Patent application number | Description | Published |
20160064533 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device having mix-loaded therein a nonvolatile memory cell and a field effect transistor at a reduced cost. A method of manufacturing a semiconductor device includes pattering a conductor film by using an additional mask that covers a gate electrode formation region of a memory formation region and exposes a main circuit formation region (field effect transistor formation region) and thereby forming a gate electrode of a nonvolatile memory cell in the memory formation region and then forming an n | 03-03-2016 |
20160086961 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - An improvement is achieved in the performance of a semiconductor device. Over a first insulating film formed over a main surface of a semiconductor substrate located in a memory formation region and having an internal charge storage portion and over a second insulating film formed over the main surface of the semiconductor substrate located in a main circuit formation region, a conductive film is formed. Then, in the memory formation region, the conductive film and the first insulating film are patterned to form a first gate electrode and a first gate insulating film while, in the main circuit formation region, the conductive film and the second insulating film are left. Then, in the main circuit formation region, the conductive film and the second insulating film are patterned to form a second gate electrode and a second gate insulating film. | 03-24-2016 |
20160093499 | Method of Manufacturing Semiconductor Device - To provide a semiconductor device having improved performance while improving the throughput in the manufacturing steps of the semiconductor device. An insulating film portion comprised of first, second, third, fourth, and fifth insulating films is formed on a semiconductor substrate. The second insulating film is a first charge storage film and the fourth insulating film is a second charge storage film. The first charge storage film contains silicon and nitrogen; the third insulating film contains silicon and oxygen; and the second charge storage film contains silicon and nitrogen. The thickness of the third insulating film is smaller than that of the first charge storage film and the thickness of the second charge storage film is greater than that of the first charge storage film. The third insulating film is formed by treating the upper surface of the first charge storage film with a water-containing treatment liquid. | 03-31-2016 |
Patent application number | Description | Published |
20120097022 | PUMP UNIT - A pump unit includes a variable capacity pump, and a balanced piston mechanism having a piston body, connected to an operation section of a variable swash plate, provided inside a cylinder, capable of sliding in an axial direction. The balanced piston mechanism has first, second and third pressure receiving chambers provided in the cylinder. Primary side and the secondary side working fluid pressures of an actuator switching valve are respectively introduced to the first receive pressure chamber and the second pressure receiving chamber, and a set pressure that has been previously set, corresponding to a working fluid differential pressure arising before and after passing through the actuator switching valve, in a steady state of the operating position of the actuator switching valve is introduced to the third pressure receiving chamber. | 04-26-2012 |
20120097460 | HYDRAULICALLY-POWERED WORKING VEHICLE - A hydraulically powered working vehicle includes a turning section provided at an upper side of a travel unit capable of turning, and hydraulic circuits for the working vehicle. The hydraulic circuit for the working vehicle has a first actuator group including a one side traveling motor, a first variable capacity pump for driving the first actuator group, a second actuator group including an other side traveling motor and a turning motor, and a second variable capacity pump for driving the second actuator group. The second variable capacity pump is set so that a maximum value for discharge capacity per unit time becomes large compared to that of the first variable capacity pump. | 04-26-2012 |
Patent application number | Description | Published |
20080230916 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION PROCESS THEREOF - A semiconductor IC device includes a buried interconnection in interconnection layers over a semiconductor substrate, in which electrical connection of interconnections are provided over and under an interconnection layer of an embedded interconnection from among the interconnection layers such that a first connecting conductor portion within a connecting hole extending from an upper interconnection toward the interconnection layer of a predetermined buried interconnection and a second connecting conductor portion within the connecting hole extending from a lower interconnection toward the interconnection layer of the predetermined buried interconnection are electrically connected via a connecting conductor portion for relay in the connecting groove of the interconnection layer of a predetermined buried interconnection. The connecting conductor portion for relay is sized so that the length of the connecting conductor portion for relay in an extending direction of the predetermined buried interconnection is longer than that of the connecting hole. | 09-25-2008 |
20080233736 | PROCESS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer. | 09-25-2008 |
20100055926 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes the steps of carrying a substrate in a processing chamber, bringing the processing chamber into a state at a first pressure by supplying a silicon compound gas which contains carbon and hydrogen into the processing chamber, forming a silicon oxide film on the substrate by irradiating a UV light to the silicon compound gas supplied into the processing chamber in the state kept at the first pressure, and decompression process to bring the processing chamber into a state at a second pressure lower than the first pressure. This makes it possible to form the dense silicon oxide film in the trench with high aspect ratio and small width. | 03-04-2010 |
20100136786 | PROCESS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer. | 06-03-2010 |
20110230061 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes the steps of carrying a substrate in a processing chamber, bringing the processing chamber into a state at a first pressure by supplying a silicon compound gas which contains carbon and hydrogen into the processing chamber, forming a silicon oxide film on the substrate by irradiating a UV light to the silicon compound gas supplied into the processing chamber in the state kept at the first pressure, and decompression process to bring the processing chamber into a state at a second pressure lower than the first pressure. This makes it possible to form the dense silicon oxide film in the trench with high aspect ratio and small width. | 09-22-2011 |
Patent application number | Description | Published |
20100155758 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR THE SAME - A light emitting device is provided, including a resin which can be manufactured according to a simple process and deliver a desired scattering property. The light emitting device is manufactured according to a step for mixing two or more types of immiscible liquid materials to obtain a composition containing at least two types of materials phase-separated in a sea-island structure, and a step for arranging the composition in proximity to an LED chip, curing the composition with the sea-island structure being maintained, thereby forming an encapsulation resin. Accordingly, it is possible to form an island region which serves as a scattering center, according to a simple step of mixing materials. | 06-24-2010 |
20110309388 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD - A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface. | 12-22-2011 |
20120236582 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD - A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces. | 09-20-2012 |
20140233210 | SEMICONDUCTOR LIGHT SOURCE APPARATUS - A semiconductor light source apparatus can emit various color lights having high brightness. The light source apparatus can include a phosphor layer directly disposed on a reflective layer and metallic bumps located between the reflective layer and a radiating substrate. The phosphor layer can be composed of at least one of a glass phosphor and a phosphor ceramic and can include at least one of a yellow phosphor, a red phosphor, a green phosphor and a blue phosphor. The light source can be located adjacent the phosphor layer so that light having high brightness emitted from the light source can be reflected on the reflective layer and heat of the phosphor layer can radiate from the radiating substrate via the metallic bumps. Thus, the disclosed subject matter can provide semiconductor light source apparatuses that can emit various color lights having high brightness, and which can be used for headlight, etc. | 08-21-2014 |
Patent application number | Description | Published |
20110244677 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A method of manufacturing a semiconductor device includes: forming a first conductive film on a substrate; forming an insulating film to cover the conductive film; etching the insulating film to form an opening portion to expose at least a portion of the first conductive film in the insulating film; irradiating the opening portion with ultraviolet rays in a reduction gas atmosphere; forming a barrier metal film in the opening portion; and forming a second conductive film on the barrier metal film. | 10-06-2011 |
20130161795 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, PROCESSING METHOD OF SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER - A disclosed method of manufacturing a semiconductor device includes forming a groove on a first surface of a semiconductor wafer along an outer periphery of the semiconductor wafer, forming a semiconductor device on the first surface, forming an adhesive layer on the first surface to cover the semiconductor device, bonding a support substrate to the first surface by the adhesive layer, grinding after the adhering of the support substrate a second surface of the semiconductor wafer opposite to the first surface, and dicing after the grinding the semiconductor wafer into individual semiconductor chips. | 06-27-2013 |
20130247825 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A method of manufacturing a semiconductor device includes: forming a first conductive film on a substrate; forming an insulating film to cover the conductive film; etching the insulating film to form an opening portion to expose at least a portion of the first conductive film in the insulating film; irradiating the opening portion with ultraviolet rays in a reduction gas atmosphere; forming a barrier metal film in the opening portion; and forming a second conductive film on the barrier metal film. | 09-26-2013 |
20130320508 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes: forming a first electrode on a first semiconductor substrate; coating the semiconductor substrate with an insulating material having a first viscosity at a first temperature, having a second viscosity lower than the first viscosity at a second temperature higher than the first temperature, and having a third viscosity higher than the second viscosity at a third temperature higher than the second temperature; and forming a first insulating film by curing the insulating material. In this method, the forming the first insulating film includes: bringing the insulating material to the second viscosity by heating the insulating material under a first condition; and bringing the insulating material to the third viscosity by heating the insulating material under a second condition. The first condition and the second condition are different in their temperature rising rate. | 12-05-2013 |
20140306339 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device has a semiconductor substrate having a first surface and a second surface, a through electrode penetrating through the semiconductor substrate and having a protrusion protruding from the second surface, and an insulation layer on the second surface, which covers the side surface of the protrusion, has an opening through which to expose the end surface of the protrusion, and has a thickness greater than the length of the protrusion. | 10-16-2014 |
20150014820 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUPPORT SUBSTRATE-ATTACHED WAFER - A recessed portion is formed around an outer edge of a device wafer at a peripheral edge portion of a first face of the device wafer. A recessed portion is formed around an outer edge of a support substrate, at a bonding face of the support substrate. The first face of the device wafer and the bonding face of the support substrate are bonded together by an adhesive. The device wafer is ground from a second face side, on the opposite side to the first face | 01-15-2015 |
20150069586 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes: forming a first electrode on a first semiconductor substrate; coating the semiconductor substrate with an insulating material having a first viscosity at a first temperature, having a second viscosity lower than the first viscosity at a second temperature higher than the first temperature, and having a third viscosity higher than the second viscosity at a third temperature higher than the second temperature; and forming a first insulating film by curing the insulating material. In this method, the forming the first insulating film includes: bringing the insulating material to the second viscosity by heating the insulating material under a first condition; and bringing the insulating material to the third viscosity by heating the insulating material under a second condition. The first condition and the second condition are different in their temperature rising rate. | 03-12-2015 |
20150235901 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device has a semiconductor substrate having a first surface and a second surface, a through electrode penetrating through the semiconductor substrate and having a protrusion protruding from the second surface, and an insulation layer on the second surface, which covers the side surface of the protrusion, has an opening through which to expose the end surface of the protrusion, and has a thickness greater than the length of the protrusion. | 08-20-2015 |
Patent application number | Description | Published |
20080233734 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate, forming a trench in the first insulating film, forming a metal interconnect in the trench, exposing the surface of the metal interconnect to a silicon-containing gas, performing a plasma treatment of the surface of the metal interconnect after exposing to the silicon-containing gas, and forming a second insulating film over the metal interconnect. | 09-25-2008 |
20080305645 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH | 12-11-2008 |
20090093130 | Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device - A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O | 04-09-2009 |
20090146309 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a first insulating film formed over a semiconductor substrate, a first opening formed in the first insulating film, a first manganese oxide film formed along an inner wall of the first opening, a first copper wiring embedded in the first opening, and a second manganese oxide film formed on the first copper wiring including carbon. | 06-11-2009 |
20100012991 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, comprising: forming n-channel field-effect transistors on a silicon substrate; forming a first insulating film covering the field-effect transistors; shrinking the first insulating film; forming a second insulating film over the first insulating film; and shrinking the second insulating film, wherein the forming an insulating film covering the field-effect transistors and the shrinking the insulating film are repeated a plurality of time. | 01-21-2010 |
20110183515 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a first insulating film formed over a semiconductor substrate, a first opening formed in the first insulating film, a first manganese oxide film formed along an inner wall of the first opening, a first copper wiring embedded in the first opening, and a second manganese oxide film formed on the first copper wiring including carbon. | 07-28-2011 |
20120252227 | SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O | 10-04-2012 |
20120322272 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, comprising: forming n-channel field-effect transistors on a silicon substrate; forming a first insulating film covering the field-effect transistors; shrinking the first insulating film; forming a second insulating film over the first insulating film; and shrinking the second insulating film, wherein the forming an insulating film covering the field-effect transistors and the shrinking the insulating film are repeated a plurality of time. | 12-20-2012 |
20130330912 | SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O | 12-12-2013 |
Patent application number | Description | Published |
20140197908 | POLARIZATION COUPLER - A polarization coupler includes: connector waveguide that connects circular waveguide with quadrangular waveguide arranged in an axial direction of circular waveguide and having short side shorter than an inner diameter of circular waveguide; flat conductor wall formed over connector and circular waveguides, and dividing the inside of connector and circular waveguides arranged parallel to an extending direction of long side of quadrangular waveguide; first inclined surface formed on inner wall of connector waveguide at a position facing one surface of conductor wall, and inclined toward conductor wall as coming closer to quadrangular waveguide; second inclined surface formed on the inner wall of connector waveguide at a position facing the other surface of conductor wall, and inclined toward conductor wall as coming closer to quadrangular waveguide; and coupling hole, formed in circular waveguide, for extracting one polarization-divided by conductor wall out of electromagnetic waves propagated through circular waveguide. | 07-17-2014 |
20140292439 | DIRECTIONAL COUPLER - Disclosed is a directional coupler including a broadside coupled line | 10-02-2014 |
20140292440 | DIRECTIONAL COUPLER - Disclosed is a directional coupler including a first hollow portion | 10-02-2014 |
20150008991 | PLANAR CIRCUIT TO WAVEGUIDE TRANSITION - Openings are formed by removing part of a ground conductor, and a differential signal line including signal line conductors is configured with some of the openings. In addition, a metal block is mounted thereon to cover the opening to thus configure a waveguide using the metal block and ground conductor as wall surfaces. A planar circuit to waveguide transition according to the above can achieve traveling wave conversions from a waveguide mode to a slot mode, and from the slot mode to a differential mode without utilizing resonance, which makes it possible to align a dominant direction of an electric field by the three ones; thus, a wider bandwidth can be expected. Thus, the wider bandwidth can be achieved with a simple layer structure. | 01-08-2015 |
20160006118 | ANTENNA DEVICE AND ARRAY ANTENNA DEVICE - An antenna device includes: a cavity part | 01-07-2016 |
Patent application number | Description | Published |
20080294913 | DISK ARRAY CONTROLLER, DISK ARRAY CONTROL METHOD AND STORAGE SYSTEM - Provided is a disk array controller capable of speeding up the processing by simultaneously execution the encryption/decryption of a non parallel block cipher modes of operation. In a disk array controller for controlling a disk array according to a disk access request from a host system, a plurality of non parallel mode encryption/decryption target data are divided into a plurality of messages unrelated to the encryption/decryption processing, partitioning non parallel mode encryption/decryption target data belonging to the respective messages into a plurality of block data, storing each block data belonging to the respective messages by allocating it each line of Rnd[ | 11-27-2008 |
20090199010 | SIGNATURE DEVICE, VERIFICATION DEVICE, PROGRAM, SIGNATURE METHOD, VERIFICATION METHOD, AND SYSTEM - An efficient signature technology is provided, which is capable of arbitrary extraction and storage from a plurality of pieces of data and which can make a signature length relatively short. In a signature device ( | 08-06-2009 |
20100040226 | DEVICE, PROGRAM AND METHOD FOR GENERATING HASH VALUES - The invention aims to provide a hash function whose safety can be evaluated. To achieve this, a message that is input to a message blocking unit | 02-18-2010 |
20120311340 | WIRELESS COMMUNICATIONS DEVICE AND AUTHENTICATION PROCESSING METHOD - An authentication method is provided which is capable of performing message authentication within an allowable time regardless of the magnitude of the number of messages and performing message authentication high in accuracy within a range for which the allowable time allows. Upon transmission by wireless communications with another mobile or a fixed station, a message authentication code of communication data and a digital signature are generated (S | 12-06-2012 |
20130067220 | COMMUNICATION SYSTEM, VEHICLE-MOUNTED TERMINAL, ROADSIDE DEVICE - There is a need to reduce the certificate verification time in a communication system. | 03-14-2013 |
20140303881 | COMMUNICATION SYSTEM, VEHICLE-MOUNTED TERMINAL, ROADSIDE DEVICE - There is a need to reduce the certificate verification time in a communication system. | 10-09-2014 |
Patent application number | Description | Published |
20140108787 | IN-VEHICLE COMMUNICATION SYSTEM - The present invention is directed to solve a problem that time is required for a process related to verification of a public key certificate of a message sender. An in-vehicle device mounted on a vehicle has a memory for holding information of a device which failed in verification of a public key certificate. At the time of performing communication between vehicles or between a vehicle and a roadside device, a check is made to see whether or not information of a device included in a message transmitted matches information of a device which failed and held in the memory. When the information matches, verification of a public key certificate is not performed. | 04-17-2014 |
20140172287 | MOBILE TERMINAL - If identification information is updated periodically, there is such a problem that when another vehicle is receiving driving support based on transmitted identification information of an own vehicle, if the identification information of the own vehicle is updated, the operation of driving support using the identification information becomes unstable because another vehicle can no longer identify the own vehicle. | 06-19-2014 |
20150112511 | MOBILE TERMINAL - If identification information is updated periodically, there is such a problem that when another vehicle is receiving driving support based on transmitted identification information of an own vehicle, if the identification information of the own vehicle is updated, the operation of driving support using the identification information becomes unstable because another vehicle can no longer identify the own vehicle. | 04-23-2015 |