Patent application number | Description | Published |
20090104782 | SELECTIVE ETCHING OF SILICON NITRIDE - Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H | 04-23-2009 |
20090218324 | DIRECT REAL-TIME MONITORING AND FEEDBACK CONTROL OF RF PLASMA OUTPUT FOR WAFER PROCESSING - A method and apparatus for controlling power output of a capacitatively-coupled plasma are provided. A detector is disposed on the power delivery conduit carrying power to one electrode to detect fluctuations in power output to the electrode. The detector is coupled to a signal generator, which converts the RF input signal to a constant control signal. A controller adjusts power input to the RF generator by comparing the control signal to a reference. | 09-03-2009 |
20100099263 | NF3/H2 REMOTE PLASMA PROCESS WITH HIGH ETCH SELECTIVITY OF PSG/BPSG OVER THERMAL OXIDE AND LOW DENSITY SURFACE DEFECTS - A method and apparatus for selectively etching doped semiconductor oxides faster than undoped oxides. The method comprises applying dissociative energy to a mixture of nitrogen trifluoride and hydrogen gas remotely, flowing the activated gas toward a processing chamber to allow time for charged species to be extinguished, and applying the activated gas to the substrate. Reducing the ratio of hydrogen to nitrogen trifluoride increases etch selectivity. A similar process may be used to smooth surface defects in a silicon surface. | 04-22-2010 |
20100101602 | PLASMA CLEANING APPARATUS AND METHOD - Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. Periodically, a PVD chamber may need to be cleaned to remove material that has built up in undesired locations within the chamber. Additionally, the sputtering target may need to be replaced. By removing the sputtering target and placing a grounded chamber lid in its place, the chamber may be plasma cleaned. The susceptor within the chamber may be electrically biased with an RF current. A stationary magnet assembly may be substantially centered behind the grounded lid to focus the cleaning plasma on the susceptor. Following the plasma cleaning, the magnet and lid may be removed and the sputtering target may be coupled to the chamber to continue processing. | 04-29-2010 |
20110265721 | PROCESS CHAMBER LID DESIGN WITH BUILT-IN PLASMA SOURCE FOR SHORT LIFETIME SPECIES - An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly. | 11-03-2011 |
20140094036 | DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT - Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH | 04-03-2014 |
20140165911 | APPARATUS FOR PROVIDING PLASMA TO A PROCESS CHAMBER - Embodiments of apparatus for providing plasma to a process chamber are provided. In some embodiments, an apparatus may include a first ground plate; an electrode disposed beneath and spaced apart from the first ground plate by a first electrical insulator to define a first gap between the first ground plate and the electrode; a second ground plate disposed beneath and spaced apart from the electrode by a second electrical insulator to define a second gap between the electrode and the second ground plate; a gas inlet to provide a process gas to the first gap; a plurality of through holes disposed through the electrode coupling the first gap to the second gap; and a plurality of first gas outlet holes disposed through the second ground plate to fluidly couple the second gap to an area beneath the second plate. | 06-19-2014 |
20140193979 | DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION - Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to a plasma comprising ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products. | 07-10-2014 |
20140283872 | PLASMA CLEANING APPARATUS AND METHOD - Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. Periodically, a PVD chamber may need to be cleaned to remove material that has built up in undesired locations within the chamber. Additionally, the sputtering target may need to be replaced. By removing the sputtering target and placing a grounded chamber lid in its place, the chamber may be plasma cleaned. The susceptor within the chamber may be electrically biased with an RF current. A stationary magnet assembly may be substantially centered behind the grounded lid to focus the cleaning plasma on the susceptor. Following the plasma cleaning, the magnet and lid may be removed and the sputtering target may be coupled to the chamber to continue processing. | 09-25-2014 |
20140363979 | DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT - Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH | 12-11-2014 |
20150072508 | DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION - Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products. | 03-12-2015 |
Patent application number | Description | Published |
20080219431 | METHOD AND APPARATUS FOR ECHO CANCELLATION - A telephony system equipped with an echo cancellation module is disclosed. A hybrid interface circuit outputs an outbound signal to a wall jack while receiving an inbound signal from the wall jack. The inbound signal may contain a line echo of the outbound signal caused by the impedance mismatches in the hybrid interface circuit. A line echo canceller containing an adaptive filter is used to cancel the line echo in the inbound signal based on the learned line echo path characteristics captured in the training period. During a brief period after the telephony system is activated, the line echo canceller enters into a calibration mode wherein its adaptive filter is trained to learn the line echo path characteristics. During the calibration mode, the line echo canceller generates a calibration signal as the outbound signal and receives the line echo from the hybrid interface circuit to perform learning of the line echo path characteristics. | 09-11-2008 |
20080219433 | FULL DUPLEX HANDS-FREE TELEPHONE SYSTEM - A telephone system comprising an analog telephone and a full-duplex speakerphone adapter is disclosed. The analog telephone comprises an ordinary analog telephone subscriber circuit for transmitting and receiving analog signals and a handset for users. The full-duplex speakerphone adapter is coupled between the analog telephone and a central office, uses a subscriber loop interface circuit through the first telephone line to couple to the ordinary analog telephone subscriber circuit of the analog telephone and uses a telephone hybrid interface circuit through the second telephone line to couple to a wall jack to communicate with the central office. | 09-11-2008 |
20080219434 | METHOD AND APPARATUS FOR VOICE COMMUNICATION - A voice communication device with an integrated framework structure for echo cancellation and noise reduction is disclosed. A microphone receives a local input signal while a speaker is outputting a local output signal. The local input signal and output signal are all decomposed into a plurality of subband signals by filter banks for conducting individual processing of echo cancellation and noise reduction per subband. The subband echo canceller is followed by a DFT unit to split the cancellation result into a plurality of narrow frequency bins whereby the noise reduction is performed. The noise reduction results are recombined by an IDFT unit for residual echo removal in a subband non-linear processor. The final output is obtained from a synthesis filter bank that synthesizes the subband signals after echo cancellation and noise reduction into a full-band signal. | 09-11-2008 |
20080219463 | ACOUSTIC ECHO CANCELLATION SYSTEM - An embodiment of an acoustic echo cancellation system is disclosed. The system comprises an echo cancellation unit, a second filter and a subtraction unit. The echo cancellation unit comprises a first attenuator, a first filter and a first subtractor. The first attenuator has a first down-scaling factor for attenuating a first signal. The first filter generates a first echo signal estimate based on the attenuated first signal. The first subtractor generates a third signal by subtracting the first echo signal estimate from a second signal. The second filter generates a second echo signal estimate based on the first signal. The subtraction unit subtracts the second echo signal estimate from the third signal. | 09-11-2008 |