Patent application number | Description | Published |
20110269728 | METHODS AND COMPOSITIONS RELATED TO GLUCOCORTICOID RECEPTOR ANTAGONISTS AND BREAST CANCER - Embodiments of the invention are directed to methods of determining the prognosis of a breast cancer patient by evaluating the activity of the glucocorticoid receptor in tumor cells. Other embodiment include methods of treating breast cancer cells, particularly, chemo-resistant cells, with a glucocorticoid receptor antagonist and an anticancer agent or compound. | 11-03-2011 |
20140186367 | METHODS AND COMPOSITIONS RELATED TO GLUCOCORTICOID RECEPTOR ANTAGONISTS AND BREAST CANCER - Embodiments of the invention are directed to methods of determining the prognosis of a breast cancer patient by evaluating the activity of the glucocorticoid receptor in tumor cells. Other embodiment include methods of treating breast cancer cells, particularly, chemo-resistant cells, with a glucocorticoid receptor antagonist and an anticancer agent or compound. | 07-03-2014 |
20140315866 | METHODS AND COMPOSITIONS RELATED TO GLUCOCORTICOID RECEPTOR ANTAGONISTS AND BREAST CANCER - Embodiments of the invention are directed to methods of determining the prognosis of a breast cancer patient by evaluating the activity of the glucocorticoid receptor in tumor cells. Other embodiment include methods of treating breast cancer cells, particularly, chemo-resistant cells, with a glucocorticoid receptor antagonist and an anticancer agent or compound. | 10-23-2014 |
20140341849 | METHODS AND COMPOSITIONS RELATED TO GLUCOCORTICOID RECEPTOR ANTAGONISTS AND BREAST CANCER - Embodiments of the invention are directed to methods of determining the prognosis of a breast cancer patient by evaluating the activity of the glucocorticoid receptor in tumor cells. Other embodiment include methods of treating breast cancer cells, particularly, chemo-resistant cells, with a glucocorticoid receptor antagonist and an anticancer agent or compound. | 11-20-2014 |
Patent application number | Description | Published |
20080230806 | HBT and field effect transistor integration - Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BIFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices. | 09-25-2008 |
20090038678 | THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell. | 02-12-2009 |
20090044860 | METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell. | 02-19-2009 |
20100186822 | HIGH EFFICIENCY GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL WITH OXIDIZED WINDOW LAYER - The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer. | 07-29-2010 |
20100237388 | HIGH ON-STATE BREAKDOWN HETEROJUNCTION BIPOLAR TRANSISTOR - A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage V | 09-23-2010 |
20110147799 | HIGH ON-STATE BREAKDOWN HETEROJUNCTION BIPOLAR TRANSISTOR - A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage V | 06-23-2011 |
20110318866 | METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film compound solar cell before it is separated from the substrate. To separate the thin film compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film compound solar cell. | 12-29-2011 |
20120088374 | HBT and Field Effect Transistor Integration - Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices. | 04-12-2012 |
20120227798 | HIGH EFFICIENCY GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL WITH OXIDIZED WINDOW LAYER - The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer. | 09-13-2012 |
20130082239 | LIGHT EMITTING DIODE FABRICATED BY EPITAXIAL LIFT-OFF - A method of fabricating a light emitting diode using an epitaxial lift-off process includes forming a sacrificial layer on a substrate, forming a light emitting diode structure on the sacrificial layer with an epitaxial material, forming a light reflecting layer on the light emitting diode structure, and removing the sacrificial layer using an etching process to separate the substrate from the light emitting diode structure. | 04-04-2013 |
20130133730 | THIN FILM INP-BASED SOLAR CELLS USING EPITAXIAL LIFT-OFF - Methods of producing single-junction or multi-junction InP-based solar cells grown latticed-matched on a InP substrate or grown on metamorphic layers on a GaAs substrate, with the substrate subsequently removed in a nondestructive manner via the epitaxial lift-off (ELO) technique, and devices produced using the methods are described herein. | 05-30-2013 |
20130285440 | INTEGRATION OF HIGH-EFFICIENCY, LIGHTWEIGHT SOLAR SHEETS ONTO UNMANNED AERIAL VEHICLE FOR INCREASED ENDURANCE - Some embodiments include a kit for increasing endurance of a battery-powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells or applying flexible solar cells on a surface of a UAV or on a surface of a component of a UAV. The kit further include a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV. | 10-31-2013 |
20150255668 | THIN FILM INP-BASED SOLAR CELLS USING EPITAXIAL LIFT-OFF - Methods of producing single-junction or multi-junction InP-based solar cells grown latticed-matched on a InP substrate or grown on metamorphic layers on a GaAs substrate, with the substrate subsequently removed in a nondestructive manner via the epitaxial lift-off (ELO) technique, and devices produced using the methods are described herein. | 09-10-2015 |
20150310952 | Tritium Direct Conversion Semiconductor Device for Use With Gallium Arsenide or Germanium Sustrates - A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles. | 10-29-2015 |
Patent application number | Description | Published |
20090321318 | Hydrocarbon Dehydrogenation with Zirconia - A method for obtaining an olefin is disclosed, the method comprising subjecting a paraffin to dehydrogenation in the absence of oxygen and in the presence of a catalyst comprising a crystalline substrate, to obtain an olefin. The catalyst includes an inert stabilizing agent for maintaining the catalyst crystal structure. The catalyst may be regenerated by being subjected, in air, to a temperature between about 550° C. and about 750° C., for a period of time between about 15 minutes and about 4 hours. | 12-31-2009 |
20090325784 | Hydrocarbon Dehydrogenation with Zirconia - A method for obtaining an olefin is disclosed, the method comprising subjecting a paraffin to dehydrogenation in the absence of oxygen and in the presence of a catalyst comprising a crystalline substrate, to obtain an olefin. The catalyst includes an inert stabilizing agent for maintaining the catalyst crystal structure. The catalyst may be regenerated by being subjected, in air, to a temperature between about 550° C. and about 750° C, for a period of time between about 15 minutes and about 4 hours. | 12-31-2009 |
20090325791 | Hydrocarbon Dehydrogenation with Zirconia - A method for obtaining an olefin is disclosed, the method comprising subjecting a paraffin to dehydrogenation in the absence of oxygen and in the presence of a catalyst comprising a crystalline substrate, to obtain an olefin. The catalyst includes an inert stabilizing agent for maintaining the catalyst crystal structure. The catalyst may be regenerated by being subjected, in air, to a temperature between about 550° C. and about 750° C., for a period of time between about 15 minutes and about 4 hours. | 12-31-2009 |
20100323880 | EFFECT OF WET REDUCTION ON CATALYST STABILITY AND METHODS OF MAINTAINING CATALYST STABILITY - The present invention provides a method of increasing stability of a catalyst used in a dehydrogenation process. The method includes storing fresh catalyst in a reduction zone, passing a gas through the reduction zone, introducing hydrocarbons and hydrogen gas into a reactor positioned downstream from the reduction zone to facilitate a dehydrogenation reaction, and replenishing spent catalyst in the reactor with fresh catalyst from the reduction zone. The gas has a moisture content at or below about 4000 ppmv and a temperature at or below about 290° C. The reactor includes catalyst for increasing the rate of the dehydrogenation reaction. The moisture content of the gas may be reduced to at or below about 4000 ppmv by passing the gas through a drier or by using an inert gas stream. The temperature of the gas may also be reduced. | 12-23-2010 |
Patent application number | Description | Published |
20090175562 | Imaging system - A method and apparatus for reconstruction of a region of interest for an object is provided. The reconstruction of the object may be based on chords which may fill a part, all, or more than all of the region of interest. Using chords for reconstruction may allow for reducing data acquired and/or processing for reconstructing a substantially exact image of the ROI. Moreover, various methodologies may be used in reconstructing the image, such as backprojection-filtration, and modified filtration backprojection. | 07-09-2009 |
20110170757 | Imaging System - A method and apparatus for reconstruction of a region of interest for an object is provided. The reconstruction of the object may be based on chords which may fill a part, all, or more than all of the region of interest. Using chords for reconstruction may allow for reducing data acquired and/or processing for reconstructing a substantially exact image of the ROI. Moreover, various methodologies may be used in reconstructing the image, such as backprojection-filtration, and modified filtration backprojection. | 07-14-2011 |
20120215090 | IMAGING SYSTEM - A method and apparatus for reconstruction of a region of interest for an object is provided. The reconstruction of the object may be based on chords which may fill a part, all, or more than all of the region of interest. Using chords for reconstruction may allow for reducing data acquired and/or processing for reconstructing a substantially exact image of the ROI. Moreover, various methodologies may be used in reconstructing the image, such as backprojection-filtration, and modified filtration backprojection. | 08-23-2012 |
Patent application number | Description | Published |
20110044546 | Image Reconstruction From Limited or Incomplete Data - A system and method are provided for reconstructing images from limited or incomplete data, such as few view data or limited angle data or truncated data (including exterior and interior data) generated from divergent beams. In one aspect of the invention, the method and apparatus iteratively constrains the variation of an estimated image in order to reconstruct the image. As one example, a divergent beam maybe used to generate data (“actual data”). As discussed above, the actual data may be less than sufficient to exactly reconstruct the image by conventional techniques, such as FBP. In order to reconstruct an image, a first estimated image may be generated. Estimated data may be generated from the first estimated image, and compared with the actual data. The comparison of the estimated data with the actual data may include determining a difference between the estimated and actual data. The comparison may then be used to generate a new estimated image. For example, the first estimated image may be combined with an image generated from the difference data to generate a new estimated image. In order to generate the image for the next iteration, the variation of the new estimated image may be constrained. For example, the variation of the new estimated image may be at least partly constrained in order to lessen or reducing the total variation of the image. | 02-24-2011 |
20140161332 | IMAGE RECONSTRUCTION FROM LIMITED OR INCOMPLETE DATA - A system and method are provided for reconstructing images from limited or incomplete data, such as few view data or limited angle data or truncated data (including exterior and interior data) generated from divergent beams. In one aspect of the invention, the method and apparatus iteratively constrains the variation of an estimated image in order to reconstruct the image. As one example, a divergent beam may be used to generate data (“actual data”). As discussed above, the actual data may be less than sufficient to exactly reconstruct the image by conventional techniques, such as FBP. In order to reconstruct an image, a first estimated image may be generated. Estimated data may be generated from the first estimated image, and compared with the actual data. The comparison of the estimated data with the actual data may include determining a difference between the estimated and actual data. The comparison may then be used to generate a new estimated image. For example, the first estimated image may be combined with an image generated from the difference data to generate a new estimated image. In order to generate the image for the next iteration, the variation of the new estimated image may be constrained. For example, the variation of the new estimated image may be at least partly constrained in order to lessen or reducing the total variation of the image. | 06-12-2014 |
20150146949 | IMAGE RECONSTRUCTION FROM LIMITED OR INCOMPLETE DATA - A system and method are provided for reconstructing images from limited or incomplete data, such as few view data or limited angle data or truncated data generated from divergent beams. The method and apparatus may iteratively constrain the variation of an estimated image in order to reconstruct the image. To reconstruct an image, a first estimated image may be generated. Estimated data may be generated from the first estimated image, and compared with the actual data. The comparison of the estimated data with the actual data may include determining a difference between the estimated and actual data. The comparison may then be used to generate a new estimated image. For example, the first estimated image may be combined with an image generated from the difference data to generate a new estimated image. To generate the image for the next iteration, the variation of the new estimated image may be constrained. | 05-28-2015 |