Patent application number | Description | Published |
20150086853 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - A nonaqueous electrolyte secondary battery of an embodiment includes an exterior member, a cathode including a cathode active material layer housed in the exterior member, an anode including an anode active material layer housed in the exterior member and spatially separated from the cathode by a separator, and a nonaqueous electrolyte filled in the exterior member. The cathode active material layer contains lithium-copper oxide and copper oxide. A peak intensity ratio d(002)/d(010) between a plane index d(010) derived from the lithium-copper oxide and a plane index d(002) derived from the copper oxide is not lower than 0.1 and not higher than 0.5 at an X-ray diffraction peak. | 03-26-2015 |
20150086854 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - A nonaqueous electrolyte secondary battery of an embodiment includes an electrode group including a cathode collector, a cathode having a cathode active material layer formed on the cathode collector, an anode collector, an anode having an anode active material layer formed on the anode collector, and a separator placed between the cathode and the anode, an exterior member housing the electrode group, and a nonaqueous electrolyte filled in the exterior member. In the nonaqueous electrolyte secondary battery, the anode collector is at least one metal selected from among Fe, Ti, Ni, Cr, and Al, or an alloy containing at least one metal selected from among Fe, Ti, Ni, Cr, and Al. In the nonaqueous electrolyte secondary battery, a coating containing at least one metal selected from Au and Cu is formed on at least one of the surfaces of the anode collector excluding the anode active material layer. | 03-26-2015 |
20150086862 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - A nonaqueous electrolyte secondary battery of an embodiment includes a positive electrode, a negative electrode, and a nonaqueous electrolyte. The electrolyte contains an organic solvent with a lithium salt dissolved therein and an additive. An active material of the negative electrode contains at least one metal selected from Si and Sn, at least one or more selected from an oxide of the metal and an alloy containing the metal, and a carbonaceous matter. A fluorine concentration of a film A formed on the metal, the oxide of the metal, or the alloy containing the metal in the negative electrode active material is higher than a fluorine concentration of a film B formed on the carbonaceous matter, the additive includes at least one compound containing fluorine and at least one compound containing no fluorine, or an electrolyte after initial charge contains at least one fluorine-containing additive. | 03-26-2015 |
Patent application number | Description | Published |
20090186425 | METHOD FOR FORMING BUMPS, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR MANUFACTURING APPARATUS - A semiconductor substrate ( | 07-23-2009 |
20100024963 | MULTILEVEL INTERCONNECTION BOARD AND METHOD OF FABRICATING THE SAME - A stack of 50 layers of a first pitch-base carbon fiber sheet is formed, two sets of stack each having two second pitch-base carbon fiber sheets stacked therein are fabricated. At this time, the second carbon fiber sheets have a thermal expansion coefficient larger than that of the first carbon fiber sheet. Next, the stack of the first carbon fiber sheet is then held between two sets of stack of the second carbon fiber sheets. The stack of the first and second carbon fiber sheets are then impregnated with an epoxy-base resin composition and the resin is solidified. As a result a prepreg composed of the first and second carbon fiber sheets and the resin component composed of the epoxy-base resin composition is obtained. Thereafter, interconnections and the like are then formed on the prepreg, to thereby complete a multilevel interconnection board. | 02-04-2010 |
20120199991 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, AND POWER SUPPLY - A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer. | 08-09-2012 |
20120211762 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRONIC CIRCUIT - A semiconductor device includes: a semiconductor chip having an electrode; a lead corresponding to the electrode; a metal line coupling the electrode to the lead; a first resin portion covering a coupling portion between the metal line and the electrode and a coupling portion between the metal line and the lead; and a second resin portion covering the metal line, the first resin portion, and the semiconductor chip. | 08-23-2012 |
20120211764 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a support base material, and a semiconductor element bonded to the support base material with a binder, the binder including: a porous metal material that contacts the support base material and the semiconductor element, and a solder that is filled in at least one part of pores of the porous metal material. | 08-23-2012 |
20120211899 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND POWER SUPPLY UNIT - A method for manufacturing a semiconductor device includes placing a sheet containing a fibrous material having at least one outer surface having a metal on a semiconductor chip-mounting region of a substrate; forming a bonding layer containing a fusible metal on the semiconductor chip-mounting region; placing a semiconductor chip on the semiconductor chip-mounting region; and bonding the semiconductor chip to the semiconductor chip-mounting region with the fusible metal-containing bonding layer by heating. | 08-23-2012 |
20120211901 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND POWER SOURCE DEVICE - A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area. | 08-23-2012 |
20120217626 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, includes: placing a seal layer including a connection conductive film on the surface so that the connection conductive film is in contact with an electrode of a semiconductor element and a lead; electrically coupling the electrode and the lead through the connection conductive film; and sealing the semiconductor element by the seal layer. | 08-30-2012 |
20120217660 | SEMICONDUCTOR APPARATUS, METHOD FOR MANUFACTURING THE SAME AND ELECTRIC DEVICE - A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device. | 08-30-2012 |
20140203444 | SEMICONDUCTOR DEVICE AND POWER SOURCE DEVICE - A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area. | 07-24-2014 |
Patent application number | Description | Published |
20090001478 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate. | 01-01-2009 |
20090061576 | MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE AND ETCHING SOLUTION - After an n-type AlGaN barrier layer ( | 03-05-2009 |
20090140262 | FIELD-EFFECT TRANSISTOR - A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an insulating film formed directly on the gate electrode to cover at least one of the first and second sidewall surfaces, first and second ohmic electrodes formed on the first and second sides, respectively, a passivation film including a first portion extending from the first ohmic electrode toward the gate electrode to cover a surface area between the first ohmic electrode and the gate electrode and a second portion extending from the second ohmic electrode toward the gate electrode to cover a surface area between the second ohmic electrode and the gate electrode, wherein the insulating film is in direct contact with at least the first and second passivation film portions, and has a composition different from that of the passivation film. | 06-04-2009 |
20100052176 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first wiring extending in a first direction and a second wiring extending in a second direction which crosses the first direction and being disposed with a space interposed between the first wiring and the second wiring, and including a tantalum layer, a tantalum nitride layer formed over the tantalum layer, and a metal layer formed over the tantalum nitride layer. | 03-04-2010 |
20100320505 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND AMPLIFIER - A semiconductor device includes a nitride semiconductor layer having a (0001) face and a (000-1) face, formed above a common substrate; a (0001) face forming layer provided partially between the substrate and the nitride semiconductor layer; a source electrode, a drain electrode, and a gate electrode, provided on the nitride semiconductor layer having the (0001) face; and a hole extracting electrode provided on the nitride semiconductor layer having the (000-1) face. | 12-23-2010 |
20110115025 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a compound semiconductor layer provided over a substrate, a plurality of source electrodes and a plurality of drain electrodes provided over the compound semiconductor layer, a plurality of first vias each of which is configured to pass through the compound semiconductor layer and be coupled to a corresponding one of the plurality of source electrodes, a plurality of second vias each of which is configured to pass through the compound semiconductor layer and be coupled to a corresponding one of the plurality of drain electrodes, a common source wiring line configured to be coupled to the plurality of first vias and be buried in the substrate, and a common drain wiring line configured to be coupled to the plurality of second vias and be buried in the substrate. | 05-19-2011 |
20110241074 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate. | 10-06-2011 |
20120074426 | FIELD-EFFECT TRANSISTOR - A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an insulating film formed directly on the gate electrode to cover at least one of the first and second sidewall surfaces, first and second ohmic electrodes formed on the first and second sides, respectively, a passivation film including a first portion extending from the first ohmic electrode toward the gate electrode to cover a surface area between the first ohmic electrode and the gate electrode and a second portion extending from the second ohmic electrode toward the gate electrode to cover a surface area between the second ohmic electrode and the gate electrode, wherein the insulating film is in direct contact with at least the first and second passivation film portions, and has a composition different from that of the passivation film. | 03-29-2012 |
20120218796 | COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, AND POWER SUPPLY - A compound semiconductor device includes: a substrate; a first compound semiconductor layer formed over the substrate; a second compound semiconductor layer formed over the first compound semiconductor layer; and an upper electrode formed over the first compound semiconductor layer, wherein two-dimensional hole gas is generated in a region of the first compound semiconductor layer, the region being located at an interface between the first compound semiconductor layer and the second compound semiconductor layer, so as to have a hole concentration that decreases with increasing distance from the upper electrode. | 08-30-2012 |
Patent application number | Description | Published |
20090105937 | Facility-guidance process, facility-guidance apparatus, and computer-readable medium storing facility-guidance program - In a facility-guidance apparatus realized in a computer by execution of a program for guiding a visitor to an exhibition place in a facility, character information indicating characters of articles exhibited at each of exhibition places is stored in advance in correspondence with place information indicating each exhibition place, for each of a target facility and a substitute facility. In response to an external input, place information for the substitute facility is designated. Then, the character information corresponding to the designated place information for the substitute facility is referred to, a degree of similarity between the character information referred to for the substitute facility and the character information for each exhibition place in the target facility is determined, and information indicating one or more candidates for the exhibition place in the target facility is outputted in the order of the degree of similarity. | 04-23-2009 |
20090204588 | METHOD AND APPARATUS FOR DETERMINING KEY ATTRIBUTE ITEMS - A computer program, method, and apparatus for determining key attribute items and search keywords for use in analysis of incident records. Master tables provide a collection of registered text strings which may appear in incident records. Upon entry of a specified keyword, a master table search processor searches the master tables to extract a master table containing the specified keyword, as well as identifying under which attribute item of the extracted master table the specified keyword is found. The identified attribute item is referred to as a key attribute item. Then out of the extracted master table, a search keyword extractor extracts every text string under the key attribute item for use as search keywords. With those search keywords, an attribute item information generator retrieves incident records and produces attribute item information from the retrieved incident records and the key attribute item. | 08-13-2009 |
20100005311 | Electronic-data authentication method, Elctronic-data authentication program, and electronic-data, authentication system - An electronic-data authentication method is for authenticating electronic data provided by a virtual person anonymously used on a network, performed by a virtual-person management system including a user terminal, a user management device, and a virtual-person management device. The method includes receiving, by the virtual-person management device, the electronic data, a first electronic signature generated by encrypting the electronic data with a first signature-creation key, and an virtual person ID for uniquely identifying the virtual person from the user terminal; authenticating, by the user management device, the first electronic signature received at the receiving by using a first signature-authentication key corresponding to the first signature-creation key; generating, by the virtual-person management device, a second electronic signature by encrypting the electronic data received at the receiving with a second signature-creation key issued for the virtual person; and transmitting, by the virtual-person management device, the second electronic signature to the user terminal. | 01-07-2010 |