Patent application number | Description | Published |
20090004386 | Protective Coating of Silver - In the method, silver is protected against tarnishing using an Atomic Layer Deposition method. In the Atomic Layer Deposition method, a thin film coating is formed 5 on the surface of silver by depositing successive molecule layers of the coating material. For example aluminium oxide (Al 2O3) or zirconium oxide may be used as the coating material. | 01-01-2009 |
20090031947 | Reactor - A reactor for an atomic layer deposition (ALD) method, the reactor comprising a vacuum chamber which has a first end wall provided with a loading hatch, a second end wall provided with a rear flange, side walls/casing connecting the first and the second end walls, and at least one source material fitting for feeding source materials into the vacuum chamber of the reactors. According to the invention, at least one of the source material fittings is provided in the side wall/casing of the vacuum of the reactor. | 02-05-2009 |
20090078203 | HOT SOURCE - A hot source for vapour deposition apparatuses for supplying source substance into a reactor, the source comprising a source container having a source space for the source substance. The source further comprises a lid comprising first heating means for heating the lid, the lid being detachably installable in the source container in such a way that the heat generated by the first heating means is transmitted by conduction to the source container and further to the source space to heat the source substance. | 03-26-2009 |
20090169743 | Arrangement in Connection with ALD Reactor - The invention relates to a loading apparatus for an ALD reactor, the ALD reactor comprising a vacuum chamber ( | 07-02-2009 |
20090255470 | ALD REACTOR - The invention relates to a reaction chamber of an ALD reactor which comprises a bottom wall, a top wall and side walls extending between the bottom wall and the top wall which define an inner portion ( | 10-15-2009 |
20090277390 | Source, an Arrangement for Installing a Source, and a Method for Installing and Removing a Source - The invention relates to an arrangement for installing a source into a gas deposition reactor. The arrangement comprises at least one source fitting for the source such that the source fitting is connected to a reaction space of the gas deposition reactor, and a source installable at least partly inside the source fitting or a source space connected to the source fitting. According to the invention, the arrangement further comprises reception means in the source fitting for receiving the source, and charging means for installing the source in place in the source fitting for use, and a chamber ( | 11-12-2009 |
20100072429 | DEVICE AND METHOD FOR PRODUCING NANOTUBES - The invention relates to an apparatus for producing nanotubes, the apparatus being adapted to produce doped and/or undoped single-walled or multi-walled nanotubes, the apparatus comprising at least a thermal reactor. In accordance with the invention, the reactor is at least of the hottest part thereof and at least partly manufactured from a material that is at least partly sublimed into the thermal reactor as a result of the thermal reactor being heated, and the sublimed material at least partly participates in the growth of the nanotubes. | 03-25-2010 |
20100285205 | COATING METHOD - The invention relates to a process for coating and/or doping a surface of a substrate, an inner surface of a structure or another piece to be processed in a reaction space with the atomic layer deposition method (ALD method). In the process the substrate surface to be processed is subjected alternately to iterated, saturated surface reactions by feeding successive pulses of starting materials into the reaction space. In accordance with the invention, a pulse of starting materials, whose amount is predetermined, is fed into the reaction space; the amount/concentration of the starting materials and/or reaction products thereof is measured in the reaction space during and/or after the pulse or on a continuous basis; the amount of starting materials to be fed into the reaction space in a subsequent cycle is determined on the basis of the measurement results obtained in step b); and a next pulse of starting materials, whose amount corresponds to the measurement results obtained in step c), is fed into the reaction space. | 11-11-2010 |
20110003087 | METHOD AND APPARATUS FOR GENERATING PLASMA - A reaction chamber of a reactor for coating or treating a substrate by an atomic layer deposition process (ALD) by exposing the substrate to alternately repeated surface reactions of two or more gas-phase reactants. The reaction chamber is configured to generate capacitively coupled plasma and comprises a reaction space within said reaction chamber, a first inlet to guide gases into the reaction chamber and an outlet to lead gases out of the reaction chamber. The reaction chamber is configured to lead the two or more reactants into the reaction chamber such that the two or more reactants may flow through the reaction space across the substrate in a direction essentially parallel to the inner surface of the lower wall. | 01-06-2011 |
20110003125 | GLASS PRODUCT AND A METHOD FOR MANUFACTURING A GLASS PRODUCT - A glass product of the present invention ( | 01-06-2011 |
20110265719 | REACTION CHAMBER - A reaction chamber for an atomic layer deposition reactor is provided. The reaction chamber includes outer walls for providing a reaction space inside the reaction chamber. At least one of the outer walls of the reaction chamber is made from a flexible thinsheet. | 11-03-2011 |
20110274837 | ALD REACTOR, METHOD FOR LOADING ALD REACTOR, AND PRODUCTION LINE - An ALD reactor for treating one or more substrates is provided. The ALD reactor includes at least one reaction chamber which has a front plate including gas connections for introducing starting materials, flushing gases and the like gases into the reaction chamber. In addition, the front plate is arranged for being placed over the substrate for closing the reaction chamber and at distance from the substrate surface for opening the reaction chamber such that the substrate is arranged for being loaded below, above or in front of the front plate, when the reaction chamber is in the open state, in which the front plate is at a distance from the substrate and such that the substrate is treatable by the ALD method in the closed state of the reaction chamber, in which the front plate is placed onto the substrate. | 11-10-2011 |
20120067284 | APPARATUS - An apparatus for carrying out atomic layer deposition onto a surface of a substrate by exposing the surface of the substrate to alternate starting material surface reactions, the apparatus including two or more low-pressure chambers, two or more separate reaction chambers arranged to be placed inside the low-pressure chambers, and at least one starting material feed system common to two or more low-pressure chambers for carrying out atomic layer deposition. The apparatus includes at least one loading device arranged to load and unload substrates to/from the reaction chamber and further to load and unload the reaction chambers to/from the low-pressure chambers. | 03-22-2012 |
20130149446 | NOZZLE HEAD AND APPARATUS - Described herein is an apparatus and nozzle head for coating a surface of a substrate. The apparatus comprising a process chamber having inside a gas atmosphere, a nozzle head arranged inside the process chamber, precursor supply and discharge means. The nozzle head including one or more first precursor nozzles for subjecting the surface of the substrate to the first precursor, one or more second precursor nozzles for subjecting the surface of the substrate to the second precursor and one or more purge gas channels between the first and second precursor zones. In certain aspects, the purge gas channel is at least partly open to the gas atmosphere comprising purge gas for subjecting the surface of the substrate to purge gas. | 06-13-2013 |
20130164458 | APPARATUS AND METHOD - The invention is related to an apparatus and a method for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. According to the invention a first starting material is fed on the surface of the substrate locally by means of a source by moving the source in relation to the substrate, and the surface of the substrate processed with the first starting material is exposed to a second starting material present in the atmosphere surrounding the source. | 06-27-2013 |
20130199446 | APPARATUS - Disclosed is an apparatus for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes at least one nozzle head having two or more two or more precursor zones for subjecting the surface of the substrate to at least the first and second precursors and a moving mechanism for moving the nozzle head in oscillating movement between a first end position and a second end position. The moving mechanism is arranged to store at least part of the kinetic energy of the nozzle head released in oscillating movement of the nozzle head. | 08-08-2013 |
20130269608 | APPARATUS, METHOD AND REACTION CHAMBER - The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel. | 10-17-2013 |
20140335272 | PROTECTIVE COATING OF SILVER - In the method, silver is protected against tarnishing using an Atomic Layer Deposition method. In the Atomic Layer Deposition method, a thin film coating is formed on the surface of silver by depositing successive molecule layers of the coating material. For example aluminium oxide (Al | 11-13-2014 |