Ohbo

Hiroki Ohbo, Osaka JP

Patent application number	Description	Published
20080248603	Nitride-based semiconductor element and method of preparing nitride-based semiconductor - A method of preparing a nitride semiconductor capable of forming a nitride-based semiconductor layer having a small number of dislocations as well as a small number of crystal defects resulting from desorption with excellent crystallinity on the upper surface of a substrate through a small number of growth steps is proposed. The method of preparing a nitride-based semiconductor comprises steps of forming a mask layer on the upper surface of a substrate to partially expose the upper surface of the substrate, forming a buffer layer on the exposed part of the upper surface of the substrate and the upper surface of the mask layer and thereafter growing a nitride-based semiconductor layer. Thus, the outermost growth surface of the nitride-based semiconductor layer laterally grown on the mask layer does not come into contact with the mask layer. Therefore, desorption hardly takes place from the outermost growth surface of the nitride-based semiconductor layer, whereby a nitride-based semiconductor layer having a small number of defects is formed. Further, the mask layer is directly formed on the substrate, whereby the number of growth steps for the nitride-based semiconductor layer is reduced.	10-09-2008
20090046755	INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.	02-19-2009
20090262772	SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.	10-22-2009
20100189146	METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE AND LIGHT APPARATUS - A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.	07-29-2010
20110211609	INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.	09-01-2011
20140209165	SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - Provided is a solar cell with improved photoelectric conversion efficiency. The solar cell includes a photoelectric conversion body and first and second electrodes. The photoelectric conversion body includes a substrate made of semiconductor material. The first and second electrodes are disposed at intervals on one main surface of the photoelectric conversion body. Terraces each formed of a crystal plane are provided on a main surface of the substrate on the one main surface side of the photoelectric conversion body. At least one of the terraces exists between the first electrode and the second electrode.	07-31-2014

Hiroki Ohbo, Hirakata-Shi JP

Patent application number	Description	Published
20090323750	SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS OPTICAL PICKUP - A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.	12-31-2009

Hiroki Ohbo, Hirakata JP

Patent application number	Description	Published
20080310471	SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer, wherein the third semiconductor layer is electrically connected to the first semiconductor layer by bonding a side of the third semiconductor layer to the surface of the first conductive type substrate through a fusible layer.	12-18-2008

Hiroki Ohbo, Moriguchi-Shi JP

Patent application number	Description	Published
20120033701	METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE AND LIGHT APPARATUS - A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.	02-09-2012

Teruhiko Ohbo, Kobe-Shi JP

Patent application number	Description	Published
20130142638	RADIAL FLOW STEAM TURBINE - Provided is a high-efficiency, realistic, radial flow steam turbine such that the steam supply method is simplified, and that a sufficient amount of steam is supplied to the interior of a turbine unit which is additionally provided in the axial direction. The radial flow steam turbine is equipped with a rotation shaft; a rotor disk connected to the rotation shaft; rotor blades are mounted on the rotor disk; stator disks which face the rotor disk are supported by a casing by being fixed thereto; stator blades are mounted on the stator disk; and an operating steam circulation path is formed wherein the rotor blades on the rotor disk and the stator blades on the stator disk are alternately disposed in the radial direction, and wherein the flow direction of operating steam is in a radial direction which is outward with respect to the rotation shaft. Also, the radial flow steam turbine is configured in such a way that the steam supplied by a steam supply source is circulated as operating steam in the operating steam path, and that thereby the rotor disk and the rotation shaft are rotated. In this radial flow steam turbine, openings are provided in those areas of the rotor disk in the vicinity of the rotation shaft, with the result that an axial steam supply passage is secured.	06-06-2013