Patent application number | Description | Published |
20130077354 | Controller for a Switched Mode Power Supply - A controller ( | 03-28-2013 |
20130153968 | Semiconductor Device - A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact. | 06-20-2013 |
20130157414 | STACKED-DIE PACKAGE AND METHOD THEREFOR - Consistent with an example embodiment, there is a semiconductor device comprised of a combination of device die. The semiconductor device comprises a package substrate having groups of pad landings. A first device die is anchored to the package substrate, the first device die having been wire-bonded to a first group of pad landings. At least one subsequent device die is anchored to the first device die. The at least one subsequent device die has an underside profile with recesses defined therein, the recesses of a size are defined to accommodate wires bonded to the first device die; the at least one subsequent device is wire bonded to a second group of pad landings. | 06-20-2013 |
20130181336 | SEMICONDUCTOR PACKAGE WITH IMPROVED THERMAL PROPERTIES - A semiconductor package, comprises an encapsulant which contains a semiconductor substrate, the package lower side being mountable on a surface. The semiconductor substrate backside is in close proximity of the semiconductor package lower side for improved thermal conductivity to the surface. The active side of the semiconductor substrate, facing the upper side of the semiconductor package, has a plurality of die contacts. A plurality of electrically conductive interconnects are connected to the die contacts and extend to the lower side of the semiconductor package for connecting the die contacts to the surface. | 07-18-2013 |
20130187713 | POWER AMPLIFIER CIRCUIT AND CONTROL METHOD - A power amplifier circuit uses an output transistor and a cascode transistor. First and second drive circuits apply gate control signals to the two transistors, which rise and fall in synchronism, and this is such that the voltage drop across the cascode transistor is reduced (compared to a constant gate voltage being applied to the output transistor). | 07-25-2013 |
20130193417 | Integrated Circuit and Manufacturing Method - Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed. | 08-01-2013 |