Patent application number | Description | Published |
20080223237 | IMPRINT DEVICE, STAMPER AND PATTERN TRANSFER METHOD - An imprint device transfers a micropattern created on a stamper onto a material to be transferred, by bringing the stamper and the material to be transferred in contact with each other and separating the stamper from the material to be transferred. The stamper has a recessed part on a portion of an outer circumferential part thereof around a surface with the micropattern. An outer diameter of the stamper is larger than that of the material to be transferred. The outer diameter of the material to be transferred is larger than that of the surface with the micropattern. | 09-18-2008 |
20080229948 | IMPRINT DEVICE AND METHOD OF MANUFACTURING IMPRINTED STRUCTURE - An imprint device transfers a micropattern created on a stamper onto a material to be transferred, by bringing the stamper and the material to be transferred into contact with each other. The imprint device has a flow passage for discharging a fluid to a rear surface of the stamper or the material to be transferred, to thereby bend the stamper or the material to be transferred. | 09-25-2008 |
20120074615 | IMPRINT DEVICE AND MICROSTRUCTURE TRANSFER METHOD - There is provided an imprint device for transferring a fine pattern to a material to form a patterned material. The device comprises a stamper having the fine pattern thereon, and a pressure distribution mechanism. The stamper is pressed against the material, and the pressure distribution mechanism provides a nonuniform pressure distribution in a patterned region of the patterned material, while the stamper is in contact with the material. There are provided an imprint device and a microstructure transfer method, by which it is possible to sufficiently spread a resin or other material for forming a pattern layer between a stamper and a patterned material with a lower pressure so as not to damage the stamper or the patterned material, and to form a pattern formation layer having the uniform thickness on the patterned material. | 03-29-2012 |
Patent application number | Description | Published |
20120097535 | Sputtering Target of Ferromagnetic Material with Low Generation of Particles - A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device. | 04-26-2012 |
20120241317 | Sputtering Target Comprising Oxide Phase Dispersed in Co or Co Alloy Phase, Magnetic Thin Film Made of Co or Co Alloy Phase and Oxide Phase, and Magnetic Recording Medium Using the Said Thin Film - A sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase, wherein the sputtering target is configured from a metal matrix phase containing Co, and a phase containing SiO | 09-27-2012 |
20130098760 | SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCING SAME - Provided is a sputtering target containing SiO | 04-25-2013 |
20130112555 | Sputtering Target of Ferromagnetic Material with Low Generation of Particles - Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device. | 05-09-2013 |
20130168240 | Fe-Pt-Based Ferromagnetic Material Sputtering Target - An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased. | 07-04-2013 |
20130206591 | Sputtering Target for Magnetic Recording Film and Method for Producing Same - Provided is a sputtering target for a magnetic recording film containing SiO | 08-15-2013 |
20130213803 | Fe-Pt-Based Sputtering Target with Dispersed C Grains - A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe | 08-22-2013 |
20130248362 | Sputtering Target for Magnetic Recording Film and Process for Production Thereof - A sputtering target for a magnetic recording film containing SiO | 09-26-2013 |
20130306470 | Sputtering Target for Magnetic Recording Film - A sputtering target for a magnetic recording film which contains carbon, the sputtering target is characterized in that the ratio (I | 11-21-2013 |
20130341184 | Co-Cr-Pt-B-Based Alloy Sputtering Target and Method for Producing Same - Provided is a Co—Cr—Pt—B-based alloy sputtering target having no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm×100 μm area (field of view). Additionally provided is a method for producing this Co—Cr—Pt—B-based alloy sputtering target including the steps of hot forging or hot rolling a Co—Cr—Pt—B-based alloy cast ingot, thereafter performing cold rolling or cold forging thereto at an elongation rate of 4% or less, and machining the ingot to prepare a target having no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm×100 μm area (field of view), or, hot forging or hot rolling the ingot, thereafter quenching the ingot to −196° C. to 100° C., and machining the ingot to prepare a target. The target of the present invention has high magnetic flux density and few microcracks in a B-rich layer, and thus stabilizes discharge and minimizes arcing. | 12-26-2013 |
20140001038 | Ferromagnetic Sputtering Target with Less Particle Generation | 01-02-2014 |
20140231250 | C PARTICLE DISPERSED FE-PT-BASED SPUTTERING TARGET - Provided is a sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, and the remainder being Fe. It is an object of the present invention to provide a high-density sputtering target that can produce a granular magnetic thin film without using any high-cost co-sputtering apparatuses and can also reduce the amount of particles generated during sputtering. | 08-21-2014 |
20140311902 | Magnetic Material Sputtering Target and Manufacturing Method Thereof - Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering. | 10-23-2014 |
20150027882 | Sputtering Target for Magnetic Recording Medium, and Process for Producing Same - A sputtering target for a magnetic recording medium, wherein an average grain area of a B-rich phase is 90 μm | 01-29-2015 |
Patent application number | Description | Published |
20090118304 | 2-HETEROARYL-SUBSTITUTED INDOLE DERIVATIVE - Disclosed is a compound represented by the formula (I) below, which has a glucokinase-activating effect and is thus useful for treatment of diabetes or obesity, or a pharmaceutically acceptable salt thereof. | 05-07-2009 |
20100087360 | Heterocycle-substituted benzimidazole derivative - A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: (I) wherein X | 04-08-2010 |
20110082135 | INHIBITORS OF AKT ACTIVITY - The instant invention provides for substituted [1,2,4]triazolo[4,3-a]-1,5-naphthyridine compounds that inhibit Akt activity. In particular, the compounds disclosed selectively inhibit one or two of the Akt isoforms, preferably Akt1. The invention also provides for compositions comprising such inhibitory compounds and methods of inhibiting Akt activity, especially Akt1 by administering the compound to a patient in need of treatment of cancer. | 04-07-2011 |
20110092511 | INHIBITORS OF AKT ACTIVITY - The instant invention provides for substituted naphthyridine compounds that inhibit Akt activity. In particular, the compounds disclosed selectively inhibit one or two of the Akt isoforms, preferably Akt1. The invention also provides for compositions comprising such inhibitory compounds and methods of inhibiting Akt activity especially Akt1 by administering the compound to a patient in need of treatment of cancer. | 04-21-2011 |
20110288090 | Inhibitors of AKT Activity - The instant invention provides for compounds that inhibit Akt activity. In particular, the compounds disclosed selectively inhibit one or two of the Akt isoforms. The invention also provides for compositions comprising such inhibitory compounds and methods of inhibiting Akt activity by administering the compound to a patient in need of treatment of cancer. | 11-24-2011 |
20130102605 | INHIBITORS OF AKT ACTIVITY - The instant invention provides for substituted thiazoles that inhibit Akt activity. In particular, the compounds disclosed selectively inhibit one or two of the Akt isoforms. The invention also provides for compositions comprising such inhibitory compounds and methods of inhibiting Akt activity by administering the compound to a patient in need of treatment of cancer. | 04-25-2013 |