Patent application number | Description | Published |
20110032598 | WAVELENGTH CONVERSION LASER LIGHT SOURCE AND IMAGE DISPLAY DEVICE - A wavelength conversion laser light source includes a fundamental wave laser light source ( | 02-10-2011 |
20110147566 | WAVELENGTH CONVERSION LASER LIGHT SOURCE, AND PROJECTION DISPLAY DEVICE, LIQUID CRYSTAL DISPLAY DEVICE AND LASER LIGHT SOURCE PROVIDED WITH SAME - A wavelength conversion laser light source includes: a fundamental light source for outputting fundamental light; a wavelength conversion element with a nonlinear optical effect for converting the fundamental light into harmonic light of a different wavelength; a first optical receiver for receiving light of a specific polarization direction contained in the fundamental light output from the fundamental light source and converting an amount of light thereof into an electrical signal; a second optical receiver for receiving the harmonic light output from the wavelength conversion element and converting an amount of light thereof into an electrical signal; a temperature holding unit for holding a temperature of the wavelength conversion element constant; a fundamental light control unit for performing first control of controlling an amount of light of the fundamental light output from the fundamental light source based on the electrical signal from the second optical receiver, and second control of controlling an amount of light of the fundamental light based on the electrical signal from the first optical receiver; and a temperature control unit for performing third control of controlling a holding temperature of the temperature holding unit based on the electrical signal from the second optical receiver. | 06-23-2011 |
20110255149 | WAVELENGTH CONVERSION LASER LIGHT SOURCE AND IMAGE DISPLAY APPARATUS - A wavelength conversion laser light source | 10-20-2011 |
20120002263 | LASER LIGHT SOURCE, WAVELENGTH CONVERSION LASER LIGHT SOURCE AND IMAGE DISPLAY DEVICE - A laser light source having a semiconductor laser light source which emits a laser beam, a laser medium excited by the semiconductor laser light source to emit light, two reflectors configured to work as a resonator to confine the light emitted by the laser medium, and a holder which holds the laser medium, wherein stress is generated in the laser medium formed of a ceramic material situated in the resonator so as to control a polarization direction of the light emitted by the laser medium. | 01-05-2012 |
20120099184 | WAVELENGTH CONVERSION LASER LIGHT SOURCE AND IMAGE DISPLAY DEVICE - A wavelength conversion laser light source having: a laser medium which generates a fundamental wave light; a laser resonator for causing laser oscillation of the fundamental wave light; a wavelength convertor which is provided with a wavelength converting region to convert the fundamental wave light under the laser oscillation by means of the laser resonator into converted light of a different wavelength; and an excitation laser light source for exciting the laser medium, wherein the laser resonator has at least one reflecting surface which reflects the fundamental wave, and a first reflecting element which is provided on an end surface of the wavelength convertor to reflect the fundamental wave light ; the wavelength converting region is situated between the at least one reflecting surface and the first reflecting element; the wavelength convertor has a periodic first polarization reversal structure formed in the wavelength converting region, and a non-converting region formed between the first reflecting element and the wavelength converting region; and the non-converting region does not convert the fundamental wave light into the converted light. | 04-26-2012 |
20130335813 | WAVELENGTH CONVERSION LASER LIGHT SOURCE, AND IMAGE DISPLAY DEVICE - A wavelength conversion laser light source, includes: a solid laser medium; a wavelength conversion element; a concave mirror on which a first reflecting surface reflecting a fundamental light wave and a second harmonic light wave is formed; and a wavelength plate on which a second reflecting surface reflecting the fundamental light wave and transmitting the second harmonic light wave is formed, wherein a laser resonator is constituted by the first reflecting surface and the second reflecting surface; the solid laser medium is arranged on a first reflecting surface side of the laser resonator, the wavelength plate is arranged on a second reflecting surface side of the laser resonator, and the wavelength conversion element is arranged between the solid laser medium and the wavelength plate; and the wavelength plate outputs the second harmonic wave, to the exterior of the laser resonator, via the second reflecting surface. | 12-19-2013 |
20140183562 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor layer | 07-03-2014 |
20140231828 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first cell and a second cell. Each of the first cell and the second cell includes a first silicon carbide semiconductor layer including a first region and a second region provided in the first region, a second silicon carbide semiconductor layer provided on and in contact with the first silicon carbide semiconductor layer, a first ohmic electrode in ohmic contact with the second region, and an insulating film provided on the second silicon carbide semiconductor layer. The first cell includes a gate electrode, and the second cell includes no electrode configured to control the electric potential of the second silicon carbide semiconductor layer independently of the electric potential of the first ohmic electrode. | 08-21-2014 |
20140246682 | SEMICONDUCTOR ELEMENT - In a semiconductor element, a body region of a second conductivity type includes a first body region in contact with a surface of a first silicon carbide semiconductor layer, and a second body region in contact with a bottom surface of the body region of the second conductivity type. The impurity concentration of the first body region is twice or more the impurity concentration of the second body region. A second silicon carbide semiconductor layer of a first conductivity type, which is a channel layer, has an impurity concentration distribution in a direction perpendicular to a semiconductor substrate, and an impurity concentration on a side in contact with the gate insulating film is lower than an impurity concentration on a side in contact with the first body region. | 09-04-2014 |