Nishijo
Hiroaki Nishijo, Kawasaki JP
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20100218032 | REDUNDANT SYSTEM, CONTROL APPARATUS, AND CONTROL METHOD - A redundant system includes a redundant apparatus and a control unit that controls power supplied to the redundant apparatus. The redundant apparatus includes a state management unit that manages an operational state of the redundant apparatus, and a response unit that returns the operational state to the control unit. The control unit includes a first requesting unit that requests a redundant apparatus that operates as an operation system for the operational state information, a first determination unit that determines whether the response to the request is returned within a predetermined time, a second determination unit that determines whether the operational state is normal if the response is returned within the predetermined time, and a shutdown unit that shuts down the power supply to the redundant apparatus, if the second determination unit determines that the operational state is not normal. | 08-26-2010 |
20130080831 | STORAGE APPARATUS, SYSTEM, AND CONTROL METHOD - A storage apparatus includes a storage drive which writes and reads out a block of data with respect to a storage medium loaded on the storage apparatus, a processor which executes access control on a plurality of volumes assigned to the storage medium and a memory which stores a piece of management information that includes a piece of information indicating a usage frequency of each of the volumes. The processor executes a procedure including: determining a reallocation target volume from among a plurality of volumes assigned to the storage medium based on the management information, and moving the data of the reallocation target volume to a reallocation destination storage medium which is different from the storage medium. | 03-28-2013 |
Junichi Nishijo, Aichi JP
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20110058308 | Metal Encapsulated Dendritic Carbon Nanostructure, Carbon Nanostructure, Process for Producing Metal Encapsulated Dendritic Carbon Nanostructure, Process for Producing Carbon Nanostructure, and Capacitor - This invention provides a metal encapsulated dendritic carbon nanostructure comprising a dendritic carbon nanostructure comprising a branched carbon-containing rod-shaped or annular material and a metallic body capsulated in the carbon nanostructure. There is also provided a dendritic carbon nanostructure comprising a branched carbon-containing rod-shaped or annular material. | 03-10-2011 |
Toshihisa Nishijo, Yokohama-Shi JP
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20120233813 | DOOR CHECKER UNIT OF MOTOR VEHICLE - A door checker unit of a motor vehicle comprises a check link including a base end connected to a vehicle body, an elongate portion that extends from the base end and is formed with a waved detent portion and a head-like stopper that is integrally formed on a leading end of the elongate portion; and a check box connected to a vehicle door, the check box including upper and lower press shoes for putting therebetween the check link, each of the upper and lower press shoes having a projected guide wall, wherein the waved detent portion has upper and lower waved detent surfaces provided on the check link, the guide walls of the press shoes put therebetween the check link; and a width of the base end is substantially the same as that of the waved detent portion of the check link. | 09-20-2012 |
20120246871 | DOOR CHECK LINK APPARATUS FOR VEHICLE - A door check link apparatus includes a check link formed by molding a synthetic resin on a surface of a core plate, and including a full open stopper including a projecting portion located at a tip end portion of the core plate, and having a width larger than a width of a detent surface, a bending piece formed at a first end portion of the projecting portion, and having a stopper surface confronting the stopper receiving surface, and a protruding portion formed on the projecting portion at a position farther apart from the stopper receiving surface relative to the stopper surface, and protruding in a direction substantially parallel to the stopper receiving surface, the full open stopper being formed by molding the synthetic resin on the tip end portion of the core plate including the projecting portion, the bending piece, and the protruding portion. | 10-04-2012 |
Yoshinosuke Nishijo, Kanagawa JP
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20130187281 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF SAME - A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask. | 07-25-2013 |
Yoshinosuke Nishijo, Kanagawa-Ken JP
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20100164095 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF SAME - A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask. | 07-01-2010 |
20120001321 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF SAME - A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask. | 01-05-2012 |
Yoshinosuke Nishijo, Hyogo-Ken JP
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20120178223 | Method of Manufacturing High Breakdown Voltage Semiconductor Device - According to one embodiment, a method of manufacturing a semiconductor device includes a polishing step, a first amorphous silicon film formation step, a single crystallization step and a buffer layer formation step. In the first amorphous silicon film formation step, a first amorphous silicon film of the first conductivity type is formed on the polished back surface of the high-resistance layer, the first amorphous silicon film having a higher impurity concentration than the high-resistance layer. In the single crystallization step, the first amorphous silicon film is single-crystallized by irradiating the first amorphous silicon film with a first laser. In the buffer layer formation step, the formation and single-crystallization of the first amorphous silicon film are repeated more than once to form a buffer layer of the first conductivity type on the back surface of the high-resistance layer, the buffer layer having a higher impurity concentration than the high-resistance layer. | 07-12-2012 |
Yoshiteru Nishijo, Osaka JP
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20090118157 | Processes For Production Of Wine Lactone And Its Intermediates And Application Of The Lactone - The present invention provides a method for producing wine lactone, a method for producing intermediates that are usable in production of wine lactone, and techniques for the application of wine lactone. The method for producing the wine lactone (Compound (6)) of the present invention comprises the following steps (A) to (E): | 05-07-2009 |