Panagopoulos, US
Alexandros Panagopoulos, Astoria, NY US
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20130127859 | Methods and Apparatus for Patch-based Shape from Shading - Methods and apparatus for patch-based construction of an object shape from the shading of an image are disclosed. An image is divided into a set of image subregions. For each image subregion, a set of subregion dictionary entries is identified. Each of the set of subregion dictionary entries includes a subregion entry appearance matching an appearance of the respective image subregion and a subregion entry geometry. A set of optimal subregion dictionary entries is identified. Identifying the set of optimal subregion dictionary entries includes minimizing an energy function of the sets of subregion dictionary entries for all image subregions. Each optimal subregion dictionary entry is, for a respective one of the image subregions, a subregion entry associated with a minimum of the energy function. The shape includes a shape construction parameter from a subregion geometry entry of each optimal subregion geometry entry of the set of optimal subregion geometry entries. | 05-23-2013 |
20130127860 | Methods and Apparatus for Light Space Graphical Model in Shape from Shading - Methods and apparatus for construction of an object shape from an image using a light-space graphical model are disclosed. A set of normal vectors for a set of pixels in an image is defined. Each normal vector is defined in terms of an azimuth and a zenith measured in a spherical coordinate system centered on a light source illuminating the image. The zenith of each normal vector is constrained based on an observed shading of a respective pixel. A shape is constructed from the image. Constructing the shape includes minimizing an energy function to specify an azimuth value and a zenith value of each normal vector. Minimizing the energy function further includes constraining the azimuth of each normal vector based on an image gradient of the image at each respective pixel to enforce a coplanar assumption between the image gradient expressed in a three-dimensional space and the respective normal vector. | 05-23-2013 |
Andria M. Panagopoulos, Chicago, IL US
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20100041880 | Supramolecular Scaffolds and Methods of Making the Same - Tribenzo-1,4,7-triazacyclononane and derivatives thereof having a formula (I) are disclosed. Methods of making tribenzo-1,4,7-triazacyclononane and related compounds also are disclosed. | 02-18-2010 |
Louis Panagopoulos, Niles, IL US
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20080280310 | Testing for Blood Group Immunological Reaction Without the Use of Anti-Human Globulin - A method testing for blood antigens (known as forward blood grouping) is presented wherein known antibodies are attached to a solid surface and the red blood cell sample for immunological reaction is centrifuged to physically overcome the natural repellent force between two red cells (know in the industry as the zeta potential) and to allow for the antigen antibody reaction to occur more rapidly. A reverse blood grouping procedure utilizes synthetic or purified antigens, which are attached directly attached directly to a solid surface. The surface is then contacted with the patient's serum and then centrifuged to allow the antigen antibody reaction to occur. The cells are then washed and a second labeled antibody of known concentration is added as an indicator. This is a method of performing a major crossmatch that does not utilize anti-human immunoglobin. In an alternative major crossmatch procedure, a binder is used to attach red blood cell membranes from a blood donor and the serum from a recipient is allowed to undergo an immune reaction with these membranes on the solid surface. Antibody screening and antibody identification are carried out by attaching known antigen carrying cells to a solid surface. The solid surface is contacted with the unknown solution which will undergo an immune reaction to the extent that antibodies specific to the previously adhered antigens are present and will bind. Red blood cells or synthetic labeled particles are used as the indicator mechanism. | 11-13-2008 |
Theo Panagopoulos, San Jose, CA US
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20120156880 | RAPID AND UNIFORM GAS SWITCHING FOR A PLASMA ETCH PROCESS - An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the processing chamber, and a showerhead plate of dielectric material adjacent the dielectric window. The showerhead plate includes gas holes in fluid communication with a plenum below the dielectric window, the plenum having a gas volume of no greater than 500 cm | 06-21-2012 |
20130244440 | CHAMBER FILLER KIT FOR PLASMA ETCH CHAMBER USEFUL FOR FAST GAS SWITCHING - A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window. | 09-19-2013 |
Theodoros Panagopoulos, San Jose, CA US
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20080206483 | PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION - A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power. | 08-28-2008 |
20080230008 | PLASMA SPECIES AND UNIFORMITY CONTROL THROUGH PULSED VHF OPERATION - An apparatus for processing a substrate has a chamber, a high frequency power source, and a low frequency power source. The chamber has a first and second electrode disposed therein. The high frequency power source is electrically coupled to either the first or second electrode to supply a first RF signal. The low frequency power source electrically coupled to either the first or second electrode to supply a second RF signal. The first RF signal is pulsed on and off so as to enhance electron loss in the chamber. | 09-25-2008 |
20080236490 | PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD - A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece. | 10-02-2008 |
20090236447 | METHOD AND APPARATUS FOR CONTROLLING GAS INJECTION IN PROCESS CHAMBER - Methods and apparatus for processing substrates are provided herein. In some embodiments, a gas distribution apparatus may include a plurality of gas inlets configured to deliver a process gas to a process chamber; and a plurality of flow controllers having outlets coupled to the plurality of gas inlets for independently controlling the flow rate through each of the plurality of gas inlets. The gas distribution apparatus may be coupled to a process chamber for controlling the delivery of one or more process gases thereto. | 09-24-2009 |
20090272492 | PLASMA REACTOR WITH CENTER-FED MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub. | 11-05-2009 |
20090275206 | PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge. | 11-05-2009 |
20120285619 | ELECTROSTATIC CHUCK HAVING A PLURALITY OF HEATER COILS - An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another. | 11-15-2012 |
20130256271 | METHODS AND APPARATUSES FOR CONTROLLING PLASMA IN A PLASMA PROCESSING CHAMBER - Methods and apparatus for controlling plasma in a plasma processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coil disposed concentrically with respect to the first/center RF coil, and a RF coil set having at least a third/mid RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coil in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (relative to the direction of the currents provided to the first/center RF coil and the second/edge RF coil) is provided to the third/mid RF coil. | 10-03-2013 |
Theodoros Panagopoulos US
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20090139963 | Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution - A method is provided for processing a workpiece supported on a support surface in a chamber of a plasma reactor. A process gas is introduced into the chamber and a plasma is generated with pulse-modulated RF power. The method comprises successively repeating the following cycle: (a) concentrating the plasma in the chamber in a center-high plasma ion distribution for a first on-time duration; (b) permitting plasma to drift during a first off-time duration away from the center-high plasma ion distribution; (c) concentrating the plasma in the chamber in an edge-high plasma ion distribution for a second on-time duration; and (d) permitting plasma to drift during a second off-time duration away from the edge-high plasma ion distribution. The method further comprises adjusting a plasma process rate near a center of the workpiece by adjusting a duty cycle of the first on-time and first off-time. The method also comprises adjusting a plasma process rate near a periphery of the workpiece by adjusting a duty cycle of the second on-time and second off-time. | 06-04-2009 |