Patent application number | Description | Published |
20110151678 | NOVEL GAP FILL INTEGRATION - Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps. | 06-23-2011 |
20120149213 | BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES - Provided are novel methods of filling gaps with a flowable dielectric material. According to various embodiments, the methods involve performing a surface treatment on the gap to enhance subsequent bottom up fill of the gap. In certain embodiments, the treatment involves exposing the surface to activated species, such as activated species of one or more of nitrogen, oxygen, and hydrogen. In certain embodiments, the treatment involves exposing the surface to a plasma generated from a mixture of nitrogen and oxygen. The treatment may enable uniform nucleation of the flowable dielectric film, reduce nucleation delay, increase deposition rate and enhance feature-to-feature fill height uniformity. | 06-14-2012 |
20130230987 | FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE - Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure. | 09-05-2013 |
20140302689 | METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION - Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods. | 10-09-2014 |
20150044882 | FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE - Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure. | 02-12-2015 |
20150118848 | ATOMIC LAYER REMOVAL PROCESS WITH HIGHER ETCH AMOUNT - Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process. | 04-30-2015 |
20150118862 | TREATMENT FOR FLOWABLE DIELECTRIC DEPOSITION ON SUBSTRATE SURFACES - Provided herein are methods and apparatus for improved flowable dielectric deposition on substrate surfaces. The methods involve improving nucleation and wetting on the substrate surface without forming a thick high wet etch rate interface layer. According to various embodiments, the methods may include single or multi-stage remote plasma treatments of a deposition surface. In some embodiments, a treatment may include exposure to both a reducing chemistry and a hydrogen-containing oxidizing chemistry. Apparatus for performing the methods are also provided. | 04-30-2015 |
20150118863 | METHODS AND APPARATUS FOR FORMING FLOWABLE DIELECTRIC FILMS HAVING LOW POROSITY - Provided herein are methods and apparatus for forming flowable dielectric films having low porosity. In some embodiments, the methods involve plasma post-treatments of flowable dielectric films. The treatments can involve exposing a flowable film to a plasma while the film is still in a flowable, reactive state but after deposition of new material has ceased. | 04-30-2015 |