Patent application number | Description | Published |
20110135843 | Deposited Film Forming Device and Deposited Film Forming Method - In order to form a high-quality Si-based film at high speed, for example, a deposited film forming device according to one aspect of the present invention includes: a chamber; a first electrode arranged in the chamber; and a second electrode arranged in the chamber and spaced a certain distance from the first electrode. The second electrode includes first and second supplying parts. The first supplying part supplies a first material gas and generates hollow cathode discharge. The second supplying part supplies a second material gas higher in decomposition rate than the first material gas. | 06-09-2011 |
20120171849 | APPARATUS FOR FORMING DEPOSITED FILM AND METHOD FOR FORMING DEPOSITED FILM - In order to form a high quality film without causing in-plane nonuniformity in film quality, an apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; a second electrode that is located in the chamber with a predetermined spacing from the first electrode and includes a plurality of supply parts configured to supply material gases; an introduction path connected to the supply parts, through which the material gases are introduced; a heater located in the introduction path; and a cooling mechanism configured to cool the second electrode. | 07-05-2012 |
20120228129 | APPARATUS FOR FORMING DEPOSITED FILM - First and second electrodes are apart from each other in a chamber. Plates are disposed on a substrate in the second electrode. Each of the plates comprises first and second parts for supplying first and second gas to a space between the first and second electrodes, respectively, a first supply path for first gas connected to the first part, and a second supply path for second gas connected to the second part. The substrate comprises a heater for the first gas, a first introducing path for introducing the first gas to the first supply path, and a second introducing path for introducing the second gas to the second supply path. The second supply path comprises a mainstream part without the second part and branch parts with the second part. A connecting portion of the second introducing path and the mainstream part is positioned in an adjacent portion of the plates. | 09-13-2012 |
20120235268 | PHOTOELECTRIC CONVERSION MODULE, METHOD FOR MANUFACTURING SAME, AND POWER GENERATION DEVICE - A photoelectric conversion module comprises: a substrate having a first surface on which a light is incident and a second surface located at the opposite side of the first surface; a photoelectric conversion element provided on the second surface of the substrate; a light-transmitting member provided on the photoelectric conversion element; and a reflecting member provided on the light-transmitting member and configured to reflect a light having transmitted through the light-transmitting member. The reflecting member comprises an inclined light reflection surface that allows a light reflected from the reflecting member to be totally reflected at the first surface of the substrate. | 09-20-2012 |
Patent application number | Description | Published |
20090014839 | Nitride-Based Semiconductor Device - A nitride-based semiconductor device includes: an n-GaN layer | 01-15-2009 |
20090166607 | Nitride Semiconductor Light Emitting Element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 07-02-2009 |
20090272992 | Semiconductor Light-Emitting Device and Process for Producing the Same - A semiconductor light emitting device of the present invention includes a substrate ( | 11-05-2009 |
20100065812 | Nitride semiconductor light emitting element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 03-18-2010 |
20110272665 | Nitride semiconductor device - An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC | 11-10-2011 |
20120119219 | NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE - A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability are provided. On a substrate ( | 05-17-2012 |
Patent application number | Description | Published |
20120014139 | POWER CONVERTING APPARATUS - In a power converting apparatus which converts AC power into DC power, an inverter circuit including at least one series-connected single-phase inverter is connected in a downstream of a stage in which an AC input is rectified in series therewith. In the downstream stage of the inverter circuit, there are provided a smoothing capacitor connected via a rectifier diode and a short-circuiting switch for bypassing the smoothing capacitor. The short-circuiting switch is set to an ON state only in each of short-circuiting phase ranges of which midpoint matches each of zero-crossing phases and an output of the inverter circuit is controlled by using a current command so that a DC voltage of the smoothing capacitor follows a target voltage and an input power factor is improved. | 01-19-2012 |
20130133358 | INVERTER DEVICE AND AIR CONDITIONER INCLUDING THE SAME - An inverter device includes a plurality of switching circuits in which first switching elements including Si semiconductors and second switching element including WBG semiconductors having ON resistance smaller than that of the first switching elements and having switching speed higher than that of the first switching elements are connected in parallel. The inverter device includes a converting circuit that converts a direct-current voltage into a desired alternating-current voltage and a driving unit that generates a plurality of driving signals for respectively turning on and off the switching circuits. The inverter device includes, for each of the switching circuits, a gate circuit that, based on the driving signals, turns on the second switching element later than the first switching element and turns off the first switching element later than the second switching element. | 05-30-2013 |
20130152624 | POWER CONVERTER AND REFRIGERATING AND AIR-CONDITIONING APPARATUS - A power converter includes step-up means for varying a voltage applied by a power supply to a predetermined voltage, commutating means for performing a commutation operation for allowing a current flowing through the step-up means to flow through a second path, smoothing means for smoothing a voltage related to outputs of the step-up means and the commutating means to produce power and supplying the power to a load side, and control means for performing control related to voltage varying, such as stepping up, by the step-up means and controlling the commutation operation of the commutating means on the basis of at least one of a voltage and a current related to the step-up means. | 06-20-2013 |
Patent application number | Description | Published |
20130040414 | METHOD FOR MANUFACTURING A THIN-FILM SOLAR CELL - Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material. | 02-14-2013 |
20130240028 | METHOD OF MANUFACTURING SOLAR CELL ELEMENT AND SOLAR CELL ELEMENT - A semiconductor substrate is prepared. A glass layer containing one conductivity type dopant is formed on one main surface of the semiconductor substrate. One conductivity type semiconductor region including a first concentration region having a first concentration as a dopant concentration, and a second concentration region having a second concentration as a dopant concentration higher than the first concentration is formed by heating the semiconductor substrate with the glass layer on the one main surface to diffuse the dopant in a surface part on the one main surface side of the semiconductor substrate. Surfaces of two or more portions apart from each other in the surface part on the one main surface side of the semiconductor substrate are roughened by locally heating the semiconductor substrate from above the glass layer, to form alignment reference parts. | 09-19-2013 |
20140014175 | SOLAR CELL ELEMENT AND SOLAR CELL MODULE - A solar cell element and a solar cell module are disclosed. The solar cell element includes a polycrystalline silicon substrate and an aluminum oxide layer on the p-type semiconductor layer. The polycrystalline silicon substrate includes a p-type semiconductor layer located at the uppermost position. The aluminum oxide layer is primarily amorphous. The solar cell module includes the above-mentioned solar cell element. | 01-16-2014 |
20140130860 | METHOD FOR FORMING ALUMINA FILM AND SOLAR CELL ELEMENT - A solar cell element and a method for forming an alumina film are disclosed. The method comprises: preparing a substrate; supplying sources of an aluminum source material that contains aluminum atoms and an oxygen source material that contains oxygen atoms comprising H | 05-15-2014 |