Patent application number | Description | Published |
20090136584 | TOOTHPASTE - A toothpaste filled in a container which has two chambers and is capable of simultaneously discharging two different compositions filled respectively in the two chambers when the main body of the container is pressed, wherein a ratio of a storage modulus G | 05-28-2009 |
20100008869 | METHOD FOR PREVENTING COLORATION OF CATECHINS AND DENTIFRICE COMPOSITION - The present invention relates to a method of suppressing coloration of catechins, which contains adding, to catechins, a water-soluble polymer forming a water-insoluble complex with catechins, as well as hydrogel particles containing a water-insoluble complex between catechins and a polymer forming a water-insoluble complex with catechins. Further, the present invention relates to a dentifrice composition containing hydrogel particles containing catechins and a polymer forming a water-insoluble complex with catechins, a binder and water. | 01-14-2010 |
20150209267 | METHOD OF SUPPRESSING COLORATION OF CATECHINS AND A DENTIFRICE COMPOSITION - The present invention relates to a method of suppressing coloration of catechins, which contains adding, to catechins, a water-soluble polymer forming a water-insoluble complex with catechins, as well as hydrogel particles containing a water-insoluble complex between catechins and a polymer forming a water-insoluble complex with catechins. Further, the present invention relates to a dentifrice composition containing hydrogel particles containing catechins and a polymer forming a water-insoluble complex with catechins, a binder and water. | 07-30-2015 |
Patent application number | Description | Published |
20120012803 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a lower electrode layer, a nanomaterial assembly layer, and an upper electrode layer. The nanomaterial assembly layer is provided on the lower electrode layer and includes a plurality of micro conductive bodies assembled via a gap. The upper electrode layer is provided on the nanomaterial assembly layer. The portion of the micro conductive bodies is buried at least in a lower part of the upper electrode layer. | 01-19-2012 |
20120056145 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide. | 03-08-2012 |
20120104352 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a memory device includes a nanomaterial assembly layer, a first electrode layer and a second electrode layer. The nanomaterial assembly layer is formed of an assembly of a plurality of micro conductors via gaps between the micro conductors. The first electrode layer is provided on the nanomaterial assembly layer. The second electrode layer is provided on the first electrode layer. | 05-03-2012 |
20120205609 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a memory device includes a lower electrode layer, a nanomaterial assembly layer, a protective layer and an upper electrode layer. The nanomaterial assembly layer is provided on the lower electrode layer and includes a plurality of fine conductors assembled via a gap. The protective layer is provided on the nanomaterial assembly layer, is conductive, is in contact with the fine conductors, and includes an opening. The upper electrode layer is provided on the protective layer and is in contact with the protective layer. | 08-16-2012 |
20130295743 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide. | 11-07-2013 |
20140147942 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a memory device includes a nanomaterial assembly layer, a first electrode layer and a second electrode layer. The nanomaterial assembly layer is formed of an assembly of a plurality of micro conductors via gaps between the micro conductors. The first electrode layer is provided on the nanomaterial assembly layer. The second electrode layer is provided on the first electrode layer. | 05-29-2014 |
Patent application number | Description | Published |
20110127279 | BOTTLE - Disclosed is a bottomed tubular bottle including an annular groove which is formed so as to be circumferentially and radially recessed inward along the outer peripheral surface of a body of the bottle with a bottle axis as a center and which contracts and deforms the body in the axial direction of the bottle when the internal pressure is reduced. The annular groove is recessed and formed by a first wall surface arranged on a mouth side of the bottle and a second wall surface arranged on a bottom side of the bottle. The body is formed so that the outer diameter on the bottom side is larger than the outer diameter on the mouth side with the annular groove interposed therebetween. | 06-02-2011 |
20120248059 | SYNTHETIC RESIN BOTTLE - A biaxially stretched, blow molded synthetic resin bottle with a bottom includes a sunken bottom portion that is capable of drawing upward in a reversible manner, when internal pressure goes down. This sunken bottom portion includes an inner peripheral wall portion standing from near an inner edge of a ground contact portion disposed along a peripheral foot, a central concave portion disposed at a center of the bottom, a reversible wall portion in a flat ring shape, which is reversibly deformable into an upward drawing state and which connects an upper end of the inner peripheral wall to the base of the central concave portion, and a circular rib wall portion disposed at a connection between the reversible wall portion and the upper end of the inner peripheral wall portion so as to perform the function as a peripheral rib. | 10-04-2012 |
20120248060 | SYNTHETIC RESIN BOTTLE - A biaxially stretched, blow molded synthetic resin bottle with a bottom includes a sunken bottom portion that is capable of drawing upward in a reversible manner, when internal pressure goes down. This sunken bottom portion includes an inner peripheral wall portion standing from near an inner edge of a ground contact portion disposed along a peripheral foot, a central concave portion disposed at a center of the bottom, a reversible wall portion in a flat ring shape, which is reversibly deformable into an upward drawing state and which connects an upper end of the inner peripheral wall to the base of the central concave portion, and a circular rib wall portion disposed at a connection between the reversible wall portion and the upper end of the inner peripheral wall portion so as to perform the function as a peripheral rib. | 10-04-2012 |
20130240477 | SYNTHETIC RESIN BOTTLE - A biaxially stretched, blow molded synthetic resin bottle with a bottom includes a sunken bottom portion that is capable of drawing upward in a reversible manner, when internal pressure goes down. This sunken bottom portion includes an inner peripheral wall portion standing from near an inner edge of a ground contact portion disposed along a peripheral foot, a central concave portion disposed at a center of the bottom, a reversible wall portion in a flat ring shape, which is reversibly deformable into an upward drawing state and which connects an upper end of the inner peripheral wall to the base of the central concave portion, and a circular rib wall portion disposed at a connection between the reversible wall portion and the upper end of the inner peripheral wall portion so as to perform the function as a peripheral rib. | 09-19-2013 |
20130292356 | BOTTLE - Disclosed is a bottomed tubular bottle including an annular groove which is formed so as to be circumferentially and radially recessed inward along the outer peripheral surface of a body of the bottle with a bottle axis as a center and which contracts and deforms the body in the axial direction of the bottle when the internal pressure is reduced. The annular groove is recessed and formed by a first wall surface arranged on a mouth side of the bottle and a second wall surface arranged on a bottom side of the bottle. The body is formed so that the outer diameter on the bottom side is larger than the outer diameter on the mouth side with the annular groove interposed therebetween. | 11-07-2013 |
Patent application number | Description | Published |
20080219574 | IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING METHOD - An image processing apparatus includes a first processing part selecting motion detection points for detecting a motion between images, and acquiring first motion vectors that are local motion vectors at the motion detection points, a second processing part acquiring first representative motions that are representative motions of translation, scaling and rotation based on the first motion vectors, a third processing part eliminating components of the first representative motions from the first motion vectors and acquiring second motion vectors, a fourth processing part acquiring local foreshortening motions at the motion detection points from the second motion vectors, and a fifth processing part acquiring a second representative motion that is a representative foreshortening motion from the local foreshortening motions. This can obtain information representing geometric deformation between the images by simple processing. | 09-11-2008 |
20080246848 | IMAGE STABILIZING APPARATUS, IMAGE-PICKUP APPARATUS AND IMAGE STABILIZING METHOD - An image stabilizing apparatus includes a motion vector calculating part that calculates a motion vector between a plurality of images including a displacement caused by a motion of an image-pickup apparatus, a shake-correction parameter calculating part that receives the motion vector as input to calculate a shake correction amount, and an image transforming part that performs geometric transformation of the image in accordance with the shake correction amount. The shake-correction parameter calculating part performs variation amount calculation, variation amount correction and correction amount calculation based on the motion information between the plurality of images. The image stabilizing apparatus preserves a motion in video from an intended camera work and allows image stabilization for an unintended shake. | 10-09-2008 |
20090128700 | IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING METHOD - An image processing apparatus includes a geometric converter configured to perform a geometric conversion process to a first frame image among frame images that are sequentially generated through imaging, based on motion information obtained by using a motion detector sensor, a motion vector detector configured to detect a motion vector between a geometric conversion image obtained through the geometric conversion process and a second frame image that has not undergone the geometric conversion process, an image stabilization parameter calculator configured to calculate an image stabilization parameter for different motions by using the motion information and the motion vector, and a stabilized image generator configured to generate a stabilized image through a deformation process to the second frame image or a frame image generated subsequent to the second frame image by utilizing the image stabilization parameter. | 05-21-2009 |
20110211081 | IMAGE STABILIZING APPARATUS, IMAGE PICK-UP APPARATUS AND IMAGE STABILIZING METHOD - An image stabilizing apparatus includes a motion vector calculating part that calculates a motion vector between a plurality of images including a displacement caused by a motion of an image-pickup apparatus, a shake-correction parameter calculating part that receives the motion vector as input to calculate a shake correction amount, and an image transforming part that performs geometric transformation of the image in accordance with the shake correction amount. The shake-correction parameter calculating part performs variation amount calculation, variation amount correction and correction amount calculation based on the motion information between the plurality of images. The image stabilizing apparatus preserves a motion in video from an intended camera work and allows image stabilization for an unintended shake. | 09-01-2011 |
20110267480 | IMAGE PROCESSING APPARATUS, IMAGE-PICKUP APPARATUS, AND IMAGE PROCESSING METHOD - The present invention provides an image processing apparatus capable of obtaining good shake-corrected images in electronic image stablization irrespective of changes of image-taking conditions. An image processing apparatus comprises a shake correcting part that performs coordinate transformation processing based on shake information to an input image that is generated by use of an image-pickup device, and a method changing part that changes a coordinate transformation method for the coordinate transformation processing. | 11-03-2011 |
20130010139 | IMAGE CAPTURING APPARATUS AND IMAGE PROCESSING METHOD - An image processing apparatus includes a geometric converter configured to perform a geometric conversion process to a first frame image among frame images that are sequentially generated through imaging, based on motion information obtained by using a motion detector sensor, a motion vector detector configured to detect a motion vector between a geometric conversion image obtained through the geometric conversion process and a second frame image that has not undergone the geometric conversion process, an image stabilization parameter calculator configured to calculate an image stabilization parameter for different motions by using the motion information and the motion vector, and a stabilized image generator configured to generate a stabilized image through a deformation process to the second frame image or a frame image generated subsequent to the second frame image by utilizing the image stabilization parameter. | 01-10-2013 |
Patent application number | Description | Published |
20130221401 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first electrode, a first conductivity type cathode layer, a first conductivity type base layer, a second conductivity type anode layer, a second conductivity type semiconductor layer, a first conductivity type semiconductor layer, an buried body, and a second electrode. The first conductivity type semiconductor layer is contiguous to the second conductivity type semiconductor layer in a first direction, and extends on a surface of the anode layer in a second direction that intersects perpendicularly to the first direction. The buried body includes a bottom portion and a sidewall portion. The bottom portion is in contact with the base layer. The sidewall portion is in contact with the base layer, the anode layer, the second conductivity type semiconductor layer and the first conductivity type semiconductor layer. The buried body extends in the first direction. | 08-29-2013 |
20130248882 | SEMICONDUCTOR DEVICE - In a semiconductor device, transistor cells and diode cells are formed on a single semiconductor substrate of a first conductivity type. A first semiconductor layer of a second conductivity type is formed in a transistor cell region and at a lower side of the substrate. A second semiconductor layer of the first conductivity type is formed in a region adjacent to the transistor cell region and at the lower side of the substrate. Gate electrodes are formed at an upper side of the substrate. A third semiconductor layer of the second conductivity type and a fourth semiconductor layer of the first conductivity type are formed between the gate electrodes. A fifth semiconductor layer of the first conductivity type is formed above the first semiconductor layer in the transistor cell region. A first and a second electrode are formed on both sides of the substrate. | 09-26-2013 |
20140070266 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a pair of conductive bodies, a third semiconductor layer of the second conductivity type, and a fourth semiconductor layer of the first conductivity type. The second semiconductor layer is provided on the first semiconductor layer on the first surface side. The pair of conductive bodies are provided via an insulating film in a pair of first trenches extending across the second semiconductor layer from a surface of the second semiconductor layer to the first semiconductor layer. The third semiconductor layer is selectively formed on the surface of the second semiconductor layer between the pair of conductive bodies and has a higher second conductivity type impurity concentration in a surface of the third semiconductor layer than the second semiconductor layer. | 03-13-2014 |
20140077258 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, control electrodes disposed in trenches on the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface, and control interconnects disposed on the first main surface of the semiconductor substrate and extending in a second direction perpendicular to the first direction. The semiconductor substrate includes a first semiconductor layer of a first conductivity type, second semiconductor layers of a second conductivity type on a surface of the first semiconductor layer on a first main surface side, third semiconductor layers of the first conductivity type disposed on surfaces of the second semiconductor layers on the first main surface side and extending in the second direction, and a fourth semiconductor layer of the second conductivity type on the second main surface of the semiconductor substrate. | 03-20-2014 |
20140077261 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE - An upper part of the termination region of the semiconductor substrate, an upper surface of the first diffusion layers and an upper surface of the first oxide film is etched in such a manner that the level of the upper surface of the semiconductor substrate in the termination region including the first oxide film and the first diffusion layers is lower than the level of the upper surface of the semiconductor substrate in the cell region. Then, a second oxide film is formed on the semiconductor substrate. An electrode is formed on the second oxide film so as to extend from the first region toward the cell region to the first diffusion layers in such a manner that the level of an upper surface of the electrode is lower than the level of the upper surface of the semiconductor substrate in the cell region. | 03-20-2014 |
20140084337 | SEMICONDUCTOR DEVICE - A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode. | 03-27-2014 |
20140124832 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode. | 05-08-2014 |
20140374791 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region having a second conductivity type, a first insulating layer on the first and second semiconductor regions, and field plate electrodes are provided in the first insulating layer at different distances from the first semiconductor layer. A first field plate electrode is at a first distance, a second field plate electrode is at a second distance greater than the first distance, and a third field plate electrode is at a distance greater than the second distance. The first through third field plate electrodes are electrically connected to each other and the third electrode is electrically connected to the second semiconductor region. | 12-25-2014 |
20150243656 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode. | 08-27-2015 |
Patent application number | Description | Published |
20140061875 | SEMICONDUCTOR DEVICE - According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode. | 03-06-2014 |
20140084336 | SEMICONDUCTOR DEVICE - According to one embodiment, an IGBT region includes: a collector layer of a first conductivity type, a drift layer of a second conductivity type, a body layer of the first conductivity type, and a second electrode extending to the drift layer and the body layer via a first insulating film in a stacking direction of a first electrode and the collector layer. A diode region includes: a cathode layer of the second conductivity type, the drift layer, an anode layer of the first conductivity type, and a conductive layer extending to the drift layer and the anode layer via a second insulating film in the stacking direction. The second electrode and the conductive layer are separated from one another at a predetermined distance. | 03-27-2014 |
20140284658 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first and second electrode, a first, second, third and fourth semiconductor region, and a first intermediate metal film. The first region is provided above the first electrode and has a first impurity concentration. The second region is provided above the first region and has a second impurity concentration lower than the first impurity concentration. The third region is provided above the second region and has a third impurity concentration. The fourth region is provided above the second region and has a fourth impurity concentration lower than the third impurity concentration. The second electrode is provided above the third region and the fourth region and is in ohmic contact with the third region. The intermediate metal film is provided between the second electrode and the fourth region. The intermediate metal film forms Schottky junction with the fourth region. | 09-25-2014 |
20150236104 | SEMICONDUCTOR DEVICE - According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode. | 08-20-2015 |
20150380535 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a gate electrode. The length in a first direction of a portion of the gate electrode opposing the third semiconductor region being longer than a length in the first direction of a portion of the gate electrode opposing the fifth semiconductor region. An impurity concentration of the second conductivity type of the fourth semiconductor region is higher than an impurity concentration of the second conductivity type of an intermediate portion in the third semiconductor region. At least a part of the intermediate portion is arranged with a part of the first insulating region in the third direction. At least a part of the fifth semiconductor region is not arranged with the first insulating region in the third direction. | 12-31-2015 |