Patent application number | Description | Published |
20140254457 | METHOD AND APPARATUS FOR RESOLVING CALL COLLISIONS IN A DIGITAL CONVENTIONAL DIRECT MODE - A process for resolving call collisions in a digital conventional direct mode includes monitoring a direct mode communication channel for transmissions from other direct mode radios in the plurality of direct mode radios. In response to detecting a new call request: identifying a last radio to transmit on the direct mode channel, transmitting a new call request for receipt by the last direct mode radio to transmit, monitoring the direct mode channel for a response from the last radio to transmit, and if a call grant granting the new call request is received from the last radio to transmit, initiating the new direct mode call on the direct mode communication channel. If the call grant is not received, at least temporarily refraining from initiating the new direct mode call. | 09-11-2014 |
20140254458 | METHOD AND APPARATUS FOR RESOLVING CALL COLLISIONS IN A DIGITAL CONVENTIONAL DIRECT MODE - A process for resolving call collisions in a digital conventional direct mode includes monitoring a direct mode communication channel for transmissions from other direct mode radios in the plurality of direct mode radios. In response to detecting a new call request: identifying a last radio to transmit on the direct mode channel, transmitting a new call request for receipt by the last direct mode radio to transmit, monitoring the direct mode channel for a response from the last radio to transmit, and if a call grant granting the new call request is received from the last radio to transmit, initiating the new direct mode call on the direct mode communication channel. If the call grant is not received, at least temporarily refraining from initiating the new direct mode call. | 09-11-2014 |
20150312781 | METHOD AND APPARATUS FOR RESPONDING TO A POTENTIAL MASS RANDOM ACCESS EVENT - A radio controller monitors a radio channel for a first period of time and determines a first indication of signals received without detecting synchronization or with detecting synchronization but failing error correction during that time. Responsive to determining that the first indication is above a predetermined threshold indicative of an interference condition, causing an instruction to be broadcast identifying a subset of subscriber devices allowed transmitting random access requests on the radio channel. The radio controller monitors the radio channel for a second period of time and determines a second indication during that time. If the second indication is an improvement over the first indication, the radio controller determines that the interference condition is caused by the mass random access event. | 10-29-2015 |
20160057782 | METHOD FOR RESOLVING CALL COLLISIONS IN A DIGITAL CONVENTIONAL DIRECT MODE - A process for resolving call collisions in a digital conventional direct mode includes monitoring a direct mode communication channel for transmissions from other direct mode radios in the plurality of direct mode radios. In response to detecting a new call request: identifying a last radio to transmit on the direct mode channel, transmitting a new call request for receipt by the last direct mode radio to transmit, monitoring the direct mode channel for a response from the last radio to transmit, and if a call grant granting the new call request is received from the last radio to transmit, initiating the new direct mode call on the direct mode communication channel. If the call grant is not received, at least temporarily refraining from initiating the new direct mode call. | 02-25-2016 |
Patent application number | Description | Published |
20100189881 | CARBON-BASED ULTRACAPACITOR - A method of manufacturing a high surface area per unit weight carbon electrode includes providing a substrate, depositing a carbon-rich material on the substrate to form a film, and after the depositing, activating the carbon-rich material to increase the surface area of the film of carbon-rich material. Due to the activation process being after deposition, this method enables use of low cost carbon-rich material to form a carbon electrode in the capacitor. The electrode may be used in capacitors, ultracapacitors and lithium ion batteries. The substrate may be part of the electrode, or it may be sacrificial—being consumed during the activation process. The carbon-rich material may include any of carbonized material, carbon aerogel and metal oxides, such as manganese and ruthenium oxide. The activation may include exposing the carbon-rich material to carbon dioxide at elevated temperature, in the range of 300 to 900 degrees centigrade. This method may be used to make both symmetric and asymmetric ultracapacitors. | 07-29-2010 |
20110315186 | Method of manufacturing thin crystalline silicon solar cells using recrystallization - Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell. | 12-29-2011 |
20120156819 | GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER - Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described. | 06-21-2012 |
20130174781 | GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER - Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described. | 07-11-2013 |
20130192524 | Continuous Substrate Processing System - A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system. | 08-01-2013 |
20130192761 | Rotary Substrate Processing System - A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system. | 08-01-2013 |
20130196078 | Multi-Chamber Substrate Processing System - A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual-substrate processing station includes two substrate support assemblies for supporting two substrates thereon. | 08-01-2013 |
20130285065 | PVD BUFFER LAYERS FOR LED FABRICATION - Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma. | 10-31-2013 |
20140264363 | Oxygen Controlled PVD Aluminum Nitride Buffer for Gallium Nitride-Based Optoelectronic and Electronic Devices - Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer. | 09-18-2014 |
20150126099 | PRINTED CHEMICAL MECHANICAL POLISHING PAD HAVING ABRASIVES THEREIN - A method of fabricating a polishing layer of a polishing pad includes determining a desired distribution of particles to be embedded within a polymer matrix of the polishing layer. A plurality of layers of the polymer matrix is successively deposited with a 3D printer, each layer of the plurality of layers of polymer matrix being deposited by ejecting a polymer matrix precursor from a nozzle. A plurality of layers of the particles is successively deposited according to the desired distribution with the 3D printer. The polymer matrix precursor is solidified into a polymer matrix having the particles embedded in the desired distribution. | 05-07-2015 |
20150348773 | ALUMINUM-NITRIDE BUFFER AND ACTIVE LAYERS BY PHYSICAL VAPOR DEPOSITION - Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time. | 12-03-2015 |
20160035937 | OXYGEN CONTROLLED PVD ALN BUFFER FOR GAN-BASED OPTOELECTRONIC AND ELECTRONIC DEVICES - Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer. | 02-04-2016 |
20160107287 | POLISHING PADS PRODUCED BY AN ADDITIVE MANUFACTURING PROCESS - Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions. | 04-21-2016 |
20160107288 | PRINTED CHEMICAL MECHANICAL POLISHING PAD - A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a base material from a first nozzle and an additive material from a second nozzle and solidifying the base and additive material to form a solidified pad material. | 04-21-2016 |
20160107290 | CMP PAD CONSTRUCTION WITH COMPOSITE MATERIAL PROPERTIES USING ADDITIVE MANUFACTURING PROCESSES - Embodiments of the disclosure generally provide polishing pads includes a composite pad body and methods for forming the polishing pads. One embodiment provides a polishing pad including a composite pad body. The composite pad body includes one or more first features formed from a first material or a first composition of materials, and one or more second features formed from a second material or a second composition of materials, wherein the one or more first features and the one or more second features are formed by depositing a plurality of layers comprising the first material or first composition of materials and second material or second composition of materials. | 04-21-2016 |
20160107295 | POLISHING PADS PRODUCED BY AN ADDITIVE MANUFACTURING PROCESS - Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions. | 04-21-2016 |
20160107381 | POLISHING ARTICLES AND INTEGRATED SYSTEM AND METHODS FOR MANUFACTURING CHEMICAL MECHANICAL POLISHING ARTICLES - A polishing article manufacturing system includes a feed section and a take-up section, the take-up section comprising a supply roll having a polishing article disposed thereon for a chemical mechanical polishing process, a print section comprising a plurality of printheads disposed between the feed section and the take-up section, and a curing section disposed between the feed section and the take-up section, the curing section comprising one or both of a thermal curing device and an electromagnetic curing device. | 04-21-2016 |
20160114458 | POLISHING PADS PRODUCED BY AN ADDITIVE MANUFACTURING PROCESS - Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions. | 04-28-2016 |