Patent application number | Description | Published |
20110163457 | INTEGRATED CIRCUIT MICRO-MODULE - One aspect of the present invention relates to an integrated circuit package that includes multiple layers of a planarizing, photo-imageable epoxy that are formed over a substrate. In some designs, the substrate is a silicon wafer. An integrated circuit is embedded in the epoxy. An antenna, which is electrically coupled to the active face of the integrated circuit through an interconnect layer, is formed over one of the epoxy layers. In various embodiments, at least some of the epoxy layers are positioned between the substrate and the antenna such that there is a distance of at least approximately 100 microns between the substrate and the antenna. | 07-07-2011 |
20110250730 | Method of Forming High Capacitance Semiconductor Capacitors with a Single Lithography Step - An interdigitated semiconductor capacitor with a large number of plates and a capacitance in the micro-farad range is formed on a wafer with only a single lithography step by depositing each odd layer of metal through a first shadow mask that lies spaced apart from the wafer, and each even layer of metal through a second shadow mask that lies spaced apart from the wafer. | 10-13-2011 |
20110260248 | SOI Wafer and Method of Forming the SOI Wafer with Through the Wafer Contacts and Trench Based Interconnect Structures that Electrically Connect the Through the Wafer Contacts - A silicon-on-insulator (SOI) wafer is formed to have through-the-wafer contacts, and trench based interconnect structures on the back side of the SOI wafer that electrically connect the through-the-wafer contacts. In addition, selected ones of the through-the-wafer contacts bias the bodies of the MOS transistors. | 10-27-2011 |
20110272780 | METHOD AND STRUCTURE FOR IMPROVING THE QUALILTY FACTOR OF RF INDUCTORS - An on-chip inductor structure is formed as part of an integrated circuit structure. The integrate circuit structure includes a semiconductor substrate having a top side and a back side, integrated circuit elements formed on the top side of the substrate, a conductive interconnect structure formed in contact with the integrated circuit elements and a passivation layer formed over the integrated circuit elements. The inductor structure comprises a layer of photoimageable epoxy formed on the passivation layer, a conductive inductor coil formed on the layer of photoimageable epoxy and at least one conductive via that extends from the inductor coil to the interconnect layer to provide electrical connection therebetween. Additionally, a back side trench may be formed in the back side of the semiconductor substrate beneath the inductor coil. | 11-10-2011 |
20110279214 | High Frequency Semiconductor Transformer - A semiconductor transformer provides high frequency operation by forming the primary windings of the transformer around a section of magnetic material that has a hard axis that lies substantially parallel to the direction of the magnetic field generated by the primary windings. The core can also be formed to have a number of sections where the magnetic flux follows the hard axis through each section of the core. | 11-17-2011 |
20110310579 | Inductive Structure and Method of Forming the Inductive Structure with an Attached Core Structure - An inductor is formed on a wafer by attaching a first core structure to the wafer with a pick and place operation, forming a coil with one or more thick metal layers over the first core structure, and then attaching a second core structure to the first core structure with the pick and place operation after the coil has been formed. In addition, the pick and place operation can also be used to attach one or more integrated circuits to the wafer to form an integrated inductive device. | 12-22-2011 |
20120112296 | Semiconductor Inductor with a Serpentine Shaped Conductive Wire and a Serpentine Shaped Ferromagnetic Core and a Method of Forming the Semiconductor Inductor - The inductance of an inductor is increased by forming a conductive wire to have a serpentine shape that weaves through a ferromagnetic core that has a number of segments that are connected together in a serpentine shape where each segment of the ferromagnetic core also has a number of sections that are connected together in a serpentine shape. | 05-10-2012 |
20120161294 | Method of Batch Trimming Circuit Elements - Multiple wafers that each has multiple high-precision circuits and corresponding trim control circuits are batch trimmed in a process where each wafer is formed to include openings that expose trimmable circuit elements that are internal to the circuitry of the high-precision circuits. The high-precision circuits and trim control circuits are electrically activated during the trimming phase by metal traces that run along the saw streets. The method attaches a wafer contact structure to each wafer to electrically activate the metal traces. The method places the wafers with the wafer contact structures into a solution where the exposed trimmable circuit elements are electroplated or anodized when the actual output voltage of a high-precision circuit does not match the predicted output voltage of the high-precision circuit. | 06-28-2012 |
20120217610 | Bonded Semiconductor Structure With Pyramid-Shaped Alignment Openings and Projections - A bonded semiconductor structure is formed in a method that first forms a female semiconductor structure with pyramid-shaped openings and a male semiconductor structure with pyramid-shaped projections, and then inserts the projections into the openings to align the male semiconductor structure to the female semiconductor structure for bonding. | 08-30-2012 |
20120217625 | INTEGRATED CIRCUIT MICRO-MODULE - One aspect of the present invention relates to an integrated circuit package that includes multiple layers of a planarizing, photo-imageable epoxy that are formed over a substrate. In some designs, the substrate is a silicon wafer. An integrated circuit is embedded in the epoxy. An antenna, which is electrically coupled to the active face of the integrated circuit through an interconnect layer, is formed over one of the epoxy layers. In various embodiments, at least some of the epoxy layers are positioned between the substrate and the antenna such that there is a distance of at least approximately 100 microns between the substrate and the antenna. | 08-30-2012 |
20120280781 | METHOD OF MAKING A CONTROLLED SEAM LAMINATED MAGNETIC CORE FOR HIGH FREQUENCY ON-CHIP POWER INDUCTORS - A controlled seam magnetic core lamination utilizable in an inductor structure includes a magnetic base and first and second spaced-apart magnetic sidewalls extending substantially orthogonally from the base to define a seam therebetween. The controlled seam magnetic core lamination is utilizable in an inductor structure that includes: a non-conductive lower mold; a plurality of spaced-apart controlled seam lower laminations formed in the lower mold, each magnetic lower lamination having a horizontal base and first and second spaced-apart sidewalls extending substantially vertically upward from the base to define a seam therebetween; a non-conductive isolation layer formed on the lower mold and the magnetic lower laminations; a conductive trace formed on the isolation layer; a non-conductive upper mold formed over the isolation layer and the conductive trace; and a plurality of spaced-apart controlled seam magnetic upper laminations formed in the upper mold, each magnetic upper lamination having a horizontal base and first and second spaced-apart sidewalls that extend substantially vertically upward from the base to define a seam therebetween. | 11-08-2012 |
20130062725 | SYSTEM AND METHOD OF GALVANIC ISOLATION IN DIGITAL SIGNAL TRANSFER INTEGRATED CIRCUITS UTILIZING CONDUCTIVITY MODULATION OF SEMICONDUCTOR SUBSTRATE - A galvanic isolation system provides galvanic isolation in digital transfer integrated circuits by using conductivity modulation of the semiconductor substrate. Modulation of the conductivity of the substrate affects eddy current losses of a (differential) RF inductor that is isolated from the substrate by a sufficient amount of dielectric material, which provides a basis for signal transfer from the modulated substrate to the inductor across the isolation barrier. | 03-14-2013 |