Patent application number | Description | Published |
20080298553 | Particle-Beam Treatment System - Provision is made for a particle-beam treatment system in which, even during particle-beam irradiation, the shape of a multileaf collimator is monitored. The particle-beam treatment system, in which multi-layer conformal irradiation is performed while the setting of the shape of the multileaf collimator in an irradiation head is changed during particle-beam irradiation, is provided with an optical shape-monitoring unit mounted attachably and detachably in the snout portion at the downstream side of the multileaf collimator, the optical shape-monitoring unit having a shape-monitoring mirror, opposing the multileaf collimator, for monitoring the shape of the multileaf collimator; a video camera for shooting the multileaf-collimator shape reflected by the shape-monitoring mirror; and an image monitor for displaying an image of the video camera that shoots the shape of the multileaf collimator. | 12-04-2008 |
20110012028 | PARTICLE BEAM TREATMENT APPARATUS AND PARTICLE BEAM TREATMENT METHOD - When a predetermined region of a target volume is divided into multiple layers in a depth direction of particle beams and particle beams are irradiated, dose calibration is carried out separately for the divided layers. | 01-20-2011 |
20110172429 | STAT3 INHIBITOR CONTAINING QUINOLINECARBOXAMIDE DERIVATIVE AS ACTIVE INGREDIENT - The present invention provides a STATS inhibitor containing as an active ingredient, a quinolinecarboxamide derivative represented by the formula (I) (in the formula, W represents a bond or an alkylene chain; X represents O, S, or NR | 07-14-2011 |
20110244638 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film. | 10-06-2011 |
20110248698 | BIOSENSOR AND DETECTION METHOD OF TARGET SUBSTANCE - A biosensor includes at least two field effect transistor devices, each including a silicon substrate, a silicon oxide film formed on a surface of the silicon substrate, a source electrode disposed on the silicon oxide film, a drain electrode disposed on the silicon oxide film, a channel for connecting the source electrode and the drain electrode, and a gate electrode capable of controlling the channel, wherein one of the at least two field effect transistor devices is provided with a reaction field on which a target recognition molecule is to be immobilized, and the other one of the at least two field effect transistor devices is provided with a reaction field on which a target recognition molecule is not to be immobilized. | 10-13-2011 |
20120201649 | METHODS AND SYSTEMS FOR PORTABLE TURNTABLES OR ROTATION PLATFORMS BUILT BY ASSEMBLY - Portable turntables or rotation platforms built by assembly enable rotation of vehicles and/or loads of significant size and/or weight. The portable turntables or rotation platforms are highly effective and efficient with respect to materials, construction and environmental impact. | 08-09-2012 |
20150367854 | DRIVING SUPPORT APPARATUS FOR VEHICLE - When an oncoming vehicle in an oncoming lane is detected in the case where a vehicle equipped with a driving support apparatus moves to a position across a portion of a boundary between an original traveling lane of the vehicle and the oncoming lane in order to pass a preceding vehicle, passing control is interrupted. When the departure of the oncoming vehicle from the oncoming lane is confirmed, the interruption of the passing control is canceled and the passing is performed. When the oncoming vehicle does not depart, or when it the oncoming vehicle is determined to depart but a vehicle following the oncoming vehicle is detected, the interruption of the passing control is maintained and the vehicle is returned to behind the preceding vehicle in the original traveling lane. | 12-24-2015 |
20150375748 | DRIVING SUPPORT APPARATUS FOR VEHICLE - When a vehicle equipped with a driving support apparatus moves from an original traveling lane into a lane for passing in order to pass a preceding vehicle and an oncoming vehicle appears in the lane for passing, the safe passing of the preceding vehicle is determined to be impossible and the passing is interrupted even when the oncoming vehicle decelerates, in the case where a deceleration change amount the oncoming vehicle is smaller than a threshold. On the other hand, when the deceleration change amount of the oncoming vehicle is equal to or greater than the threshold, whereby safety with respect to surrounding vehicles can be confirmed, and it is determined the vehicle can be safely returned in front of the preceding vehicle, the passing of the preceding vehicle is performed. | 12-31-2015 |