Patent application number | Description | Published |
20120208352 | METHODS AND SYSTEMS FOR FORMING THIN FILMS - A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films. | 08-16-2012 |
20120208357 | METHODS AND SYSTEMS FOR FORMING THIN FILMS - A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films. | 08-16-2012 |
20130045587 | LOW TEMPERATURE MIGRATION ENHANCED Si-Ge EPITAXY WITH PLASMA ASSISTED SURFACE ACTIVATION - Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition. | 02-21-2013 |
20130118404 | Methods and Systems for Forming Thin Films - A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films. | 05-16-2013 |
20130171350 | High Throughput Processing Using Metal Organic Chemical Vapor Deposition - A metal-organic chemical vapor deposition (MOCVD) system is provided for high throughput processing. The system comprises a chamber containing a substrate support system comprising a plurality of substrate support planets operable to support one or more substrates, and a gas emission system operable to provide a plurality of isolated environments suitable for depositing uniform layers on the substrates. The MOCVD system is operable to independently vary one or more process parameters in each isolated environment, and to provide common process parameters to all substrates for depositing one or more layers on all substrates. Methods of forming uniform layers on a substrate are provided wherein at least one of the layers is deposited in an isolated environment. | 07-04-2013 |
20130171805 | GaN Epitaxy With Migration Enhancement and Surface Energy Modification - Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example. | 07-04-2013 |
20130313566 | GaN Epitaxy With Migration Enhancement and Surface Energy Modification - Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example. | 11-28-2013 |
20140014965 | Chemical vapor deposition system with in situ, spatially separated plasma - Chemical vapor deposition (CVD) systems and methods for forming layers on a substrate are disclosed. Embodiments of the system comprise a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining site isolation. Methods of forming layers on a substrate comprise forming a first layer from a precursor on a substrate in a CVD environment, contacting the substrate with plasma in a plasma environment, wherein the forming and contacting steps are performed in the unitary system and repeating the forming and contacting steps until a layer of desired thickness is formed. The forming and contacting steps can be performed to form devices having multiple distinct layers, such as Group III-V thin film devices. | 01-16-2014 |
20140170803 | CIGS Absorber Formed By Co-Sputtered Indium - In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport. | 06-19-2014 |
20140321027 | Rechargeable Power Source For Mobile Devices Which Includes An Ultracapacitor - Provided herein is a rechargeable power source that can be quickly charged and use for charging mobile and cordless devices. The power source includes an ultracapacitor which comprises a composite structure including carbon nanotubes attached to an oxide layer. | 10-30-2014 |
20140349216 | STRUCTURE FOR ELECTRIC ENERGY STORAGE USING CARBON NANOTUBES - A composite electrode structure and methods of making and using thereof are disclosed. The structure has a metal substrate with a metal oxide layer. The average thickness of the metal oxide layer is less than 150 nm, and comprises at least a first metal and a second metal, wherein the first metal and the second metal are different elements. A plurality of carbon nanotubes is disposed on a first surface of the metal oxide layer. At least a portion of the carbon nanotubes are disposed such that one end of the carbon nanotube is positioned at least 5 nm below the surface of the metal oxide layer. | 11-27-2014 |