Patent application number | Description | Published |
20080261847 | Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon - A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture. | 10-23-2008 |
20090118153 | METALS COMPATIBLE POST-ETCH PHOTORESIST REMOVER AND/OR SACRIFICIAL ANTIREFLECTIVE COATING ETCHANT - A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture. | 05-07-2009 |
20100112728 | METHODS FOR STRIPPING MATERIAL FOR WAFER RECLAMATION - Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure. | 05-06-2010 |
20100163788 | LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon. | 07-01-2010 |
20100261632 | NON-FLUORIDE CONTAINING COMPOSITION FOR THE REMOVAL OF RESIDUE FROM A MICROELECTRONIC DEVICE - Cleaning compositions and processes for removing residue from a microelectronic device having said residue thereon. The composition, which is substantially devoid of fluoride species, amine species, and organic solvents, achieves highly efficacious cleaning of the residue material, including post-etch residue, post-ash residue and/or post-CMP residue, from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon. | 10-14-2010 |
20110039747 | COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESIST - A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s). | 02-17-2011 |
20110275164 | COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS HAVING LOW-K DIELECTRIC MATERIALS THEREON - A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture. | 11-10-2011 |
20120015857 | LITHOGRAPHIC TOOL IN SITU CLEAN FORMULATIONS - Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus. | 01-19-2012 |
20130276284 | METHOD FOR RECYCLING OF OBSOLETE PRINTED CIRCUIT BOARDS - Processes for recycling printed wire boards using environmentally-friendly compositions, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. | 10-24-2013 |
20130295712 | METHODS OF TEXTURING SURFACES FOR CONTROLLED REFLECTION - Novel methods for the texturing of photovoltaic cells is described, wherein texturing minimizes reflectance losses and hence increases solar cell efficiency. In one aspect, a microstamp with the mirror inverse of the optimum surface structure is described. The photovoltaic cell substrate to be etched and the microstamp are immersed in a bath and pressed together to yield the optimum surface structure. In another aspect, micro and nanoscale structures are introduced to the surface of a photovoltaic cell by wet etching and depositing nanoparticles or introducing metal induced pitting to a substrate surface. In still another aspect, remote plasma source (RPS) or reactive ion etching (RIE), is used to etch nanoscale features into a silicon-containing substrate. | 11-07-2013 |
20130336857 | SUSTAINABLE PROCESS FOR RECLAIMING PRECIOUS METALS AND BASE METALS FROM E-WASTE - Processes for recycling electronic components removed from printed wire boards, whereby precious metals and base metals are extracted from the electronic components using environmentally friendly compositions. At least gold, silver and copper ions can be extracted from the electronic components and reduced to their respective metals using the processes and compositions described herein. | 12-19-2013 |
20140191019 | APPARATUS AND METHOD FOR STRIPPING SOLDER METALS DURING THE RECYCLING OF WASTE ELECTRICAL AND ELECTRONIC EQUIPMENT - Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module. | 07-10-2014 |
20150050199 | REMOVAL OF LEAD FROM SOLID MATERIALS - A leaching composition that substantially removes lead from solid materials and a method of using said composition. Preferably, the concentration of lead in the solid materials following processing is low enough that the solid materials can be reused and/or disposed of at minimal cost to the processor. Preferably, the solid materials comprise glass, such as cathode ray tube glass. | 02-19-2015 |
20150321279 | APPARATUS AND METHOD FOR STRIPPING SOLDER METALS DURING THE RECYCLING OF WASTE ELECTRICAL AND ELECTRONIC EQUIPMENT - Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module. | 11-12-2015 |
20150322540 | APPARATUS AND METHOD FOR STRIPPING SOLDER METALS DURING THE RECYCLING OF WASTE ELECTRICAL AND ELECTRONIC EQUIPMENT - Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module. | 11-12-2015 |
20150322545 | APPARATUS AND METHOD FOR STRIPPING SOLDER METALS DURING THE RECYCLING OF WASTE ELECTRICAL AND ELECTRONIC EQUIPMENT - Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module. | 11-12-2015 |
Patent application number | Description | Published |
20080299718 | DAMASCENE PROCESS HAVING RETAINED CAPPING LAYER THROUGH METALLIZATION FOR PROTECTING LOW-K DIELECTRICS - A method of forming single or dual damascene interconnect structures using either a via-first or trench first approach includes the steps of providing a substrate surface having an etch-stop layer thereon, a low-k dielectric layer on the etch-stop layer, and a dielectric capping layer on the low-k dielectric layer. In the single damascene process using trench pattern, a trench is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the via-first process, using a via pattern, the via is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the trench first process, using the via pattern the via is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the single damascene or either via-first or trench-first dual damascene embodiment, the capping layer is retained over the low-k dielectric layer on top surfaces of the trench into the metal processing, generally including CMP processing, wherein the CMP process removes at least a portion, and in one embodiment the entire, capping layer. | 12-04-2008 |
20080305625 | POISON-FREE AND LOW ULK DAMAGE INTEGRATION SCHEME FOR DAMASCENE INTERCONNECTS - A method of forming a dual-damascene structure is disclosed. A lower dielectric hardmask layer and an upper dielectric hardmask layer are deposited on an ultra low-k film. A first via is formed in the upper hardmask layer. Next, a first trench is formed using the tri-layer resist scheme. Finally, a full via and a full trench are formed simultaneously. An optional etch-stop layer can be used in the ultra low-k layer to control trench depth. | 12-11-2008 |
20090017563 | PLASMA TREATMENT AND REPAIR PROCESSES FOR REDUCING SIDEWALL DAMAGE IN LOW-K DIELECTRICS - A method of forming an interconnect structure for an integrated circuit, including the steps of providing a substrate and forming a dielectric stack on the substrate including an etch-stop layer, a low-k dielectric layer, and a hardmask layer. The method further includes the steps of patterning a photoresist masking layer on the dielectric stack to define a plurality of feature defining regions and plasma processing the substrate in a plasma-based reactor, The processing step includes etching a plurality of features into the hardmask layer and at least a portion of the low-k dielectric layer and performing a plasma treatment process in situ in the plasma-based reactor, where the plasma treatment process includes flowing at least one hydrocarbon into the reactor and generating a plasma, where a mass flow rate of the hydrocarbon is at least 0.1 sccm. The method also includes forming a metal conductor in the plurality of features. | 01-15-2009 |
20090081864 | SiC Film for Semiconductor Processing - A silicon carbide (SiC) film for use in backend processing of integrated circuit manufacturing, is generated by including hydrogen in the reaction gas mixture. This SiC containing film is suitable for integration into etch stop layers, dielectric cap layers and hard mask layers in interconnects of integrated circuits. | 03-26-2009 |
20090111224 | FUSI INTEGRATION METHOD USING SOG AS A SACRIFICIAL PLANARIZATION LAYER - A method for making a transistor | 04-30-2009 |
20100041231 | FUSI Integration Method Using SOG as a Sacrificial Planarization Layer - A method for making a transistor | 02-18-2010 |
20110034023 | SILICON CARBIDE FILM FOR INTEGRATED CIRCUIT FABRICATION - A silicon carbide (SiC) film for use in backend processing of integrated circuit manufacturing, is generated by including hydrogen in the reaction gas mixture. This SiC containing film is suitable for integration into etch stop layers, dielectric cap layers and hardmask layers in interconnects of integrated circuits. | 02-10-2011 |
20110143533 | POISON-FREE AND LOW ULK DAMAGE INTEGRATION SCHEME FOR DAMASCENE INTERCONNECTS - A method of forming a dual damascene structure is disclosed. A lower dielectric hardmask layer and an upper dielectric hardmask layer are deposited on an ultra low-k film. A first via is formed in the upper hardmask layer. Next, a first trench is formed using a tri-layer resist scheme. Finally, a full via and a full trench are formed simultaneously. An optional etch-stop layer can be used in the ultra low-k layer to control trench depth. | 06-16-2011 |
Patent application number | Description | Published |
20080306213 | Process for preparing rubber compositions and articles made therefrom - A process for preparing a rubber composition comprises:
| 12-11-2008 |
20090111923 | Halo-functional silane, process for its preparation, rubber composition containing same and articles manufactured therefrom - A halo-functional silane possesses halogen functionality and alkanedioxysilyl functionality. | 04-30-2009 |
20100036018 | ACTIVATED HALO-CONTAINING ARALKYLSILANE COMPOSITION, PROCESS OF PREPARING SAME AND RUBBER COMPOSITIONS MADE THEREFROM - The invention is directed to an activated halo-containing aralkylsilanes possessing at least one hydrolyzable group bonded to a silicon atom and at least one halo functional group bonded to a carbon atom to which both the silicon atom and an aromatic group are covalently bonded. The invention is also directed to a process for making such a silane as well as its use in rubber compositions and articles containing such rubber compositions, such as tires. | 02-11-2010 |
20110003922 | Halo-Functional Silane, Process For Its Preparation, Rubber Composition Containing Same and Articles Manufactured Therefrom - A halo-functional silane possesses halogen functionality and alkanedioxysilyl functionality. | 01-06-2011 |
20150203724 | COMPOSITIONS WITH ENHANCED FLEXIBILITY - Compositions are provided which comprises an active hydrogen-containing resin, a flexibilizer and at least one curing agent. The cured compositions possess enhanced flexibility while maintaining hardness, and are highly suitable for applications such as coatings, adhesives, sealants, gaskets, industrial rubber goods, and the like. | 07-23-2015 |
20150368386 | (METH)ACRYLOXY-CONTAINING TRISILOXANE, SILOXANE-CONTAINING POLYMERS AND BIOMEDICAL DEVICES THEREFROM - There is provided a trisiloxane having a 3-(meth)acryloxy-substituted (hydroxylcyclohexyl)ethyl group, useful in making water absorbing silicone-hydrogel films for biomedical devices, such as contact lens, and a process for producing these monomers. This invention also provides for copolymers made from the trisiloxane having a 3-(meth)acryloxy-substituted (hydroxylcyclohexyl)ethyl group described herein. | 12-24-2015 |
Patent application number | Description | Published |
20090249500 | SYSTEM FOR MONITORING BACTERIAL TUMOR TREATMENT - A method to follow the progress of tumor treatment in subjects utilizes bacteria that have been modified to express a fluorescent protein. The method can also monitor expression of genes associated with the bacteria that produce therapeutic agents during the course of treatment, optionally against a background of fluorescence generated by the tumor itself. The method permits visualization of the progress of treatment in live subjects so that treatments can be modified according to their efficacy. | 10-01-2009 |
20100003238 | Modified hyaluronidases and uses in treating hyaluronan-associated diseases and conditions - Provided are combinations, compositions and kits containing a hyaluronan degrading enzyme, such as a soluble hyaluronidase, for treatment of hyaluronan-associated conditions, diseases and disorders. In one example, the products include an additional agent or treatment. Such products can be used in methods for administering the products to treat the hyaluronan-associated diseases and conditions, for example, hyaluronan-associated cancers, for example, hyaluronan-rich tumors. The methods include administration of the hyaluronan degrading enzyme composition alone or in combination with other treatments. Also provided are methods and compositions for providing sustained treatment effects in hyaluronan-associated diseases and conditions. | 01-07-2010 |
20120171153 | Modified hyaluronidases and uses in treating hyaluronan-associated diseases and conditions - Provided are combinations, compositions and kits containing a hyaluronan degrading enzyme, such as a soluble hyaluronidase, for treatment of hyaluronan-associated conditions, diseases and disorders. In one example, the products include an additional agent or treatment. Such products can be used in methods for administering the products to treat the hyaluronan-associated diseases and conditions, for example, hyaluronan-associated cancers, for example, hyaluronan-rich tumors. The methods include administration of the hyaluronan degrading enzyme composition alone or in combination with other treatments. Also provided are methods and compositions for providing sustained treatment effects in hyaluronan-associated diseases and conditions. | 07-05-2012 |
20130028856 | Modified hyaluronidases and uses in treating hyaluronan-associated diseases and conditions - Provided are combinations, compositions and kits containing a hyaluronan degrading enzyme, such as a soluble hyaluronidase, for treatment of hyaluronan-associated conditions, diseases and disorders. In one example, the products include an additional agent or treatment. Such products can be used in methods for administering the products to treat the hyaluronan-associated diseases and conditions, for example, hyaluronan-associated cancers, for example, hyaluronan-rich tumors. The methods include administration of the hyaluronan degrading enzyme composition alone or in combination with other treatments. Also provided are methods and compositions for providing sustained treatment effects in hyaluronan-associated diseases and conditions. | 01-31-2013 |
20130202583 | Companion diagnostic for anti-hyaluronan agent therapy and methods of use thereof - Methods and diagnostic agents for identification of subjects for cancer treatment with an anti-hyaluronan agent, such as a hyaluronan-degrading enzyme, are provided. Diagnostic agents for the detection and quantification of hyaluronan in a biological sample and monitoring cancer treatment with an anti-hyaluronan agent, for example a hyaluronan-degrading enzyme, are provided. Combinations and kits for use in practicing the methods also are provided. | 08-08-2013 |
20140348817 | COMPANION DIAGNOSTIC FOR ANTI-HYALURONAN AGENT THERAPY AND METHODS OF USE THEREOF - Methods and diagnostic agents for identification of subjects for cancer treatment with an anti-hyaluronan agent, such as a hyaluronan-degrading enzyme, are provided. Diagnostic agents for the detection and quantification of hyaluronan in a biological sample and monitoring cancer treatment with an anti-hyaluronan agent, for example a hyaluronan-degrading enzyme, are provided. Combinations and kits for use in practicing the methods also are provided. | 11-27-2014 |
20150218544 | COMPANION DIAGNOSTIC FOR ANTI-HYALURONAN AGENT THERAPY AND METHODS OF USE THEREOF - Methods and diagnostic agents for identification of subjects for cancer treatment with an anti-hyaluronan agent, such as a hyaluronan-degrading enzyme, are provided. Diagnostic agents for the detection and quantification of hyaluronan in a biological sample and monitoring cancer treatment with an anti-hyaluronan agent, for example a hyaluronan-degrading enzyme, are provided. Combinations and kits for use in practicing the methods also are provided. | 08-06-2015 |