Poodt
Paulus Willibrordus George Poodt, Didam NL
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20110104885 | METHOD FOR TREATING A METAL OXIDE LAYER - The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180° C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H | 05-05-2011 |
Paulus Willibrordus George Poodt, Nijmegen NL
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20130043212 | CONTINUOUS PATTERNED LAYER DEPOSITION - A method of manufacturing a substrate with a patterned layer of deposited material, the patterned layer being deposited from a processing head, the method comprising | 02-21-2013 |
20130118895 | APPARATUS AND METHOD FOR REACTIVE ION ETCHING - The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones. | 05-16-2013 |
Paulus Willibrordus George Poodt, Delft NL
Patent application number | Description | Published |
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20130323420 | APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION ON A SURFACE - Apparatus for atomic layer deposition on a surface of a substrate, the apparatus comprising: a deposition member; a substrate table for supporting the substrate; a first reactant injector for supplying a first reactant; a second reactant injector for supplying a second reactant; a gas injector being arranged for creating, by means of gas injected by the gas injector, a gas barrier and optionally being arranged for creating a gas bearing; a heater for heating the gas that is to be injected by the gas injector; and an additional heater for heating the deposition member and the substrate table, and for heating the substrate. The deposition member has a gas inlet for the gas that is to be injected by the gas injector. The heater is provided outside the deposition member. The gas transported from the gas inlet is heated by the heater before said gas enters the gas inlet. | 12-05-2013 |