Patent application number | Description | Published |
20110318995 | METHOD FOR MANUFACTURING ELECTRONIC GRADE SYNTHETIC QUARTZ GLASS SUBSTRATE - An electronic grade synthetic quartz glass substrate is manufactured by machining a synthetic quartz glass substrate to form a recess, channel or step and polishing the bottom and side surfaces of the recess, channel or step to mirror finish by a working portion of a rotary polishing tool while keeping the working portion in contact with the bottom and side surfaces under independent constant pressures. | 12-29-2011 |
20110318996 | METHOD FOR MANUFACTURING ELECTRONIC GRADE SYNTHETIC QUARTZ GLASS SUBSTRATE - An electronic grade synthetic quartz glass substrate having a recess, channel or step is manufactured by machining at least one surface of a synthetic quartz glass substrate having a maximum birefringence of up to 3 nm/cm in its entirety to form a recess, channel or step, and removing the residual stress due to machining. | 12-29-2011 |
20130101790 | ELECTRONIC GRADE GLASS SUBSTRATE AND MAKING METHOD - An electronic grade glass substrate is provided with a recess, channel or step in one surface, and a first chamfer between the side surface of the recess, channel or step and the one surface. The side and bottom surfaces of the recess, channel or step are mirror finished, and the first chamfer is mirror finished. | 04-25-2013 |
20140120198 | RECTANGULAR MOLD-FORMING SUBSTRATE - A rectangular substrate is used as a mold after it is provided with a topological pattern. The substrate has A-side and B-side opposed surfaces, the A-side surface being provided with the topological pattern. The A-side surface includes a central rectangular region of 1 to 50 mm by 1 to 50 mm having a flatness of up to 350 nm. Use of the mold-forming substrate prevents the occurrence of a pattern misalignment or pattern error between the step of forming a pattern on a mold-forming substrate and the transfer step. Transfer of a fine size and complex pattern is possible. | 05-01-2014 |
20160052193 | RECTANGULAR SUBSTRATE FOR IMPRINT LITHOGRAPHY AND MAKING METHOD - A rectangular substrate is prepared by providing a starting rectangular substrate having front and back surfaces and four side surfaces as ground, and pressing a rotary polishing pad perpendicularly against one side surface under a constant pressure, and relatively moving the rotary polishing pad and the substrate parallel to the side surface, for thereby polishing the side surface of the substrate. In the imprint lithography, the rectangular substrate is capable of controlling compression and pattern shape at a high accuracy and thus transferring a complex pattern of fine feature size to a recipient. | 02-25-2016 |
20160067843 | ELECTRONIC GRADE GLASS SUBSTRATE AND MAKING METHOD - An electronic grade glass substrate is provided with a recess, channel or step in one surface, and a first chamfer between the side surface of the recess, channel or step and the one surface. The side and bottom surfaces of the recess, channel or step are mirror finished, and the first chamfer is mirror finished. | 03-10-2016 |
Patent application number | Description | Published |
20100028693 | RESIN LAMINATE, METHOD FOR PRODUCTION THEREOF, AND TRANSFER FILM FOR USE IN THE PRODUCTION OF RESIN LAMINATE - Disclosed is a resin laminate having a surface layer excellent in antistatic properties, scratch resistance, and transparency. Also disclosed is a method for producing the resin laminate with a high productivity. Further disclosed is a transfer film for use in the production of the resin laminate. The resin laminate comprises a resin shaped article, an antistatic layer containing a π-electron conjugated conductive polymer and at least one resin selected from a polyester resin, a polyurethane resin, a polyesterurethane resin, an acrylic resin, and a melamine resin on at least one surface of the shaped article, and a cured coating film layer obtained by curing a curable resin on the antistatic layer. The method for producing the resin laminate preferably comprises the steps of forming the cured coating film layer and the antistatic layer on a mold using a transfer film, carrying out cast polymerization of a raw material for a resin, and detaching the resin laminate from the mold after the polymerization is completed. | 02-04-2010 |
20110230623 | METHOD FOR CONTINUOUSLY PRODUCING ACRYLIC RESIN SHEET TECHNICAL FIELD - Disclosed is a method for continuously producing an acrylic resin sheet containing 50% by mass or more of methyl methacrylate units, which comprises irradiating an active energy ray-polymerizable viscous liquid | 09-22-2011 |
20120156510 | ANTI-SOILING COMPOSITION, ANTI-SOILING FILM, ANTI-SOILING LAMINATED FILM, TRANSFER FILM AND RESIN LAMINATE, AND METHOD FOR MANUFACTURING RESIN LAMINATE - An anti-soiling composition including: compound (A) having a perfluoropolyether group and an active energy ray-reactive group; and inorganic fine particles (B), wherein compound (A) is contained in an amount of 20 parts by mass or more and 75 parts by mass or less in 100 parts by mass of a solid content of the composition. | 06-21-2012 |
20120267042 | TRANSFER FILM, RESIN LAMINATE, METHOD FOR PRODUCING TRANSFER FILM, AND METHOD FOR PRODUCING RESIN LAMINATE - An object of the present invention is to provide a transfer film in which the function layer such as an anti-reflective layer can be laminated using a film having high surface tension, and a laminate including a soil resistant layer formed by a wet method and having high water repellency and oil repellency and high transparency, scratch resistance, and sweat resistance can be provided, and a method for producing the transfer film. A transfer film according to the present invention is a transfer film including a transparent base material film and a soil resistant cured film laminated on the surface of the transparent base material film, wherein a water contact angle ( | 10-25-2012 |
20130258479 | TRANSFER FILM AND METHOD FOR PRODUCING SAME, AND LAMINATE AND METHOD FOR PRODUCING SAME - Provided is a transfer film wherein: a low-refractive-index film having a refractive index (Nx) and a high-refractive-index film having a refractive index (Ny) are laminated in this order on one surface of a peeling film; the refractive indices satisfy Nx10-03-2013 | |
20130295331 | FILM CONTAINING METAL OXIDE PARTICLES, TRANSFER FILM AND METHOD FOR PRODUCING SAME, AND LAMINATE AND METHOD FOR PRODUCING SAME - Provided is a transfer film that includes, as a medium-refractive-index film, a film containing metal oxide particles that has a central region in which there are no metal oxide particles, a surface-layer region (a | 11-07-2013 |
Patent application number | Description | Published |
20100045573 | PLASMA DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention improves discharge characteristics of a protective layer in order to provide a PDP that exhibits excellent display performance even if the PDP is of a fine-cell structure. The present invention also provides a manufacturing method for the PDP. In particular, a protective layer | 02-25-2010 |
20100096986 | PLASMA DISPLAY PANEL AND METHOD FOR MANUFACTURE OF THE SAME - The present invention improves discharge characteristics of a protective layer in order to provide a PDP that exhibits excellent display performance even if the PDP is of a fine-cell structure. The present invention also provides a manufacturing method for the PDP. In particular, a protective layer | 04-22-2010 |
20100181909 | PLASMA DISPLAY PANEL - A plasma display panel demonstrating excellent image display performance by suppressing generation of initialization bright points through modification of the phosphor layer, and by eliminating variation in discharge characteristics between the discharge cells of each color. In addition to solving these problems, the luminance of the plasma display panel is also enhanced by using the ultraviolet rays emitted in the discharge space in order to promote the production of visible light on the front panel side. Specifically, the phosphor layer ( | 07-22-2010 |
20110148744 | PLASMA DISPLAY PANEL - A first aim of the present invention is to provide a PDP capable of stably delivering favorable image display performance and being driven with low power, by improving the surface layer to improve secondary electron emission characteristics and charge retention characteristics. A second aim of the present invention is to provide a PDP capable of displaying high-definition images even when the PDP is driven at high speed by preventing the discharge delay during driving. In order to achieve these aims, the surface layer (protective film) | 06-23-2011 |
20110298363 | PLASMA DISPLAY PANEL - A first aim of the present invention is to provide a PDP capable of stably delivering favorable image display performance and being driven with low power, by improving the surface layer to improve secondary electron emission characteristics and charge retention characteristics. A second aim of the present invention is to provide a PDP, in addition to having the above-mentioned effects, capable of reducing an aging time. In order to achieve these aims, a crystalline film of a film thickness of approximately 1 μm is disposed as a surface layer (protective film) | 12-08-2011 |
20130015762 | PLASMA DISPLAY PANELAANM Fukui; YusukeAACI OsakaAACO JPAAGP Fukui; Yusuke Osaka JPAANM Nishitani; MikihikoAACI NaraAACO JPAAGP Nishitani; Mikihiko Nara JPAANM Sakai; MasahiroAACI KyotoAACO JPAAGP Sakai; Masahiro Kyoto JPAANM Okafuji; MichikoAACI OsakaAACO JPAAGP Okafuji; Michiko Osaka JPAANM Okui; YayoiAACI OsakaAACO JPAAGP Okui; Yayoi Osaka JPAANM Honda; YosukeAACI NaraAACO JPAAGP Honda; Yosuke Nara JPAANM Yamauchi; YasuhiroAACI OsakaAACO JPAAGP Yamauchi; Yasuhiro Osaka JPAANM Inoue; OsamuAACI OsakaAACO JPAAGP Inoue; Osamu Osaka JPAANM Asano; HiroshiAACI OsakaAACO JPAAGP Asano; Hiroshi Osaka JP - There is provided a PDP in which the structure of the periphery of a protective film is improved, excellent secondary electron emission property is exhibited, and improved efficiency and increased life can be expected. There is further provided a PDP in which occurrence of a discharge delay at the time of driving is prevented, and exhibition of high quality image display performance can be expected even in a high definition PDP that is driven at a high speed. Specifically, a crystalline film containing Sr in CeO | 01-17-2013 |
Patent application number | Description | Published |
20130019997 | CU-CO-SI ALLOY MATERIAL - A copper alloy material suitable for materials for electronic and electrical equipments such as movable connectors having excellent bending workability and being able to show high electrical conductivity was achieved by a Cu—Co—Si alloy material containing 1.5 to 2.5 wt % of Co and 0.3 to 0.7 wt % of Si, having a Co/Si element ratio of 3.5 to 5.0, containing 3,000 to 150,000 second phase particles per mm | 01-24-2013 |
20130180630 | Cu-Co-Si-BASED ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURING THE SAME - A Cu—Co—Si-based alloy that has even mechanical properties and that is provided with favorable mechanical and electrical properties as a copper alloy for an electronic material is provided. The copper alloy for an electronic material comprises 0.5% by mass to 3.0% by mass of Co, 0.1% by mass to 1.0% by mass of Si, and the balance Cu with inevitable impurities. An average grain size is in the range of 3 μm to 15 μm and an average difference between a maximum grain size and a minimum grain size in every observation field of 0.05 mm | 07-18-2013 |
20130209825 | COPPER-COBALT-SILICON ALLOY FOR ELECTRODE MATERIAL - Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5≦Co/Si≦5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm. | 08-15-2013 |
20140014240 | Cu-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR PRODUCING THE SAME - A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder. | 01-16-2014 |
20140014241 | STRIP OF Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND THE METHOD FOR PRODUCING THE SAME - Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied.
| 01-16-2014 |