Patent application number | Description | Published |
20100031858 | Pulverized Coal Boiler - The present invention provides a highly reliable pulverized coal boiler that ensures suppression of a rise in flame temperature caused during the combustion of an unburnt gas in a furnace when combustion air is supplied from after-air ports so as to reduce the concentration of thermal NOx generated during the combustion. | 02-11-2010 |
20100223926 | Dust Coal Boiler, Dust Coal Combustion Method, Dust Coal Fuel Thermal Power Generation System, and Waste Gas Purification System for Dust Coal Boiler - A pulverized coal thermal power generation system that significantly reduces the amount of NOx emissions from a boiler and does not require a denitration unit is provided. When a denitration unit is not used, performance to remove mercury from a boiler waste gas is reduced. A waste gas purification system for a pulverized coal boiler, that compensates for this is provided. | 09-09-2010 |
20100224108 | PULVERIZED COAL-FIRED BOILER AND PULVERIZED COAL BURNING METHOD - A pulverized coal-fired boiler efficiently supplies air to a central part of a furnace and the neighborhood of a furnace wall, thereby promoting mixture with combustion gas, and reducing both NOx and CO. | 09-09-2010 |
20120137938 | PULVERIZED COAL BOILER - A pulverized coal boiler of the present invention is structured so as to form, among upper and lower after-air nozzles, an opening serving as an outlet of the lower after-air nozzle positioned on the upstream side is formed in a rectangular shape, a cylindrical section for defining a minimum flow path area of combustion air flowing through a flow path of the after-air nozzle is installed inside of the lower after-air nozzles along the flow path of the lower after-air nozzle, and a swirl blade for giving a swirl force to the combustion air flowing through the flow path of the after-air nozzles is installed inside of the cylindrical section, and the flow path of the lower after-air nozzles is formed so that a flow path area of the flow path of the after-air nozzles through which the combustion air flows from a position where the cylindrical section is installed toward the opening of each of the lower after-air nozzles is expanded. | 06-07-2012 |
20130255547 | PULVERIZED COAL-FIRED BOILER AND PULVERIZED COAL BURNING METHOD - A pulverized coal-fired boiler efficiently supplies air to a central part of a furnace and the neighborhood of a furnace wall, thereby promoting mixture with combustion gas, and reducing both NOx and CO. The main after air ports are structured so as to jet air having a large momentum for enabling arrival at the central part of the furnace, and the sub-after air ports are structured so as to jet air having a small momentum to the neighborhood of the wall face of the furnace, and a sectional center of each of the sub-after air ports is within a range from 1 to 5 times of a caliber of the main after air ports from a sectional center of each of the main after air ports. | 10-03-2013 |
20130319301 | Spray Nozzle, and Combustion Device Having Spray Nozzle - A spray nozzle is provided with upper and lower channels and from respective surfaces, the two channels form a cross shape, and become a fuel spray hole by communication of an intersecting part. A guide member is provided, in contact with the upstream-side channel, in a position overlapped with the intersecting part with respect to the spray direction of the spray nozzle. Spray fluid is branched with the guide member from the fuel fluid duct connected to the spray nozzle, passes through the upstream-side channel, to the intersecting part, and is sprayed. The spray fluid forms opposed flows toward the intersecting part in the upstream-side channel to collide with each other at an obtuse angle of 90° or greater, then is sprayed from the intersecting part, to form a thin fan-shaped liquid film. The liquid film is divided by a shearing force from the peripheral gas, atomized into spray particles. | 12-05-2013 |
Patent application number | Description | Published |
20090081000 | Bookbinding Unit - Bookbinding unit enabling, in encasing inner-leaf sheets in coversheets to form booklets, secure book-forming binding regardless of whether the inner-leaf sheets constitute a simple-sheet bundle or are made up of a plurality of folded-over signature sheets. Constituent components are: inner-leaf sheet tray; coversheet tray; bookbinding process path for guiding sheets from the inner-leaf sheet tray to successive adhesive-application and cover-binding locations; inner-leaf conveyor; coversheet conveyor for conveying coversheets to the cover-binding location; bundle-spine adhesive applicator in the adhesive-application location; and cover binder in the cover-binding location. Components' controller is configured to receive input as to whether inner-sheet-bundle makeup includes saddle-stitch sheets or is of simple sheets only, and, based on the bundle makeup information, varies its control of at least one of the coversheet conveyor, adhesive applicator, and cover binder. | 03-26-2009 |
20090148215 | Finisher, Bookbinder, and Imaging System - Single perforating unit is enabled to perforate for file binders and to cut milling grooves, while with a simple structure file-binder storage and booklet-binding can be carried out reliably. Configurations include: a convey-in path for sequentially transferring sheets; a stacker for collating into bundles sheets from the convey-in path; and an adhesive-layer applicator for adding an adhesive layer to the spine-closure edge of sheet bundles from the stacker. A perforating unit is provided in along the convey-in path, and a control unit for controlling position and/or number of perforations made by the perforating unit is provided with (1) a first operation mode in which it effects the punching of a predetermined number of holes in the edge of sheets, and (2) a second operation mode in which it effects the formation of a predetermined number of crenulated grooves in the edge of sheets. | 06-11-2009 |
Patent application number | Description | Published |
20090125705 | DATA PROCESSING METHOD AND APPARATUS WITH RESPECT TO SCALABILITY OF PARALLEL COMPUTER SYSTEMS - A data processing method for scalability of a parallel computer system includes: obtaining a processing time τ(p) that is the longest processing time in a case where a parallel processing is carried out by p processors and a processing time γ | 05-14-2009 |
20090287753 | PARALLEL EFFICIENCY CALCULATION METHOD AND APPARATUS - This invention is to provide a parallel efficiency calculation method, which can be applied, even in a case where a load balance is not kept, to many parallel processings including a heterogeneous computer system environment, and quantitatively correlates a parallel efficiency with a load balance contribution ratio and a virtual parallelization ratio, as parallel performance evaluation indexes, and parallel performance impediment factor contribution ratios. A parallel efficiency E | 11-19-2009 |
20090288088 | PARALLEL EFFICIENCY CALCULATION METHOD AND APPARATUS - This invention is to provide a parallel efficiency calculation method, which can be applied, even in a case where a load balance is not kept, to many parallel processings including a heterogeneous computer system environment, and quantitatively correlates a parallel efficiency with a load balance contribution ratio and a virtual parallelization ratio, as parallel performance evaluation indexes, and parallel performance impediment factor contribution ratios. A parallel efficiency E | 11-19-2009 |
Patent application number | Description | Published |
20110098089 | MOBILE TERMINAL DEVICE - A mobile terminal device of the invention is a mobile terminal device capable of placing and receiving calls by first identification information, and of placing and receiving calls by second identification information, and is characterized by having a mode changing section that changes a mode among a first mode, a second mode and a common mode, and an outgoing call control section which places a call by the first identification information in the first mode, places a call by the second identification information in the second mode, and places a call by either the first identification information or the second identification information in the common mode. | 04-28-2011 |
20120276950 | MOBILE TERMINAL DEVICE - A mobile terminal device of the invention is a mobile terminal device capable of placing and receiving calls by first identification information, and of placing and receiving calls by second identification information, and is characterized by having a mode changing section that changes a mode among a first mode, a second mode and a common mode, and an outgoing call control section which places a call by the first identification information in the first mode, places a call by the second identification information in the second mode, and places a call by either the first identification information or the second identification information in the common mode. | 11-01-2012 |
Patent application number | Description | Published |
20100216296 | Processing Method and Recording Medium - [Object] To provide a processing method capable of removing an oxide film adhering on a Si layer from the Si layer without adversely affecting parts other than the oxide film and capable of surely forming a SiGe layer with good film quality without roughening the crystal structure of a surface of the Si layer from which the oxide film has been removed, and to provide a recording medium. | 08-26-2010 |
20130333726 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, FLUID SUPPLYING METHOD AND STORAGE MEDIUM - The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path. | 12-19-2013 |
20140145390 | HIGH-PRESSURE CONTAINER, SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING HIGH-PRESSURE CONTAINER - In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side. | 05-29-2014 |
20140261570 | SUBSTRATE LIQUID PROCESSING METHOD, SUBSTRATE LIQUID PROCESSING APPARATUS, AND STORAGE MEDIUM - Disclosed is a substrate liquid processing method. The substrate liquid processing method includes: forming a liquid film of a processing liquid having a diameter smaller than that of the substrate on a surface of a substrate by providing the processing liquid to a central portion of the surface of the substrate from a first nozzle while rotating the substrate around a vertical axis in a horizontal posture; supplying, from a second nozzle, a processing liquid, which is the same as the processing liquid supplied from the first nozzle, to a peripheral edge of the liquid film of the processing liquid formed on the surface by the first nozzle; and moving a position of supplying the processing liquid from the second nozzle to the surface of the substrate toward a peripheral edge of the substrate and as a result, expanding the liquid film of the processing liquid toward the peripheral edge of the substrate. | 09-18-2014 |
20150258465 | SEPARATION AND REGENERATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a separation and regeneration apparatus including: a supercritical processing unit configured to generate a mixed gas including a first fluorine-containing organic solvent having a first boiling point and a second fluorine-containing organic solvent having a second boiling point lower than the first boiling point; and a distillation tank configured to store hot water having a temperature between the first boiling point and the second boiling point, in which the mixed gas is input into the hot water to be separated into the first fluorine-containing organic solvent in a liquid state and the second fluorine-containing organic solvent in a gas state, in which an introduction line configured to guide the mixed gas from the supercritical processing unit to the distillation tank is provided and a distal end of the introduction line is disposed in the hot water. | 09-17-2015 |
20150258466 | SEPARATION AND REGENERATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a separation and regeneration apparatus including: a mixed drainage liquid tank (mixed liquid generating unit) configured to generate a mixed liquid which includes a low-specific-gravity liquid insoluble in a fluorine-containing organic solvent, a first fluorine-containing organic solvent having a first boiling point, and a second fluorine-containing organic solvent having a second boiling point higher than the first boiling point; a distillation tank configured to separate the first fluorine-containing organic solvent and the second fluorine-containing organic solvent in the mixed liquid into the first fluorine-containing organic solvent in a gas state and the second fluorine-containing organic solvent in a liquid state; a first tank configured to liquefy and store the first fluorine-containing organic solvent from the distillation tank; and a second tank configured to store the second fluorine-containing organic solvent from the distillation tank. | 09-17-2015 |
20150258584 | SEPARATION AND REGENERATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a separation and regeneration apparatus which includes a buffer tank configured to generate a mixed liquid which includes a first fluorine-containing organic solvent having a first boiling point, and a second fluorine-containing organic solvent having a second boiling point higher than the first boiling point; a distillation tank configured to heat the mixed liquid up to a temperature between the first boiling point and the second boiling point so as to separate the mixed liquid into the first fluorine-containing organic solvent in a gas state and the second fluorine-containing organic solvent in a liquid state; a first tank configured to liquefy and store the first fluorine-containing organic solvent in the gas state which is sent from the distillation tank; and a second tank configured to store the second fluorine-containing organic solvent in the liquid state which is sent from the distillation tank. | 09-17-2015 |
20150318183 | SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD - Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port. | 11-05-2015 |
Patent application number | Description | Published |
20080210278 | Substrate processing apparatus - A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers | 09-04-2008 |
20110155193 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND COMPUTER READABLE RECORDING MEDIUM - After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point. | 06-30-2011 |
20110312247 | Apparatus for Polishing Rear Surface of Substrate, System for Polishing Rear Surface of Substrate, Method for Polishing Rear Surface of Substrate and Recording Medium Having Program for Polishing Rear Surface of Substrate - Provided are a rear substrate surface polishing device polishing a rear surface of a substrate, a rear substrate surface polishing system including the rear substrate surface polishing device, a rear substrate surface polishing method used in the rear substrate surface polishing device, and a storage medium for storing a program implemented with the rear substrate surface polishing method. In particular, the rear surface of the substrate is polished by a substrate polishing unit in accordance with information acquired from a prior process performed prior to the polishing process of the rear surface of the substrate at the substrate polishing unit. Further, the substrate polishing unit polishes the substrate with a polishing area determined on the basis of information acquired from a prior process. Furthermore, the polishing is performed by using any one or all of a plurality of substrate polishing units determined on the basis of information acquired from a prior process. | 12-22-2011 |
20120247516 | SUPERCRITICAL DRYING METHOD AND APPARATUS FOR SEMICONDUCTOR SUBSTRATES - According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing. | 10-04-2012 |
20120264308 | ETCHING METHOD, ETCHING APPARATUS AND STORAGE MEDIUM - Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film. | 10-18-2012 |
20120304485 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM - A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container. | 12-06-2012 |
20130019905 | SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS - According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. | 01-24-2013 |
20140020721 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM - A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state. | 01-23-2014 |
20140250714 | SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS - According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. | 09-11-2014 |
Patent application number | Description | Published |
20120164840 | Substrate Processing Method and Substrate Processing Apparatus - A substrate processing method includes a liquid processing process that supplies a processing liquid onto a substrate to process the substrate; a heating process that heats the substrate on which a liquid film of the processing liquid is formed; a supplying process that supplies a volatile processing liquid to the substrate on which the liquid film of the processing liquid is formed; a stopping process that stops the supply of the volatile processing liquid to the substrate; and a drying process that dries the substrate by removing the volatile processing liquid, in which the heating process starts before the supplying process that supplies the volatile processing liquid and the substrate is heated so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid. | 06-28-2012 |
20140041685 | SUBSTRATE CLEANING APPARATUS, SUBSTRATE CLEANING SYSTEM, SUBSTRATE CLEANING METHOD AND MEMORY MEDIUM - An apparatus for cleaning a substrate includes a cleaning chamber which accommodates a substrate inside the cleaning chamber, a treatment solution supply device which supplies a treatment solution having a volatile component and capable of solidifying or being cured to form a treatment film through vaporization of the volatile component, and a removal solution supply device which supplies a removal solution capable of removing the treatment film formed on a surface of the substrate. The treatment solution supply device supplies the treatment solution on the surface of the substrate set inside the cleaning chamber, and the removal solution supply device supplies the removal solution onto the treatment film formed on the surface of the substrate. | 02-13-2014 |
20140144464 | SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING SYSTEM - A method for cleaning a substrate includes supplying a treatment solution which includes a volatile component onto the front surface of a substrate, solidifying or curing the treatment solution through vaporization of the volatile component of the treatment solution such that a treatment film is formed on the entire portion of the front surface of the substrate, treating a different surface of the substrate while the entire portion of the front surface of the substrate is covered with the treatment film, and supplying to the substrate a removal solution which removes the treatment film in the amount sufficient such that the treatment film covering the entire portion of the front surface of the substrate is removed substantially in entirety after the treating of the different surface of the substrate is finished. | 05-29-2014 |
20140144465 | SUBSTRATE CLEANING SYSTEM, SUBSTRATE CLEANING METHOD AND MEMORY MEDIUM - A substrate cleaning system has a first processing apparatus including a first holding device for holding a substrate, and a treatment solution supply device for supplying onto the entire portion of the front surface of the substrate a treatment solution which includes a volatile component and solidifies or is cured to form a treatment film, and a second processing apparatus including a second holding device for holding the substrate, and a removal-solution supply device for supplying onto the substrate a removal solution which removes the treatment film formed on the front surface of the substrate after the treatment solution supplied by the treatment solution supply device solidifies or is cured. | 05-29-2014 |
20150064910 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM AND MEMORY MEDIUM - A substrate processing method includes supplying onto a substrate a processing liquid which contains a volatile component and forms a film, vaporizing the volatile component in the processing liquid such that the processing liquid solidifies or cures on the substrate and forms a film on the substrate, and supplying onto the film formed on the substrate a removing liquid which removes the processing liquid. The processing liquid is supplied onto the substrate after dry etching or ashing is applied to the substrate. | 03-05-2015 |
20150064911 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM - Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component. | 03-05-2015 |
20150128994 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM, AND MEMORY MEDIUM - A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid. | 05-14-2015 |
20150128995 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM, AND MEMORY MEDIUM - A method for cleaning a substrate, includes supplying to a substrate having a hydrophilic surface a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the hydrophilic surface of the substrate, and supplying to the substrate having the processing film a strip-processing liquid for stripping the processing film from the substrate. | 05-14-2015 |
Patent application number | Description | Published |
20100038429 | MEDIUM PROCESSING DEVICE AND METHOD OF CONTROLLING THE SAME - A card reader has a contact mechanism (IC contact block) coming into contact with a terminal (IC terminal pattern) of an integrated circuit mounted on a card, detection means (detection switch) for detecting that the card is inserted to a contact position at which the terminal and the contact mechanism are in contact with each other, locking means (locking lever etc.) for fixing the card to the contact position, and control means (CPU etc.) for controlling execution and release of locking by the locking means. As soon as the detection means detects insertion of the card, the control means executes locking effected by the locking means and after that, when the card is not activated in response to activation processing by the integrated circuit, release the locking of the locking means. | 02-18-2010 |
20120234916 | CARD MEDIUM PROCESSING DEVICE AND CONTROL METHOD THEREOF - A card medium processing device is controlled by means of the control method including: a first judgment step for judging whether or not a card medium having been inserted is detected by a first detection means for detecting the card medium having been inserted; a second judgment step for judging whether or not the card medium having been inserted is detected by a second detection means for detecting the card medium having been inserted, the second detection means being placed at a position behind the first detection means further away toward a rear side in an inserting direction for the card medium; and a processing step for carrying out a predetermined process, supposing that the first detection means has an error, under a situation where the first judgment step does not detect the card medium having been inserted while the second judgment step detects the card medium having been inserted. | 09-20-2012 |
20140223036 | PERIPHERAL, METHOD OF CONTROLLING PERIPHERAL, AND FIRMWARE DOWNLOADING SYSTEM - A peripheral may be connected to a higher-level device. Firmware program data may be downloaded from the higher-level device to the peripheral. The peripheral may include a rewrite control unit for controlling rewriting the program data stored in the peripheral. The program data stored in the peripheral may be rewritten by use of the program data sent from the higher-level device, and then a response, notifying that data rewriting has normally been completed, may be returned to the higher-level device, if the download file includes rewriting permit data. A response, notifying that data rewriting has normally been completed, may be returned to the higher-level device, without rewriting the program data stored in the peripheral by use of the program data sent from the higher-level device, if the download file does not include rewriting permit data. | 08-07-2014 |
Patent application number | Description | Published |
20140061889 | INTERFACIAL ALLOY LAYER FOR IMPROVING ELECTROMIGRATION (EM) RESISTANCE IN SOLDER JOINTS | 03-06-2014 |
20160056129 | SEMICONDUCTOR STRUCTURE INCLUDING A THROUGH ELECTRODE, AND METHOD FOR FORMING THE SAME - A semiconductor structure including a through electrode includes a lamination body including at least three layers, including respective vertically aligned electrode parts, the electrode part on the surface of an uppermost layer and including an aperture, the electrode part of the intermediate layer having an aperture smaller than the aperture of the uppermost layer; a through-hole extending from the aperture of the electrode part on the uppermost layer to the surface of the electrode part on a lowermost layer, the through-hole having a depressed part on a side wall thereof between the electrode parts therein; an insulating layer disposed on the entire side wall in the through-hole at a part other than on surfaces of the electrode parts; and a conductive material filling the through-hole from the surface of the electrode part on the lowermost layer to the surface of the electrode part on the uppermost layer. | 02-25-2016 |
20160099175 | SEMICONDUCTOR STRUCTURE INCLUDING A THROUGH ELECTRODE, AND METHOD FOR FORMING THE SAME - A semiconductor structure including a through electrode includes a lamination body including at least three layers, including respective vertically aligned electrode parts, the electrode part on the surface of an uppermost layer and including an aperture, the electrode part of the intermediate layer having an aperture smaller than the aperture of the uppermost layer; a through-hole extending from the aperture of the electrode part on the uppermost layer to the surface of the electrode part on a lowermost layer, the through-hole having a depressed part on a side wall thereof between the electrode parts therein; an insulating layer disposed on the entire side wall in the through-hole at a part other than on surfaces of the electrode parts; and a conductive material filling the through-hole from the surface of the electrode part on the lowermost layer to the surface of the electrode part on the uppermost layer. | 04-07-2016 |
Patent application number | Description | Published |
20150021777 | MOUNTING STRUCTURE AND MOUNTING STRUCTURE MANUFACTURING METHOD - A mounting structure which reduces the mechanical stress added to a low-κ material due to warping caused by the difference in thermal expansion coefficients between a chip and a chip support during mounting. This mounting structure includes: a low-κ layer formed on top a semiconductor substrate; an electrode layer formed on the low-κ layer; a protective layer formed the low-κ layer and the electrode layer and having an opening reaching the electrode layer; a first solder layer filling the opening and formed on the electrode layer inside; a second solder layer formed on the first solder layer and having an elastic modulus smaller than the first solder layer; and a support layer connected to the second solder layer and supporting the semiconductor substrate. The protective layer has a greater elastic modulus and a smaller thermal expansion coefficient than an underfill layer formed between the protective layer and the support layer. | 01-22-2015 |
20150249064 | PREVENTION OF WARPING DURING HANDLING OF CHIP-ON-WAFER - To reduce the risk of reduction in yield due to breakage of a thin wafer or a thin chip having through silicon vias (TSVs) formed therein in a chip bonding process, and to prevent warping during handling of a chip-on-wafer (CoW). Chips are bonded to a wafer having TSVs formed therein and sealed before the wafer is thinned. Subsequently, the CoW is subjected to a process of thinning the TSV wafer, a back-surface treatment, and a process of cutting the wafer into small pieces by dicing. Although thin wafers and thin chips having TSVs formed therein are difficult to handle since the chips are bonded to the wafer before thinning and the wafer is thinned and cut into small pieces while mechanical strength thereof is increased by fixing a support to the wafer, the yield of three-dimensional stacked devices can be increased. | 09-03-2015 |
20150279790 | PREVENTION OF WARPING DURING HANDLING OF CHIP-ON-WAFER - To reduce the risk of reduction in yield due to breakage of a thin wafer or a thin chip having through silicon vias (TSVs) formed therein in a chip bonding process, and to prevent warping during handling of a chip-on-wafer (CoW). Chips are bonded to a wafer having TSVs formed therein and sealed before the wafer is thinned. Subsequently, the CoW is subjected to a process of thinning the TSV wafer, a back-surface treatment, and a process of cutting the wafer into small pieces by dicing. Although thin wafers and thin chips having TSVs formed therein are difficult to handle since the chips are bonded to the wafer before thinning and the wafer is thinned and cut into small pieces while mechanical strength thereof is increased by fixing a support to the wafer, the yield of three-dimensional stacked devices can be increased. | 10-01-2015 |
20150279812 | PREVENTION OF WARPING DURING HANDLING OF CHIP-ON-WAFER - To reduce the risk of reduction in yield due to breakage of a thin wafer or a thin chip having through silicon vias (TSVs) formed therein in a chip bonding process, and to prevent warping during handling of a chip-on-wafer (CoW). Chips are bonded to a wafer having TSVs formed therein and sealed before the wafer is thinned. Subsequently, the CoW is subjected to a process of thinning the TSV wafer, a back-surface treatment, and a process of cutting the wafer into small pieces by dicing. Although thin wafers and thin chips having TSVs formed therein are difficult to handle since the chips are bonded to the wafer before thinning and the wafer is thinned and cut into small pieces while mechanical strength thereof is increased by fixing a support to the wafer, the yield of three-dimensional stacked devices can be increased. | 10-01-2015 |