Patent application number | Description | Published |
20090297696 | METHODS FOR FORMING CONDUCTIVE TITANIUM OXIDE THIN FILMS - The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures. | 12-03-2009 |
20090324821 | METHODS FOR FORMING THIN FILMS COMPRISING TELLURIUM - Methods for controllably forming Sb—Te, Ge—Te, and Ge—Sb—Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI | 12-31-2009 |
20100009078 | Synthesis and Use of Precursors for ALD of Tellurium and Selenium Thin Films - Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR | 01-14-2010 |
20120329208 | SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS - Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR | 12-27-2012 |
20140174342 | METHODS FOR INCREASING GROWTH RATE OF THIN FILMS - The present invention generally related to adding Indium precursors to deposition processes for thin films. Indium precursors are added in order to increase the growth rate per cycle of the deposition process. A plurality of deposition processes are disclosed herein which comprising a plurality of deposition cycles and providing an In-precursor pulse before at least one reactant pulse in at least one deposition cycle. The In-precursor can be added for increasing the average growth rate per cycle by at least 50% and in many examples above 500% compared to the growth rate of a similar deposition process without providing an In-precursor. Examples disclosed herein include the deposition of thin films comprising pnictides or chalcogenides, made by atomic layer deposition. | 06-26-2014 |
20140273477 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
20140273528 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
20140273531 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
20150104954 | DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS - Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film. | 04-16-2015 |
20150104955 | DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS - Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film. | 04-16-2015 |
20150162183 | METHODS FOR FORMING CONDUCTIVE TITANIUM OXIDE THIN FILMS - The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures. | 06-11-2015 |
20150162185 | ATOMIC LAYER DEPOSITION OF SILICON CARBON NITRIDE BASED MATERIALS - A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles. | 06-11-2015 |
Patent application number | Description | Published |
20120270393 | METAL SILICIDE, METAL GERMANIDE, METHODS FOR MAKING THE SAME - In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. | 10-25-2012 |
20120302055 | DEPOSITION AND REDUCTION OF MIXED METAL OXIDE THIN FILMS - In one aspect, methods of forming mixed metal thin films comprising at least two different metals are provided. In some embodiments, a mixed metal oxide thin film is formed by atomic layer deposition and subsequently reduced to a mixed metal thin film. Reduction may take place, for example, in a hydrogen atmosphere. The presence of two or more metals in the mixed metal oxide allows for reduction at a lower reduction temperature than the reduction temperature of the individual oxides of the metals in the mixed metal oxide film. | 11-29-2012 |
20130012003 | METHODS FOR DEPOSITING THIN FILMS COMPRISING GALLIUM NITRIDE BY ATOMIC LAYER DEPOSITION - Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes. | 01-10-2013 |
20130109160 | METHODS FOR DEPOSITING THIN FILMS COMPRISING INDIUM NITRIDE BY ATOMIC LAYER DEPOSITION | 05-02-2013 |
20130115768 | METHODS FOR DEPOSITING NICKEL FILMS AND FOR MAKING NICKEL SILICIDE AND NICKEL GERMANIDE - In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes. | 05-09-2013 |
20150217330 | SELECTIVE DEPOSITION OF METALS, METAL OXIDES, AND DIELECTRICS - Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material. | 08-06-2015 |
20150287591 | DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS - Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C. | 10-08-2015 |
Patent application number | Description | Published |
20080225944 | Allocation of Available Bits to Represent Different Portions of Video Frames Captured in a Sequence - A technique of encoding video frames allocates an available number of bits to different portions of the video frame. A processing unit identifies a region of interest (ROI) in a video frame, and computes a first and second complexity parameter respectively representing the change in video information in the ROI portions and non-ROI portions in the video frame relative to a reference frame. Bits are allocated to the ROI portion proportional (positive correlation) to the first complexity parameter and a ratio of the area of the ROI to the area of the frame. The remaining available bits are allocated to the non-ROI. In an embodiment, the bits are encoded according to H.264 standard. | 09-18-2008 |
20080226278 | AUTO_FOCUS TECHNIQUE IN AN IMAGE CAPTURE DEVICE - Multiple sets of pixel values representing a captured image of a scene are received, with each set representing an image captured with a corresponding degree of focus. An image processor may identify a region of interest in the captured image, automatically determine the configuration parameters for a lens assembly to provide a desired degree of focus for the region of interest, and generate signals to configure a lens assembly. In an embodiment, the region of interest is a face, the desired degree of focus of the face is determined by computing a rate of variation of luminance of pixels representing the face, and the desired degree is the degree of the image having the maximum degree of focus. | 09-18-2008 |
20080226279 | Auto-exposure Technique in a Camera - An image processor, which determines appropriate exposure parameters for a shutter assembly in a camera. The image processor may computationally determine a region of interest in a scene sought to be captured, and set the parameters to ensure that the exposure parameters are set to capture an image of the scene with the region of interest having a desired brightness level. In an embodiment, pixel values of multiple frames (each frame with a corresponding set of configuration parameters of the shutter assembly) may be examined to determine the frame having pixel values with the region having the desired brightness level. The shutter assembly may be configured with the parameters corresponding to such a frame to provide an auto-exposure feature. | 09-18-2008 |
20080231718 | Compensating for Undesirable Camera Shakes During Video Capture - An image processor in an image capture device compensates for the effects of undesirable camera shakes occurring during video capture The image processor receives a pair of source frames representing images of a scene, generates a pair of subsampled frames from the source frames, and computes a coarse displacement of the captured image due to camera shakes by comparing the two subsampled frames. The image processor may then refine the determined coarse displacement by comparing the two source frames and a bound determined by an extent of subsampling, and compensate for the displacement accordingly. Display aberrations such as blank spaces caused due to shifting are also avoided by displaying only a portion of the captured image and shifting the displayed portion to compensate for camera shake. The image processor also recognizes displacements due to intentional camera movement, and does not correct for such displacements. | 09-25-2008 |
20100103281 | AUTO-FOCUS TECHNIQUE IN AN IMAGE CAPTURE DEVICE - Multiple sets of pixel values representing a captured image of a scene are received, with each set representing an image captured with a corresponding degree of focus. An image processor may identify a region of interest in the captured image, automatically determine the configuration parameters for a lens assembly to provide a desired degree of focus for the region of interest, and generate signals to configure a lens assembly. In an embodiment, the region of interest is a face, the desired degree of focus of the face is determined by computing a rate of variation of luminance of pixels representing the face, and the desired degree is the degree of the image having the maximum degree of focus. | 04-29-2010 |
20150208079 | ADAPTIVE FRAME TYPE DETECTION FOR REAL-TIME LOW-LATENCY STREAMING SERVERS - An enhanced display encoder system for a video stream source includes an enhanced video encoder that has parallel intra frame and inter frame encoding units for encoding a video frame, wherein an initial number of macroblocks is encoded to determine a scene change status of the video frame. Additionally, a video frame history unit determines an intra frame update status for the video frame from a past number of video frames, and an encoder selection unit selects the intra frame or inter frame encoding unit for further encoding of the video frame to support a wireless transmission based on the scene change status and the intra frame update status. A method of enhanced video frame encoding for video stream sourcing is also provided. | 07-23-2015 |
Patent application number | Description | Published |
20090290037 | Selection of an optimum image in burst mode in a digital camera - An aspect of the present invention selects one of the images captured in burst mode as an optimum image based on processing only the captured images, without requiring any external images. According to another aspect of the present invention, the camera settings are set to different combination of values and a frame is formed for each combination of values from the corresponding captured image. Image metrics representing inherent image qualities may be extracted from each of the frames and one of the frames is selected based on the extracted metrics. In an embodiment, each combination of the camera settings includes corresponding values for exposure duration and white balance. | 11-26-2009 |
20100128777 | Optimal Power Usage in Encoding Data Streams - An encoder provided according to an aspect of the present invention uses different encoding techniques depending on an amount of power available in the corresponding durations. Due to the ability to use such different encoding techniques, power may be optimally utilized. The optimization is further enhanced by dynamically switching between encoding techniques according to power amount availability in corresponding durations. In an embodiment, each encoding technique estimates motion vectors at corresponding level of precision (thereby consuming a corresponding level of power) and the precision level is chosen to correspond to available power budget. The circuitry not required for a desired precision level may be switched off. | 05-27-2010 |
20140140676 | REVERSE VIDEO PLAYBACK IN A DATA PROCESSING DEVICE - A method includes initiating, through an interface of a data processing device, reverse playback of a video file stored in a memory of the data processing device. The method also includes causing, through a set of instructions associated with a processor of the data processing device communicatively coupled to the memory and/or an operating system executing on the data processing device, the processor to read frames corresponding to the video file in a reverse chronological order within a desired timeframe following to initiation of the reverse playback. Further, the method includes decoding, through the processor, each frame corresponding to the reverse chronological order for rendering thereof on the data processing device. | 05-22-2014 |