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in series side by side along a first direction and in contact with each other, thereby cooperatively forming an integrated structure. A P-N junction is formed near an interface between the P-type silicon layer and the N-type silicon layer. The integrated structure has a photoreceptive surface to expose the P-N junction and receive an incident light directly. | 06-27-2013 |
20130167899 | SOLAR CELL AND SOLAR CELL SYSTEM - A solar cell includes an integrated structure. The integrated structure includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in the above sequence. At least one curved surface is defined on the integrated structure. The integrated structure includes a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; and a photoreceptive surface exposing the P-N junction. The photoreceptive surface is one the at least one curved surface of the integrated structure and is configured to receive incident light beams. | 07-04-2013 |
20130167902 | SOLAR CELL AND SOLAR CELL SYSTEM - A solar cell includes an integrated structure and a reflector. The integrated structure includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in the above sequence; a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; a photoreceptive surface exposing the P-N junction. The photoreceptive surface is on a curved surface of the integrated structure and is configured to receive incident light beams. The reflector is on another side of the integrated structure, opposite to the photoreceptive surface. | 07-04-2013 |
20130171758 | METHOD FOR MAKING SOLAR CELL AND SOLAR CELL SYSTEM - A solar cell making method includes steps of making a round P-N junction preform by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer, wherein the round P-N junction preform defines a first surface and a second surface; forming a first electrode preform on the first surface and forming a second electrode preform on the second surface, thereby forming a round solar cell perform; and forming a photoreceptive surface with the P-N junction exposed on the photoreceptive surface by cutting the round solar cell preform into a plurality of arc shaped solar cells, the photoreceptive surface being on a curved surface of the arc shaped solar cell and being configured to receive incident light beams. | 07-04-2013 |
20130171761 | SOLAR CELL SYSTEM MANUFACTURING METHOD - A solar cell system making method includes steps of making a round P-N junction by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; cutting the round P-N junction into a plurality of arc shaped solar cell preforms; forming an arc shaped surface by stacking the plurality of arc shaped solar cell preforms along a first direction and forming an electrode layer between each adjacent two of the plurality of arc shaped solar cell preforms; and forming a first collection electrode and a second collection electrode to form an arc shaped solar cell system having a photoreceptive surface being on the arc shaped surface and being configured to receive incident light beams. | 07-04-2013 |
20130171762 | SOLAR CELL SYSTEM MANUFACTURING METHOD - A solar cell system making method includes steps of making a round P-N junction preform by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; stacking the plurality of P-N junction preforms along a first direction and forming an electrode layer between each adjacent two of the plurality of P-N junction preforms; and forming a first collection electrode on a first of the plurality of P-N junction preforms and forming a second collection electrode on a last of the plurality of P-N junction preforms to form a cylindrical solar cell system. Further, a step of cutting the cylindrical solar cell system can be performed. | 07-04-2013 |
20130255759 | SOLAR CELLS - A solar cell is provided. The solar cell includes a silicon substrate, a back electrode, a doped silicon layer, and an upper electrode. The silicon substrate includes a first surface, a second surface, and a number of three-dimensional nano-structures located on the first surface. The three-dimensional nano-structures are located on the second surface. The three-dimensional nano-structures are linear protruding structures that are spaced from each other, and a cross section of each linear protruding structure is an arc. The doped silicon layer is attached to the three-dimensional nano-structures and the second surface between the three-dimensional nano-structures. | 10-03-2013 |
20130256708 | LIGHT EMITTING DIODES - An LED is provided. The LED includes at least two light emitting units located on a same plane. Each light emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order. Each light emitting unit further includes a first electrode and a second electrode electrically connected with the first semiconductor layer and the second semiconductor layer respectively. The active layer of each light emitting unit is spaced from the active layers of other light emitting units. A distance between adjacent active layer ranges from 1 micron to 1 millimeter. | 10-03-2013 |
20130256716 | WHITE LIGHT EMITTING DIODES - A white LED includes a red light emitting unit, a green light emitting unit, a blue light emitting unit, and an optical grating located on a same plane. The red light emitting unit, the green light emitting unit and the blue light emitting unit are located around the optical grating. Each light emitting unit includes a first semiconductor layer, an active layer, a second semiconductor layer and a first reflector layer stacked in that order. The optical grating includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in that order. The first semiconductor layer of the optical grating and the first semiconductor layers of the light emitting units are a continuous integrated structure. | 10-03-2013 |
20130256724 | LIGHT EMITTING DIODES - An LED is provided. The LED includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked in that order and located on a surface of the substrate. A number of first three-dimensional nano-structures are located on a surface of the substrate away from the first semiconductor layer. The first three-dimensional nano-structures are linear protruding structures, a cross-section of each linear protruding structure is an arc. | 10-03-2013 |
20130256725 | LIGHT EMITTING DIODES - An LED comprises a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked in that order and located on a surface of the first electrode. The second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on a surface of the second semiconductor layer away from the active layer. The first three-dimensional nano-structures are linear protruding structures, a cross-section of each linear protruding structure is an arc. | 10-03-2013 |
20130256726 | LIGHT EMITTING DIODES AND OPTICAL ELEMENTS - An LED comprises a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked in that order and located on a surface of the substrate. A number of first three-dimensional nano-structures are located on a surface of the second semiconductor layer away from the active layer. The first three-dimensional nano-structures are linear protruding structures, a cross-section of each linear protruding structure is an arc. The present disclosure also relates to an optical element. | 10-03-2013 |
20130260491 | METHOD FOR MAKING LIGHT EMITTING DIODES - A method for making a LED comprises following steps. A substrate having a first surface and a second surface is provided. A patterned mask layer is applied on a first surface. A number of three-dimensional nano-structures are formed on the first surface and the patterned mask layer is removed. A first semiconductor layer, an active layer and a second semiconductor layer are formed on the second surface. A first electrode and a second electrode are formed to electrically connect with the first semiconductor layer and the second semiconductor pre-layer respectively. | 10-03-2013 |
20130260492 | METHOD FOR MAKING LIGHT EMITTING DIODES - A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the surface of the substrate. A patterned mask layer is applied on a surface of the second semiconductor pre-layer. A number of three-dimensional nano-structures is formed on the second semiconductor pre-layer and the patterned mask layer is removed. The substrate is removed and a first electrode is formed on a surface of the first semiconductor layer away from the active layer. A second electrode is formed to electrically connect with the second semiconductor pre-layer. | 10-03-2013 |
20130260493 | METHODS FOR MAKING LIGHT EMITTING DIODES AND OPTICAL ELEMENTS - A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the surface of the substrate. A first electrode and a second electrode are formed to electrically connect with the first semiconductor layer and the second semiconductor pre-layer respectively. A patterned mask layer is applied on a surface of the second semiconductor pre-layer. A number of three-dimensional nano-structures are formed on the second semiconductor pre-layer and the patterned mask layer is removed. A method for making an optical element is also provided. | 10-03-2013 |
20130260506 | METHOD FOR MAKING SOLAR CELLS - A method for making a solar cell includes the following steps. A silicon plate having a first surface and a second surface is provided. A patterned mask layer is formed on the second surface to expose a portion of the second surface. A number of three-dimensional nano-structures are formed by etching the exposed portion of the second surface and the mask layer is removed. A doped silicon layer is formed on surfaces of the three-dimensional nano-structures. An upper electrode is applied to contact with the doped silicon layer. A back electrode is placed on the first surface. | 10-03-2013 |
20130270603 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The second semiconductor layer is covered with stepped three-dimensional nano-structures in a particular shape, which act to reabsorb wide-angle incident light and re-emit the light at narrower angles of incidence, to increase the light-giving properties of the light emitting diode | 10-17-2013 |
20130298394 | METHOD FOR FABRICATING BIOSENSOR - A method for fabricating a plurality of biosensors includes the steps of: providing a base with a surface; forming a carbon nanotube array including a plurality of carbon nanotubes substantially parallels to each other on the surface; forming a plurality of lead pairs on the surface, the plurality of lead pairs divides the plurality of carbon nanotubes into a plurality of first carbon nanotubes and a plurality of second carbon nanotubes; eliminating the plurality of second carbon nanotubes; cutting the plurality of first carbon nanotubes to form a plurality of third carbon nanotubes and a plurality of fourth carbon nanotubes; and fabricating a plurality of receptors to electrically connect the plurality of third carbon nanotubes to the plurality of fourth carbon nanotubes. | 11-14-2013 |
20130328076 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index n | 12-12-2013 |
20130328079 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, a active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer stacked in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. | 12-12-2013 |
20130328080 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, a first electrode, and a second electrode. The first semiconductor layer includes a first surface and a second surface opposite to the first surface. The active layer, the second semiconductor layer, the third optical symmetric layer, the metallic layer, the fourth optical symmetric layer, and the first optical symmetric layer are stacked on the second surface in sequence. The first electrode covers and contacts the first surface. The second electrode is electrically connected with the second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. | 12-12-2013 |
20130328081 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, and a second optical symmetric layer stacked with other in the listed sequence. The light emitting diode further includes a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. A refractive difference between the second optical symmetric layer and the substrate is less than or equal to 0.1. | 12-12-2013 |
20130328082 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a source layer, a metallic plasma generating layer, a first optical symmetric layer, a second optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked on a surface of the substrate in series. The first electrode is electrically connected with the first semiconductor layer. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the substrate. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the substrate. The second optical symmetric layer is disposed on a surface of the first optical symmetric layer away from the substrate. | 12-12-2013 |
20130328083 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first effective refractive index n | 12-12-2013 |
20130328084 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked on the substrate in that sequence. A first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. A first effective refractive index n | 12-12-2013 |
20130328085 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer stacked together. The active layer is on a surface of the first semiconductor layer. The second semiconductor layer is on a surface of the active layer away from the first semiconductor layer. The cermet layer is on a surface of the second semiconductor layer away from the first semiconductor layer. | 12-12-2013 |
20130328086 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130328087 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130328171 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a metallic plasma generating layer, and a first optical symmetric layer stacked in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. | 12-12-2013 |
20130330849 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. A first electrode is applied to electrically connected to the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330859 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer are then disposed on a surface of the second semiconductor layer away from the substrate in the listed sequence. The substrate and the buffer layer are removed to expose the first semiconductor layer. A first electrode is applied on an exposed surface of the first semiconductor layer and a second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330860 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in the listed sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, a first optical symmetric layer, and a second optical symmetric layer are then disposed on a surface of the second semiconductor layer away from the substrate in the listed sequence. A first electrode is applied to electrically connect with the first semiconductor layer and a second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330861 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. A first electrode is applied on an exposed surface of the first semiconductor layer. A second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330862 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. a second optical symmetric layer is then disposed on a surface of the first symmetric layer away from the substrate. A first electrode is applied to electrically connect the first semiconductor layer. A second electrode is applied to electrically connect the second semiconductor layer. | 12-12-2013 |
20130330863 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. The substrate is removed. A first electrode is configured to cover entire exposed surface of the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330864 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330865 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. | 12-12-2013 |
20140008677 | LIGHT EMITTING DIODE - A light emitting diode includes a source layer, a metallic plasma generating layer, a first optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series. The first semiconductor layer includes a first surface and a second surface opposite to the first surface. The first electrode covers and contacts the first surface. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the first semiconductor layer. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the first semiconductor layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. | 01-09-2014 |
20140051215 | METHOD FOR MAKING THIN FILM TRANSISTOR - A method for making a thin film transistor, the method comprising: applying a gate electrode on an insulating substrate; covering the gate electrode with an insulating layer; forming a carbon nanotube layer on a growing substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes; transfer printing the carbon nanotube layer from the growing substrate onto the insulating layer, wherein the insulating layer insulates the carbon nanotube layer from the gate electrode; and placing a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of the plurality of carbon nanotubes. | 02-20-2014 |
20140084243 | LIGHT EMITTING DIODE WITH THREE-DIMENSIONAL NANO-STRUCTURES - A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and a surface of the active layer, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 03-27-2014 |
20140091276 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 04-03-2014 |
20140144576 | METHOD FOR MAKING TRANSPARENT CONDUCTIVE ELEMENT - A method for making a transparent conductive element includes providing a carbon nanotube film. The carbon nanotube film includes a number of carbon nanotube wires in parallel with and spaced from each other and a number of carbon nanotubes in contact with adjacent two of the carbon nanotube wires. The carbon nanotube film is placed on a surface of a softened polymer substrate. The polymer substrate and the carbon nanotube film are stretched. The softened polymer substrate is solidified to maintain the stretched state of the carbon nanotube film. | 05-29-2014 |
20140170056 | METHOD FOR MAKING CARBON NANOTUBES - A method for making carbon nanotubes is disclosed. The method includes steps of: (a) providing a growing device, wherein the growing device comprises a reacting room having a gas inlet and a gas outlet; (b) forming a catalyst layer on a first planar surface of a growing substrate; (c) placing the growing substrate and a receiving substrate having a second planar surface in the reacting room, wherein the first planar surface and the second planar surface are parallel with each other; (d) introducing a carbonaceous gas in the reaction room to form a gas flow and growing a first plurality of carbon nanotubes from the growing substrate, wherein the first plurality of carbon nanotubes are brought above the receiving substrate by the gas flow; and (e) stopping the introducing the carbonaceous gas such that the first plurality of carbon nanotubes deposits on the receiving substrate. | 06-19-2014 |
20140175045 | METHOD FOR MAKING GRATING - A method for making grating is provided. The method includes following steps. A substrate is provided. A mask layer is located on the substrate. The mask layer is patterned, and a number of bar-shaped protruding structures are formed on a surface of the mask layer, a slot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the substrate. The protruding structures are etched so that each of two adjacent protruding structures begin to slant face to face until they are contacting each other. The exposed portion of the substrate is etched through the slot. The mask layer is removed. | 06-26-2014 |
20140177665 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a body, a metal film, and at least one microstructure. The at least one microstructure is concaved from a first reflective surface of the total reflective mirror. The at least one microstructure has a depth and a lateral size, and both the depth and the lateral size are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 06-26-2014 |
20140177666 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a microstructure. The microstructure is convex ring-shaped structure. The convex ring-shaped structure has a height and a width, and both the height and the width are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 06-26-2014 |
20140177667 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a body, a metal film, and at least one microstructure. The at least one microstructure has a height and a lateral size, and both the height and the lateral size are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 06-26-2014 |
20140184250 | METHOD FOR MEASURING ELECTRIC POTENTIAL DIFFERENCE - A method for measuring electric potential difference comprises following steps. A carbon nanotube composite layer is located on an object and electrically connected to a first region and a second region spaced from each other in the object, wherein an unknown electric potential difference U exists between the first region and the second region. Characteristic band frequency value Y* of Raman-spectra of the carbon nanotube composite layer under the unknown electric potential difference U is measured. A relationship between the characteristic band frequency value Y of Raman-spectra and the electric potential difference ΔU of the carbon nanotube composite layer is obtained. Value of unknown electric potential difference U is obtained through the relationship between the characteristic band frequency value Y of Raman-spectra and the electric potential difference ΔU. | 07-03-2014 |
20140209997 | THIN FILM TRANSISTOR - A thin film transistor based on carbon nanotubes includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconductor layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The work-functions of the source electrode and of the drain electrode are different from that of the semiconductor layer, enabling the creation of both p-type and n-type field-effect transistors. | 07-31-2014 |
20140217262 | METHOD FOR DETECTING POLARIZED LIGHT - A method for detecting polarized light is disclosed. Providing a polarized light detection system including a photoresistor, a power source and a detection apparatus. The photoresistor includes a first electrode layer and a photosensitive material layer. The detection apparatus includes a current detection device and a computer analysis system. An incident light is irradiated onto a surface of the photoresistor. Polarization information of the incident light is identified by the photoresistor. Current change in the photoresistor is detected by the current detection device. The polarization information of the incident light is analyzed by the computer analysis system. | 08-07-2014 |
20140217536 | POLARIZED LIGHT DETECTION SYSTEM - A polarized light detection system includes a detection apparatus, a power source, and a photoresistor. The detection apparatus, power source and photoresistor are electrically connected with wires to form a galvanic circle. The photoresistor includes a photosensitive material layer with a first surface and a second surface opposite to each other, a first electrode layer located on the first surface of the photosensitive material layer, and a second electrode layer located on the second surface of the photosensitive material layer. The first electrode layer includes a carbon nanotube film structure. | 08-07-2014 |
20140218161 | PHOTORESISTOR - A photoresistor includes a first electrode layer, a photosensitive material layer, and a second electrode layer. The first electrode layer, photosensitive material layer and second electrode layer are stacked with each other. The first electrode layer is located on a first surface of the photosensitive material layer. The second electrode layer is located on a second surface of the photosensitive material layer. The first surface and second surface of the photosensitive material layer are opposite to each other. The first electrode layer includes a carbon nanotube film structure. | 08-07-2014 |
20140246811 | METHOD FOR MAKING NANOWIRE STRUCTURE - The disclosure related to a method for making a nanowire structure. First, a free-standing carbon nanotube structure is suspended. Second, a metal layer is coated on a surface of the carbon nanotube structure. The metal layer is oxidized to grow metal oxide nanowires. | 09-04-2014 |
20140283893 | SOLAR CELL SYSTEM - A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode, a second collecting electrode and a reflector. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along the straight line. The P-N junction cells are arranged in series along a straight line. The number of the inner electrodes is M−1. At least one inner electrode includes a plurality of carbon nanotubes. A photoreceptive surface is parallel to the straight line. A reflector is located on an emitting surface opposite to the photoreceptive surface. | 09-25-2014 |
20140291614 | THIN FILM TRANSISTOR - A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer. | 10-02-2014 |
20140291718 | LIGHT EMITTING DIODES - A LED includes a red light emitting unit, a green light emitting unit, a blue light emitting unit, and an optical grating located on a same plane. The red light emitting unit, the green light emitting unit and the blue light emitting unit are located around the optical grating. Each light emitting unit includes a first substrate, a first semiconductor layer, an first active layer, a second semiconductor layer and a first reflector layer stacked in that order. The optical grating includes a second substrate, a first semiconductor layer, an active layer, and a second semiconductor layer stacked in that order. The second substrate and the three first substrates are a continuous integrated substrate structure. | 10-02-2014 |
20140294033 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a body, a metal film, and at least one microstructure. Each of the at least one microstructure is a step structure. The step structure includes a plurality of cylinders stacked with each other with respect to their diameters. Both the height and the diameter of the cylinders are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 10-02-2014 |
20140294034 | LASER - A laser includes a total reflective mirror, an output mirror, a discharge lamp, and an active laser medium. The total reflective mirror, the output mirror, and the discharge lamp define a resonant cavity. The active laser medium is filled in the resonant cavity. The total reflective mirror includes a microstructure. The microstructure is concave ring-shaped structure. The concave ring-shaped structure has a depth and a width, and both the depth and the width are in a range from about 0.5λ to about 2λ, while λ is a working wavelength of the laser. | 10-02-2014 |
20140306175 | THIN FILM TRANSISTOR - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a first conductive layer, a second conductive layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The first conductive layer is sandwiched between the source electrode and the semiconductor layer. The second conductive layer is sandwiched between the drain electrode and the semiconductor layer. The gate electrode is insulated from the source electrode, the drain electrode, the first conductive layer, the second conductive layer, and the semiconductor layer by the insulating layer. A first work-function of a first material of the first conductive layer and the second conductive layer is same as a second work-function of a second material of the semiconductor layer. | 10-16-2014 |
20140306185 | THIN FILM TRANSISTOR AND METHOD FOR MAKING THE SAME - A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The insulating layer has a first surface and a second surface opposite to the first surface. The gate electrode is located on the first surface of the insulating layer. The source electrode, the drain electrode, and the semiconductor layer are located on the second surface of the insulating layer. The gate electrode, the source electrode, and the drain electrode include a first carbon nanotube layer. The semiconductor layer includes a second carbon nanotube layer. A first film resistor of the first carbon nanotube layer is smaller than or equal to 10 kΩ per square. A second film resistor of the second carbon nanotube layer is greater than or equal to 100 kΩ per square. | 10-16-2014 |
20140346137 | METHOD FOR MAKING THREE-DIMENSIONAL NANO-STRUCTURE ARRAY - A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent bar-shaped protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent bar-shaped protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed. | 11-27-2014 |
20140356791 | METHOD OF MAKING NANOSTRUCTURE - A method for making nanostructure is provided. The method includes following steps. A conductive layer including a graphene film is applied on an insulating substrate. A resist layer is placed on the conductive layer. A number of openings are formed by patterning the resist layer via electron beam lithography. A part of the conductive layer is exposed to form a first exposed portion through the plurality of openings. The first exposed portion of the conductive layer is removed to expose a part of the insulting substrate to form a second exposed portion. A preform layer is introduced on the second exposed portion of the insulating substrate. Remaining resist layer and remaining conductive layer are eliminated. A number of nanostructures are formed. | 12-04-2014 |
20140367357 | MANUFACTURING METHOD OF GRATING - The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride, sulfur hexafluoride, and argon. Finally, the patterned mask layer is removed. | 12-18-2014 |
20150050786 | THIN FILM TRANSISTOR - A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer. | 02-19-2015 |
20150069326 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 03-12-2015 |
20150069446 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode electrically is connected to the second semiconductor layer. The first semiconductor layer has a number of three-dimensional nano-structures, and each of the number of three-dimensional nano-structures has a stepped structure. | 03-12-2015 |
20150085364 | HOWLLOW-STRUCTURE METAL GRATING - A hollow-structure metal grating is provided. The hollow-structure metal grating includes a substrate, a number of connecting metal layers, and a number of hollow metal protrusions spaced and located on a surface of the substrate. A space is defined between each of the number of hollow metal protrusions and the substrate. | 03-26-2015 |
20150087141 | METHOD OF MANUFACTURING METAL GRATING - A method for making a metal grating is provided. The method includes providing a substrate, applying a metal layer on a surface of the substrate, forming a number of protrusions spaced from each other on a surface of the metal layer, wherein each of the number of protrusions is made of two resist layer, one of the two resist layers being made of silicone oligomer, etching the surface of the metal layer exposed out of the number of protrusions using a physical etching gas and a reactive etching gas, and dissolving the number of protrusions on the surface of the metal layer. | 03-26-2015 |
20150087152 | METHOD OF MANUFACTURING HOWLLOW-STRUCTURE METAL GRATING - A method for making a hollow-structure metal grating is provided. The method includes the following steps. First, a substrate is provided. Second, a metal layer is located on a surface of the substrate. Third, a patterned mask layer is formed on a surface of the metal layer. The patterned mask layer is made of a chemical amplified photoresist. Fourth, the surface of the metal layer exposed out of the patterned mask layer is plasma etched. Lastly, the patterned mask layer on the surface of the metal layer is dissolved. | 03-26-2015 |
20150087153 | METHOD OF MANUFACTURING HOWLLOW-STRUCTURE METAL GRATING - A method for making a hollow-structure metal grating is provided. The method includes providing a substrate, forming a patterned mask layer on a surface of the substrate, applying a metal layer with a thickness greater than 10 nanometers on the patterned mask layer, and removing the patterned mask layer by a washing method using organic solvent. The patterned mask layer includes a plurality of first protruding structures and a plurality of first cavities arranged in intervals. | 03-26-2015 |