Patent application number | Description | Published |
20120292669 | FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF FORMING SAME - The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region therein; an n-channel thereunder; and n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region. | 11-22-2012 |
20130015744 | SAW FILTER HAVING PLANAR BARRIER LAYER AND METHOD OF MAKINGAANM Adkisson; James W.AACI JericoAAST VTAACO USAAGP Adkisson; James W. Jerico VT USAANM Candra; PanglijenAACI Essex JunctionAAST VTAACO USAAGP Candra; Panglijen Essex Junction VT USAANM Dunbar; Thomas J.AACI StamfordAAST CTAACO USAAGP Dunbar; Thomas J. Stamford CT USAANM Gambino; Jeffrey P.AACI WestfordAAST VTAACO USAAGP Gambino; Jeffrey P. Westford VT USAANM Jaffe; Mark D.AACI ShelburneAAST VTAACO USAAGP Jaffe; Mark D. Shelburne VT USAANM Stamper; Anthony K.AACI WillistonAAST VTAACO USAAGP Stamper; Anthony K. Williston VT USAANM Wolf; Randy L.AACI Essex JunctionAAST VTAACO USAAGP Wolf; Randy L. Essex Junction VT US - Disclosed herein is a surface acoustic wave (SAW) filter and method of making the same. The SAW filter includes a piezoelectric substrate; a planar barrier layer disposed above the piezoelectric substrate, and at least one conductor buried in the piezoelectric substrate and the planar barrier layer. | 01-17-2013 |
20130069199 | METAL INSULATOR METAL (MIM) CAPACITOR STRUCTURE - A MIM capacitor includes a dielectric cap that enhances performance and reduces damage to MIM insulators during manufacture. A cavity is formed in an insulative substrate, such as a back end of line dielectric layer, and a first metal layer and an insulator layer are conformally deposited. A second metal layer may be deposited conformally and/or to fill a remaining portion of the cavity. The dielectric cap may be an extra layer of insulative material deposited at ends of the insulator at an opening of the cavity and may also be formed as part of the insulator layer. | 03-21-2013 |
20130161283 | SAW FILTER HAVING PLANAR BARRIER LAYER AND METHOD OF MAKING - Disclosed herein is a surface acoustic wave (SAW) filter and method of making the same. The SAW filter includes a piezoelectric substrate; a planar barrier layer disposed above the piezoelectric substrate, and at least one conductor buried in the piezoelectric substrate and the planar barrier layer. | 06-27-2013 |
20140368227 | IN-LINE MEASUREMENT OF TRANSISTOR DEVICE CUT-OFF FREQUENCY - A test circuit within a semiconductor wafer that measures a cut-off frequency for a transistor device under test may include a radio frequency source, located within a region of the wafer, that generates a radio frequency signal. A biasing circuit, also located within the region, may provide a current bias setting to the transistor device under test. The biasing circuit receives the radio frequency signal and applies a buffered radio frequency signal to the transistor device under test. The biasing circuit generates a buffered output signal based on the transistor device under test generating a first output signal in response to receiving the applied buffered radio frequency signal. An rf power detector, within the region, receives the first output signal and the radio frequency signal, and generates an output voltage signal, wherein the cut-off frequency of the transistor device under test is determined from the generated output voltage signal. | 12-18-2014 |
20150042418 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes. | 02-12-2015 |
Patent application number | Description | Published |
20130113577 | TUNABLE FILTER STRUCTURES AND DESIGN STRUCTURES - Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter. | 05-09-2013 |
20130147319 | LOADING ELEMENT OF A FILM BULK ACOUSTIC RESONATOR - Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device. | 06-13-2013 |
20130169383 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes. | 07-04-2013 |
20130187246 | BACKSIDE INTEGRATION OF RF FILTERS FOR RF FRONT END MODULES AND DESIGN STRUCTURE - A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device. | 07-25-2013 |
20130187729 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode. | 07-25-2013 |
20130214877 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes. | 08-22-2013 |